# IGBT Module, Single Chopper, 300 A, 1.95 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3214751/)

**URL**: https://novapart.co/products/FD300R17KE4PHOSA1/igbt-module-single-chopper-300-a-195-v-150-c
**SKU**: FD300R17KE4PHOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €128.4800
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | C |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | - |
| Igbt Configuration | Single Chopper |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 300A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 300A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3214751/)

## FD300R17KE4P 

VCES = 1700V IC nom = 300A / ICRM = 600A 

- 3-Level-Applikationen 

- • Chopper-Anwendungen • Motorantriebe 

- 

- CEsat 

- 

- VCEsat 

- 

- 

- 

• Thermisches Interface Material bereits aufgetragen 

- 3-level-applications 

- 

- 

- 

- CEsat 

- 

- VCEsat 

- 

- 

- 

- 

**Digit** 

Datasheet www.infineon.com 

2019-04-02 

FD300R17KE4P 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|1700||V|
|---|---|---|---|---|---|---|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 80°C, Tvj max= 175°C|ICDC|300|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|600|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 300 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,95<br>2,35<br>2,45|2,30|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 12,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||3,05||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||2,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||24,5||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,81||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,24<br>0,28<br>0,30||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,05<br>0,055<br>0,055||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,70<br>0,74<br>0,78||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,13<br>0,15||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 300 A, VCE= 900 V, Lσ= 60 nH<br>di/dt = 4800 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||63,0<br>86,0<br>93,0||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 300 A, VCE= 900 V, Lσ= 60 nH<br>du/dt = 3600 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||55,0<br>90,0<br>100||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1400||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,114|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|14500<br>14000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||270<br>340<br>360||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,0<br>105<br>120||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||28,0<br>58,0<br>68,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,177|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Revers�/�Diode,�Reverse Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|14500<br>14000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,177|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



3 

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FD300R17KE4P 

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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,70||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|Gewicht<br>Weight||G||340||g|



Lagerung und Transport von Modulen mit TIM => siehe AN 2012-07 Storage and shipment of modules with TIM => see AN 2012-07 

V�2.0 2019-04-02 

Datasheet 

4 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,�Brems-Chopper�(typisch) output�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,�Brems-Chopper�(typisch) output�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
600 600<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>Tvj = 150°C VGE = 12 V<br>VGE = 10V<br>500 500 VGE = 9V<br>VGE = 8V<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,�Brems-Chopper�(typisch) transfer�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VGE) VCE�=�20�V 

**Schaltverluste�IGBT,�Brems-Chopper�(typisch) switching�losses�IGBT,�Brake-Chopper�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�2.4� Ω ,�RGoff�=�2.4� Ω ,�VCE�=�900�V 

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**----- Start of picture text -----**<br>
600 200<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 180 E off , T vj  = 125°C<br>Eoff, Tvj = 150°C<br>500<br>160<br>140<br>400<br>120<br>300 100<br>80<br>200<br>60<br>40<br>100<br>20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =300A,V CE =900V<br>300 1<br>Eon, Tvj = 125°C ee ZthJH : IGBT<br>Eon, Tvj = 150°C<br>270 E off , T vj  = 125°C<br>Eoff, Tvj = 150°C<br>240<br>7<br>210 y io aee [|]<br>0,1 =<br>a ST Tey<br>180<br>WA Pr<br>ne2a<br>150 JZ a<br>120 41/ Wid<br>4 / 0,01 ynil<br>90<br>fn eee eeeerie<br>60<br>i: 1 2 3 4<br>30 ri[K/W]: 0,008097 0,0451 0,04271 0,01814<br>τ i[s]: 0,0008055 0,03331 0,1352 1,053<br>BERR REREE a |<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Riickw.-Arbeitsber. IGBT, Brems-Chopper (RBSOA) Durchlasskennlinie der Diode, Brems-Chopper (typisch)<br>reverse bias safe operating area IGBT, Brake-Chopper forward characteristic of Diode, Brake-Chopper (typical)<br>(RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =24 Ω ,T vj =150°C<br>800 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>700 Tvj = 150°C<br>500<br>600<br>| 400<br>500 |<br>|<br>|<br>400 | 300<br>|<br>|<br>300 |<br>| 200<br>|<br>200 | |<br>|<br>| 100<br>100 |<br>A7<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f il F) Erec =f(R G)<br>RGon =24 Ω ,V CE =900V IF =300A,V CE =900V<br>90 100<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>80 = Erec, Tvj = 150°C | = [_] oO 7 90 (ET Erec, Tvj = 150°C C<br>a<br>a<br>7<br>70 Zz 80<br>a<br>7<br>/ 70<br>60<br>7<br>/ 60 ~“.<br>7<br>50<br>7<br>/ 50<br>40 / SL<br>40<br>30<br>30<br>20<br>fo 20 te>—<br>10 10<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJH =f (t) IF =f(V F)<br>1 600<br>ZthJH : Diode Tvj = 25°C<br>Tvj = 125°C<br>Tvj = 150°C<br>500<br>400<br>0,1 300<br>200<br>100<br>i: 1 2 3 4<br>ri[K/W]: 0,01345 0,06861 0,06934 0,02553<br>τ i[s]: 0,0006914 0,0267 0,1083 0,8363<br>| 7<br>0,01 7 0 oat<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VF [V]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

7 

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ZthJH 

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**----- Start of picture text -----**<br>
1<br>ZthJH : Diode<br>0,1<br>i: 1 2 3 4<br>ri[K/W]: 0,01345 0,06861 0,06934 0,02553<br>τ i[s]: 0,0006914 0,0267 0,1083 0,8363<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FD300R17KE4PHOSA1/igbt-module-single-chopper-300-a-195-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fd300r17ke4phosa1/igbt-mod-n-ch-1-7kv-300a-150deg/dp/3214751)
---

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