# IGBT Module, Three level Inverter, 235 A, 1.61 V, 20 mW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:4048471/)

**URL**: https://novapart.co/products/F3L400R10W3S7B11BPSA1/igbt-module-three-level-inverter-235-a-161-v-20-mw
**SKU**: F3L400R10W3S7B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €100.7100
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK TRENCHSTOP |
| Igbt Technology | IGBT 7 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 20mW |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 235A |
| Collector Emitter Voltage Max | 950V |
| Collector Emitter Saturation Voltage | 1.61V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4048471/)

## F3L400R10W3S7_B11 

**==> picture [117 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCES = 950V<br>IC nom = 400A / ICRM = 800A<br>**----- End of picture text -----**<br>


- 3-Level-Applikationen 

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- Trenchstop[TM] 

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   - 3-level-applications 

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   - • Trenchstop[TM] 

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## **Digit** 

Datasheet www.infineon.com 

2020-02-27 

F3L400R10W3S7_B11 

**==> picture [86 x 38] intentionally omitted <==**

|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|235|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,40<br>1,48<br>1,50|1,61|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,90||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||25,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,078||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,07|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,089<br>0,092<br>0,093||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,022<br>0,026<br>0,027||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,27<br>0,34<br>0,36||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,041<br>0,075<br>0,088||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 5800 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||5,00<br>7,05<br>7,50||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 4000 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||4,30<br>7,16<br>8,00||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,224||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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F3L400R10W3S7_B11 

**==> picture [86 x 38] intentionally omitted <==**

|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|380|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,07<br>1,04<br>1,02|1,14|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= 20 V, Tvj= 25°C|VGEth|4,15|4,90|5,65|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||4,10||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||49,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,228||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,07|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,189<br>0,191<br>0,192||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,026<br>0,032<br>0,034||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,76<br>0,92<br>0,94||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,23<br>0,44<br>0,49||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 5200 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||3,10<br>4,00<br>4,30||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 1200 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||24,5<br>35,3<br>37,9||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,200||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|200|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|140|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|400|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,68<br>1,88<br>1,92|1,98|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 3,25 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,45||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||12,6||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,039||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,05|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,086<br>0,095<br>0,096||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,02<br>0,022<br>0,023||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,18<br>0,22<br>0,23||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,032<br>0,089<br>0,112||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 5300 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||5,00<br>6,43<br>6,79||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 6000 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||3,73<br>6,35<br>7,26||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||600||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,340||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



V�3.0 2020-02-27 

Datasheet 

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F3L400R10W3S7_B11 

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## **Diode,�D1�/�D4�/�Diode,�D1�/�D4 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,58|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5300 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||119<br>173<br>189||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5300 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,84<br>11,6<br>14,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5300 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,62<br>4,53||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,460||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



**Diode,�D2�/�D3�/�Diode,�D2�/�D3 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,58|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||154<br>189<br>200||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||6,65<br>14,9<br>20,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,39<br>6,24<br>7,49||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,552||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



V�3.0 2020-02-27 

Datasheet 

5 

F3L400R10W3S7_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�D5-D6�/�Diode,�D5-D6** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,58|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||145<br>189<br>205||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||7,70<br>15,0<br>18,7||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,59<br>5,01<br>6,44||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,490||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,2<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||9,6<br>5,8<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||8,8<br>4,7<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|Schraube-Montagegem.gültigerApplikationsschrift<br>Screw-Mountingaccordingtovalidapplicationnote|M|1,30||1,50|Nm|
|Gewicht<br>Weight||G||78||g|



Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. IGBT- und Dioden-RthJH-Parameter mit einer Wärmeleitpaste λ Paste = 3.3 W/(m·K) gemessen IGBT- and diode- RthJH parameters measured with thermal grease of λ paste = 3.3 W/(m·K) 

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**Ausgangskennlinie�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
300 300<br>T T vj vj  = 25°C  = 125 ° C V V GE GE  = 19V  = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE =   9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 0,5 1,0 1,5 2,0 0,0 1,0 2,0 3,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,�T1�/�T4�(typisch) transfer�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
300<br>T T vj vj  = 25°C  = 125 ° C<br>Tvj = 150°C<br>250<br>200<br>150<br>100<br>50<br>0<br>4 5 6 7 8<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Schaltverluste�IGBT,�T1�/�T4�(typisch) switching�losses�IGBT,�T1�/�T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�3,9� Ω ,�RGoff�=�3,9� Ω ,�VCE�=�500�V 

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**----- Start of picture text -----**<br>
18<br>E E on on , T , T vj vj  = 125°C  = 150 ° C<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>15<br>12<br>9<br>6<br>3<br>0<br>0 50 100 150 200 250 300<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =150A,V CE =500V VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V,T vj =150°C<br>30 10<br>E E on on , T , T vj vj  = 125°C  = 150 ° C 4 Y Z ———————i ttdon r eeee ee<br>Eoff, Tvj = 125°C 4 | t doff a es<br>Eoff, Tvj = 150°C “4 t f<br>25<br>1<br>20 a ee ee<br>15 0,1<br>ee ee<br>10 in ee —_e ———_—<br>0,01<br>Toe<br>5<br>0 0,001<br>0 10 20 30 40 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE =500V,T vj = 150°C<br>10 a a a a 1 a ee<br>tdon ZthJH : IGBT<br>——| t r a HEHee| eeeeee<br>t doff<br>t f<br>1 0,1<br>eee fe<br>a eeA<br>0,1 0,01<br>Z<br>a<br>Zz<br>7<br>i: 1 2 3 4<br>ri[K/W]: 0,0046 0,0214 0,099 0,099<br>τ i[s]: 0,00058 0,00991 0,146 0,146<br>0,01 0,001<br>0 10 20 30 40 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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IC =f(V CE) C=f(V CE)<br>VGE =415V,R Goff =3,9 Ω ,T vj =150°C VGE =0V,T vj = 25°C,f = 100kHz<br>900 1000<br>I C , Modul 1 | C ies a a<br>IC, Chip Coes<br>800 E_ (a C res<br>100<br>700<br>600 10 Pfft<br>ett iT<br>500<br>400 Hn a ee ee<br>1 =e~~<br>300 \ Poe<br>A<br>N.<br>200<br>0,1<br>100 ee —————————<br>0 0,01<br>PERERA) =  EERE<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>VCE  [V] VCE [V]<br>Gateladungs Charakteristik IGBT, T1 / T4 (typisch) Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>gate charge characteristic IGBT, T1 / T4 (typical) output characteristic IGBT, T2 / T3 (typical)<br>VGE = f(Q G) IC =f(V CE)<br>IC =400A,T vj =25°C VGE =15V<br>15 300<br>VCC =  600 V T T vj vj  = 25°C  = 125 ° C<br>Tvj = 150°C<br>10 250<br>|<br>5 200<br>/<br>0 150 //<br>i]<br>-5 100<br>I<br>-10 50<br>yf<br>-15 0<br>0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 0,0 0,5 1,0 1,5<br>QG [µC] VCE [V]<br> [A]<br>IC C [nF]<br> [V]<br> [A]<br>VGE IC<br>**----- End of picture text -----**<br>


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IC =f(V CE) IC =f(V GE)<br>Tvj = 150°C VCE =20V<br>300 300<br>V V GE GE  = 19V  = 17V HF | T T vj vj  = 25°C  = 125 ° C i!<br>VGE = 15V Tvj = 150°C<br>VGE = 13V<br>250 VGE = 11V 250<br>VGE =   9V ifai| ij<br>ef i |<br>ty | 1<br>t/j i]<br>200 jitHical : 200 |I I |<br>fli/ : ii |<br>150 150 i]<br>fi; 1 |<br>al / /<br>hi i |<br>A !<br>100 f yf 100 /<br>/]<br>y if/<br>/<br>i /<br>50 f 50 /<br>/ [/]<br>//<br>“ /<br>0 0<br>0,0 0,5 1,0 1,5 4,0 5,0 6,0 7,0 8,0<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V VGE =+15V,1 C =150A,V CE =500V<br>60 50<br>E E on on , T , T vj vj  = 125°C  = 150 ° C EEonon, T, Tvjvj = 125°C = 150°C<br>Eoff, Tvj = 125°C E off , T vj  = 125°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>50<br>ro “aw ae a oo 40 Ee |<br>oe 7 ee A Se Ee<br>“ue<br>“ vw ee<br>o “<br>40 “oY<br>“oy<br>ey 30<br>“ / =<br>“ff a<br>“7 a<br>30 r/7 L =~<br>oy a<br>oe a“<br>errar 20 a Zz<br>A z<br>20 af ,<br>af Zz<br>“7 Z<br>yf 10 17<br>10 7<br>_ Ya<br>= G<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IC [A] RG [ Ω ]<br> [A]  [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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tdon =f(l),t=f(l)t C r C doff =f(l),t C f =f(l C) tdon =f{(R)t=f(R),t G r G doff =f(R),t=f(R G f G)<br>VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V,T vj =150°C VGE =+15V,1 C =300A,V CE =500V,T vj =150°C<br>100 EE———— tdon 10 oe tdon<br>t r t r<br>t doff t doff<br>t f t f<br>= 2<br>10<br>sana nnaaanal<br>a 1<br>\<br>a —————<br>. ~~, rrr|<br>1 Te a<br>0,1 =—<br>————————————_— To<br>0,1 ee<br>Za<br>0,01 0,01<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IC [A] RG [ Ω ]<br>Transienter Warmewiderstand IGBT, T2 / T3 Sicherer Riickwarts-Arbeitsbereich IGBT, T2 / T3 (RBSOA)<br>transient thermal impedance IGBT, T2 / T3 reverse bias safe operating area IGBT, T2 / T3 (RBSOA)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =3,9 Ω ,T vj =150°C<br>1 a eeee ee 900<br>ZthJH : IGBT I C , Modul<br>eee IC, Chip<br>PoHES| ee 800 =] TT]<br>TT -<br>700 |<br>|<br>0,1 600<br>eee rie imemeatiimemeeat<br>PN oe 500<br>400<br>0,01 300<br>200<br>i: 1 2 3 4<br>ri[K/W]: 0,0044 0,0191 0,0882 0,0883 100<br>τ i[s]: 0,00058 0,00991 0,146 0,146<br>0,001 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800 900 1000<br>t [s] VCE  [V]<br>t [µs] t [µs]<br> [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


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## **Kapazitäts�Charakteristik�IGBT,�T2�/�T3�(typisch) capacity�characteristic�IGBT,�T2�/�T3�(typical)** 

**Gateladungs�Charakteristik�IGBT,�T2�/�T3�(typisch) gate�charge�characteristic�IGBT,�T2�/�T3�(typical)** VGE�=�f(QG) IC�=�400�A,�Tvj�=�25°C 

C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�100kHz 

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**----- Start of picture text -----**<br>
1000 15<br>C ies VCC =  600 V<br>Coes<br>C res<br>10<br>100<br>5<br>10<br>0<br>1<br>-5<br>0,1<br>-10<br>0,01 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] QG [µC]<br>Ausgangskennlinie�IGBT,�T5�/�T6�(typisch) Ausgangskennlinienfeld�IGBT,�T5�/�T6�(typisch)<br>output�characteristic�IGBT,�T5�/�T6�(typical) output�characteristic�IGBT,�T5�/�T6�(typical)<br>C�=�f�(VCE)�=�f�(VCE)CE)) IC�=�f�(VCE)<br>GE�=�15�V�=�15�V Tvj�=�150°C<br>300 300<br>T T vj vj  = 25°C  = 125 ° C V V GE GE  = 19V  = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE =   9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 1,0 2,0 3,0 0,0 1,0 2,0 3,0 4,0<br>VCE [V] VCE [V]<br> [V]<br>GE<br>C [nF] V<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Ausgangskennlinie�IGBT,�T5�/�T6�(typisch) output�characteristic�IGBT,�T5�/�T6�(typical)** IC�=�f�(VCE)�=�f�(VCE)CE)) VGE�=�15�V�=�15�V 

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**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =39 Ω ,R Goff +=39 Ω ,V CE =500V<br>300 15<br>T T vj vj  = 25°C  = 125 ° C EEonon, T, Tvjvj = 125°C = 150°C<br>Tvj = 150°C E off , T vj  = 125°C<br>Eoff, Tvj = 150°C<br>250<br>12<br>fi ao<br>200<br>9<br>150<br>f ee fl<br>if Lf<br>6<br>100<br>i Poa<br>ai 3 +<br>ff wf,<br>50<br>a<br>0 0<br>4 5 6 7 8 9 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =150A,V CE =500V VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V,T vj =150°C<br>30 10 a a<br>E E on on , T , T vj vj  = 125°C  = 150 ° C ttdon r<br>Eoff, Tvj = 125°C t doff<br>25 Eoff, Tvj = 150°C ‘ t f<br>Z<br>FZ<br>Fm<br>A<br>a,<br>20 Oo 1<br>7<br>ww<br>15<br>sO nn ie<br>J Z A<br>10 0,1<br>Va y, wee Le \<br>5<br>|<br>0 0,01<br>0 10 20 30 40 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE =500V,T vj = 150°C<br>1 1<br>tdon ZthJH : IGBT<br>ee Se<br>tr<br>tdoff<br>tf<br>= ee fereesti etmcet ft oeetectil eee<br>a<br>wetvee nl<br><an eZ<br>| 0,1 Se TL<br>SE eo<br>nL<br>iP /. ne<br>0,1<br>- 0,01 VA<br>7 SS<br>/ ee<br>i: 1 2 3 4<br>ri[K/W]: 0,0075 0,0325 0,15 0,15<br>τ i[s]: 0,00058 0,00991 0,146 0,146<br>0,01 tee 0,001 UN TT VT<br>0 10 20 30 40 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T5 / T6 (RBSOA) Kapazitats Charakteristik IGBT, T5 / T6 (typisch)<br>reverse bias safe operating area IGBT, T5 / T6 (RBSOA) capacity characteristic IGBT, T5 / T6 (typical)<br>IC =f(V CE) C=f(V CE)<br>VGE NS V.R Goff =3,9 Ω ,T vj =150°C VGE OO V.T vj = 25°C, f = 100kHz<br>500 100<br>IC, Modul Cies<br>IC, Chip C oes<br>C res<br>400<br>Lp | | | tT<br>10 aee eee<br>300<br>SSSceacae=<br>1<br>Ree<br>(i<br>PS<br>200 a<br>0,1 \<br>rere<br>100<br>0 0,01<br>0 PERE 100 200 300 400 500 600 700 800 900 1000 0 eeePPPEPESSS= 10 20 30 oe 40 oe 50 ee 60 ooo 70 80 90 100<br>VCE  [V] VCE [V]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>


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VGE = f(Q G) IF =f(V F)<br>IC =200A,T vj =25°C<br>15 300<br>VCC = 600 V T T vj vj  = 25°C  = 125 ° C<br>Tvj = 150°C<br>10 250<br>i1<br>i<br>5 200 it<br>itI<br>‘i<br>i!/<br>0 150 fi<br>I!i<br>ii<br>it<br>-5 / 100 (i 7<br>fi<br>ff<br>e/<br>-10 50 “ul<br>af<br>YY<br>“we<br>rs<br>-15 0 iad<br>0,0 0,1 0,2 0,3 0,4 0,5 0,0 1,0 2,0 3,0 4,0<br>QG [µC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>


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Erec =f il F) Erec =f(R G)<br>RGon =3,9 Ω ,V CE =500V IF =150A,V CE =500V<br>8 6<br>EErecrec, T, Tvjvj = 125°C = 150°C E E rec rec , T , T vj vj  = 125°C  = 150 ° C<br>a<br>a“<br>6 oO - \ |<br>4<br>ne 7 \\<br>7 7 \<br>‘<br>7 [r]<br>4 L [7] ~Q<br>/ ~~<br>vo 77 2 _—< ~~ >~{ TS<br>7<br>}<br>2<br>|<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJH =f (t) IF =f(V F)<br>1 300<br>ST ZthJH : Diode Tvj = 25°C°<br>Tvj = 125 C<br>ea] UE Tvj = 150°C<br>250<br>oe th i<br>PE Teri ETT i<br>u<br>0,1 va 200 i!<br>Pt i!<br>/<br>Patiilignmaiitiietmastiitmaail4 i! i!<br>150 fi<br>ii<br>i<br>fi<br>0,01 100<br>SSE f<br>et cl f<br>50<br>ii 0 y,<br>i: 1 2 3 4<br>ri[K/W]: 0,025 0,114 0,16 0,161 af<br>τ i[s]: 0,000563 0,0126 0,103 0,103 ao<br>MTT anné<br>0,001 0<br>0,001 0,01 0,1 1 10 0,0 1,0 2,0 3,0 4,0<br>t [s] VF [V]<br>Schaltverluste Diode, D2 / D3 (typisch) Schaltverluste Diode, D2 / D3 (typisch)<br>switching losses Diode, D2 / D3 (typical) switching losses Diode, D2 / D3 (typical)<br>Erec =f (I F) Erec =f(R G)<br>RGon =3,9 Ω ,V CE =500V IF =150A,V CE =500V<br>12 10<br>E E rec rec , T , T vj vj  = 125°C  = 150 ° C EErecrec, T, Tvjvj = 125°C = 150°C<br>10<br>8<br>L [_]<br>Lo<br>8 al “ | aN “N<br>~<br>6<br>6<br>4<br>4 eee ~™ ~<br>2<br>2<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IF [A] RG [ Ω ]<br> [K/W]thJH  [A]IF<br>Z<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


17 

Datasheet 

2020-02-27 

F3L400R10W3S7_B11 

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ZthJH =f (t) IF =f(V F)<br>1 300<br>Sa ZthJH : Diode Tvj = 25°C°<br>Tvj = 125 C<br>eee Tvj = 150°Cvj = 150°C = 150°C<br>eee ee<br>250<br>eo i<br>PI a TT ETT i<br>0,1 N20i 200 i!uu<br>PTA i fi<br> TA TT i<br>At f<br>W4 150 fi<br>ii<br>i<br>0,01 100<br>SSE fiff<br>“i<br>ii 0 50 vyaa<br>i: 1 2 3 4<br>ri[K/W]: 0,021 0,1 0,215 0,216<br>τ i[s]: 0,0005 0,0114 0,112 0,112 ao<br>AG<br>Dh ae<br>0,001 0<br>0,001 0,01 0,1 1 10 0,0 1,0 2,0 3,0 4,0<br>t [s] VF [V]F [V] [V]<br>Schaltverluste Diode, D5-D6 (typisch) Schaltverluste Diode, D5-D6 (typisch)<br>switching losses Diode, D5-D6 (typical) switching losses Diode, D5-D6 (typical)<br>Erec =f il F) Erec =f(R G)<br>RGon {4 Ω ,V CE =500V IF = 180A, V CE = 500 V<br>15 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>/ |<br>12<br>6 \<br>SS<br>9<br>4<br>6<br>2<br>3 easia _“N 3<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IF [A] RG [ Ω ]<br> [K/W]thJH  [A]IFF<br>Z<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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300<br>Tvj = 25°C° Tvj = 125 vj = 25°C° vj = 125  = 25°C°  = 125 ° C<br>Tvj = 150°Cvj = 150°C = 150°C<br>250<br>i<br>i<br>200 i!uu<br>i fi<br>i<br>f<br>150 fi<br>ii<br>i<br>100<br>fiff<br>“i<br>50<br>vyaa<br>ao<br>AG<br>ae<br>0<br>0,0 1,0 2,0 3,0 4,0<br>VF [V]F [V] [V]<br>IF [A]IFF<br>**----- End of picture text -----**<br>


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F3L400R10W3S7_B11 

ZthJH 

NTC) 

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1 TTI 7. 7ITTI) 7 |)  °&| | 11D 100000<br>ZthJH : Diode<br>fe po<br>Poae aee ee<br>PIE Dall 10000<br>At TTT Tl N<br>0,1 UATESSS UI | SSNN<br>A eeoeee ~~<br>PYTT<br>PZT TTP 1000 PN<br>ee<br>a a ee<br>0,01 po<br>Pt 100 pS<br>Seimei a a a ee<br>| aSSa<br>i: 1 2 3 4<br>ri[K/W]: 0,029 0,121 0,17 0,17<br>τ i[s]: 0,000563 0,0126 0,103 0,103<br>0,001 10<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


19 

Datasheet 

2020-02-27 

F3L400R10W3S7_B11 

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dimensioned for  EJOT Delta PT WN5451 25<br>B choose length according to pcb thickness 4x 0,25 A B C ( 2,3) Dome 3,5 4x pcb hole pattern<br>4x<br>= (e111 1 & 2<br>26 DC+ N N DC-<br>24 NTC1<br>\ \ > 00000000088 | @808800000 8| s = 20,817,6  OR E4 NTC2 > \<br>| 14 L A & || |Iesss l929 9 900@Q )ec09090|eq | pojo oe d0sG)so000e0 o)| 000 | \S)5 ) . o 14,4 I i eeemri pt irr G4 j \i<br>r y 8 88See0san n | S ossen0sooa| — | = \ ! Peri di}titta | |<br>0 0<br>pe, possecs o c t e | pobs cee e cs e NL pH 4,88 C1 G1 pe E1 G5 E5 G6 E6 C2 E3G3 |<br>14<br>4+ fe llle e gess eooco @) | bitit Gf fi iid /<br>20,8 G2<br>26 24 E2 AC AC<br>4 |<br>109,9 0,45<br>C HEEL SOU<br>O A<br>___ WIV zy T\ T/T<br>recommended design hight<br>,2)<br>,4)<br>ABC<br>0,25<br>2x<br>0,1 2x 12<br>5,4 2x  according to screw head washer<br>0,45<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>29,68 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 36,08<br>0,1<br>12,2 (12) (16,4)<br>**----- End of picture text -----**<br>


20 

Datasheet 

2020-02-27 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/F3L400R10W3S7B11BPSA1/igbt-module-three-level-inverter-235-a-161-v-20-mw)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/f3l400r10w3s7b11bpsa1/igbt-module-1-4v-235a-0-02w-module/dp/4048471)
---

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