# IGBT Module, Three level Inverter, 235 A, 1.71 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:4680802/)

**URL**: https://novapart.co/products/F3L340R12W3H7H11BPSA1/igbt-module-three-level-inverter-235-a-171-v-175-c
**SKU**: F3L340R12W3H7H11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €93.6900
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK Series |
| Igbt Technology | IGBT7 [Trench Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 235A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.71V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4680802/)

**F3L340R12W3H7_H11** 

**EasyPACK[™] module** 

## **Final datasheet** 

## **EasyPACK[™] module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode and PressFIT / NTC** 

## **Features** 

- Electrical features 

- VCES = 1200 V 

- IC nom = 340 A / ICRM = 680 A 

- Ultra fast IGBT chips 

- Low inductive design 

- Low switching losses 

- Low V CE,sat 

- Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder 

- Mechanical features 

- 3.2 kV AC 1 minute insulation 

- Al2O3 substrate with low thermal resistance 

- High current pin 

- PressFIT contact technology 

- Rugged mounting due to integrated mounting clamps 

## **Potential applications** 

- Three-level applications 

- Solar applications 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 

## **Description** 

Please read the sections "Important notice" and "Warnings" at the end of this document 

Datasheet www.infineon.com 

Revision 1.00 2024-12-04 

**F3L340R12W3H7_H11 EasyPACK[™] module** 

**Table of contents** 

**==> picture [105 x 47] intentionally omitted <==**

## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**3**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6|
|**5**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7|
|**6**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8|
|**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9|
|**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20|
|**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21|
|**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24|



Datasheet 

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## **1  Package** 

## **1 Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|||
|---|---|---|---|---|---|---|
|**Table 1**<br>**Insulation coordination**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**|
|Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.2|kV|
|Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.2|kV|
|Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3||
|Comparative tracking<br>index|_CTI_||||> 400||
|Relative thermal index<br>(electrical)|_RTI_||||140|°C|



**Table 2 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Stray inductance module|_L_sCE||||18||nH|
|Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TH= 25 °C, per switch|||1.4||mΩ|
|Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH= 25 °C, per switch|||1.2||mΩ|
|Storage temperature|_T_stg|||-40||125|°C|
|Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm|
|Weight|_G_||||78||g|



_**Note** : The current under continuous operation is limited to 50 A rms per connector pin._ 

## **2 IGBT, T1 / T4** 

|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|
|---|---|---|---|---|---|
|**Table 3**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V|
|Implemented collector<br>current|_I_CN|||340|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|225|A|
|Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||680|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



Datasheet 

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## **2  IGBT, T1 / T4** 

## **Characteristic values** 

|||||||||
|---|---|---|---|---|---|---|---|
|**Table 4**<br>**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 340 A,_V_GE= 15 V|_T_vj= 25 °C||1.71|2.25|V|
||||_T_vj= 125 °C||1.91|||
||||_T_vj= 175 °C||2.00|||
|Gate threshold voltage|_V_GEth|_I_C= 5.44 mA, VCE= VGE,_T_vj= 25 °C||4.85|5.5|6.15|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||5.01||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||2.5||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||38.6||nF|
|Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.608||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||22|µA|
|Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 340 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 0.11 Ω|_T_vj= 25 °C||0.327||µs|
||||_T_vj= 125 °C||0.366|||
||||_T_vj= 175 °C||0.388|||
|Rise time (inductive load)|_t_r|_I_C= 340 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 0.11 Ω|_T_vj= 25 °C||0.026||µs|
||||_T_vj= 125 °C||0.032|||
||||_T_vj= 175 °C||0.035|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 340 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 2.4 Ω|_T_vj= 25 °C||0.510||µs|
||||_T_vj= 125 °C||0.570|||
||||_T_vj= 175 °C||0.600|||
|Fall time (inductive load)|_t_f|_I_C= 340 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 2.4 Ω|_T_vj= 25 °C||0.046||µs|
||||_T_vj= 125 °C||0.096|||
||||_T_vj= 175 °C||0.121|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 340 A,_V_CC= 500 V,<br>_L_σ= 9 nH,_V_GE= ±15 V,<br>_R_Gon= 0.11 Ω, di/dt =<br>9450 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||11.1||mJ|
||||_T_vj= 125 °C||13.5|||
||||_T_vj= 175 °C||15.4|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 340 A,_V_CC= 500 V,<br>_L_σ= 9 nH,_V_GE= ±15 V,<br>_R_Gof= 2.4 Ω, dv/dt =<br>8080 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||7.9||mJ|
||||_T_vj= 125 °C||12.7|||
||||_T_vj= 175 °C||15.3|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m·K)|||0.242||K/W|
|**(table continues...)**||||||||



Datasheet 

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**F3L340R12W3H7_H11 EasyPACK[™] module** 

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## **3  IGBT, T2 / T3** 

|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Temperature under<br>switching conditions|_T_vj op||-40||175|°C|



_**Note** : Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ 

## **3 IGBT, T2 / T3** 

|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|
|---|---|---|---|---|---|
|**Table 5**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V|
|Implemented collector<br>current|_I_CN|||340|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|235|A|
|Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||680|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



## **Table 6 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 340 A,_V_GE= 15 V|_T_vj= 25 °C||1.71|2.25|V|
||||_T_vj= 125 °C||1.91|||
||||_T_vj= 175 °C||2.00|||
|Gate threshold voltage|_V_GEth|_I_C= 5.44 mA, VCE= VGE,_T_vj= 25 °C||4.85|5.5|6.15|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||5.01||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||2.5||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||38.6||nF|
|Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.608||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||23|µA|
|Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA|



**(table continues...)** 

Datasheet 

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**F3L340R12W3H7_H11 EasyPACK[™] module** 

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## **4  Diode, D1 / D4** 

|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 340 A,_V_CC= 500 V,<br>_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.370||µs|
||||_T_vj= 125 °C||0.410|||
||||_T_vj= 175 °C||0.430|||
|Rise time (inductive load)|_t_r|_I_C= 340 A,_V_CC= 500 V,<br>_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.036||µs|
||||_T_vj= 125 °C||0.041|||
||||_T_vj= 175 °C||0.045|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 340 A,_V_CC= 500 V,<br>_R_Gof= 9.1 Ω|_T_vj= 25 °C||1.080||µs|
||||_T_vj= 125 °C||1.150|||
||||_T_vj= 175 °C||1.200|||
|Fall time (inductive load)|_t_f|_I_C= 340 A,_V_CC= 500 V,<br>_R_Gof= 9.1 Ω|_T_vj= 25 °C||0.025||µs|
||||_T_vj= 125 °C||0.062|||
||||_T_vj= 175 °C||0.096|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 340 A,_V_CC= 500 V,<br>_L_σ= 9 nH,_R_Gon= 0.47 Ω,<br>di/dt = 7100 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||11.7||mJ|
||||_T_vj= 125 °C||12.5|||
||||_T_vj= 175 °C||13.8|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 340 A,_V_CC= 500 V,<br>_L_σ= 9 nH,_R_Gof= 9.1 Ω,<br>dv/dt = 5700 V/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||10.5||mJ|
||||_T_vj= 125 °C||14.3|||
||||_T_vj= 175 °C||17|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m·K)|||0.225||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||175|°C|



_**Note** : Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ 

## **4** 

## **Diode, D1 / D4** 

**Table 7 Maximum rated values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**|
|---|---|---|---|---|---|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V|
|Implemented forward<br>current|_I_FN|||400|A|
|**(table continues...)**||||||



Datasheet 

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## **5  Diode, D2 / D3** 

|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||800|A|
|I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|5700|A²s|
||||_T_vj= 175 °C|5050||



## **Table 8 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 400 A,_V_GE= 0 V|_T_vj= 25 °C||2.50|3.05|V|
||||_T_vj= 125 °C||2.18|||
||||_T_vj= 175 °C||1.98|||
|Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 400 A,<br>_V_GE= -15 V, -diF/dt =<br>7100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||185||A|
||||_T_vj= 125 °C||290|||
||||_T_vj= 175 °C||340|||
|Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 400 A,<br>_V_GE= -15 V, -diF/dt =<br>7100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||11.5||µC|
||||_T_vj= 125 °C||25.8|||
||||_T_vj= 175 °C||35.5|||
|Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 400 A,<br>_V_GE= -15 V, -diF/dt =<br>7100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||3.3||mJ|
||||_T_vj= 125 °C||7.89|||
||||_T_vj= 175 °C||11.4|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)|||0.293||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||175|°C|



_**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ 

## **5 Diode, D2 / D3** 

**Table 9 Maximum rated values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**|
|---|---|---|---|---|---|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V|
|Implemented forward<br>current|_I_FN|||300|A|



**(table continues...)** 

Datasheet 

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## **6  Diode, D5 / D6** 

|**Table 9**<br>**(continued) Maximum rated values**|**Table 9**<br>**(continued) Maximum rated values**|**Table 9**<br>**(continued) Maximum rated values**||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Continuous DC forward<br>current|_I_F|||250|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||500|A|
|I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|9240|A²s|
||||_T_vj= 175 °C|8070||



**Table 10 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 250 A,_V_GE= 0 V|_T_vj= 25 °C||1.62|1.93|V|
||||_T_vj= 125 °C||1.50|||
||||_T_vj= 175 °C||1.42|||
|Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 250 A,<br>_V_GE= -15 V, -diF/dt =<br>7100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||195||A|
||||_T_vj= 125 °C||265|||
||||_T_vj= 175 °C||307|||
|Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 250 A,<br>_V_GE= -15 V, -diF/dt =<br>7100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||17.5||µC|
||||_T_vj= 125 °C||34.7|||
||||_T_vj= 175 °C||46.1|||
|Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 250 A,<br>_V_GE= -15 V, -diF/dt =<br>7100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||5.2||mJ|
||||_T_vj= 125 °C||11.6|||
||||_T_vj= 175 °C||15.7|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)|||0.298||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||175|°C|



_**Note** :_ 

_Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ 

## **6** 

## **Diode, D5 / D6** 

**Table 11 Maximum rated values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**|
|---|---|---|---|---|---|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V|
|**(table continues...)**||||||



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## **7  NTC-Thermistor** 

|**Table 11**<br>**(continued) Maximum rated values**|**Table 11**<br>**(continued) Maximum rated values**|**Table 11**<br>**(continued) Maximum rated values**||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Implemented forward<br>current|_I_FN|||300|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A|
|I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|3850|A²s|
||||_T_vj= 175 °C|3300||



|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 300 A,_V_GE= 0 V|_T_vj= 25 °C||2.50|3.05|V|
||||_T_vj= 125 °C||2.18|||
||||_T_vj= 175 °C||1.98|||
|Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>9450 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||182||A|
||||_T_vj= 125 °C||276|||
||||_T_vj= 175 °C||329|||
|Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>9450 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||9||µC|
||||_T_vj= 125 °C||20|||
||||_T_vj= 175 °C||28|||
|Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>9450 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||2.62||mJ|
||||_T_vj= 125 °C||6.41|||
||||_T_vj= 175 °C||9.33|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)|||0.606||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||175|°C|



_**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ 

## **7 NTC-Thermistor** 

**Table 13 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ|
|**(table continues...)**|||||||



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## **7  NTC-Thermistor** 

|**Table 13**<br>**(continued) Characteristic values**|**Table 13**<br>**(continued) Characteristic values**|**Table 13**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%|
|Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW|
|B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K|
|B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K|
|B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K|



_**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4_ 

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## **8  Characteristics diagrams** 

## **8 Characteristics diagrams** 

**Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) VGE = 15 V 

**Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) T = 175 °C vj 

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**----- Start of picture text -----**<br>
680 680<br>612 612<br>544 544<br>476 476<br>408 408<br>340 340<br>272 272<br>204 204<br>136 136<br>68 68<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>Transfer characteristic (typical), IGBT, T1 / T4 Gate charge characteristic (typical), IGBT, T1 / T4<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 340 A, Tvj = 25 °C<br>680 15<br>612<br>10<br>544<br>476<br>5<br>408<br>340 0<br>272<br>-5<br>204<br>136<br>-10<br>68<br>0 -15<br>5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 1 2 3 4 5 6<br>**----- End of picture text -----**<br>


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**8  Characteristics diagrams** 

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## **Capacity characteristic (typical), IGBT, T1 / T4** 

## C = f(VCE) 

f = 100 kHz, VGE = 0 V, Tvj = 25 °C 

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## **Switching times (typical), IGBT, T1 / T4** 

## t = f(RG) 

VGE = ±15 V, IC = 340 A, VCC = 500 V, Tvj = 175 °C 

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## **Switching times (typical), IGBT, T1 / T4** 

## t = f(IC) 

RGoff = 2.4 Ω, RGon = 0.11 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 175 °C 

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## **Switching losses (typical), IGBT, T1 / T4** E = f(IC) 

RGoff = 2.4 Ω, RGon = 0.11 Ω, VCC = 500 V, ± 15 V 

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**8  Characteristics diagrams** 

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## **Switching losses (typical), IGBT, T1 / T4** 

E = f(RG) 

## IC = 340 A, VCC = 500 V, ± 15 V 

**Reverse bias safe operating area (RBSOA), IGBT, T1 / T4** 

IC = f(VCE) 

RGoff = 2.4 Ω, VGE = ±15 V, Tvj = 175 °C 

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**Transient thermal impedance, IGBT, T1 / T4** Zth = f(t) 

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**Output characteristic (typical), IGBT, T2 / T3** IC = f(VCE) VGE = 15 V 

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680<br>612<br>544<br>476<br>408<br>340<br>272<br>204<br>136<br>68<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br>


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## **8  Characteristics diagrams** 

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Output characteristic field (typical), IGBT, T2 / T3 Transfer characteristic (typical), IGBT, T2 / T3<br>IC = f(VCE) IC = f(VGE)<br>Tvj = 175 °C VCE = 20 V<br>680 680<br>612 612<br>544 544<br>476 476<br>408 408<br>340 340<br>272 272<br>204 204<br>136 136<br>68 68<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>Gate charge characteristic (typical), IGBT, T2 / T3 Capacity characteristic (typical), IGBT, T2 / T3<br>VGE = f(QG) C = f(VCE)<br>IC = 340 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C<br>15 100<br>10<br>5 10<br>0<br>-5 1<br>-10<br>-15 0.1<br>0 1 2 3 4 5 6 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


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## **8  Characteristics diagrams** 

## **Switching times (typical), IGBT, T2 / T3** 

## t = f(IC) 

RGoff = 9.1 Ω, RGon = 0.47 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 175 °C 

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## **Switching losses (typical), IGBT, T2 / T3** 

E = f(IC) 

RGoff = 9.1 Ω, RGon = 0.47 Ω, VCC = 500 V, ± 15 V 

## **Switching times (typical), IGBT, T2 / T3** 

t = f(RG) 

VGE = ±15 V, IC = 340 A, VCC = 500 V, Tvj = 175 °C 

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## **Switching losses (typical), IGBT, T2 / T3** 

E = f(RG) 

IC = 340 A, VCC = 500 V, ± 15 V 

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40 55<br>50<br>35<br>45<br>30<br>40<br>25 35<br>30<br>20<br>25<br>15 20<br>15<br>10<br>10<br>5<br>5<br>0 0<br>0 85 170 255 340 425 510 595 680 0 1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br>


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## **8  Characteristics diagrams** 

**Reverse bias safe operating area (RBSOA), IGBT, T2 / Transient thermal impedance, IGBT, T2 / T3 T3** Zth = f(t) 

IC = f(VCE) RGoff = 9.1 Ω, VGE = ±15 V, Tvj = 175 °C 

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850<br>765<br>680<br>595<br>510<br>425<br>340<br>255<br>170<br>85<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br>


**Forward characteristic (typical), Diode, D1 / D4** IF = f(VF) 

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800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br>


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**Switching losses (typical), Diode, D1 / D4** Erec = f(IF) RGon = 0.47 Ω, VCC = 500 V 

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## **8  Characteristics diagrams** 

## **Switching losses (typical), Diode, D1 / D4** 

Erec = f(RG) 

## **Transient thermal impedance, Diode, D1 / D4** 

Zth = f(t) 

IF = 400 A, VCC = 500 V 

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**Forward characteristic (typical), Diode, D2 / D3** IF = f(VF) 

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**Switching losses (typical), Diode, D2 / D3** Erec = f(IF) 

RGon = 0.47 Ω, VCC = 500 V 

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500 24<br>450<br>21<br>400<br>18<br>350<br>15<br>300<br>250 12<br>200<br>9<br>150<br>6<br>100<br>3<br>50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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## **8  Characteristics diagrams** 

## **Switching losses (typical), Diode, D2 / D3** 

Erec = f(RG) IF = 250 A, VCC = 500 V 

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**Forward characteristic (typical), Diode, D5 / D6** IF = f(VF) 

**Transient thermal impedance, Diode, D2 / D3** Zth = f(t) 

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**Switching losses (typical), Diode, D5 / D6** Erec = f(IF) RGon = 0.11 Ω, VCC = 500 V 

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600 12<br>11<br>500 10<br>9<br>400 8<br>7<br>300 6<br>5<br>200 4<br>3<br>100 2<br>1<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 300 400 500 600<br>**----- End of picture text -----**<br>


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## **8  Characteristics diagrams** 

**Switching losses (typical), Diode, D5 / D6 Transient thermal impedance, Diode, D5 / D6** Erec = f(RG) Zth = f(t) IF = 300 A, VCC = 500 V 

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10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>**----- End of picture text -----**<br>


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## **Temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) 

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## **9  Circuit diagram** 

## **9 Circuit diagram** 

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**----- Start of picture text -----**<br>
P1<br>T1<br>D1<br>G1<br>HE1<br>X1<br>T2<br>D2<br>D5<br>G2<br>X7<br>X5  HE2 X2<br>X6 J NTC<br>X3<br>T3<br>X8<br>D6 D3<br>G3<br>HE3<br>X4<br>T4<br>D4<br>G4<br>HE4<br>N1<br>**----- End of picture text -----**<br>


**Figure 1** 

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**10  Package outlines** 

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## **10 Package outlines** 

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**----- Start of picture text -----**<br>
4x<br>Dimensioned for self tapping screw  n 2,5mm<br>choose length according to PCB thickness<br>max. screw-in depth 8,5mm<br>( n 4,2) 2x dimensioned for M5 screw (2x )12<br>2x<br>Height of module mounting area<br>from heatsink, in delivery condition:<br>4mm<br>14<br>0<br>14<br>(99,3 ` 0,1) Distance of threaded holes in heat sink<br>110  ` 0,45<br>module labeling 8x40<br>recommended pcb design height<br>pcb hole pattern<br>4x  n 3,5 ( optional hole for self tapping screw  n 2,5mm)<br>(26) HE2 X2 X3<br>24<br>20,8<br>17,6 G2<br>14,4<br>HE3<br>4,8<br>G3 X4 X7 X8<br>0<br>X1 HE1<br>4,8<br>8<br>11,2 G1<br>14,4<br>17,6 G4<br>20,8<br>24<br>(26) P1 X5 X6 HE4 N1<br>- Details about hole specification for contacts refer to AN2023-07 chapter 2<br>- Tolerance of PCB hole pattern  j n 0,1<br>12<br>n<br>0,45 12 )20<br>62  ` (2x ) (2x<br>3,4)<br>n (<br>47,43 0 47,43<br>0,1<br> ` (12)<br>12,2 (16,4)<br>2x  according to screw head washer to mount module to heat sink<br>49,68 (44,43) 32,88 29,68 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08 (44,43) 49,68<br>W00250093.04<br>**----- End of picture text -----**<br>


## **Figure 2** 

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## **11  Module label code** 

## **11 Module label code** 

|**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**|
|---|---|---|---|---|
|Code format|Data Matrix||Barcode Code128||
|Encoding|ASCII text||Code Set A||
|Symbol size|16x16||23 digits||
|Standard|IEC24720 and IEC16022||IEC8859-1||
||||||
|Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30|
|Example|71549142846550549911530<br>71549142846550549911530||||



## **Figure 3** 

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**Revision history** 

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## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document version**|**Date of release**|**Description of changes**|
|0.10|2024-08-09|Initial version|
|1.00|2024-12-04|Final datasheet|



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## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

**Edition 2024-12-04 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** 

With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

**Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABK797-002** Infineon Technologies in customer’s applications. 

## **Warnings** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 



## Links

- [View this product on Novapart](https://novapart.co/products/F3L340R12W3H7H11BPSA1/igbt-module-three-level-inverter-235-a-171-v-175-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/f3l340r12w3h7h11bpsa1/igbt-3-level-inv-1-2kv-235a-module/dp/4680802)
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