# IGBT Module, Three level Inverter, 50 A, 1.55 V, 375 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2839505/)

**URL**: https://novapart.co/products/F3L100R12W2H3B11BPSA1/igbt-module-three-level-inverter-50-a-155-v-375-w
**SKU**: F3L100R12W2H3B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €36.8300
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPack |
| Igbt Technology | IGBT 3 High Speed |
| Igbt Termination | Solder |
| Power Dissipation | 375W |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | 375W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839505/)

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## F3L100R12W2H3_B11 

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VCES = 1200V<br>IC nom = 50A / ICRM = 100A<br>**----- End of picture text -----**<br>


- 3-Level-Applikationen • 3-Level-Applications 

- • Solar Anwendungen • Solar Applications Elektrische Eigenschaften Electrical Features • High Speed IGBT H3 • High Speed IGBT • Niedrige Schaltverluste • Low Switching • T yjop = 150°C • T vjop = 150°C Mechanische Eigenschaften Mechanical Features • PressFIT Verbindungstechnik • PressFIT Contact • • 

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1 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**IGBT,�T1�/�T4�/�IGBT,�T1�/�T4 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L100R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2015-02-03<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>ImplementierterKollektor-Strom<br>Implementedcollectorcurrent<br>ICN<br>100<br>A<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>375<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,75<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,05<br>5,80<br>6,45<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,15<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,345<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,13<br>0,14<br>0,145<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,02<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,03<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2200 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>1,05<br>1,65<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 2400 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>1,60<br>2,60<br>2,95<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,30<br>0,40<br>K/W||



|preparedby:CM|dateofpublication:2015-02-03|
|---|---|
|approvedby:AKDA|revision:2.3|



2 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,35||K/W|
|---|---|---|---|---|---|---|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�D2�/�D3�/�Diode,�D2�/�D3 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|100|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|850<br>800|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,35<br>1,30<br>1,25|1,60|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 2200 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||52,0<br>57,0<br>59,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 2200 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,90<br>3,60<br>4,10||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 2200 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,45<br>0,75<br>0,85||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,55|0,70|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,65||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CM date�of�publication:�2015-02-03 approved�by:�AKDA revision:�2.3 

3 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>F3L100R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2015-02-03<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 75°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>175<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,90<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>3,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,095<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>tr<br>0,017<br>0,021<br>0,022<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>td off<br>0,19<br>0,22<br>0,25<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>tf<br>0,033<br>0,05<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 8,2Ω<br>Eon<br>1,10<br>1,75<br>1,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 8,2Ω<br>Eoff<br>1,50<br>2,05<br>2,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>350<br>250<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,75<br>0,85<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�D1�/�D4�/�Diode,�D1�/�D4** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|35|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|510<br>450|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,00<br>1,70<br>1,65|2,55|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 35 A, - diF/dt = 2400 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||70,0<br>85,0<br>90,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 35 A, - diF/dt = 2400 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>5,70<br>7,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 35 A, - diF/dt = 2400 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,70<br>1,75<br>2,15||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,65|0,75|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||14||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

|preparedby:CM|dateofpublication:2015-02-03|
|---|---|
|approvedby:AKDA|revision:2.3|



5 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**||min.|typ.|max.||
|---|---|---|---|---|---|---|
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|AngabengemäßgültigerApplicationNote.<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CM date�of�publication:�2015-02-03 approved�by:�AKDA revision:�2.3 

6 

## IGBT-Modul IGBT-Module Technische Information F3L100R12W2H3_B11 / Technical Information 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 Tvj |  = 25°C / / 100 es VGE = 19V | !<br>90 Tvj = 125°C 90 VGE = 17V<br>E Tvj = 150°C O] P VGE = 15V oe<br>VGE = 13V<br>80 80 VGE = 11V<br>e e e [; eeia | ae’<br>VGE = 9V<br>po A | TT<br>70 70<br>Pe<br>60 60<br>a eee eee<br>/<br>/<br>50 50<br>40 eoJo“ 40 Be1;<br>30 30<br>eeaseee<br>20 20<br>eeae an) ae<br>10 10<br>ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT, T1 / T4 (typisch) Schaltverluste IGBT, T1 / T4 (typisch)<br>transfer characteristic IGBT, T1 / T4 (typical) switching losses IGBT, T1 / T4 (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =11 Ω ,V CE =400V<br>100 6,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>5,0 Eoff, Tvj = 150°C<br>e — tf | ><br>80<br>70<br>PA |e<br>4,0<br>a 7 ca a<br>60<br>50 3,0<br>pt | pe eee| | AxlWo i<br>ae<br>40<br>pt of ae “4<br>| a | or ae<br>2,0<br>30<br>pf | yt | | ae<br>| } /\<br>20<br>fey | | 4<br>1,0<br>BA (are<br>10<br>0 p e 0,0 -<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-Modul IGBT-Module 

## F3L100R12W2H3_B11 

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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =50A,V CE =400V<br>4,0 1<br>oo HE<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>3,5 [- Eon, Tvj = 150°C bit tty] H— S O E ee tt<br>Eoff, Tvj = 150°C<br>ee ee<br>fe J f | dey AaPT TT0 TETAe T<br>3,0<br>Co nc  ree<. e SSUIE RALITIOMAAS/(OUmUUINIINGNUUII<br>2,5<br>e e r ) Tah ET TUT<br>2,0 0,1<br>See aise<br>PT<br>| VETTTT<br>EZeaneee = |UIITP<br>1,5 PP TT} | yy] yy Ta7200|<br>1,0<br>i: 1 2 3 4<br>SS a |<br>0,5 ri[K/W]: 0,0195 0,0715 0,052 0,507<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>PCE UN rrr<br>0,0 0,01<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T1 / T4 (RBSOA) Durchlasskennlinie der Diode, D2 / D3 (typisch)<br>reverse bias safe operating area IGBT, T1 / T4 (RBSOA) forward characteristic of Diode, D2 / D3 (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =1.1 Ω ,T vj =150°C<br>120 100<br>IC, Modul Tvj = 25°C<br>IC, Chip 90 Tvj = 125°C<br>Tvj = 150°C<br>EJ<br>100<br>| 80 6 EFPm<br>, u |<br>70<br>80<br>60<br>60 Pe} i] ta 50 ;<br>40<br>40<br>30<br>20<br>20<br>es<br>10<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,3 0,6 0,9 1,2 1,5 1,8<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

## IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

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Erec =f (I F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =400V IF =50A,V CE =400V<br>1,2 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>1,1 Erec, Tvj = 150°C 0,9 Erec, Tvj = 150°C<br>1,0<br>B ee ee R e eee<br>0,8<br>0,9<br>EEE, ESRC<br>0,7<br>0,8 SRRReee aes \<br>0,6<br>0,7 PLE eet | XS<br>Cope EK<br>0,6 0,5<br>0,5 N<br>pte t | | P E 0,4<br>Patt<br>0,4<br>A TE ET EP SA<br>0,3<br>HEEEEEEEEH me s<br>0,3<br>ECE PES<br>0,2<br>0,2<br>0,1<br>0,1<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJH = f(t) IC =f(V CE)<br>VGE =15V<br>10 100<br>i ZthJH : Diode a Tvj = 25°C vy<br>o o TT 90 Tvj = 125°C ay<br>rT TT T T TT | Tvj = 150°C oy<br>80<br>FRETS | 70 == =<br>1 Pett et yf<br>PoIE 0 eeeUI e e eee 60 —>— oy<br>PTPT TTTTT rerTTT ee / jf<br>50<br>a fi<br>TEER Ra a 40 ee ee<br>0,1 ACM<br>PA LIN LIM LN 30 |<br>PT TTTETT<br>arT TT TT TT 20 ee ae<br>i: 1 2 3 4<br>ri[K/W]: 0,072 0,12 0,348 0,66<br>a τ i[s]: 0,0005 0,005 0,05 0,2 | | cc 10<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5<br>t [s] VCE [V]<br> [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


9 

IGBT-Modul IGBT-Module 

## F3L100R12W2H3_B11 

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IC CE) IC GE)<br>Tvj rc VCE OO Vv<br>100 100<br>a / as<br>VGE = 19V Tvj = 25°C<br>90 VGE = 17V 90 Tvj = 125°C<br>R VGE = 15V A e Tvj = 150°C o<br>VGE = 13V<br>80 VGE = 11V 80<br>VGE = 9V<br>i varcen ee<br>ee e I e __]<br>70 70<br>BRR 7a/ eee ee<br>60 60<br>pt eT/<br>50 50<br>40 SRP SRR eee 40 eee<br>30 pie s 30<br>2) rT yyy} fo|g<br>20 20<br>4eee eee<br>10 piyiti tt tty 10 EP |<br>PAL ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon ={(R),E G off =f(R G)<br>VGE =415V,R Gon =82 Ω ,R Goff =82 Ω ,V CE =400V VGE =+15V,1 C =50A,V CE =400V<br>5,0 12<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>4,5 mH Eoff, Tvj = 125°C Jt) 11 mm Eoff, Tvj = 125°C LE<br>Eon, Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C 10 Eoff, Tvj = 150°C<br>I= P rPry<br>4,0<br>9<br>T. .) . 1) Ata ee4 ee e e res<br>3,5<br>8<br>T e e pot |<br>3,0 7<br>ee pot | |tere<br>2,5 6<br>ee Ae 5 eee<br>2,0<br>4<br>Ppwere e ee eeeL| e ee<br>1,5<br>3<br>1,0<br>2<br>» 2a | elageeate | |<br>0,5 1<br>Dea pt tT | tt<br>0,0 EET ET EE 0 PoP<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80<br>IC [A] RG [ Ω ]<br> [A]  [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


10 

IGBT-Modul IGBT-Module 

## F3L100R12W2H3_B11 

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ZthJH =f(t IC =f(V CE)<br>® VGE se SV.R Goff =8.2 Ω ,T vj =150°C<br>10 120<br>(ooo aot —<br>ZthJH = f (t) IC, Modul<br>oro oor TT 110 IC, Chip<br>H— (ea e<br>n i e t TT 100 || Poff]<br>CA C C | |<br>Cn 90 TFT oT<br>1 MIE INL t on 80 ee eee ee<br>Pta 0a ae<br>PTCeTe TTTT 70<br>a i 60 eee<br>50<br>0,1 40<br>a<br>TePTTTTee ee eee 30 pb fe fe Te<br>n ie i: 1 2 3 4 20 Pf fF<br>ri[K/W]: 0,084 0,195 0,587 0,584<br>e τ i[s]: M 0,0005 0,005 0,05 0,2 10 ET<br>UM mol l Ee<br>0,01 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE  [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = fo Ω ,V CE =400V<br>70 3,0<br>65 Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 150°C<br>60 Tvj = 150°C<br>E o booeA Ay 2,5 FE| —_ =<br>55<br>| a<br>50<br>2,0<br>45<br>40<br>35 ara 1,5 ET) fe<br>30<br>25<br>1,0<br>20<br>15<br>ee 4 0,5<br>10<br>5<br>eee LT<br>0 Pe tt || 0,0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0 10 20 30 40 50 60 70<br>VF [V] IF [A]<br> [K/W]thJH  [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


11 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

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Erec =f(R G) ZthJH =f (t)<br>IF =35A,V CE =400V<br>3,0 10<br>E a rec, Tvj = 125°C e i ZthJH : Diode tee<br>H— eee<br>Erec, Tvj = 150°C<br>TY E E Ht HH<br>2,5 E | [|] T P yyy ooC eeo TTT I ee<br>2,0 PLE,  yy py 1 a | |<br>\, Pee e  et<br>~<br>N|<br>N\ se . |<br>1,5 =<br>1,0 P) eeNoe> tee. 0,1 STeeUNaeALL ELEi<br>a<br>ee a ee |<br>0,5 Tt e en ee i: eel 1 2 3 4<br>ri[K/W]: 0,036 0,156 0,324 0,684<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,01<br>0 10 20 30 40 50 60 70 80 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>' J Rtyp a—————————<br>Ra cer<br>aa e eee ee<br>e<br>es ee e e ee eeee<br>10000<br>SS _—_}_—_—_|____<br>a<br>aESNeNa eeeeee eeee<br>PN<br>pp Nf<br>1000<br>ee<br>po NN<br>a<br>a ee<br>aee ee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module F3L100R12W2H3_B11 

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Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


## **Vorläufige�Daten Preliminary�Data** 

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�<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2015-02-03<br>approved�by:�AKDA revision:�2.3<br>**----- End of picture text -----**<br>


13 

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IGBT-Modul<br>IGBT-Module F3L100R12W2H3_B11<br>**----- End of picture text -----**<br>


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Nutzungsbedingungen<br>**----- End of picture text -----**<br>


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application.<br>**----- End of picture text -----**<br>


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## Links

- [View this product on Novapart](https://novapart.co/products/F3L100R12W2H3B11BPSA1/igbt-module-three-level-inverter-50-a-155-v-375-w)
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- [Supplier page](https://es.farnell.com/infineon/f3l100r12w2h3b11bpsa1/igbt-module-n-ch-1-2kv-50a/dp/2839505)
---

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