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F3L400R10W3S7FB11BPSA1
IGBT Module, Three level Inverter, 220 A, 1.4 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK TRENCHSTOP
- IGBT Technology: IGBT 7 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- DC Collector Current: 220A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 220A
- Collector Emitter Voltage Max: 950V
- Collector Emitter Voltage V(br)ceo: 950V
- Collector Emitter Saturation Voltage: 1.4V
- Collector Emitter Saturation Voltage Vce(on): 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 123.57 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## F3L400R10W3S7F_B11
VCES = 950V IC nom = 400A / ICRM = 800A
- 3-Level-Applikationen
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- CoolSiC[TM]
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- Trenchstop[TM]
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- 3-level-applications
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- CoolSiC[TM]
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- Trenchstop[TM]
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**Digit**
Datasheet www.infineon.com
2020-04-02
F3L400R10W3S7F_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|220|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,40<br>1,48<br>1,50|1,60|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,90||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||25,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,078||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,071|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,094<br>0,094<br>0,094||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,033<br>0,033<br>0,033||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,74<br>0,81<br>0,82||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,033<br>0,057<br>0,07||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 4200 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||4,30<br>4,30<br>4,30||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 4600 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||5,00<br>6,60<br>7,30||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,240||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
2
V�3.0 2020-04-02
Datasheet
F3L400R10W3S7F_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|295|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,07<br>1,04<br>1,02|1,15|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= 20 V, Tvj= 25°C|VGEth|4,15|4,90|5,65|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||4,10||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||49,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,228||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,071|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,21<br>0,19<br>0,18||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,034<br>0,038<br>0,039||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,85<br>0,96<br>0,98||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,24<br>0,45<br>0,50||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 4500 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||3,35<br>3,46<br>3,49||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 1350 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||24,8<br>35,6<br>37,9||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,280||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
3
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Datasheet
F3L400R10W3S7F_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|200|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|115|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|400|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,68<br>1,88<br>1,92|2,00|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 3,25 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,45||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||12,6||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,039||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,1|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,086<br>0,093<br>0,094||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,027<br>0,03<br>0,03||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 30Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,57<br>0,615<br>0,625||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 30Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,024<br>0,052<br>0,073||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 4000 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 5,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||6,35<br>7,60<br>8,00||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 5800 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 30Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||5,00<br>6,30<br>6,80||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||600||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,451||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
V�3.0 2020-04-02
Datasheet
4
F3L400R10W3S7F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�D1�/�D4�/�Diode,�D1�/�D4 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,54|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||90,0<br>130<br>140||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>10,0<br>12,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,50<br>3,30<br>3,95||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,570||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Diode,�D2�/�D3�/�Diode,�D2�/�D3 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,06|2,54|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||133<br>180<br>195||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||6,00<br>13,0<br>15,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,40<br>5,70<br>6,80||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,570||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
V�3.0 2020-04-02
Datasheet
5
F3L400R10W3S7F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�D5-D6�/�Diode,�D5-D6**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1650<br>1550|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,75<br>1,85|1,75|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||60,0<br>60,0<br>60,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,85<br>1,85<br>1,85||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,68<br>0,68<br>0,68||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,474||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,2<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,8<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||9,4<br>5,5<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|Schraube-Montagegem.gültigerApplikationsschrift<br>Screw-Mountingaccordingtovalidapplicationnote|M|1,30||1,50|Nm|
|Gewicht<br>Weight||G||78||g|
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. IGBT- und Dioden-RthJH-Parameter mit einer Wärmeleitpaste λ Paste = 3.3 W/(m·K) gemessen IGBT- and diode- RthJH parameters measured with thermal grease of λ Paste = 3.3 W/(m·K)
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F3L400R10W3S7F_B11
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**Ausgangskennlinie�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C
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300 300<br>T T vj vj = 25°C = 125 ° C V V GE GE = 19V = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE = 9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 0,5 1,0 1,5 2,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,�T1�/�T4�(typisch) transfer�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VGE) VCE�=�20�V
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300<br>T T vj vj = 25°C = 125 ° C<br>Tvj = 150°C<br>250<br>200<br>150<br>100<br>50<br>0<br>4 5 6 7 8<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
## **Schaltverluste�IGBT,�T1�/�T4�(typisch) switching�losses�IGBT,�T1�/�T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�5� Ω ,�RGoff�=�20� Ω ,�VCE�=�500�V
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16<br>Eon, Tvj = 125°C<br>Eoff, Tvj = 125°C<br>14 EEonoff, T, Tvjvj = 150°C = 150°C<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
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Eon =f{(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(| C f C)<br>VGE =4+15V,1 C =150A,V CE =500V VGE =4+15V,R Gon =5 Ω ,R Goff =20 Ω ,V_ CE =500V,Tvj = 150°C<br>50 10<br>SS EE on off, T, T vj vj = 125°C; E = 125 ° C on , T vj = 150°C ————el ttdon r a<br>Eoff, Tvj = 150°C EH t doff [On<br>enn| t f<br>40<br>Cott ft<br>LL CE al mean 1<br>LLL LEE | LH a<br>I<br>30<br>H [i]<br>CE<br>ae LH 0,1 ———<br>A<br>20<br>a U onl =-= — —_<br>EEE —<br>|_| j nn 0,01 27<br>10 : a<br>meee ae “7 a<br>LE<br>ee<br>0 0,001<br>1 10 100 1000 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT, T1 / T4 (typisch) Transienter Warmewiderstand IGBT, T1 / T4<br>switching times IGBT, T1 / T4 (typical) transient thermal impedance IGBT, T1 / T4<br>tdon =f(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE = 500, Tvj = 150°C<br>10 1<br>tdon ZthJH : IGBT<br>|||H ttt rdofff HetAHeiHo tttt EH frPLNPtaET|<br>|<br>7<br>7<br>con Cte<br>1 0,1<br>po ce On pea oe<br>a PE te<br>a eee po TT PA<br>Shi caiiecat Sr ati Saati<br>0,1 0,01<br>— |<br>Ht Z<br>i: 1 2 3 4<br>ri[K/W]: 0,0064 0,0236 0,108 0,102<br>τ i[s]: 0,00041 0,00948 0,137 0,137<br>0,01 0,001<br>1 10 100 1000 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>E [mJ] t [µs]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE) C=f(V CE)<br>VGE =415V,R Goff =20 Ω ,T vj =150°C VGE =0V,T vj = 25°C,f = 100kHz<br>1000 1000<br>IC, Modul 1 | C ies a a<br>IC, Chip Coes<br>900 C res<br>800 100<br>700 | | | a a<br>600 PFET 10<br>TT ELIE) 6a<br>500<br>400 1 N<br> = =<br>poea<br>300<br>\<br>\<br>N<br>Ne<br>200 0,1 SSS<br>100<br>0 0,01<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>VCE [V] VCE [V]<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>
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VGE =f(Q G) IC =f(V CE)<br>IC =400A,T vj =25°C VGE =15V<br>15 300<br>VCC = 600V T T vj vj = 25°C = 125 ° C<br>12 Tvj = 150°C<br>250<br>9<br>6 || IHiI<br>200<br>H<br>3 HI<br>il<br>0 150 i!<br>jl<br>il<br>-3 il<br>il<br>100<br>-6 il/<br>il<br>-9 //<br>50 it<br>//<br>-12 //<br>//<br>-15 0 “<Z.4<br>0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 0,0 0,5 1,0 1,5<br>QG [µC] VCE [V]<br> [V]<br> [A]<br>VGE IC<br>**----- End of picture text -----**<br>
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IC =f(V CE) IC =f(V GE)<br>Tvj = 150°C VCE =20V<br>300 300<br>V V GE GE = 19V = 17V nr T T vj vj = 25°C = 125 ° C<br>VGE = 15V Tvj = 150°C<br>VGE = 13V<br>250 VGE = 11V 250<br>VGE = 9V nf j<br>Hi il<br>200 cil 200 i!<br>Hf:<br>fli [|] |/i i<br>150 150<br>fi; i /<br>fi i |<br>4 Hl / /<br>100 100<br>yf yy! i /<br>f /<br>/]<br>y if/<br>/<br>i /<br>50 f 50 /<br>/ [/]<br>//<br>“ /<br>0 0<br>0,0 0,5 1,0 1,5 4 5 6 7 8<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =5 Ω ,R Goff =5 Ω ,V CE =500V VGE =+15V,1 C =150A,V CE =500V<br>60 60<br>E E on off , T , T vj vj = 125°C = 125 ° C E E on off , T , T vj vj = 125°C = 125 ° C<br>Eon, Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>50 50<br>40 40<br>or Aa<br>my 7 as<br>30 30<br>eaf LO<br>if LD “wn<br>“ Ce<br>7 Z<br>20 if 20 LO<br>’ Fg<br>10 10<br>7<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IC [A] RG [ Ω ]<br> [A] [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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tdon =f(l),t=f(l)t C r C doff =f(l),t C f =f(l C) tdon =f{(R)t=f(R),t G r G doff =f(R),t=f(R G f G)<br>VGE =415V,R Gon =5 Ω ,R Goff =5 Ω ,V_ CE =500V, Tvj= 150°C VGE =+15V,1 C =150A,V CE =500V, Tvj= 150°C<br>10 10<br>tdon tdon<br>t r t r<br>t doff t doff<br>t f t f<br>SSS ===<br>N N - -<br>PX] | |<br>NS wo<br>1 Bane Seea 1 Per2 EE —<br>a a<br>Se aee<br>0,1 0,1<br>_——_——— Sdanepeaan<br>= — —<br>es ee ne a ee<br>_<br>=<br>a<br>0,01 0,01<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IC [A] RG [ Ω ]<br>Transienter Warmewiderstand IGBT, T2 / T3 Sicherer Riickwarts-Arbeitsbereich IGBT, T2 / T3 (RBSOA)<br>transient thermal impedance IGBT, T2 / T3 reverse bias safe operating area IGBT, T2 / T3 (RBSOA)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =5 Ω ,T vj =150°C<br>1 a eeee ee 1000<br>ZthJH : IGBT IC, Modul<br>eee| ee IC, Chip<br>HES 900 = |<br>800<br>700<br>0,1<br>600<br>500<br>400<br>0,01<br>300<br>200<br>i: 1 2 3 4<br>ri[K/W]: 0,0061 0,0203 0,0436 0,21 100<br>τ i[s]: 0,000648 0,00972 0,0585 0,215<br>0,001 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800 900 1000<br>t [s] VCE [V]<br>t [µs] t [µs]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br>
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**Kapazitäts�Charakteristik�IGBT,�T2�/�T3�(typisch) capacity�characteristic�IGBT,�T2�/�T3�(typical)** C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�100kHz
**Gateladungs�Charakteristik�IGBT,�T2�/�T3�(typisch) gate�charge�characteristic�IGBT,�T2�/�T3�(typical)** VGE�=�f(QG) IC�=�400�A,�Tvj�=�25°C
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1000 15<br>Cies VCC = 600 V<br>C oes<br>C res 12<br>9<br>100<br>6<br>3<br>10 0<br>-3<br>-6<br>1<br>-9<br>-12<br>0,1 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>
**Ausgangskennlinie�IGBT,�T5�/�T6�(typisch) output�characteristic�IGBT,�T5�/�T6�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,�T5�/�T6�(typisch) output�characteristic�IGBT,�T5�/�T6�(typical)** IC�=�f�(VCE) Tvj�=�150°C
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300 300<br>T T vj vj = 25°C = 125 ° C V V GE GE = 19V = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE = 9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =5 Ω ,R Goff =30 Ω ,V CE =500V<br>300 20<br>T T vj vj = 25°C = 125 ° C E E on off , T , T vj vj = 125 = 125°C° C<br>Tvj = 150°C E on , T vj = 150°C<br>J Eoff, Tvj = 150°C<br>250 a | } =<br>i<br>H 15 7<br>H ¢ALof1y,<br>200 I if | Wu4G<br>i | LL7 OL<br>} LL&L<br>i ms OL<br>150 /i! 10 y;7, aeae<br>if I OG7 o<br>j! | oe, woe<br>100 | W wn<br>5<br>“eo<br>50<br>foo<br>Pa |<br>4<br>0 0<br>4 5 6 7 8 9 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =150A,V CE =500V VGE =415V,R Gon =5 Ω ,R Goff =30 Ω ,V_ CE =500V,Tvj = 150°C<br>50 10<br>EE on off, T, T vj vj = 125°C = 125 ° C ttdon r<br>Eon, Tvj = 150°C t doff<br>Eoff, Tvj = 150°C t f<br>40 Bgl a [2S]<br>| | E | 1 ——— a<br>| | I |<br>30<br>| MoeLe<br>| anal 0,1 ———<br>20<br>| Mea | a<br>10 7 YH 7AVWef :i| 0,01 aapon<br>o a<br>0 0,001<br>1 10 100 1000 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>
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F3L400R10W3S7F_B11
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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE =500V, Tvj = 150°C<br>10 1<br>tdon ZthJH : IGBT<br>a t r f— eee<br>t doff<br>t f<br>= Sea Per HE<br>= / vanillin<br>a Al Ee<br>1 UMEPtaTTIa 0,1 LITTPai<br>PT et ee<br>pT PT Tim<br>a TT PT<br>ail<br>7<br>0,1 | 0,01<br>SSS a<br>Pe ET<br>i: 1 2 3 4<br>ri[K/W]: 0,038 0,138 0,138 0,137<br>τ i[s]: 0,00284 0,122 0,122 0,122<br>0,01 0,001 TTT VET ETT<br>1 10 100 1000 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T5 / T6 (RBSOA) Kapazitats Charakteristik IGBT, T5 / T6 (typisch)<br>reverse bias safe operating area IGBT, T5 / T6 (RBSOA) capacity characteristic IGBT, T5 / T6 (typical)<br>IC =f(V CE) C=f(V CE)<br>VGE NS V.R Goff =30 Ω ,T vj =150°C VGE OO V.T vj = 25°C, f = 100kHz<br>500 1000<br>IC, Modul C ies<br>IC, Chip Coes<br>C res<br>400 100<br>===<br>A<br>aeeee<br>300 10 et<br>===—S==S==<br>200 1<br>aop pp<br>a a<br>po a<br>100 0,1 ———ts<br>a<br>0 0,01<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>VCE [V] VCE [V]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>
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F3L400R10W3S7F_B11
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VGE = f(Q G) IF =f(V F)<br>IC =200A,T vj =25°C<br>15 300<br>/<br>12 VCC = 600 V T T Tvj vj vj = 25°C = 125 = 150°C° C iIifil<br>250<br>9<br>6<br>200<br>3<br>0 150<br>-3<br>100<br>-6<br>-9<br>50<br>-12<br>-15 0<br>0,0 0,1 0,2 0,3 0,4 0,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>QG [µC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>
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Erec =f il F) Erec =f(R G)<br>RGon =5 Ω ,V CE =500V IF =150A,V CE =500V<br>6 6<br>E E rec rec , T , T vj vj = 125°C = 150 ° C Za E E rec rec , T , T vj vj = 125°C = 150 ° C<br>= | a“ 4 |e<br>a<br>5 “a 5<br>a<br>7<br>a<br>7<br>7<br>4 17 4<br>7 \<br>WaL77 \\\<br>3 7 3 N<br>7/ SJ XN<br>// NL ~~<br>2 // 2 ~SLL Sed<br>:<br>1 1<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJH =f (t) IF =f(V F)<br>1 pot TE 300 /<br>[— ZthJH : Diode | T T vj vj = 25°C = 125 ° C i/<br>Tvj = 150°C if<br>250<br>200<br>0,1 150<br>100<br>50<br>i: 1 2 3 4<br>ri[K/W]: 0,024 0,113 0,216 0,217<br>τ i[s]: 0,000553 0,0128 0,123 0,123<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br>
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Erec =f il F) Erec =f(R G)<br>RGon =5 Ω ,V CE =500V IF =150A,V CE =500V<br>10 10<br>Erec, Tvj = 125 ° C Erec, Tvj = 125 ° C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>9 9<br>a<br>=<br>a<br>a<br>8 8<br>~<br>7 Z 7 ee ee<br>\<br>\<br>6 6 \<br>\<br>\<br>5 5 ~<br>NN<br>»~<br>NX<br>4 4 ~<br>~ ~~ —<br>3 3<br>2 Me 2 HF} et<br>1 1<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
17
Datasheet
2020-04-02
F3L400R10W3S7F_B11
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ZthJH =f (t) IF =f(V F)<br>1 200<br>pot ZthJH : Diode TE Tvj = 25 ° C / /<br>Tvj = 125°C<br>a HE T vj = 150°C ii<br>| Jf<br>| // / 4<br>150 // /<br>| ///<br>| lf<br>| wi<br>//<br>0,1 100 //<br>/ fe//<br>//<br>ft<br>//<br>50 if<br>ii<br>i: 1 2 3 4<br>ri[K/W]: 0,024 0,113 0,216 0,217<br>τ i[s]: 0,000553 0,0128 0,123 0,123<br>y,<br>Po if<br>Dh PeaJ<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br>
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Erec =f il F) Erec =f(R G)<br>RGon =5 Ω ,V CE =500V IF =100A,V CE =500V<br>1,0 1,0<br>Erec, Tvj = 125 ° C; Erec, Tvj = 150 ° C Erec, Tvj = 125 ° C; Erec, Tvj = 150 ° C<br>0,9 0,9<br>0,8 0,8<br>0,7 0,7<br>0,6 0,6<br>0,5 0,5<br>0,4 0,4<br>0,3 0,3<br>0,2 0,2<br>0,1 0,1<br>0,0 0,0<br>0 50 100 150 200 0 10 20 30 40 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
18
Datasheet
2020-04-02
F3L400R10W3S7F_B11
ZthJH
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1 100000<br>SST ee<br>ZthJH : Diode Rtyp<br>SeLET] en animalaee Seel<br>Cnn<br>0,1 10000<br>EEE ee ——<br>ene ee ee ee ee ee<br>HC a<br>0,01 1000<br>tr Ec ern Coo ee ee ee ee<br>i: 1 2 3 4<br>ri[K/W]: 0,0296 0,0904 0,176 0,178<br>τ i[s]: 0,000678 0,0105 0,122 0,122<br>0,001 1 100 os<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
19
Datasheet
2020-04-02
F3L400R10W3S7F_B11
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dimensioned for EJOT Delta PT WN5451 25<br>B choose length according to pcb thickness 4x 0,25 A B C ( 2,3) Dome 3,5 4x pcb hole pattern<br>4x<br>0 ee_110 1 2 2<br>26 DC+ N1 N2 DC-<br>24 NTC1<br>20,817,6 E4 NTC2<br>r+ 14 i y 00000000008 ' (@e@00800000 "g = 14,4 — carcamean i an G4 t ma \<br>K _ S@ 9000(_)9000[088898889 | bo00-~po00(_)oo0c8000 d) \ + = 4,8 | | ee E5 | \!<br>0 a 000 ses s S ess 200 0 —_ - oO 1,60 \ | itl | G5 | | rit | !<br>[AZ J ||l00000000000||essseeeese | 0000000e000)||leoosseoessa]|\ = 4,8 ee 8 S n Me Cx G1 are OS E1 Gis ee ARRREnSSant G6 E6 E3G3 Cy j<br>14<br>20,8 G2<br>26 24 E2 AC1 AC2<br>4 |<br>LU UU<br>109,9 . 0,45<br>C WLU GU<br>Oo A<br>___ WIV T/T<br>. recommended design hight 2 TEVDOUNIDesDOUNNDUONDDee<br>,2)<br>,4)<br>ABC<br>0,25<br>2x<br>0,1 2x 12<br>5,4 2x according to screw head washer<br>0,45<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>29,68 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08<br>0,1<br>12,2 (12) (16,4)<br>**----- End of picture text -----**<br>
20
Datasheet
2020-04-02
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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