# Bipolar (BJT) Single Transistor, NPN, 75 V, 3 A, 1.6 W, SOT-89, Surface Mount ![Product image](https://novapart.co/image/farnell:9526013/) **URL**: https://novapart.co/products/FCX1053A/bipolar-bjt-single-transistor-npn-75-v-3-a-16-w **SKU**: FCX1053A **Manufacturer**: DIODES INC. **Price**: €0.2840 **Stock**: 200+ **Lead Time**: 302 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:75V; Transition Frequency ft:140MHz; Power Dissipation Pd:1.6W; DC Collector Current:3A; DC Current Gain hFE:450hFE; Transistor Case St ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 1.6W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 140MHz | | Transistor Case Style | SOT-89 | | Dc Current Gain Hfe Min | 450hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 3A | | Collector Emitter Voltage Max | 75V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9526013/) ## **SOT89 NPN SILICON POWER** # **(SWITCHING) TRANSISTOR** ## **FCX1053A** ISSUE 1 - MARCH 1999 FEATURES ## *** 2W POWER DISSIPATION** - 10A Peak Pulse Current - Excellent HFE Characteristics up to 10 Amps - Extremely Low Saturation Voltage E.g. 21mv Typ. - Extremely Low Equivalent On-resistance; - **R 78m** �� **at 4.5A CE(sat)** Partmarking Detail - 053 **==> picture [65 x 81] intentionally omitted <==** **----- Start of picture text -----**
C
E
C
B
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## **ABSOLUTE MAXIMUM RATINGS.** |**ABSOLUTE MAXIMUM RATINGS.**|||| |---|---|---|---| |PARAMETER|SYMBOL|VALUE|UNIT| |Collector-Base Voltage|VCBO|150|V| |Collector-Emitter Voltage|VCEO|75|V| |Emitter-Base Voltage|VEBO|5|V| |Peak Pulse Current **|ICM|10|A| |Continuous Collector Current|IC|3|A| |Power Dissipation at Tamb=25°C|Ptot|1 †
2 ‡|W
W| |Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C| - recommended Ptot calculated using FR4 measuring 15x15x0.6mm - Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 � s. Duty cycle � 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. ## **FCX1053A** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.
|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Collector-Base
Breakdown Voltage|V(BR)CBO|150|250||V|IC=100�A| |Collector-Emitter
Breakdown Voltage|VCES|150|250||V|IC=100�A| |Collector-Emitter
Breakdown Voltage|VCEO|75|100||V|IC=10mA| |Collector-Emitter
Breakdown Voltage|VCEV|150|250||V|IC=100�A, VEB=1V| |Emitter-Base
Breakdown Voltage|V(BR)EBO|5|8.8||V|IE=100�A| |Collector Cut-Off Current|ICBO||0.9|10|nA|VCB=120V| |Emitter Cut-Off Current|IEBO||0.3|10|nA|VEB=4V| |Collector Emitter Cut-Off
Current|ICES||1.5|10|nA|VCES=120V| |Collector-Emitter
Saturation Voltage|VCE(sat)||21
55
150
160
350|30
75
200
210
440|mV
mV
mV
mV
mV|IC=0.2A, IB=20mA*
IC=0.5A, IB=20mA*
IC=1A, IB=10mA*
IC=2A, IB=100mA*
IC=4.5A, IB=200mA*| |Base-Emitter
Saturation Voltage|VBE(sat)||900|1000|mV|IC=3A, IB=100mA*| |Base-Emitter Turn-On
Voltage|VBE(on)||825|950|mV|IC=3A, VCE=2V*| |Static Forward Current
Transfer Ratio|hFE|270
300
300
40|440
450
450
60
20|1200||IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=4.5A, VCE=2V*
IC=10A, VCE=2V*| |Switching Times|ton||162||ns|IC=2A, IB1=IB2=�20mA,
VCC=50V| ||toff||900||ns|IC=2A, IB1=IB2=�20mA,
VCC=50V| |Transition Frequency|fT||140||MHz|IC=50mA, VCE=10V
f=100MHz| |Output Capacitance|Cobo||21|30|pF|VCB=10V, f=1MHz| *Measured under pulsed conditions. Pulse width=300 � s. Duty cycle � 2% ## **FCX1053A** ## **TYPICAL CHARACTERISTICS** **==> picture [358 x 437] intentionally omitted <==** **----- Start of picture text -----**
0.8 0.8
+25°C IC/IB=30
0.6 0.6
-55°C
IC/IB=10 +25°C
0.4 IC/IB=30 0.4 +100°C
IC/IB=100 +150°C
0.2 0.2
0 0
1m 10m 100m 1 10 100 1m 10m 100m 1 10 100
IC - Collector Current (A) IC - Collector Current (A)
VCE(sat) v IC VCE(sat) v IC
600 VCE=2V 1.6 IC/IB=30
+100°C 1.2
400 +25°C-55°C
0.8
200 +25°C-55°C
0.4 +100°C
+150°C
0 0
1m 10m 100m 1 10 100 1m 10m 100m 1 10 100
IC - Collector Current (A) IC - Collector Current (A)
hFE v IC VBE(sat) v IC
10
VCE=2V
1.2
1
0.8
0.4 +100°C+25°C-55°C 100m 100msDC1s
+150°C 10ms
1ms
100us
0 10m
1m 10m 100m 1 10 100 100m 1 10 100
IC - Collector Current (A) VCE - Collector Emitter Voltage (V)
VBE(on) v IC Safe Operating Area
- (V) - (V)
CE(sat) CE(sat)
V V
- (V)
BE(sat)
- Typical Gain V
FE
h
- (V)
BE(on)
V
- Collector Current (A)
IC
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