# IGBT Module, Three level Inverter, 45 A, 1.45 V, 275 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3294633/)

**URL**: https://novapart.co/products/F3L75R12W1H3B27BOMA1/igbt-module-three-level-inverter-45-a-145-v-275-w
**SKU**: F3L75R12W1H3B27BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €15.4600
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 21Pins |
| Product Range | EasyPACK 1B |
| Igbt Technology | IGBT 3 High Speed |
| Igbt Termination | Press Fit |
| Power Dissipation | 275W |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Polarity | Quad N Channel |
| Dc Collector Current | 45A |
| Power Dissipation Pd | 275W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 45A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3294633/)

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

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VCES = 1200V IC nom = 75A / ICRM = 150A 

- 3-Level-Applikationen 

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   - 3-level-applications 

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- CEsat 

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   - 

   - 

   - CEsat 

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- Al2O3 Substrat mit kleinem thermischen Widerstand 

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- Robuste Montage durch integrierte Befestigungsklammern 

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- Al2O3 

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- Rugged mounting due to integrated mounting clamps 

**Digit** 

1 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

**==> picture [86 x 38] intentionally omitted <==**

|TechnischeInformation/TechnicalInformation<br>F3L75R12W1H3_B27<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.2<br>**IGBT,T1-T4/IGBT,T1-T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>ImplementierterKollektor-Strom<br>Implementedcollectorcurrent<br>ICN<br>75<br>A<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>275<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,55<br>1,60<br>1,70<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 2,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,00<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,57<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,40<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,235<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 6,8Ω<br>td on<br>0,03<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 6,8Ω<br>tr<br>0,01<br>0,012<br>0,012<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 6,8Ω<br>td off<br>0,25<br>0,32<br>0,34<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 6,8Ω<br>tf<br>0,025<br>0,04<br>0,045<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 6,8Ω<br>Eon<br>0,40<br>0,60<br>0,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, du/dt = 2400 V/µs (Tvj= 150°C)<br>RGoff= 6,8Ω<br>Eoff<br>1,05<br>1,60<br>1,75<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>270<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,500 0,550 K/W||



|preparedby:CM|dateofpublication:2016-04-04|
|---|---|
|approvedby:AKDA|revision:V3.2|



2 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

**==> picture [86 x 38] intentionally omitted <==**

|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,450||K/W|
|---|---|---|---|---|---|---|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�D1�/�D4�/�Diode,�D1�/�D4 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>75,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,90<br>1,90|2,40|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||72,0<br>80,0<br>82,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,35<br>2,85<br>3,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,80<br>1,30<br>1,35||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,950|1,05|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,850||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CM approved�by:�AKDA 

date�of�publication:�2016-04-04 revision:�V3.2 

3 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

**==> picture [86 x 38] intentionally omitted <==**

**IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L75R12W1H3_B27<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.2<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>150<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,90<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 10Ω<br>td on<br>0,022<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 10Ω<br>tr<br>0,01<br>0,012<br>0,012<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 10Ω<br>td off<br>0,16<br>0,18<br>0,185<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 10Ω<br>tf<br>0,025<br>0,037<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 10Ω<br>Eon<br>0,34<br>0,50<br>0,53<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, du/dt = 4700 V/µs (Tvj= 150°C)<br>RGoff= 10Ω<br>Eoff<br>0,85<br>1,15<br>1,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,900<br>1,00<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,850<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�D2�/�D3�/�Diode,�D2�/�D3** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|130<br>115|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,35<br>1,30|1,65|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||42,0<br>48,0<br>50,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,80<br>2,40<br>2,60||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,45<br>0,65<br>0,73||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,00|1,20|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,700||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2016-04-04 approved�by:�AKDA revision:�V3.2 

5 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,0<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

prepared�by:�CM date�of�publication:�2016-04-04 approved�by:�AKDA revision:�V3.2 

6 

## Technische�Information�/�Technical�Information 

## IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

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**Ausgangskennlinie�IGBT,�T1-T4�(typisch) output�characteristic�IGBT,�T1-T4�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,�T1-T4�(typisch) output�characteristic�IGBT,�T1-T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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60 60<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>50 50 VVGEGE = 13V = 11V<br>VGE = 9V<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,�T1-T4�(typisch) transfer�characteristic�IGBT,�T1-T4�(typical)** IC�=�f�(VGE) VCE�=�20�V 

**Schaltverluste�IGBT,�T1-T4�(typisch) switching�losses�IGBT,�T1-T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�6.8� Ω ,�RGoff�=�6.8� Ω ,�VCE�=�400�V 

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60 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 2,5 Eoff, Tvj = 150°C<br>40 2,0<br>30 1,5<br>20 1,0<br>10 0,5<br>0 0,0<br>5 6 7 8 9 10 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.2<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

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Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =30A,V CE =400V<br>4,0 10<br>Eon, Tvj = 125°C aEe Z thJH  : IGBT<br>Eoff, Tvj = 125°C<br>Po<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>3,0<br>2,0 1<br>1,0<br>I Ser eeeatiiiee atime<br>i: 1 2 3 4<br>ri[K/W]: 0,032 0,062 0,312 0,543<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,1 vil HL<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Rickwarts-Arbeitsbereich IGBT, T1-T4 (RBSOA) Durchlasskennlinie der Diode, D1 / D4 (typisch)<br>reverse bias safe operating area IGBT, T1-T4 (RBSOA) forward characteristic of Diode, D1 / D4 (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =68 Ω ,T vj =150°C<br>70 50<br>= IICC, Modul, Chip | 45 TTTvjvvjj = 25°C = 12 = 150°C5°C }<br>60<br>40<br>50<br>35<br>30<br>40<br>25<br>30<br>20<br>15<br>20<br>10<br>10<br>5<br>n/a Fa<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

IGBT-Modul IGBT-Module 

## F3L75R12W1H3_B27 

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Erec =f (I F) Erec =f(R G)<br>RGon =10 Ω ,V CE =400V IF =30A,V CE =400V<br>2,0 1,6<br>1,8 EErecrec, T, Tvjvj = 125°C = 150°C EErecrec, T, Tvjvj = 125°C = 150°C<br>1,4<br>1,6<br>1,2<br>1,4<br>1,0<br>1,2<br>~<br> ~<br>1,0 0,8<br>0,8 -<br>0,6<br>0,6<br>0,4<br>0,4<br>0,2<br>0,2<br>| ;<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 10 20 30 40 50 60 70 80 90 100<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D1 / D4 Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>transient thermal impedance Diode, D1 / D4 output characteristic IGBT, T2 / T3 (typical)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =15V<br>10 60<br>aA Z thJH : Diode 54 eLL TTTvjvvjj = 25°C = 12 = 150°C5°C<br>48<br>42<br>36<br>1 30<br>Sri 24<br>/Zh /<br>aot ott<br>18<br>Ht f /<br>Al 12 A<br>VA iN ‘<br>i: 1 2 3 4<br>ri[K/W]: 0,15 0,323 0,739 0,588<br>τ i[s]: 0,0005 0,005 0,05 0,2 6<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VCE  [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


9 

## Technische�Information�/�Technical�Information 

## IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

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**Ausgangskennlinienfeld�IGBT,�T2�/�T3�(typisch) output�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

**Übertragungscharakteristik�IGBT,�T2�/�T3�(typisch) transfer�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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60 60<br>54 VVVGEGEGE = 19V = 17V = 15V 54 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>VGE = 13V<br>48 VVGEGE = 11V = 9V 48<br>42 42<br>36 36<br>30 30<br>24 24<br>18 18<br>12 12<br>6 6<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE  [V] VGE  [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�10� Ω ,�RGoff�=�10� Ω ,�VCE�=�400�V 

**Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(RG),�Eoff�=�f�(RG) VGE�=�±15�V,�IC�=�30�A,�VCE�=�400�V 

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2,5 4,0<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>EEoffon, T, Tvjvj = 125°C = 150°C 3,5 EEoff on , T, Tvj vj  = 125°C = 150°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>2,0<br>3,0<br>2,5<br>1,5<br>2,0<br>1,0<br>1,5<br>1,0<br>0,5<br>0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90 100<br>IC [A] RG [ Ω ]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.2<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


10 

IGBT-Modul IGBT-Module 

## F3L75R12W1H3_B27 

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ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =10 Ω ,T vj =150°C<br>10 Loytt ty 70<br>Z thJH : IGBT IC, Modul<br>IC, Chip<br>fT = |<br>60<br>50<br>40<br>1<br>30<br>20<br>i: 1 2 3 4 10<br>ri[K/W]: 0,142 0,309 0,719 0,58<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,1 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE  [V]<br>Durchlasskennlinie der Diode, D2 / D3 (typisch) Schaltverluste Diode, D2 / D3 (typisch)<br>forward characteristic of Diode, D2 / D3 (typical) switching losses Diode, D2 / D3 (typical)<br>IF =f(V F) Erec =fil F)<br>RGon =6.8 Ω ,V CE =400V<br>60 1,00<br>55 Ee. T T Tvj vj vj = 25°C  = 125°C  = 150°C fF] / 0,90 aa EErecrec, T, Tvjvj = 125°C = 150°C<br>50<br>0,80<br>45<br>0,70<br>40 eeLi<br>/ ee<br>35 ee) 0,60<br>/ eee ;<br>30 0,50<br>/on (7<br>25<br>0,40<br>20<br>ee / 2 ee }<br>/Mi 0,30 y,<br>15<br>Pf<br>/<br>VA 0,20<br>10<br>5 0,10<br>ee) a<br>0 SS A 0,00<br>0,0 0,5 1,0 1,5 2,0 0 10 20 30 40 50 60<br>VF [V] IF [A]<br> [K/W]thJH  [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


11 

IGBT-Modul IGBT-Module 

## F3L75R12W1H3_B27 

## 

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Erec =f(R G) ZthJH =f (t)<br>IF =30A,V CE =400V<br>0,90 10<br>Erec, Tvj = 125°C IE Z thJH : Diode ee<br>Erec, Tvj = 150°C<br>0,80 = | PTanEe<br>\<br>0,70<br>\<br>\<br>0,60<br>\ 0<br>AS<br>0,50<br>1<br>0,40<br>Sena cotiimmetiiLbert | memati<br>0,30<br>0,20<br>i: 1 2 3 4<br>0,10 r τ ii[K/W]:[s]: 0,250,0005 0,30,005 0,50,05 0,650,2<br>0,00 0,1<br>0 10 20 30 40 50 60 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>Rtyp<br>————<br>10000<br>Ki EE |<br>————NO [oe]<br>1000 (aEeaaNeeee———oe<br>PN<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


12 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L75R12W1H3_B27 

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## **Schaltplan�/�Circuit�diagram** 

## **Gehäuseabmessungen�/�Package�outlines** 

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J<br>Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM approved�by:�AKDA 

date�of�publication:�2016-04-04 revision:�V3.2 

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IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br>


## F3L75R12W1H3_B27 

## **Nutzungsbedingungen** 

## **WARNHINWEIS** 

## **WARNINGS** 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/F3L75R12W1H3B27BOMA1/igbt-module-three-level-inverter-45-a-145-v-275-w)
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- [Supplier page](https://es.farnell.com/infineon/f3l75r12w1h3b27boma1/igbt-mod-4-n-ch-1-2kv-45a-275w/dp/3294633)
---

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