ES3A
Fast / Ultrafast Diode, 50 V, 3 A, Single, 950 mV, 30 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):3A; Diode Configuration:Single; Forward Voltage VF Max:950mV; Reverse Recovery Time trr Max:30ns; Forward Surge Current Ifsm Max:100A; Op
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: ES3A
- Qualification: -
- Diode Case Style: DO-214AB (SMC)
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 30ns
- Average Forward Current: 3A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.17 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**DATA SHEET** ~~a~~ **www.onsemi.com** ## Fast Rectifiers ## ES3A - ES3J ## **Features** - For Surface Mount Applications - Glass−Passivated Junction - Low−Profile Package - Easy Pick and Place - Built−in Strain Relief - Superfast Recovery Times for High Efficiency **==> picture [169 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2<br>Cathode Anode<br>1<br>@ 2<br>SMC<br>CASE 403AG<br>**----- End of picture text -----**<br> - These Devices are Pb−Free and Halid Free ## **MARKING DIAGRAM** ON ZXYY DDDD Z = Assembly Plant Code X = Last Digit of Year of Manufacture YY = Weekly Code of Manufacture DDDD = Specific Device Code ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Device Code Marking**|**Package**|**Shipping**†| |ES3A|ES3A|DO−214AB (SMC)<br>(Pb−Free)|3000 / Tape & Reel| |ES3B|ES3B||3000 / Tape & Reel| |ES3C|ES3C||3000 / Tape & Reel| |ES3D|ES3D||3000 / Tape & Reel| |ES3J|ES3J||3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **ES3J/D** **1** © Semiconductor Components Industries, LLC, 1999 **September, 2021 − Rev. 3** **ES3A − ES3J** ## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**ABSOLUTE**|**MAXIMUM RATINGS**(TA= 25°C unless otherwise noted)||||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**|||||**Unit**| |||**ES3A**|**ES3B**|**ES3C**|**ES3D**|**ES3J**|| |VRRM|Maximum Repetitive Reverse Voltage|50|100|150|200|600|V| |IF(AV)|Average Rectified Forward Current,<br>.375” Lead Length TA= 75°C|3.0|||||A| |IFSM|Non−Repetitive Peak Forward Surge Current 8.3 ms Single<br>Half−Sine Wave|100|||||A| |TSTG|Storage Temperature Range|−55 to +150|||||°C| |TJ|Operating Junction Temperature|−55 to +150|||||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**THERMAL CH**|**ARACTERISTICS**(TA= 25°C unless otherwise noted)|**ARACTERISTICS**(TA= 25°C unless otherwise noted)||| |---|---|---|---|---| |**Symbol**|**Parameter**||**Value**|**Unit**| |PD|Power Dissipation||1.66|W| |R�JA|Thermal Resistance,<br>Junction to Ambient (Note 1)|Maximum Land Pattern: 16 x 16 mm|47|°C/W| |||Minimum Land Pattern: 2.6 x 3.2 mm|125|| |R�JL|Thermal Resistance,<br>Junction to Lead (Note 1)|Maximum Land Pattern: 16 x 16 mm|12|°C/W| |||Minimum Land Pattern: 2.6 x 3.2 mm|16|| 1. Device mounted on FR−4 PCB 0.013 mm. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICA**|**L CHARACTERISTICS**(TA=|25°C unless otherwise noted)|25°C unless otherwise noted)||||||| |---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Value**|||||**Unit**| |||||**ES3A**|**ES3B**|**ES3C**|**ES3D**|**ES3J**|| |VF|Maximum Forward Voltage|IF= 3.0 A||0.95||||1.70|V| |trr|Reverse Recovery Time|IF= 0.5 A,<br>IR= 1.0 A<br>IRR= 0.25 A|Typ.|20||||35|ns| ||||Max.|30||||45|| |IR|Maximum Reverse Current<br>at Rated VR|TA= 25°C||10|||||�A| |||TA= 100°C||500|||||| |CT|Total Capacitance|VR= 4.0 V, f = 1.0 MHz||45|||||pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **ES3A − ES3J** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [223 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>3<br>2.5<br>2 Single Phase<br>Half Wave<br>1.5 60 Hz<br>Resistive OR<br>1<br>Inductive Load<br>0.5 .375” (9.0 mm) Lead<br>Lengths<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature ( ° C)<br>, Average Rectified Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **==> picture [225 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ES3A−ES3D<br>10<br>ES3J<br>1<br>0.1 TA = 25 ° C<br>Pulse Width = 300 � s<br>2% Duty Cycle<br>0.01<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VF, Forward Voltage Drop (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 1. Forward Current Derating Curve** **Figure 2. Forward Voltage Characteristics** **==> picture [223 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.1 0.5 1 5 10 20 50 100 500<br>VR, Reverse Voltage (V)<br>, Total Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> **==> picture [226 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TA = 100 ° C<br>100<br>T A = 75 ° C<br>10<br>1 TA = 25 ° C<br>0.1<br>0 20 40 60 80 100 120 140<br>Percent of Rated Peak Reverse Voltage (%)<br>A)<br>�<br>, Reverse Current (<br>IR<br>**----- End of picture text -----**<br> **Figure 3. Total Capacitance** **Figure 4. Reverse Current vs. Reverse Voltage** **==> picture [231 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 50 � 50 �<br>NONINDUCTIVE NONINDUCTIVE<br>(−)<br>DUT<br>PULSE<br>GENERATOR<br>50 V<br>(Note 2)<br>(approx)<br>(+)<br>50 � OSCILLOSCOPE<br>NONINDUCTIVE (Note 2)<br>NOTES:<br>2. Rise time = 7.0 ns max; Input impedance = 1.0 M � 22 pF.<br>3. Rise time = 10 ns max; Source impedance = 50 � .<br>**----- End of picture text -----**<br> **==> picture [212 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>+0.5 A<br> 0<br>−0.25 A<br>−1.0 A<br>1.0 cm SET TIME BASE FOR<br>5 / 10 ns / cm<br>**----- End of picture text -----**<br> **Figure 5. Reverse Recovery Time Characteristics and Test Circuit Diagram** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMC** CASE 403AG ISSUE O DATE 31 AUG 2016 **==> picture [479 x 352] intentionally omitted <==** **----- Start of picture text -----**<br> 8.15<br>B<br>7.75<br>1.96<br>| 4 RXKX ce e<br>RSG RRS<br>RSIS] Lesepese}<br>6.255.55 es 3.272.75 /\ B seceecel|eeteren ORY ROS Sox] — - Iiececece RSSKK Necenece 3.39<br>| ; | T+ R Ox]SIS]SS esepese}RexSRY<pex]<br> 6.81<br>A 7.15 0.13 M C B A LAND PATTERN RECOMMENDATION<br>6.60<br>TOP VIEW °<br>8<br>R0.15 0 °<br>2.45<br>A 2.65 MAX 4X<br>1.90<br>GAGE<br>C PLANE 0.41<br>0.15<br>SEATING<br>PLANE<br>0.203<br>0.30<br>0.05 4.70 0.050 B 8 °<br>4.40 0.13 M C B A 0.45 1.60 0 °<br>0.75<br>SIDE VIEW<br>DETAIL A<br>NOTES: SCALE 2:1<br>**----- End of picture text -----**<br> - A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO−214, VARIATION AB - B DOES NOT COMPLY TO JEDEC STD. VALUE - C. ALL DIMENSIONS ARE IN MILLIMETERS - D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. - E. DIMENSIONS AND TOLERANCING AS PER ASME Y14.5−2009 - F. LAND PATTERN STANDARD: DIOM7957X241M ## **DOCUMENT NUMBER: 98AON13442G** **DESCRIPTION: SMC** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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