# IGBT Module, Twelve Pack, 25 A, 1.85 V, 160 W, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3227665/)

**URL**: https://novapart.co/products/F1225R12KT4GBOSA1/igbt-module-twelve-pack-25-a-185-v-160-w-175-c
**SKU**: F1225R12KT4GBOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €62.1000
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 160W |
| Igbt Configuration | Twelve Pack |
| Transistor Mounting | Panel |
| Dc Collector Current | 25A |
| Power Dissipation Pd | 160W |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 25A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227665/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules F12-25R12KT4G 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™3�Modul�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode� EconoPACK™3�module�with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�Diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>F12-25R12KT4G<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 20Ω<br>td on<br>0,03<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 20Ω<br>tr<br>0,02<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>td off<br>0,18<br>0,27<br>0,29<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>tf<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 1300 A/µs (Tvj= 150°C)<br>RGon= 20Ω<br>Eon<br>1,70<br>2,30<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 20Ω<br>Eoff<br>1,40<br>2,00<br>2,15<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,185<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-模块IGBT-modules F12-25R12KT4G 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|70|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,50<br>4,20<br>4,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,80||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,26||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CM approved�by:�RS 

date�of�publication:�2013-11-04 revision:�2.0 

2 

IGBT-模块 IGBT-modules 

## F12-25R12KT4G 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>2,50<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300|g|



3 

IGBT-模块 IGBT-modules 

## F12-25R12KT4G 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE 15 Vv Tvj = {50°C<br>50 a 50<br>Tvj = 25°C VGE = 19V<br>45 Tvj = 125°C 45 VGE = 17V<br>EFD Tvj = 150°C AZ , Y7) Fa V e GE = 15V a | e [7 7<br>VGE = 13V<br>40 oe 40 | VGE = 11V nee<br>VGE =   9V<br>P e JE S e<br>35 35<br>eee<br>30 30<br>ene) ae eee eee<br>25 25<br>‘ eee eee soe<br>20 PPL a 20 U , 4<br>/<br>15 ae sceAwe eee 15 LLaeA<br>10 ee, ee 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>ME IGBT, HAS (BB) FFRIAE IGBT, HBA ( BB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f (V GE) Eon =f(l)E C off =f(l C)<br>VCE =20V VGE =+15V,R Gon =20 Ω ,R Goff =20 Ω ,V CE =600V<br>50 8<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 [ T re vj = 125°C ee [e Eoff, T ee vj = 125°C I Oo<br>Tvj = 150°C ma 7 I Eon, Tvj = 150°C | | | | | FY<br>Eoff, Tvj = 150°C<br>ee | PPP raz<br>40<br>6<br>Pf LP a e e  ee<br>35<br>[if P| | | | | | lt PY<br>30 eeee 5 e e<br>25 4<br>20 P| f | | a}! ft poa | | | ft | dt a<br>3<br>15 Pt Pot tT | a ae<br>2<br>10 PT | |TATFAty e eeeeee<br>Pr Aen 1 nn?an a e<br>5<br>0 0<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## F12-25R12KT4G 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =25A,V CE =600V<br>12 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>10 Eoff, Tvj = 150°C<br>P orHott ft} er AREEAH<br>8<br>pt ft | | te| a I a ae |<br>Feeeeetoog LOMO<br>6 0,1<br>tit tat | | eA<br>pt | bart tt en ih<br>4 |Ta]| | em |ff Tdltt iya ee |<br>9 Zo Ye TE<br>2<br>i:    1    2    3    4<br>ri[K/W]:   0,057   0,3135   0,304   0,2755<br>Pesce) f o τ i[s]:    0,01    0,02    o 0,05    0,1<br>0 PEt | Ee 0,01 CLA | bo col l<br>0 20 40 60 80 100 120 140 160 180 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>I reverse C CE bias )  safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE “i sV.R Goff =20 Ω ,T vj =150°C a<br>60 50<br>IC, Modul Tvj = 25°C<br>IC, Chip 45 Tvj = 125°C<br>Tvj = 150°C<br>SS Soe<br>50<br>— er e<br>40<br>35<br>PEEL) Ee e<br>40<br>PPLE<br>30<br>Pi) GeeprecepeeA<br>30 25<br>20<br>CCCECTE FECA<br>20<br>15<br>10<br>CECE beecreefccee<br>10<br>PE A,<br>5<br>PELL ey<br>0 EL ) 0 t ee ter<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>


## F12-25R12KT4G 

## **初步数据** 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon $9 Ω ,V CE =600V IF = 28 KV CE = 600 V<br>2,5 2,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>2,0 2,0<br>Ty le TT<br>1,5 1,5<br>7 va >< a tS<br>1,0 1,0<br>0,5 0,5<br>0,0 0,0<br>0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180<br>IF [A] RG [ Ω ]<br>mAh RE, 2<br>transient thermal impedance Diode, Inverter<br>ZthJC = f (t)<br>10<br>ZthJC : Diode<br>oo o<br>rT TT T T TT<br>a |<br>PTEa eeTTI T E ET)<br>1 [Petoeee e<br>Pt et th<br>a eee<br>rT TTT A T T<br>a)<br>ROP TTI MR ITTTIMERITIHTIMA Ati<br>0,1 2A<br>Ft<br>A<br>VT TT TT TT<br>TC er<br>i:    1    2    3    4<br>ri[K/W]:   0,081   0,4455   0,432   0,3915<br>I τ i[s]:    l 0,01    0,02    0,05    0,1<br>E NE<br>0,01 | im o<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules F12-25R12KT4G 

## **接线图�/�circuit_diagram_headline** 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **封装尺寸�/�package�outlines** 

**==> picture [46 x 45] intentionally omitted <==**

**==> picture [210 x 74] intentionally omitted <==**

**==> picture [91 x 86] intentionally omitted <==**

**==> picture [265 x 91] intentionally omitted <==**

|preparedby:CM|dateofpublication:2013-11-04|
|---|---|
|approvedby:RS|revision:2.0|



7 

IGBT-模块 IGBT-modules 

## F12-25R12KT4G 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



## Links

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