# IGBT Module, Three level Inverter, 220 A, 1.4 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3577289/)

**URL**: https://novapart.co/products/F3L400R10W3S7FB11BPSA1/igbt-module-three-level-inverter-220-a-14-v-150-c
**SKU**: F3L400R10W3S7FB11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €123.5700
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK TRENCHSTOP |
| Igbt Technology | IGBT 7 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Dc Collector Current | 220A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 220A |
| Collector Emitter Voltage Max | 950V |
| Collector Emitter Voltage V(Br)Ceo | 950V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Saturation Voltage Vce(On) | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577289/)

## F3L400R10W3S7F_B11 

VCES = 950V IC nom = 400A / ICRM = 800A 

- 3-Level-Applikationen 

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- CoolSiC[TM] 

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- Trenchstop[TM] 

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- 3-level-applications 

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- CoolSiC[TM] 

- 

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- Trenchstop[TM] 

- 

- 

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**Digit** 

Datasheet www.infineon.com 

2020-04-02 

F3L400R10W3S7F_B11 

**==> picture [86 x 38] intentionally omitted <==**

|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|220|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,40<br>1,48<br>1,50|1,60|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,90||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||25,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,078||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,071|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,094<br>0,094<br>0,094||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,033<br>0,033<br>0,033||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,74<br>0,81<br>0,82||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,033<br>0,057<br>0,07||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 4200 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||4,30<br>4,30<br>4,30||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 4600 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||5,00<br>6,60<br>7,30||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,240||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



2 

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Datasheet 

F3L400R10W3S7F_B11 

**==> picture [86 x 38] intentionally omitted <==**

|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|295|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,07<br>1,04<br>1,02|1,15|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= 20 V, Tvj= 25°C|VGEth|4,15|4,90|5,65|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||4,10||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||49,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,228||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,071|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,21<br>0,19<br>0,18||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,034<br>0,038<br>0,039||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,85<br>0,96<br>0,98||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,24<br>0,45<br>0,50||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 4500 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||3,35<br>3,46<br>3,49||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 1350 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||24,8<br>35,6<br>37,9||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,280||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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F3L400R10W3S7F_B11 

**==> picture [86 x 38] intentionally omitted <==**

|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|200|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|115|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|400|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,68<br>1,88<br>1,92|2,00|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 3,25 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,45||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||12,6||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,039||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,1|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,086<br>0,093<br>0,094||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,027<br>0,03<br>0,03||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 30Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,57<br>0,615<br>0,625||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 30Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,024<br>0,052<br>0,073||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 4000 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||6,35<br>7,60<br>8,00||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 5800 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 30Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||5,00<br>6,30<br>6,80||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||600||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,451||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



V�3.0 2020-04-02 

Datasheet 

4 

F3L400R10W3S7F_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�D1�/�D4�/�Diode,�D1�/�D4 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,54|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||90,0<br>130<br>140||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>10,0<br>12,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,50<br>3,30<br>3,95||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,570||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�D2�/�D3�/�Diode,�D2�/�D3 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,06|2,54|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||133<br>180<br>195||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||6,00<br>13,0<br>15,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,40<br>5,70<br>6,80||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,570||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



V�3.0 2020-04-02 

Datasheet 

5 

F3L400R10W3S7F_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�D5-D6�/�Diode,�D5-D6** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1650<br>1550|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,75<br>1,85|1,75|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||60,0<br>60,0<br>60,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,85<br>1,85<br>1,85||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,68<br>0,68<br>0,68||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,474||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,2<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,8<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||9,4<br>5,5<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|Schraube-Montagegem.gültigerApplikationsschrift<br>Screw-Mountingaccordingtovalidapplicationnote|M|1,30||1,50|Nm|
|Gewicht<br>Weight||G||78||g|



Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. IGBT- und Dioden-RthJH-Parameter mit einer Wärmeleitpaste λ Paste = 3.3 W/(m·K) gemessen IGBT- and diode- RthJH parameters measured with thermal grease of λ Paste = 3.3 W/(m·K) 

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**Ausgangskennlinie�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
300 300<br>T T vj vj  = 25°C  = 125 ° C V V GE GE  = 19V  = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE = 9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 0,5 1,0 1,5 2,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,�T1�/�T4�(typisch) transfer�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
300<br>T T vj vj  = 25°C  = 125 ° C<br>Tvj = 150°C<br>250<br>200<br>150<br>100<br>50<br>0<br>4 5 6 7 8<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,�T1�/�T4�(typisch) switching�losses�IGBT,�T1�/�T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�5� Ω ,�RGoff�=�20� Ω ,�VCE�=�500�V 

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**----- Start of picture text -----**<br>
16<br>Eon, Tvj = 125°C<br>Eoff, Tvj = 125°C<br>14 EEonoff, T, Tvjvj = 150°C = 150°C<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f{(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(| C f C)<br>VGE =4+15V,1 C =150A,V CE =500V VGE =4+15V,R Gon =5 Ω ,R Goff =20 Ω ,V_ CE =500V,Tvj = 150°C<br>50 10<br>SS EE on off, T, T vj vj = 125°C; E = 125 ° C on , T vj  = 150°C ————el ttdon r a<br>Eoff, Tvj = 150°C EH t doff [On<br>enn| t f<br>40<br>Cott ft<br>LL CE al mean 1<br>LLL LEE | LH a<br>I<br>30<br>H [i]<br>CE<br>ae LH 0,1 ———<br>A<br>20<br>a U onl =-= — —_<br>EEE —<br>|_| j nn 0,01 27<br>10 : a<br>meee ae “7 a<br>LE<br>ee<br>0 0,001<br>1 10 100 1000 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT, T1 / T4 (typisch) Transienter Warmewiderstand IGBT, T1 / T4<br>switching times IGBT, T1 / T4 (typical) transient thermal impedance IGBT, T1 / T4<br>tdon =f(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE = 500, Tvj = 150°C<br>10 1<br>tdon ZthJH : IGBT<br>|||H ttt rdofff HetAHeiHo tttt EH frPLNPtaET|<br>|<br>7<br>7<br>con Cte<br>1 0,1<br>po ce On pea oe<br>a PE te<br>a eee po TT PA<br>Shi caiiecat Sr ati Saati<br>0,1 0,01<br>— |<br>Ht Z<br>i: 1 2 3 4<br>ri[K/W]: 0,0064 0,0236 0,108 0,102<br>τ i[s]: 0,00041 0,00948 0,137 0,137<br>0,01 0,001<br>1 10 100 1000 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>E [mJ] t [µs]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V CE) C=f(V CE)<br>VGE =415V,R Goff =20 Ω ,T vj =150°C VGE =0V,T vj = 25°C,f = 100kHz<br>1000 1000<br>IC, Modul 1 | C ies a a<br>IC, Chip Coes<br>900 C res<br>800 100<br>700 | | | a a<br>600 PFET 10<br>TT ELIE) 6a<br>500<br>400 1 N<br> = =<br>poea<br>300<br>\<br>\<br>N<br>Ne<br>200 0,1 SSS<br>100<br>0 0,01<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>VCE  [V] VCE [V]<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>


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VGE =f(Q G) IC =f(V CE)<br>IC =400A,T vj =25°C VGE =15V<br>15 300<br>VCC =  600V T T vj vj  = 25°C  = 125 ° C<br>12 Tvj = 150°C<br>250<br>9<br>6 || IHiI<br>200<br>H<br>3 HI<br>il<br>0 150 i!<br>jl<br>il<br>-3 il<br>il<br>100<br>-6 il/<br>il<br>-9 //<br>50 it<br>//<br>-12 //<br>//<br>-15 0 “<Z.4<br>0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 0,0 0,5 1,0 1,5<br>QG [µC] VCE [V]<br> [V]<br> [A]<br>VGE IC<br>**----- End of picture text -----**<br>


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IC =f(V CE) IC =f(V GE)<br>Tvj = 150°C VCE =20V<br>300 300<br>V V GE GE  = 19V  = 17V nr T T vj vj  = 25°C  = 125 ° C<br>VGE = 15V Tvj = 150°C<br>VGE = 13V<br>250 VGE = 11V 250<br>VGE = 9V nf j<br>Hi il<br>200 cil 200 i!<br>Hf:<br>fli [|] |/i i<br>150 150<br>fi; i /<br>fi i |<br>4 Hl / /<br>100 100<br>yf yy! i /<br>f /<br>/]<br>y if/<br>/<br>i /<br>50 f 50 /<br>/ [/]<br>//<br>“ /<br>0 0<br>0,0 0,5 1,0 1,5 4 5 6 7 8<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =5 Ω ,R Goff =5 Ω ,V CE =500V VGE =+15V,1 C =150A,V CE =500V<br>60 60<br>E E on off , T , T vj vj  = 125°C  = 125 ° C E E on off , T , T vj vj  = 125°C  = 125 ° C<br>Eon, Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>50 50<br>40 40<br>or Aa<br>my 7 as<br>30 30<br>eaf LO<br>if LD “wn<br>“ Ce<br>7 Z<br>20 if 20 LO<br>’ Fg<br>10 10<br>7<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IC [A] RG [ Ω ]<br> [A]  [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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tdon =f(l),t=f(l)t C r C doff =f(l),t C f =f(l C) tdon =f{(R)t=f(R),t G r G doff =f(R),t=f(R G f G)<br>VGE =415V,R Gon =5 Ω ,R Goff =5 Ω ,V_ CE =500V, Tvj= 150°C VGE =+15V,1 C =150A,V CE =500V, Tvj= 150°C<br>10 10<br>tdon tdon<br>t r t r<br>t doff t doff<br>t f t f<br>SSS ===<br>N N - -<br>PX] | |<br>NS wo<br>1 Bane Seea 1 Per2 EE —<br>a a<br>Se aee<br>0,1 0,1<br>_——_——— Sdanepeaan<br>= — —<br>es ee ne a ee<br>_<br>=<br>a<br>0,01 0,01<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IC [A] RG [ Ω ]<br>Transienter Warmewiderstand IGBT, T2 / T3 Sicherer Riickwarts-Arbeitsbereich IGBT, T2 / T3 (RBSOA)<br>transient thermal impedance IGBT, T2 / T3 reverse bias safe operating area IGBT, T2 / T3 (RBSOA)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =5 Ω ,T vj =150°C<br>1 a eeee ee 1000<br>ZthJH : IGBT IC, Modul<br>eee| ee IC, Chip<br>HES 900 = |<br>800<br>700<br>0,1<br>600<br>500<br>400<br>0,01<br>300<br>200<br>i: 1 2 3 4<br>ri[K/W]: 0,0061 0,0203 0,0436 0,21 100<br>τ i[s]: 0,000648 0,00972 0,0585 0,215<br>0,001 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800 900 1000<br>t [s] VCE  [V]<br>t [µs] t [µs]<br> [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


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**Kapazitäts�Charakteristik�IGBT,�T2�/�T3�(typisch) capacity�characteristic�IGBT,�T2�/�T3�(typical)** C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�100kHz 

**Gateladungs�Charakteristik�IGBT,�T2�/�T3�(typisch) gate�charge�characteristic�IGBT,�T2�/�T3�(typical)** VGE�=�f(QG) IC�=�400�A,�Tvj�=�25°C 

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1000 15<br>Cies VCC = 600 V<br>C oes<br>C res 12<br>9<br>100<br>6<br>3<br>10 0<br>-3<br>-6<br>1<br>-9<br>-12<br>0,1 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>


**Ausgangskennlinie�IGBT,�T5�/�T6�(typisch) output�characteristic�IGBT,�T5�/�T6�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,�T5�/�T6�(typisch) output�characteristic�IGBT,�T5�/�T6�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
300 300<br>T T vj vj  = 25°C  = 125 ° C V V GE GE  = 19V  = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE = 9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =5 Ω ,R Goff =30 Ω ,V CE =500V<br>300 20<br>T T vj vj  = 25°C  = 125 ° C E E on off , T , T vj vj  = 125  = 125°C° C<br>Tvj = 150°C E on , T vj  = 150°C<br>J Eoff, Tvj = 150°C<br>250 a | } =<br>i<br>H 15 7<br>H ¢ALof1y,<br>200 I if | Wu4G<br>i | LL7 OL<br>} LL&L<br>i ms OL<br>150 /i! 10 y;7, aeae<br>if I OG7 o<br>j! | oe, woe<br>100 | W wn<br>5<br>“eo<br>50<br>foo<br>Pa |<br>4<br>0 0<br>4 5 6 7 8 9 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =150A,V CE =500V VGE =415V,R Gon =5 Ω ,R Goff =30 Ω ,V_ CE =500V,Tvj = 150°C<br>50 10<br>EE on off, T, T vj vj = 125°C = 125 ° C ttdon r<br>Eon, Tvj = 150°C t doff<br>Eoff, Tvj = 150°C t f<br>40 Bgl a [2S]<br>| | E | 1 ——— a<br>| | I |<br>30<br>| MoeLe<br>| anal 0,1 ———<br>20<br>| Mea | a<br>10 7 YH 7AVWef :i| 0,01 aapon<br>o a<br>0 0,001<br>1 10 100 1000 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE =500V, Tvj = 150°C<br>10 1<br>tdon ZthJH : IGBT<br>a t r f— eee<br>t doff<br>t f<br>= Sea Per HE<br>= / vanillin<br>a Al Ee<br>1 UMEPtaTTIa 0,1 LITTPai<br>PT et ee<br>pT PT Tim<br>a TT PT<br>ail<br>7<br>0,1 | 0,01<br>SSS a<br>Pe ET<br>i: 1 2 3 4<br>ri[K/W]: 0,038 0,138 0,138 0,137<br>τ i[s]: 0,00284 0,122 0,122 0,122<br>0,01 0,001 TTT VET ETT<br>1 10 100 1000 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T5 / T6 (RBSOA) Kapazitats Charakteristik IGBT, T5 / T6 (typisch)<br>reverse bias safe operating area IGBT, T5 / T6 (RBSOA) capacity characteristic IGBT, T5 / T6 (typical)<br>IC =f(V CE) C=f(V CE)<br>VGE NS V.R Goff =30 Ω ,T vj =150°C VGE OO V.T vj = 25°C, f = 100kHz<br>500 1000<br>IC, Modul C ies<br>IC, Chip Coes<br>C res<br>400 100<br>===<br>A<br>aeeee<br>300 10 et<br>===—S==S==<br>200 1<br>aop pp<br>a a<br>po a<br>100 0,1 ———ts<br>a<br>0 0,01<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>VCE  [V] VCE [V]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>


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VGE = f(Q G) IF =f(V F)<br>IC =200A,T vj =25°C<br>15 300<br>/<br>12 VCC = 600 V T T Tvj vj vj = 25°C  = 125  = 150°C° C iIifil<br>250<br>9<br>6<br>200<br>3<br>0 150<br>-3<br>100<br>-6<br>-9<br>50<br>-12<br>-15 0<br>0,0 0,1 0,2 0,3 0,4 0,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>QG [µC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>


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Erec =f il F) Erec =f(R G)<br>RGon =5 Ω ,V CE =500V IF =150A,V CE =500V<br>6 6<br>E E rec rec , T , T vj vj  = 125°C  = 150 ° C Za E E rec rec , T , T vj vj  = 125°C  = 150 ° C<br>= | a“ 4 |e<br>a<br>5 “a 5<br>a<br>7<br>a<br>7<br>7<br>4 17 4<br>7 \<br>WaL77 \\\<br>3 7 3 N<br>7/ SJ XN<br>// NL ~~<br>2 // 2 ~SLL Sed<br>:<br>1 1<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJH =f (t) IF =f(V F)<br>1 pot TE 300 /<br>[— ZthJH : Diode | T T vj vj  = 25°C  = 125 ° C i/<br>Tvj = 150°C if<br>250<br>200<br>0,1 150<br>100<br>50<br>i: 1 2 3 4<br>ri[K/W]: 0,024 0,113 0,216 0,217<br>τ i[s]: 0,000553 0,0128 0,123 0,123<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>t [s] VF [V]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


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Erec =f il F) Erec =f(R G)<br>RGon =5 Ω ,V CE =500V IF =150A,V CE =500V<br>10 10<br>Erec, Tvj = 125 ° C Erec, Tvj = 125 ° C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>9 9<br>a<br>=<br>a<br>a<br>8 8<br>~<br>7 Z 7 ee ee<br>\<br>\<br>6 6 \<br>\<br>\<br>5 5 ~<br>NN<br>»~<br>NX<br>4 4 ~<br>~ ~~ —<br>3 3<br>2 Me 2 HF} et<br>1 1<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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F3L400R10W3S7F_B11 

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ZthJH =f (t) IF =f(V F)<br>1 200<br>pot ZthJH : Diode TE Tvj = 25 ° C / /<br>Tvj = 125°C<br>a HE T vj  = 150°C ii<br>| Jf<br>| // / 4<br>150 // /<br>| ///<br>| lf<br>| wi<br>//<br>0,1 100 //<br>/ fe//<br>//<br>ft<br>//<br>50 if<br>ii<br>i: 1 2 3 4<br>ri[K/W]: 0,024 0,113 0,216 0,217<br>τ i[s]: 0,000553 0,0128 0,123 0,123<br>y,<br>Po if<br>Dh PeaJ<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VF [V]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


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Erec =f il F) Erec =f(R G)<br>RGon =5 Ω ,V CE =500V IF =100A,V CE =500V<br>1,0 1,0<br>Erec, Tvj = 125 ° C; Erec, Tvj = 150 ° C Erec, Tvj = 125 ° C; Erec, Tvj = 150 ° C<br>0,9 0,9<br>0,8 0,8<br>0,7 0,7<br>0,6 0,6<br>0,5 0,5<br>0,4 0,4<br>0,3 0,3<br>0,2 0,2<br>0,1 0,1<br>0,0 0,0<br>0 50 100 150 200 0 10 20 30 40 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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F3L400R10W3S7F_B11 

ZthJH 

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1 100000<br>SST ee<br>ZthJH : Diode Rtyp<br>SeLET] en animalaee Seel<br>Cnn<br>0,1 10000<br>EEE ee ——<br>ene ee ee ee ee ee<br>HC a<br>0,01 1000<br>tr Ec ern Coo ee ee ee ee<br>i: 1 2 3 4<br>ri[K/W]: 0,0296 0,0904 0,176 0,178<br>τ i[s]: 0,000678 0,0105 0,122 0,122<br>0,001 1 100 os<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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F3L400R10W3S7F_B11 

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dimensioned for  EJOT Delta PT WN5451 25<br>B choose length according to pcb thickness 4x 0,25 A B C ( 2,3) Dome 3,5 4x pcb hole pattern<br>4x<br>0 ee_110 1 2 2<br>26 DC+ N1 N2 DC-<br>24 NTC1<br>20,817,6 E4 NTC2<br>r+ 14 i y 00000000008 ' (@e@00800000 "g = 14,4 — carcamean i an G4 t ma \<br>K _ S@ 9000(_)9000[088898889 | bo00-~po00(_)oo0c8000 d) \ + = 4,8 | | ee E5 | \!<br>0 a 000 ses s S ess 200 0 —_ - oO 1,60 \ | itl | G5 | | rit | !<br>[AZ J ||l00000000000||essseeeese | 0000000e000)||leoosseoessa]|\ = 4,8 ee 8 S n Me Cx G1 are OS E1 Gis ee ARRREnSSant G6 E6 E3G3 Cy j<br>14<br>20,8 G2<br>26 24 E2 AC1 AC2<br>4 |<br>LU UU<br>109,9 . 0,45<br>C WLU GU<br>Oo A<br>___ WIV T/T<br>. recommended design hight 2 TEVDOUNIDesDOUNNDUONDDee<br>,2)<br>,4)<br>ABC<br>0,25<br>2x<br>0,1 2x 12<br>5,4 2x  according to screw head washer<br>0,45<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>29,68 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08<br>0,1<br>12,2 (12) (16,4)<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/F3L400R10W3S7FB11BPSA1/igbt-module-three-level-inverter-220-a-14-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/f3l400r10w3s7fb11bpsa1/igbt-module-six-n-channel-950v/dp/3577289)
---

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