# IGBT Module, Three level Inverter, 45 A, 1.85 V, 215 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3514413/)

**URL**: https://novapart.co/products/F3L25R12W1T4B27BOMA1/igbt-module-three-level-inverter-45-a-185-v-215-w
**SKU**: F3L25R12W1T4B27BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €19.5200
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 19Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 215W |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Polarity | Quad N Channel |
| Dc Collector Current | 45A |
| Power Dissipation Pd | 215W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 45A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3514413/)

IGBT-Module IGBT-modules F3L25R12W1T4_B27 

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VCES = 1200V IC nom = 25A / ICRM = 50A 

- 3-Level-Applikationen 

- 

   - 3-Level-Applications 

   - 

- 

- 

- CEsat 

   - 

   - 

   - CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

- 

- 

- Rugged mounting due to integrated mounting clamps 

1 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules F3L25R12W1T4_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**IGBT,�T1�/�T4�/�IGBT,�T1�/�T4 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L25R12W1T4_B27<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:MB<br>dateofpublication:2013-11-25<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>25<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>215<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>td on<br>0,035<br>0,035<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>tr<br>0,014<br>0,018<br>0,019<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>td off<br>0,215<br>0,275<br>0,285<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>tf<br>0,056<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, di/dt = 1600 A/µs (Tvj= 150°C)<br>RGon= 10Ω<br>Eon<br>0,30<br>0,50<br>0,56<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, du/dt = 2500 V/µs (Tvj= 150°C)<br>RGoff= 10Ω<br>Eoff<br>1,00<br>1,40<br>1,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,65<br>0,70<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules F3L25R12W1T4_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�D2�/�D3�/�Diode,�D2�/�D3** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|130<br>115|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,35<br>1,30<br>1,25|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)<br>VR= 350 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||24,0<br>28,0<br>30,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)<br>VR= 350 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,20<br>1,60<br>1,65||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)<br>VR= 350 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,22<br>0,32<br>0,39||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,10|1,20|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,75||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CM approved�by:�MB 

date�of�publication:�2013-11-25 revision:�2.0 

3 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules F3L25R12W1T4_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�T2�/�T3�/�IGBT,�T2�/�T3** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L25R12W1T4_B27<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:MB<br>dateofpublication:2013-11-25<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>150<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>td on<br>0,028<br>0,028<br>0,028<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>tr<br>0,01<br>0,013<br>0,014<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>td off<br>0,22<br>0,235<br>0,24<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>tf<br>0,055<br>0,067<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, di/dt = 2200 A/µs (Tvj= 150°C)<br>RGon= 10Ω<br>Eon<br>0,47<br>0,63<br>0,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 10Ω<br>Eoff<br>0,82<br>1,00<br>1,10<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,90<br>1,00<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,85<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules F3L25R12W1T4_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�D1�/�D4�/�Diode,�D1�/�D4** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>75,0<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 350 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||66,0<br>70,0<br>70,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 350 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,75<br>3,50<br>4,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 350 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,63<br>1,10<br>1,15||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,95|1,05|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0 

5 

## Technische�Information�/�Technical�Information 

## IGBT-Module IGBT-modules F3L25R12W1T4_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

prepared�by:�CM approved�by:�MB 

date�of�publication:�2013-11-25 revision:�2.0 

6 

IGBT-Module IGBT-modules 

## F3L25R12W1T4_B27 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>50 | 50<br>Tvj = 25°C VGE = 19V<br>45 Tvj = 125°C | , a 45 e V s GE = 17V | fo<br>Tvj = 150°C | Vv [tee] ‘ | | VGE = 15V LAA | be<br>VGE = 13V<br>40 ee 40 | VGE = 11V LA<br>e e e ma Ul ra 7<br>VGE = 9V<br>P e PE fe<br>35 35<br>30 30<br>Pp vee e ee<br>25 25<br>PtP ot A Ee<br>Ae ' a / vA‘<br>20 20<br>15 ee ee 15<br>10 10<br>ee ee ee<br>5 5<br>pus LA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT, T1 / T4 (typisch) Schaltverluste IGBT, T1 / T4 (typisch)<br>transfer characteristic IGBT, T1 / T4 (typical) switching losses IGBT, T1 / T4 (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =10 Ω ,R Goff =10 Ω ,V CE =350V<br>50 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>2,5 Eoff, Tvj = 150°C<br>40<br>e e l  Oe a a =<br>Ree ee a<br>35<br>2,0<br>pp F<br>30 Vann<br>alee<br>25 1,5<br>i“ 7<br>Sie<br>20<br>1,0<br>15<br>pt | AE ce aoa<br>i vy “\<br>10<br>ee ‘ aa<br>0,5<br>i Ae Het<br>5<br>0 poe 0,0 eile<br>5 6 7 8 9 10 11 12 13 0 5 10 15 20 25 30 35 40 45 50<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

IGBT-Module IGBT-modules 

## F3L25R12W1T4_B27 

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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =4+15V,1 C =25A,V CE =350V<br>3,0 10 PtTTT<br>Eon, Tvj = 125°C |A ZthJH : IGBT PET coco TT [TTT]<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>2,5 E Eoff, Tvj = 150°C L oli, aooo a ll<br>4 a | el<br>TT L<br>2,0<br>1,5 1<br>rT TTTTT]<br>er’ | PEt ete<br>ea ee en ll<br>1,00,5 lyZyAAry) |] df Pa0Pye LAC) | LOFT<br>i:    1    2    3    4<br>ri[K/W]:   0,078    0,181   0,547   0,544<br>4 τ UN i[s]:    0,0005    TTT 0,005   0,05    EH 0,2<br>0,0 0,1<br>0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T1 / T4 (RBSOA) Durchlasskennlinie der Diode, D2 / D3 (typisch)<br>reverse bias safe operating area IGBT, T1 / T4 (RBSOA) forward characteristic of Diode, D2 / D3 (typical)<br>IC CE) IF F)<br>VGE SVR Goff =10 Ω ,T vj =150°C a<br>55 50<br>IC, Modul Tvj = 25°C<br>50 FeL I C , Chip ET 45 TTvjvj = 125°C = 150°C<br>45 been Fe ee | 40 Rea a a<br>40<br>ee 35 it f<br>35<br>30<br>‘<br>30 pF 7<br>| 25 es —<br>25 ee ee eee EL<br>20 i<br>20<br>Teer], {| typ<br>15<br>15<br>10<br>10<br>5 Fa esee 5 es)<br>| PY a,<br>0 P| | 0 i eae<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

IGBT-Module IGBT-modules 

## F3L25R12W1T4_B27 

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Erec =f(I F) Erec =f(R G)<br>RGon an Ω »,V CE =350V IF my CE = 350 V<br>0,50 0,45<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,45 Erec, Tvj = 150°C 0,40 Erec, Tvj = 150°C<br>0,40<br>TTT T rte 0,35 PRT TT<br>PL T TT<br>0,35 | et per \<br>PE dee“eA 0,30 PAN\IEE<br>0,30 |<br>a INN<br>0,25<br>EEaVaReeee EE EE<br>0,25<br>GF PEAS<br>0,20<br>0,20<br>0,15<br>EEE EE<br>0,15<br>PPCCECEEL 0,10 PEE Ne<br>0,10 A = COOP SNEED<br>0,05 PEOPLE 0,05 COLL EEE<br>0,00 0,00<br>0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D2 / D3 Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>transient thermal impedance Diode, D2 / D3 output characteristic IGBT, T2 / T3 (typical)<br>ZthJH IC CE)<br>VGE<br>10 60<br>| ieee ZthJH: Diode tat ast st aera Tvj —  = 25°C ]<br>Tt ioo T T Tvj = 125°C 7, -<br>Tvj = 150°C<br>TV | e e<br>CE ETE 50 rd s CO PD<br>PI ETE ECT J<br>40<br>NV! SeeT nl are one<br>1 SL IM M «=| 30 Ep ef r=<br>eat(| TetetTT TTT TTT TTT] a / jfeae<br>PeZT ae aae<br>ZLa TE aTEllTTT 20 rT UTUT<br>en a e i:    1    2    3    4    10 i) ae<br>ri[K/W]:   0,344    0,426   0,657   0,423<br>τ Tm i[s]:    0,0005    COMI 0,005   0,05    0,2    1 p e<br>0,1 0 | |<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VCE  [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


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## IGBT-Module IGBT-modules Technische Information F3L25R12W1T4_B27 / Technical Information 

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IC =f(V CE) IC =f(V GE)<br>Tvj = 150°C VCE =20V<br>60 60<br>Mma VGE = 19V : T as vj = 25°C rf<br>VGE = 17V Tvj = 125°C<br>VGE = 15V Ll a Tvj = 150°C te<br>50 VGE = 13V 50<br>PieeyL | ee<br>VGE = 11V<br>VGE = 9V Pee<br>, | berm E t<br>40 , A 40 a<br>PTT T w |Za TE v<br>e eVA ee),<br>pA/ EL<br>30 30<br>ee ee ee<br>7 k<br>20 20<br>aon /27 [c] [k] c [ee] ee<br>10 10<br>a 2 ee ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE  [V] VGE  [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =10 Ω ,R Goff =10 Ω ,V CE =350V VGE =+15V,1 C =30A,V CE =350V<br>2,5 3,0<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>Eoff, Tvj = 125°C Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C 2,5 Eoff, Tvj = 150°C<br>| a | E y<br>2,0 ; WA<br>Yo. a<br>7 a ao 2,0 7 Ae<br>1,5 feof “ aS aearo<br>Yoo oe 1,5 ae<br>aan “<br>1,0<br>ae 1,0 <7<br>0,5 7. a<br>0,5<br>Le<br>0,0 0,0<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90 100<br>IC [A] RG [ Ω ]<br> [A]  [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules F3L25R12W1T4_B27 

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ZthJH =f(t IC =f(V CE)<br>® VGE en BV.R Goff =10 Ω ,T vj =150°C<br>10 70<br>| ZthJH: IGBT | IC, Modul<br>ooo | IC, Chip<br>ee’ PT TT E Tot TTeee eer 60 EJ]— //{.<br>ae aTell<br>50<br>40<br>1 a EEE<br>ee t<br>Pt Treee 30<br>rTPt TTTTTTTT<br>PTP [LE] teeTPIETT EEE ET 20<br>PATH |E {CUCLTE i:    1    PETE 2    3     PT 4    T 10<br>ri[K/W]:   0,142    0,309   0,719   0,58<br>τ i[s]:    0,0005   0,005   0,05    0,2<br>U e orll l «=|<br>0,1 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE  [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = i0 Ω ,V CE =350V<br>50 1,4<br>Tvj = 25°C Erec, Tvj = 125°C<br>45 | Tvj = 125°C J a Erec, Tvj = 150°C cae<br>Tvj = 150°C 1,2<br>40<br>9 L i at<br>35 Pe ae 1,0 x<br>30<br>0,8<br>ee<br>25<br>0,6 Cee<br>20 ee aeee ee<br>15 A) LY<br>0,4<br>10<br>0,2<br>5 NeeT eee<br>Sele} EEE<br>0 0,0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 5 10 15 20 25 30 35 40 45 50<br>VF [V] IF [A]<br> [K/W]thJH  [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules F3L25R12W1T4_B27 

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Erec =f(R G) ZthJH =f(t<br>IF = 28 NV CE = 350 V ®<br>1,4 a 10 rrr<br>Erec, Tvj = 125°C | ZthJH: Diode ee ee |<br>Erec, Tvj = 150°C (TT<br>1,2 Ey a Aa ee e eeee oo<br>a ||el<br>1,0<br>0,8 CATE a<br>“ 1 CAT T<br>ee al<br>0,6 LE ~.. Ce<br>SY ael<br>0,4<br>0,2 SOS Lt LE E TI i:     PPE 1    2    3    4<br>ri[K/W]:   0,15    0,323   0,739   0,588<br> UCSSRSR Oedi late τ i[s]:    0,0005   0,005   0,05    0,2    d<br>EEE Ln eelet<br>0,0 0,1<br>0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>= Rtyp ———<br>pe<br>PFaaot ee | ht [ET] eeee eeee ee<br>10000 SERRE<br>Oe<br>ee ee ee<br>poa Na eeee ee<br>pp NN<br>1000 | | N f E<br>a<br>es eS ee ee<br>a<br>poNN<br>Pot | EE<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules F3L25R12W1T4_B27 

## **Schaltplan�/�circuit_diagram_headline** 

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## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/F3L25R12W1T4B27BOMA1/igbt-module-three-level-inverter-45-a-185-v-215-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/f3l25r12w1t4b27boma1/igbt-module-quad-n-channel-1-2kv/dp/3514413)
---

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