# IGBT Module, Four Pack, 180 A, 3.2 V, 960 W, 125 °C, Module

![Product image](https://novapart.co/image/farnell:2726110/)

**URL**: https://novapart.co/products/F4150R12KS4BOSA1/igbt-module-four-pack-180-a-32-v-960-w-125-c
**SKU**: F4150R12KS4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €93.1200
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:180A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:960W; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 2 Fast |
| Igbt Termination | Press Fit |
| Power Dissipation | 960W |
| Igbt Configuration | Four Pack |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 180A |
| Power Dissipation Pd | 960W |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 180A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 3.2V |
| Collector Emitter Saturation Voltage Vce(On) | 3.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726110/)

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules F4-150R12KS4 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>F4-150R12KS4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 60°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>150<br>180<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>960<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>3,20<br>3,85<br>3,75<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 6,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,5<br>5,5<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,60<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>10,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,63<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 5,6Ω<br>td on<br>0,12<br>0,13<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 5,6Ω<br>tr<br>0,05<br>0,06<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 5,6Ω<br>td off<br>0,31<br>0,36<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 5,6Ω<br>tf<br>0,02<br>0,03<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGon= 5,6Ω<br>Eon<br>18,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGoff= 5,6Ω<br>Eoff<br>7,50<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>900<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,13<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||



|preparedby:MK|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.1|



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules F4-150R12KS4 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|150|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|4300|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||2,30<br>2,00|2,85|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 2800 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||51,0<br>75,0||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 150 A, - diF/dt = 2800 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||7,00<br>20,0||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 2800 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||2,40<br>6,00||mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,32|K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 

2 

IGBT-模块 IGBT-modules 

## F4-150R12KS4 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al203|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 225<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||21|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>2,60<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300|g|



All Power 

3 

IGBT-模块 IGBT-modules 

## F4-150R12KS4 

## **初步数据** 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>300 300<br>Tvj = 25°C VGE = 8V<br>270 (ee= Tvj = 125°C /, ee 270 ee VVGEGE = 9V = 10V ee re/<br>‘ VGE = 12V VA<br>240 240 VGE = 15V<br>VGE = 20V<br>TI TTY = Core<br>210 PPA! 210 WAVA<br>SERRE se/ e ee/\/<br>180 180<br>Pte Ae Er<br>150 150<br>120 PCE / FET)\ 120 LEE eee. / we es<br>90 PLE LV/ 90 EES/ E<br>/ ee<br>60 60<br>tia SaaD) 2a. 4 “ - unne<br>30 30<br>SREP 4ERREE eee)os rane e<br>EPP E<br>0 0<br>ARR ee eeee e<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFRIAK IGBT, Hes ( HB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =56 Ω ,R Goff =56 Ω ,V CE =600V<br>300 Ld 55 SS<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 50 Eoff, Tvj = 125°C<br>EeTilly) / feye TS |<br>TT T 45<br>240<br>tT Tye) ao e<br>40<br>210<br>PTT E e<br>35<br>180<br>30<br>150<br>25<br>i<br>120<br>20<br>90<br>15<br>et} fT | CCEA<br>60<br>fe ed ee 10 ee<br>30 iseA 5 eae<br>0 0<br>5 6 7 8 9 10 11 12 0 30 60 90 120 150 180 210 240 270 300<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## F4-150R12KS4 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =150A,V CE =600V<br>80 — ee 1 OOo<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C ooo or TT TT TTT]<br>70 Ee)a Ji HH— aEE HH} tH<br>v a a |<br>Va ee<br>60<br>0,1 ee ce<br>50 vA7 PY TTA] FFE A<br>i<br>40 PT Tt | LayLZ yy | P EEEHtHEte Ei E<br>ERE 4Za APTE ETE TTT PTT<br>30<br>vA<br>4 0,01 CAC HINE |EITME EET TL<br>20 Z Pt<br>a |||<br>10 PP ff | pry o i i:   ri[K/W]:   1   0,0025    Eti 2   0,0075    oeEHH 3   0,06544    _ 4   0,05456<br>τ i[s]:    0,0000119   0,00236   0,026    0,065<br>PEE} ot pca<br>0 0,001<br>0 5 10 15 20 25 30 35 40 45 50 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RLS IMER IGBT, Es ( RBSOA ) TEESE ARE aes ( gaAY)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =5.6 Ω ,T vj =125°C<br>350 300<br>IC, Modul Tvj = 25°C<br>IC, Chip 270 Tvj = 125°C<br>300<br>— PT E]<br>240<br>ERR | ty<br>250<br>210<br>180<br>200<br>Pftty) 150 EberTLC<br>150<br>BRERRE TE<br>120<br>PP] 90 ee<br>100<br>60<br>50 PfPye eT EAE‘a<br>30<br>PEt RAPde<br>0 0 Pane [aA] | |<br>0 200 400 600 800 1000 1200 1400 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## F4-150R12KS4 

## **初步数据** 

**==> picture [487 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon ae Ω ,V CE =600V IF = i608. V CE = 600 V<br>7,0 7,0<br>6,5 Erec, Tvj = 125°C Erec, Tvj = 125°C<br>6,0 6,0<br>TT y ee | | |<br>5,5<br>Soe eee] OLIN<br>5,0 Pt 5,0 EE<br>4,5 P| iA} | tt aN<br>7yt} | | | tt PEE LN] I<br>4,0 4,0<br>Py  E EEE SN<br>3,5 FATES i | | | Lelytt Ply) |] pean<br>3,0 3,0<br>2,5<br>2,0 F/Tet || || || ct| hEEE 2,0 Pett LL yy<br>1,5<br>1,0 PetPt tT| || |TEct rtrE 1,0 Pit PL | yy<br>0,5<br>0,0 PetP| || |TE| tt| | 0,0 PEEL | EEE yA<br>0 30 60 90 120 150 180 210 240 270 300 0 5 10 15 20 25 30 35 40 45 50<br>IF [A] RG [ Ω ]<br>EAS RB ees RREARARBE BEStE<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 a 100000 eeet<br>ZthJC : Diode Rtyp<br>ee ee a<br>oe DO<br>a ee | es es<br>SET I ry.<br>10000<br>On a a Ne ee<br>/ Se ee ec ee<br>0,1 J SSS SSS<br>aVI a ee el aNN\ eee<br>ea lll 1000 ————_————<br>a | | ee<br>7 ooo) i:    1    2    3    4    | SSSR<br>ri[K/W]:   0,00605    0,01817   0,16135   0,13443<br>τ i[s]:    0,0000119   0,00236   0,026    0,065<br>0,01 CoCo 100 P| Et | ft |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

技术信息�/�Technical�Information IGBT-模块IGBT-modules F4-150R12KS4 

**==> picture [86 x 38] intentionally omitted <==**

**==> picture [477 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>J<br>**----- End of picture text -----**<br>


## **封装尺寸�/�package�outlines** 

**==> picture [494 x 411] intentionally omitted <==**

prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 

7 

IGBT-模块 IGBT-modules 

## F4-150R12KS4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



## Links

- [View this product on Novapart](https://novapart.co/products/F4150R12KS4BOSA1/igbt-module-four-pack-180-a-32-v-960-w-125-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/f4150r12ks4bosa1/igbt-module-n-ch-1-2kv-180a/dp/2726110)
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