# IGBT Module, Single Chopper, 150 A, 1.75 V, 790 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3155173/)

**URL**: https://novapart.co/products/FD150R12RT4HOSA1/igbt-module-single-chopper-150-a-175-v-790-w-c
**SKU**: FD150R12RT4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €85.6000
**Stock**: 10+

## Description

Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Tra

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | 790W |
| Igbt Configuration | Single Chopper |
| Transistor Mounting | Panel |
| Dc Collector Current | 150A |
| Power Dissipation Pd | 790W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 150A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155173/)

IGBT-Module IGBT-modules 

## FD150R12RT4 

VCES = 1200V IC nom = 150A / ICRM = 300A 

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- Motorantriebe 

- USV-Systeme 

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- CEsat 

- • T yop = 150°C • VCEsat mit 

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- Standardgehäuse 

- 

- 

- 

- 

- 

- CEsat 

- • T 

- VCEsat 

- 

- 

1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FD150R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FD150R12RT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>790<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 5,70 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,90<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,50<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>8,50<br>13,5<br>15,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,50<br>13,5<br>15,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,19<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,092<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FD150R12RT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode-Chopper�/�Diode-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|4100<br>4000|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||120<br>140<br>150||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||14,0<br>24,0<br>28,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||5,00<br>8,50<br>10,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,31|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-05 revision:�2.3 

prepared�by:�MK approved�by:�WR 

3 

> IGBT-ModuleIGBT-modules FD150R12RT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Revers�/�Diode,�Reverse Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|600<br>550|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||55,0<br>60,0<br>65,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,00<br>9,00<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,00<br>3,20<br>3,60||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,84|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,405||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-05 revision:�2.3 

prepared�by:�MK approved�by:�WR 

4 

> IGBT-ModuleIGBT-modules FD150R12RT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||17,0<br>20,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||17,0<br>9,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,05||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,65||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00|-|5,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|Gewicht<br>Weight||G||160||g|



Power Cycling Zuverlässigkeit bei Tvjop=125°C: - entspricht gültiger Spezifikation für Standard Module bei Tvjmax=125°C; 300.000 Zyklen @ dTj=50K Power Cycling Capability at Tvjop=125°C: 

- according to valid specification for standard modules at Tvjmax=125°C; 300.000 cycles @ dTj=50K 

date�of�publication:�2013-11-05 revision:�2.3 

prepared�by:�MK approved�by:�WR 

5 

## IGBT-Module IGBT-modules Technische Information FD150R12RT4 / Technical Information 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>240 240 VGE = 11V<br>e— |} [fie] |} i7eeane<br>VGE = 9V<br>e e<br>210 210<br>ee [Ls /ee<br>180 180<br>re /; ;<br>150 150<br>120 120<br>ee ee ee ee<br>90 [fo 90<br>ee ‘ ee ee Ars / |<br>/<br>60 60<br>30 30<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 45 Eoff, Tvj = 125°C<br>y Tvj = 150°C e Eon, Tvj = 150°C Litt ty<br>Eoff, Tvj = 150°C<br>240 40<br>oes ee ee Sl sees<br>Pi t<br>210 35<br>| Eve E E<br>ee<br>180 30<br>pt [|] ; A<br>Re 72a<br>150 25<br>120 20<br>fliliAt | SERREEP 228<br>ee Ae eee cee<br>90 15<br>ee ee me<br>60 10<br>i eee eecee<br>30 5<br>0 0<br>wi | | | tT | Pe<br>5 6 7 8 9 10 11 12 13 0 30 60 90 120 150 180 210 240 270 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FD150R12RT4 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =150A,V CE =600V<br>40 1<br>Eon, Tvj = 125°C | ZthJC : IGBT ee<br>36 mH Eoff, Tvj = 125°C J ill i i 4 HH—roU== r=_—— E E0...HH}S00; tHee oessana<br>EEonoff, T, Tvjvj = 150°C = 150°C PTa [TT] eeT eeeT<br>32<br>— ——— |<br>a PTT TTI ETE ETT]<br>28 aaT a<br>0,1<br>24 Pf ft | foe TF fd | SS aero ee0 eet!<br>4ca a<br>20 Pf fo Leb TT ft fd | 2 | |<br>16 | wa |<br>| by | | ft | tees ATT TT<br>0,01<br>12 aro LATECETIE ETE Tl<br>8 Pt fT } fo) tt pt dd aPT2eee eee<br>i:    1    2    3    4<br>4 PLE EE PT t  TT T r τ ii[K/W]:   [s]:    0,0114   0,01    t 0,0627   0,02    T 0,0608   0,05    0,0551   0,1<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode-Chopper (typisch) Schaltverluste Diode-Chopper (typisch)<br>forward characteristic of Diode-Chopper (typical) switching losses Diode-Chopper (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon =1.1 Ω ,V CE =600V<br>300 14<br>Tvj = 25°C Erec, Tvj = 125°C<br>270 Tvj = 125°C Erec, Tvj = 150°C<br>F Tvj = 150°C y 12 EJ<br>hast | T T<br>240<br>10<br>210<br>180<br>PoceEeeeHA) CEE<br>8<br>150 PCA To<br>6<br>120<br>90 SOGGeeny seen pos<br>4<br>60<br>SOGG00 40000; 2 anne<br>SEREP Ane<br>30<br>BE BE ZAR<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0 30 60 90 120 150 180 210 240 270 300<br>VF [V] IF [A]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-Module IGBT-modules 

## FD150R12RT4 

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**----- Start of picture text -----**<br>
Erec =f(R G) ZthJC =f(t<br>IF i604. V CE = 600 V 0<br>14 ——_ Erec, Tvj = 125°C 1 S ZthJC : Diode oon<br>H— ee<br>Erec, Tvj = 150°C<br>12 Ey— _____. |ca g E E Ht HH<br>10<br>aa a ann Milian<br>0,1<br>8 — Pt<br>a ETE EH EH<br>ee |<br>6 in ae ot<br>0,01<br>4<br>a eee<br>aYT TT TE TTT rTee TTT eeTT TTT|<br>2 i:    1    2    3    4<br>ri[K/W]:   0,0186   0,1023   0,0992   0,0899<br>τ i[s]:    0,01    0,02    0,05    0,1<br>PCAC) LLLEt Ebro om c<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode, Revers (typisch) Transienter Warmewiderstand Diode, Revers<br>forward characteristic of Diode, Reverse (typical) transient thermal impedance Diode, Reverse<br>IF =f(V F) ZthJC = f (t)<br>100 1<br>Tvj = 25°C ZthJC : Diode<br>90 Tvj = 125°C<br>F Tvj = 150°C y —<br>80 = TT P y | Ty | aa<br>70 P}  Td PT CEE<br>| tty lt | LAE 4 ET RaLTILTI RR EAHT R<br>60<br>EERE EREE eee<br>50 0,1 OE ATE EAE ALLL<br>J a<br>See if Ane Yr [| YT oTee TT ee TTT|TT TTT]<br>40 See rT 7E TT<br>30<br>i eee a | |<br>20 Pt | |) | vr] dT td ReVI EE EET| el<br>i:    1    2    3    4<br>10 SRGn0 7400000 e |e | r τ ii[K/W]:   [s]:    0,0504   0,01    0,2772   0,02    0,2688   0,05    0,2436   0,1<br>Ba pe Zane Toon<br>0 0,01<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0,001 0,01 0,1 1 10<br>VF [V] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]IF  [K/W]thJC<br>Z<br>**----- End of picture text -----**<br>


8 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FD150R12RT4 

**==> picture [217 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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prepared�by:�MK date�of�publication:�2013-11-05<br>approved�by:�WR revision:�2.3<br>**----- End of picture text -----**<br>


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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FD150R12RT4 

## **Nutzungsbedingungen** 

## application. 

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## Links

- [View this product on Novapart](https://novapart.co/products/FD150R12RT4HOSA1/igbt-module-single-chopper-150-a-175-v-790-w-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fd150r12rt4hosa1/igbt-module-n-ch-1-2kv-150a-790w/dp/3155173)
---

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