# IGBT Module, Four Pack, 100 A, 1.45 V, 275 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726112/)

**URL**: https://novapart.co/products/F475R06W1E3BOMA1/igbt-module-four-pack-100-a-145-v-275-w-150-c
**SKU**: F475R06W1E3BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €29.2700
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:275W; Collector Emi; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| Product Range | EasyPACK 1B |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 275W |
| Igbt Configuration | Four Pack |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 275W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726112/)

IGBT-Module IGBT-modules 

## F4-75R06W1E3 

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J<br>VCES = 600V<br>IC nom = 75A / ICRM = 150A<br>**----- End of picture text -----**<br>


- Hilfsumrichter 

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- USV-Systeme 

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- CEsat 

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   - CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

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- Lötverbindungstechnik 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

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- Rugged mounting due to integrated mounting clamps 

1 

> IGBT-ModuleIGBT-modules F4-75R06W1E3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F4-75R06W1E3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:3.0<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>75<br>100<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>275<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,60<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,145<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>tr<br>0,017<br>0,019<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>td off<br>0,20<br>0,22<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>tf<br>0,07<br>0,09<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 3600 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Eon<br>0,40<br>0,45<br>0,55<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Eoff<br>1,75<br>2,20<br>2,30<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>530<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,50<br>0,55<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,60<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules F4-75R06W1E3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|500<br>450<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||95,0<br>105<br>110||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,70<br>6,40<br>7,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,75||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,75|0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,60||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�3.0 

3 

## Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules F4-75R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||8,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30 A rms per connector pin. 

prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�3.0 

4 

IGBT-Module IGBT-modules 

## F4-75R06W1E3 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 a . 150 a<br>Tvj = 25°C VGE = 19V<br>135 F Tvj = 125°C L ay 135 | VGE = 17V aly<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>120 ere | | | jy 120 | VGE = 11V peaar a|<br>VGE = 9V<br>105 105<br>S i e e s<br>Vx<br>90 90<br>PitttT faeTee E d ae| |<br>- /<br>75 75<br>v; “i /<br>60 BRRRRREeMelt TEP 60 ET Ayi,<br>45 Pete 45<br>it yer ipeer<br>POPPA) ee<br>30 30<br>BRR ARR Ane<br>15 15<br>7 f<br>poe ) TL<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =51 Ω ,R Goff =5.1 Ω ,V CE =300V<br>150 5,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Tvj = 125°C 4,5 Eoff, Tvj = 125°C<br>F Tvj = 150°C LO Po Eon, Tvj = 150°C e<br>Eoff, Tvj = 150°C<br>120 4,0<br>et E f eo<br>e e[Lf Z va<br>105 3,5<br>eet t ae ee eva<br>90 3,0<br>ee<br>eee eee Ae<br>75 2,5<br>ee<br>60 2,0<br>ae eee ae<br>ji) a<br>45 1,5<br>ee<br>30 1,0<br>oe ee vA = —I<br>Po ay “tebeod<br>15 0,5<br>pe 4 Lee<br>0 0,0<br>5 6 7 8 9 10 11 12 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## F4-75R06W1E3 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =75A,V CE =300V<br>10,0 10 Y__{_{[{fii[{{{jfj_{[[ fT Pia ey<br>Eon, Tvj = 125°C ZthJH : IGBT<br>9,0 Eoff, Tvj = 125°C Rs |<br>Eon, Tvj = 150°C ee |<br>Eoff, Tvj = 150°C<br>8,0<br>COT [C] a [c] |<br>7,0<br>6,0 BRR7, WAa 1 ESeeCn eei eeeen e ee<br>5,0 A PTTCT<br>Pt A<br>4,0 | ft flee | fd ST<br>0,1<br>ee a ee ea<br>3,0 /LO |= Pt tt<br>2,0 P Liewb aay]= | | E|AE<br>i:    1    2    3    4<br>PTAA | | yl Ly CAM a / | TTee ri[K/W]:    a 0,051    0,117   0,426   0,506<br>1,0 Pf TE} At τ i[s]:    0,0005    oo 0,005   0,05    0,2    l<br>0,0 0,01<br>0 5 10 15 20 25 30 35 40 45 50 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =+15V,R Goff =51 Ω ,T vj =150°C<br>175 Ld 150 4<br>IC, Modul Tvj = 25°C<br>IC, Chip 135 Tvj = 125°C U/<br>150 ae Tvj = 150°C eee<br>ee<br>120<br>125<br>105<br>90<br>100<br>75<br>75<br>60<br>pf} ity) pep py<br>ee 45 ee<br>50<br>30<br>25<br>15<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,5 1,0 1,5 2,0<br>VCE  [V] VF [V]<br>  [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## F4-75R06W1E3 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =5.1 Ω ,V CE =300V IF =75A,V CE =300V<br>3,5 2,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>3,0<br>2,0<br>2,5<br>2,0 | 1,5<br>| \ .<br>a a<br>1,5<br>1,0<br>1,0<br>Per BREE<br>0,5<br>TT | [i LTRS ete<br>0,5<br>0,0 0,0<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH = f (t) R=f(T)<br>10 100000<br>i ZthJH : Diode eo 1 Rtyp a<br>Ra er | jy<br>a ee ee | s e<br>PTE ETE TET a ee ee ee<br>PUI TERI TTT TTT TTT PF | ET<br>1 10000<br>eeMCI Mm2 m = KLNT<br>ee a<br>YT TT TT Ar ES NN se ee<br>a nD) a | | Ne ee ee<br>EN pot NE<br>PU PT CTT TTT TT Pot KR<br>UATE TIMELINE LE NE<br>0,1 1000<br>Seeeeee{ sce eS Eat aa<br>YT T7T TUT TTT TT NS<br>YA [TT] TT TT TT seee<br>PAL eae i:    1    2    eee 3    4    pot NT<br>ri[K/W]:   0,1    0,227   0,596   0,526<br>τ i[s]:    0,0005   0,005   0,05    0,2<br>0,01 100<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules F4-75R06W1E3 

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Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>


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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�3.0 

8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


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F4-75R06W1E3<br>**----- End of picture text -----**<br>


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Nutzungsbedingungen<br>**----- End of picture text -----**<br>


application. 

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## Links

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- [Supplier page](https://es.farnell.com/infineon/f475r06w1e3boma1/igbt-module-n-ch-600v-100a/dp/2726112)
---

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