# IGBT Module, Three level Inverter, 100 A, 1.55 V, 600 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726108/)

**URL**: https://novapart.co/products/F3L200R12W2H3B11BPSA1/igbt-module-three-level-inverter-100-a-155-v-600-w
**SKU**: F3L200R12W2H3B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €47.8400
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:600W; Collector Em; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (08-Jul-2021) |
| Product Range | EasyPACK 2B |
| Igbt Technology | IGBT 3 High Speed |
| Igbt Termination | Press Fit |
| Power Dissipation | 600W |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 600W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726108/)

## IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

VCES = 1200V IC nom = 100A / ICRM = 200A 

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**Digit** 

1 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�T1�/�T4�/�IGBT,�T1�/�T4** 

**Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L200R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.1<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>ImplementierterKollektor-Strom<br>Implementedcollectorcurrent<br>ICN<br>200<br>A<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,75<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 7,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,05<br>5,80<br>6,45<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,60<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>11,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,70<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,155<br>0,16<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,32<br>0,40<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,03<br>0,055<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 3700 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>1,20<br>2,00<br>2,25<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 2700 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>3,50<br>5,30<br>5,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,200 0,250 K/W||



|preparedby:CM|dateofpublication:2016-04-04|
|---|---|
|approvedby:AKDA|revision:V3.1|



2 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,200||K/W|
|---|---|---|---|---|---|---|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�D2�/�D3�/�Diode,�D2�/�D3** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|125|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|250|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1450<br>1400|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,70|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3700 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||90,0<br>100<br>100||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 3700 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,25<br>5,90<br>6,40||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3700 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,95<br>1,55<br>1,65||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,550|0,650|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,600||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CM approved�by:�AKDA 

date�of�publication:�2016-04-04 revision:�V3.1 

3 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

**IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L200R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.1<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>250<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,95<br>5,80<br>6,45<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,20<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,19<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,055<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>td off<br>0,25<br>0,27<br>0,28<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>tf<br>0,035<br>0,05<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 3800 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>1,85<br>2,80<br>3,30<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 4600 V/µs (Tvj= 150°C)<br>RGoff= 3,3Ω<br>Eoff<br>3,10<br>4,10<br>4,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>700<br>500<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,500 0,600 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,500<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�D1�/�D4�/�Diode,�D1�/�D4** 

**Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L200R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.1<br>**Diode,D1/D4/Diode,D1/D4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage<br>Tvj= 25°C<br>VRRM<br>1200<br>V<br>Dauergleichstrom<br>ContinuousDCforwardcurrent<br>IF<br>75<br>A<br>PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent<br>tP= 1 ms<br>IFRM<br>150<br>A<br>Grenzlastintegral<br>I²t-value<br>VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C<br>I²t<br>1050<br>985<br>A²s<br>A²s<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Durchlassspannung<br>Forwardvoltage<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>VF<br>1,65<br>1,65<br>1,65<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Rückstromspitze<br>Peakreverserecoverycurrent<br>IF= 75 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>IRM<br>120<br>140<br>150<br>A<br>A<br>A<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Sperrverzögerungsladung<br>Recoveredcharge<br>IF= 75 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Qr<br>8,50<br>17,0<br>19,0<br>µC<br>µC<br>µC<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltenergieproPuls<br>Reverserecoveryenergy<br>IF= 75 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Erec<br>2,85<br>5,70<br>6,30<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proDiode/perdiode<br>RthJC<br>0,550 0,600 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,500<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C<br>**Modul/Module**<br>Isolations-Prüfspannung<br>Isolationtestvoltage<br>RMS, f = 50 Hz, t = 1 min.<br>VISOL<br>3,0<br>kV<br>InnereIsolation<br>Internalisolation<br>Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)<br>Al2O3<br>Kriechstrecke<br>Creepagedistance<br>Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal<br>11,5<br>6,3<br>mm<br>Luftstrecke<br>Clearance<br>Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal<br>10,0<br>5,0<br>mm<br>VergleichszahlderKriechwegbildung<br>Comperativetrackingindex<br>CTI<br>> 200<br>min.<br>typ.<br>max.<br>Modulstreuinduktivität<br>Strayinductancemodule<br>LsCE<br>14<br>nH<br>Lagertemperatur<br>Storagetemperature<br>Tstg<br>-40<br>125<br>°C<br>Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp<br>F<br>40<br>-<br>80<br>N<br>Gewicht<br>Weight<br>G<br>36<br>g<br>Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.<br>The current under continuous operation is limited to 25A rms per connector pin.||



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

|preparedby:CM|dateofpublication:2016-04-04|
|---|---|
|approvedby:AKDA|revision:V3.1|



5 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**||min.|typ.|max.||
|---|---|---|---|---|---|---|
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2016-04-04 approved�by:�AKDA revision:�V3.1 

6 

## Technische�Information�/�Technical�Information 

## IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

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**Ausgangskennlinie�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) VGE�=�15�V 

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200<br>180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Ausgangskennlinienfeld�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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200<br>VGE = 19V<br>180 VVGEGE = 17V = 15V<br>VGE = 13V<br>160 VVGEGE = 11V = 9V<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,�T1�/�T4�(typisch) transfer�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VGE) VCE�=�20�V 

**Schaltverluste�IGBT,�T1�/�T4�(typisch) switching�losses�IGBT,�T1�/�T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1.1� Ω ,�RGoff�=�1.1� Ω ,�VCE�=�400�V 

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200 11<br>180 TTTvjvvjj = 25°C = 12 = 150°C5°C 10 E E Eon off on, T , T , Tvj vj vj = 125°C  = 125  = 150°C° C<br>Eoff, Tvj = 150°C<br>9<br>160<br>8<br>140<br>7<br>120<br>6<br>100<br>5<br>80<br>4<br>60<br>3<br>40<br>2<br>20 1<br>0 0<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.1<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =100A,V CE =400V<br>8 1<br>Eon, Tvj = 125°C | ZthJH : IGBT aere nt<br>7 EEoff on , T, Tvj vj  = 125°C = 150°C [aaeee [a]<br>Eoff, Tvj = 150°C<br>ATU | | Th<br>6 | ooI ea<br>0,1<br>5 Z wi<br>See<br>4<br>ee aititea titi [attieam] ati<br>3<br>0,01<br>2<br>i: 1 2 3 4<br>1 ri[K/W]: 0,012 0,044 0,032 0,312<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T1 / T4 (RBSOA) Durchlasskennlinie der Diode, D2 / D3 (typisch)<br>reverse bias safe operating area IGBT, T1 / T4 (RBSOA) forward characteristic of Diode, D2 / D3 (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =1.1 Ω ,T vj =150°C<br>250 200<br>IICC, Modul, Chip 180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>200 160<br>140<br>150 120<br>100<br>100 80<br>60<br>/<br>50 40<br>fp<br>//<br>20<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

## IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

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Erec =f (I F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =400V IF =100A,V CE =400V<br>2,6 2,0<br>2,4 E E recrec, T , T vjvj = 125°C  = 150°C 1,8 EErecrec, T, Tvjvj = 125°C = 150°C<br>2,2<br>1,6<br>2,0<br>1,8 1,4<br>1,6<br>1,2<br>\ \<br>1,4<br>1,0<br>1,2<br>0,8<br>1,0<br>0,8 0,6<br>0,6<br>“PEEP Err 0,4 —<br>0,4<br>0,2<br>0,2<br>0,0 0,0<br>0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D2 / D3 Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>transient thermal impedance Diode, D2 / D3 output characteristic IGBT, T2 / T3 (typical)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =15V<br>10 200<br>EEE ZthJH : Diode 180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>Sate! EF LL<br>160<br>140<br>1 a a<br>CH<br>a 120<br>Po A<br>100<br>/<br>80<br>0,1 Lf i!<br>LE AT | IN LT 60 |<br>Fe Ee #<br>ee {f’<br>40<br>i: 1 2 3 4<br>PO i ri[K/W]: 0,035 0,149 0,311 0,655 ff<br>τ i[s]: 0,0005 0,005 0,05 0,2 20<br>0,01 i 0 > an<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VCE [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


9 

## Technische�Information�/�Technical�Information 

## IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

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**Ausgangskennlinienfeld�IGBT,�T2�/�T3�(typisch) output�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

**Übertragungscharakteristik�IGBT,�T2�/�T3�(typisch) transfer�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
200 200<br>180 VVVGEGEGE = 19V = 17V = 15V 180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>VGE = 13V<br>160 VVGEGE = 11V = 9V 160<br>140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�3.3� Ω ,�RGoff�=�3.3� Ω ,�VCE�=�400�V 

**Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(RG),�Eoff�=�f�(RG) VGE�=�±15�V,�IC�=�100�A,�VCE�=�400�V 

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10 24<br>9 EEEonoffon, T,, T Tvjvvjj = 125°C = 12 = 150°C5°C 22 E E Eon off on, T , T , Tvj vj vj = 125°C  = 125°C  = 150°C<br>Eoff, Tvj = 150°C 20 Eoff, Tvj = 150°C<br>8<br>18<br>7<br>16<br>6<br>14<br>5 12<br>10<br>4<br>8<br>3<br>6<br>2<br>4<br>1<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 3 6 9 12 15 18 21 24 27 30<br>IC [A] RG [ Ω ]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.1<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


10 

## IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

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**----- Start of picture text -----**<br>
ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =3.3 Ω ,T vj =150°C<br>10 {jtty 220<br>Sa| ZthJH : IGBT a 200 ELL I I C C , Modul , Chip<br>et eeeett ett emt 180<br>160<br>1<br>140<br>120<br>SSH 100 pe<br>80<br>0,1<br>60<br>40<br>i: 1 2 3 4<br>ri[K/W]: 0,03 0,11 0,08 0,78<br>τ i[s]: 0,0005 0,005 0,05 0,2 20<br>0,01 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800<br>t [s] VCE  [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =fil F)<br>RGon =3.3 Ω ,V CE =400V<br>150 10<br>135 | TTTvjvvjj = 25°C = 12 = 150°C5°C BRRi]i e 9 eee EErecrec, T, Tvjvj = 125°C = 150 [eee] °C<br>120 8<br>105 7<br>90 6<br>75 5<br>60 4 A<br>45 3<br>30 2<br>15 1<br>yZ<br>LA<br>PLAT EEE<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0 15 30 45 60 75 90 105 120 135 150<br>VF [V] IF [A]<br> [K/W]thJH  [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


11 

IGBT-Modul IGBT-Module 

## F3L200R12W2H3_B11 

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**----- Start of picture text -----**<br>
Erec =f(R G) ZthJH =f (t)<br>IF =75A,V CE =400V<br>8 10<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 150°C<br>7<br>eth eet ements<br>6 aaneT (ee| aRRR<br>1 aE<br>.<br>5<br>SS SSae<br>4 JO<br>a ee<br>3<br>oS wees 0,1 oi Att ot<br>2 ——<br>A<br>i: 1 2 3 4<br>1 ri[K/W]: 0,042 0,093 0,387 0,528<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,01<br>0 3 6 9 12 15 18 21 24 27 30 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>Rtyp<br>————<br>10000<br>Ki EE |<br>ee<br>NO<br>1000 EeaaNeeeea es<br>(a<br>PN<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


12 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L200R12W2H3_B11 

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Schaltplan�/�Circuit�diagram<br>**----- End of picture text -----**<br>


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�<br>Gehäuseabmessungen�/�Package�outlines<br>Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.1<br>**----- End of picture text -----**<br>


13 

## IGBT-Modul IGBT-Module 

## F3L200R12W2H3_B11 

## **Nutzungsbedingungen** 

## **WARNHINWEIS** 

## **WARNINGS** 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/F3L200R12W2H3B11BPSA1/igbt-module-three-level-inverter-100-a-155-v-600-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/f3l200r12w2h3b11bpsa1/igbt-module-n-ch-1-2kv-100a/dp/2726108)
---

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