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F3L100R12W2H3B11BPSA1
IGBT Module, Three level Inverter, 50 A, 1.55 V, 375 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPack
- IGBT Technology: IGBT 3 High Speed
- IGBT Termination: Solder
- Power Dissipation: 375W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 50A
- Power Dissipation Pd: 375W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 36.83 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br>
## F3L100R12W2H3_B11
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VCES = 1200V<br>IC nom = 50A / ICRM = 100A<br>**----- End of picture text -----**<br>
- 3-Level-Applikationen • 3-Level-Applications
- • Solar Anwendungen • Solar Applications Elektrische Eigenschaften Electrical Features • High Speed IGBT H3 • High Speed IGBT • Niedrige Schaltverluste • Low Switching • T yjop = 150°C • T vjop = 150°C Mechanische Eigenschaften Mechanical Features • PressFIT Verbindungstechnik • PressFIT Contact • •
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1
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L100R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,�T1�/�T4�/�IGBT,�T1�/�T4 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L100R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2015-02-03<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>ImplementierterKollektor-Strom<br>Implementedcollectorcurrent<br>ICN<br>100<br>A<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>375<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,75<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,05<br>5,80<br>6,45<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,15<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,345<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,13<br>0,14<br>0,145<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,02<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,03<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2200 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>1,05<br>1,65<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 2400 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>1,60<br>2,60<br>2,95<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,30<br>0,40<br>K/W||
|preparedby:CM|dateofpublication:2015-02-03|
|---|---|
|approvedby:AKDA|revision:2.3|
2
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L100R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,35||K/W|
|---|---|---|---|---|---|---|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Diode,�D2�/�D3�/�Diode,�D2�/�D3 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|100|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|850<br>800|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,35<br>1,30<br>1,25|1,60|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 2200 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||52,0<br>57,0<br>59,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 2200 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,90<br>3,60<br>4,10||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 2200 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,45<br>0,75<br>0,85||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,55|0,70|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,65||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�CM date�of�publication:�2015-02-03 approved�by:�AKDA revision:�2.3
3
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L100R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L100R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2015-02-03<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 75°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>175<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,90<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>3,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,095<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>tr<br>0,017<br>0,021<br>0,022<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>td off<br>0,19<br>0,22<br>0,25<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>tf<br>0,033<br>0,05<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 8,2Ω<br>Eon<br>1,10<br>1,75<br>1,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 8,2Ω<br>Eoff<br>1,50<br>2,05<br>2,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>350<br>250<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,75<br>0,85<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
4
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L100R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�D1�/�D4�/�Diode,�D1�/�D4**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|35|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|510<br>450|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,00<br>1,70<br>1,65|2,55|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 35 A, - diF/dt = 2400 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||70,0<br>85,0<br>90,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 35 A, - diF/dt = 2400 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>5,70<br>7,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 35 A, - diF/dt = 2400 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,70<br>1,75<br>2,15||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,65|0,75|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||14||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin.
|preparedby:CM|dateofpublication:2015-02-03|
|---|---|
|approvedby:AKDA|revision:2.3|
5
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L100R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**||min.|typ.|max.||
|---|---|---|---|---|---|---|
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|AngabengemäßgültigerApplicationNote.<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�CM date�of�publication:�2015-02-03 approved�by:�AKDA revision:�2.3
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## IGBT-Modul IGBT-Module Technische Information F3L100R12W2H3_B11 / Technical Information
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 Tvj | = 25°C / / 100 es VGE = 19V | !<br>90 Tvj = 125°C 90 VGE = 17V<br>E Tvj = 150°C O] P VGE = 15V oe<br>VGE = 13V<br>80 80 VGE = 11V<br>e e e [; eeia | ae’<br>VGE = 9V<br>po A | TT<br>70 70<br>Pe<br>60 60<br>a eee eee<br>/<br>/<br>50 50<br>40 eoJo“ 40 Be1;<br>30 30<br>eeaseee<br>20 20<br>eeae an) ae<br>10 10<br>ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT, T1 / T4 (typisch) Schaltverluste IGBT, T1 / T4 (typisch)<br>transfer characteristic IGBT, T1 / T4 (typical) switching losses IGBT, T1 / T4 (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =11 Ω ,V CE =400V<br>100 6,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>5,0 Eoff, Tvj = 150°C<br>e — tf | ><br>80<br>70<br>PA |e<br>4,0<br>a 7 ca a<br>60<br>50 3,0<br>pt | pe eee| | AxlWo i<br>ae<br>40<br>pt of ae “4<br>| a | or ae<br>2,0<br>30<br>pf | yt | | ae<br>| } /\<br>20<br>fey | | 4<br>1,0<br>BA (are<br>10<br>0 p e 0,0 -<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module
## F3L100R12W2H3_B11
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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =50A,V CE =400V<br>4,0 1<br>oo HE<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>3,5 [- Eon, Tvj = 150°C bit tty] H— S O E ee tt<br>Eoff, Tvj = 150°C<br>ee ee<br>fe J f | dey AaPT TT0 TETAe T<br>3,0<br>Co nc ree<. e SSUIE RALITIOMAAS/(OUmUUINIINGNUUII<br>2,5<br>e e r ) Tah ET TUT<br>2,0 0,1<br>See aise<br>PT<br>| VETTTT<br>EZeaneee = |UIITP<br>1,5 PP TT} | yy] yy Ta7200|<br>1,0<br>i: 1 2 3 4<br>SS a |<br>0,5 ri[K/W]: 0,0195 0,0715 0,052 0,507<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>PCE UN rrr<br>0,0 0,01<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T1 / T4 (RBSOA) Durchlasskennlinie der Diode, D2 / D3 (typisch)<br>reverse bias safe operating area IGBT, T1 / T4 (RBSOA) forward characteristic of Diode, D2 / D3 (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =1.1 Ω ,T vj =150°C<br>120 100<br>IC, Modul Tvj = 25°C<br>IC, Chip 90 Tvj = 125°C<br>Tvj = 150°C<br>EJ<br>100<br>| 80 6 EFPm<br>, u |<br>70<br>80<br>60<br>60 Pe} i] ta 50 ;<br>40<br>40<br>30<br>20<br>20<br>es<br>10<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,3 0,6 0,9 1,2 1,5 1,8<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module F3L100R12W2H3_B11
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Erec =f (I F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =400V IF =50A,V CE =400V<br>1,2 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>1,1 Erec, Tvj = 150°C 0,9 Erec, Tvj = 150°C<br>1,0<br>B ee ee R e eee<br>0,8<br>0,9<br>EEE, ESRC<br>0,7<br>0,8 SRRReee aes \<br>0,6<br>0,7 PLE eet | XS<br>Cope EK<br>0,6 0,5<br>0,5 N<br>pte t | | P E 0,4<br>Patt<br>0,4<br>A TE ET EP SA<br>0,3<br>HEEEEEEEEH me s<br>0,3<br>ECE PES<br>0,2<br>0,2<br>0,1<br>0,1<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJH = f(t) IC =f(V CE)<br>VGE =15V<br>10 100<br>i ZthJH : Diode a Tvj = 25°C vy<br>o o TT 90 Tvj = 125°C ay<br>rT TT T T TT | Tvj = 150°C oy<br>80<br>FRETS | 70 == =<br>1 Pett et yf<br>PoIE 0 eeeUI e e eee 60 —>— oy<br>PTPT TTTTT rerTTT ee / jf<br>50<br>a fi<br>TEER Ra a 40 ee ee<br>0,1 ACM<br>PA LIN LIM LN 30 |<br>PT TTTETT<br>arT TT TT TT 20 ee ae<br>i: 1 2 3 4<br>ri[K/W]: 0,072 0,12 0,348 0,66<br>a τ i[s]: 0,0005 0,005 0,05 0,2 | | cc 10<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5<br>t [s] VCE [V]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br>
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IGBT-Modul IGBT-Module
## F3L100R12W2H3_B11
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IC CE) IC GE)<br>Tvj rc VCE OO Vv<br>100 100<br>a / as<br>VGE = 19V Tvj = 25°C<br>90 VGE = 17V 90 Tvj = 125°C<br>R VGE = 15V A e Tvj = 150°C o<br>VGE = 13V<br>80 VGE = 11V 80<br>VGE = 9V<br>i varcen ee<br>ee e I e __]<br>70 70<br>BRR 7a/ eee ee<br>60 60<br>pt eT/<br>50 50<br>40 SRP SRR eee 40 eee<br>30 pie s 30<br>2) rT yyy} fo|g<br>20 20<br>4eee eee<br>10 piyiti tt tty 10 EP |<br>PAL ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon ={(R),E G off =f(R G)<br>VGE =415V,R Gon =82 Ω ,R Goff =82 Ω ,V CE =400V VGE =+15V,1 C =50A,V CE =400V<br>5,0 12<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>4,5 mH Eoff, Tvj = 125°C Jt) 11 mm Eoff, Tvj = 125°C LE<br>Eon, Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C 10 Eoff, Tvj = 150°C<br>I= P rPry<br>4,0<br>9<br>T. .) . 1) Ata ee4 ee e e res<br>3,5<br>8<br>T e e pot |<br>3,0 7<br>ee pot | |tere<br>2,5 6<br>ee Ae 5 eee<br>2,0<br>4<br>Ppwere e ee eeeL| e ee<br>1,5<br>3<br>1,0<br>2<br>» 2a | elageeate | |<br>0,5 1<br>Dea pt tT | tt<br>0,0 EET ET EE 0 PoP<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80<br>IC [A] RG [ Ω ]<br> [A] [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Modul IGBT-Module
## F3L100R12W2H3_B11
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ZthJH =f(t IC =f(V CE)<br>® VGE se SV.R Goff =8.2 Ω ,T vj =150°C<br>10 120<br>(ooo aot —<br>ZthJH = f (t) IC, Modul<br>oro oor TT 110 IC, Chip<br>H— (ea e<br>n i e t TT 100 || Poff]<br>CA C C | |<br>Cn 90 TFT oT<br>1 MIE INL t on 80 ee eee ee<br>Pta 0a ae<br>PTCeTe TTTT 70<br>a i 60 eee<br>50<br>0,1 40<br>a<br>TePTTTTee ee eee 30 pb fe fe Te<br>n ie i: 1 2 3 4 20 Pf fF<br>ri[K/W]: 0,084 0,195 0,587 0,584<br>e τ i[s]: M 0,0005 0,005 0,05 0,2 10 ET<br>UM mol l Ee<br>0,01 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = fo Ω ,V CE =400V<br>70 3,0<br>65 Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 150°C<br>60 Tvj = 150°C<br>E o booeA Ay 2,5 FE| —_ =<br>55<br>| a<br>50<br>2,0<br>45<br>40<br>35 ara 1,5 ET) fe<br>30<br>25<br>1,0<br>20<br>15<br>ee 4 0,5<br>10<br>5<br>eee LT<br>0 Pe tt || 0,0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0 10 20 30 40 50 60 70<br>VF [V] IF [A]<br> [K/W]thJH [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Modul IGBT-Module F3L100R12W2H3_B11
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Erec =f(R G) ZthJH =f (t)<br>IF =35A,V CE =400V<br>3,0 10<br>E a rec, Tvj = 125°C e i ZthJH : Diode tee<br>H— eee<br>Erec, Tvj = 150°C<br>TY E E Ht HH<br>2,5 E | [|] T P yyy ooC eeo TTT I ee<br>2,0 PLE, yy py 1 a | |<br>\, Pee e et<br>~<br>N|<br>N\ se . |<br>1,5 =<br>1,0 P) eeNoe> tee. 0,1 STeeUNaeALL ELEi<br>a<br>ee a ee |<br>0,5 Tt e en ee i: eel 1 2 3 4<br>ri[K/W]: 0,036 0,156 0,324 0,684<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,01<br>0 10 20 30 40 50 60 70 80 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>' J Rtyp a—————————<br>Ra cer<br>aa e eee ee<br>e<br>es ee e e ee eeee<br>10000<br>SS _—_}_—_—_|____<br>a<br>aESNeNa eeeeee eeee<br>PN<br>pp Nf<br>1000<br>ee<br>po NN<br>a<br>a ee<br>aee ee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L100R12W2H3_B11
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## **Vorläufige�Daten Preliminary�Data**
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�<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�CM date�of�publication:�2015-02-03<br>approved�by:�AKDA revision:�2.3<br>**----- End of picture text -----**<br>
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IGBT-Modul<br>IGBT-Module F3L100R12W2H3_B11<br>**----- End of picture text -----**<br>
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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