# Bipolar (BJT) Single Transistor, PNP, 25 V, 3 A, 2 W, SOT-89, Surface Mount ![Product image](https://novapart.co/image/farnell:1902471/) **URL**: https://novapart.co/products/FCX1149ATA/bipolar-bjt-single-transistor-pnp-25-v-3-a-2-w-sot **SKU**: FCX1149ATA **Manufacturer**: DIODES INC. **Price**: €0.2030 **Stock**: 10+ ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:135MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:260hFE; Transistor ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 4Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 135MHz | | Transistor Case Style | SOT-89 | | Dc Current Gain Hfe Min | 260hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 3A | | Collector Emitter Voltage Max | 25V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1902471/) # **SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR** ## **FCX1149A** **ISSSUE 1 - SEPTEMBER 1999** FEATURES - **2W POWER DISSIPATION** - 20A Peak Pulse Current - Excellent HFE Characteristics up to 10 Amps - Extremely Low Saturation Voltage E.g. 45mv Typ. - Extremely Low Equivalent On-resistance; - **R 67m** �� **at 3A CE(sat)** Partmarking Detail - 149 **==> picture [65 x 81] intentionally omitted <==** **----- Start of picture text -----**
C
E
C
B
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## **ABSOLUTE MAXIMUM RATINGS.** |**ABSOLUTE MAXIMUM RATINGS.**|||| |---|---|---|---| |PARAMETER|SYMBOL|VALUE|UNIT| |Collector-Base Voltage|VCBO|-30|V| |Collector-Emitter Voltage|VCEO|-25|V| |Emitter-Base Voltage|VEBO|-5|V| |Peak Pulse Current **|ICM|-10|A| |Continuous Collector Current|IC|-3|A| |Base Current|IB|-500|mA| |Power Dissipation at Tamb=25°C|Ptot|1 †
2 ‡|W
W| |Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C| - recommended Ptot calculated using FR4 measuring 15x15x0.6mm - Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. - **Measured under pulsed conditions. Pulse width=300 � s. Duty cycle � 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. ## **FCX1149A** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|VALUE|VALUE|VALUE|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |||MIN.|TYP.|MAX.||| |Collector-Base
Breakdown Voltage|V(BR)CBO|-30|||V|IC=-100�A| |Collector-Emitter
Breakdown Voltage|V(BR)CES|-25|||V|IC=-100�A| |Collector-Emitter
Breakdown Voltage|V(BR)CEO|-25|||V|IC=-10mA*| |Collector-Emitter
Breakdown Voltage|V(BR)CEV|-25|||V|IC=-100�A, VEB=+1V| |Emitter-Base
Breakdown Voltage|V(BR)EBO|-5|||V|IE=-100�A| |Collector Cut-Off Current|ICBO||-0.3|-100|nA|VCB=-24V| |Emitter Cut-Off Current|IEBO||-0.3|-100|nA|VEB=-4V| |Collector Emitter Cut-Off
Current|ICES||-0.3|-100|nA|VCES=-20V| |Collector-Emitter
Saturation Voltage|VCE(sat)||-45
-100
-140
-200
-230|-80
-170
-240
-300
-350|mV
mV
mV
mV
mV|IC=-0.1A, IB=-1mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-3A, IB=-100mA*
IC=-4A, IB=-140mA*| |Base-Emitter
Saturation Voltage|VBE(sat)||-930|-1050|mV|IC=-3A, IB=-100mA*| |Base-Emitter Turn-On
Voltage|VBE(on)||-840|-1000|mV|IC=-3A, VCE=-2V*| |Static Forward Current
Transfer Ratio|hFE|270
250
150
115|450
400
260
190
50|800||IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-3.0A, VCE=-2V*
IC=-5.0A, VCE=-2V*
IC=-10.0A, VCE=-2V*| |Transition Frequency|fT||135||MHz|IC=-50mA, VCE=-10V
f=50MHz| |Output Capacitance|Ccb||50||pF|VCB=-10V, f=1MHz| |Switching Times|ton||150||ns|IC=-4A, IB=-40mA,
VCC=-10V| ||toff||270||ns|IC=-4A, IB=�40mA,
VCC=-10V| *Measured under pulsed conditions. Pulse width=300 � s. Duty cycle � 2% ## **FCX1149A** ## **TYPICAL CHARACTERISTICS** **==> picture [158 x 409] intentionally omitted <==** **----- Start of picture text -----**
1.0
+25°C
0.8
IC/IB=10
0.6 IC/IB=50
IC/IB=100
IC/IB=200
0.4
0.2
0
1m 10m 100m 1 10 100
IC - Collector Current (A)
VCE(sat) v IC
750
VCE=2V
+100°C
500 +25°C-55°C
250
0
1m 10m 100m 1 10 100
IC - Collector Current (A)
hFE v IC
1.2
VCE=2V
0.8
0.4 -55°C
+25°C
+100°C
0
1m 10m 100m 1 10 100
IC - Collector Current (A)
VBE(on) v IC
- (V)
CE(sat)
V
- Typical Gain
FE
h
- (V)
BE(on)
V
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1.0
IC/IB=100
0.8
0.6 -55°C
+25°C
+100°C
0.4
0.2
0
1m 10m 100m 1 10 100
IC - Collector Current (A)
VCE(sat) v IC
1.6
IC/IB=100
1.2
0.8
-55°C
0.4 +25°C
+100°C
0
1m 10m 100m 1 10 100
IC - Collector Current (A)
VBE(sat) v IC
10
1
DC
1s
100ms
10ms
100m 1ms
100us
10m
100m 1 10 100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
- (V)
CE(sat)
V
- (V)
BE(sat)
V
- Collector Current (A)
IC
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