# Fast / Ultrafast Diode, 600 V, 2 A, Single, 1.7 V, 35 ns, 50 A

![Product image](https://novapart.co/image/farnell:3519297/)

**URL**: https://novapart.co/products/ES2J/fast-ultrafast-diode-600-v-2-a-single-17-35-ns-50
**SKU**: ES2J
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.1330
**Stock**: 1000+
**Lead Time**: 97 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 2 Pin |
| Product Range | ES2 Series |
| Qualification | - |
| Diode Case Style | DO-214AA (SMB) |
| Diode Configuration | Single |
| Forward Voltage Max | 1.7V |
| Forward Surge Current | 50A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 2A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3519297/)

**ES2A – ES2J** 

Taiwan Semiconductor 

## **2A, 50V - 600V Super Fast Surface Mount Rectifier** 

## FEATURES 

- Glass passivated chip junction 

- Ideal for automated placement 

- Low profile package 

- Super fast recovery time for high efficiency 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Switching mode converters and inverters 

- Lighting application 

## KEY PARAMETERS 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|2|A|
|VRRM|50 - 600|V|
|IFSM|50|A|
|TJMAX|150|°C|
|Package|DO-214AA (SMB)||
|Configuration|Single die||



## Pd) ROHS HALOGEN Zs COMPLIANT FREE 

- Snubber 

- Freewheeling application 

## MECHANICAL DATA 

- Case: DO-214AA (SMB) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

## **DO-214AA (SMB)** 

- Polarity: Indicated by cathode band 

- Weight: 0.090g (approximately) 

## Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~esesGseG~~|
|---|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~re~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~es~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~es~~<br>~~ee~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~es~~<br>~~ee~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~Gs~~<br>~~Gs~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~eG~~<br>~~eG~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~eG~~<br>~~eG~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~eG~~<br>~~eG~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~<br>~~eG~~<br>~~eG~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~|SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT<br>~~re~~|
|Marking code on the device<br>~~es~~|~~es ~~<br>~~es~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br>~~Gs ~~<br>~~es~~<br>~~Gs~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br> ~~eG~~<br>~~es~~<br>~~eG~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br>~~eG~~<br>~~es~~<br>~~eG~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br>~~eG~~<br>~~es~~<br>~~eG~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br>~~eG~~<br>~~es~~<br>~~eG~~|ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J<br>~~es~~|~~es~~|
|Repetitive peak reverse voltage<br>~~es~~|VRRM<br>~~es~~|50<br>~~ee~~<br>~~es~~<br>~~ee~~|100<br>~~ee~~<br>~~es~~<br>~~ee~~|150<br>~~Gs ~~<br>~~es~~|200<br> ~~eG~~<br>~~es~~|300<br>~~eG~~<br>~~es~~|400<br>~~eG~~<br>~~es~~|500<br>~~eG~~<br>~~es~~|600<br>~~es~~|V<br>~~es~~|
|Reverse voltage, total rms value<br>~~ee~~|VR(RMS)<br>~~ee~~|35<br>~~ee~~<br>~~ee~~|70<br>~~ee~~<br>~~ee~~|105<br>~~ee~~|140<br>~~ee~~|210<br>~~ee~~|280<br>~~ee~~|350<br>~~ee~~|420<br>~~ee~~|V<br>~~ee~~|
|Forward current<br>~~**e**e~~|IF<br>~~e~~|2<br>~~ee~~||||||||A|
|Surge peak forward current,<br>8.3ms single half sine-wave<br>superimposed on ratedload<br>~~**e**e~~|IFSM<br>~~e~~|50<br>~~ee~~||||||||A|
|Junction temperature<br>~~**e**e~~|TJ<br>~~e~~|- 55 to +150<br>~~ee~~<br>~~e~~||||||||°C<br>~~e~~|
|Storage temperature<br>~~es~~|TSTG<br>~~es~~|- 55 to +150<br>~~es~~||||||||°C<br>~~es~~|



1 Version: L2102 

g SEMICONDUCTOR(i **ES2A – ES2J** Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|20|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|75|°C/W|



ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

**==> picture [511 x 364] intentionally omitted <==**

**----- Start of picture text -----**<br>
PARAMETER  CONDITIONS  SYMBOL  TYP  MAX  UNIT<br>OG<br>ES2A<br>ES2B<br>-  0.95  V<br>ES2C<br>ES2D<br>Forward voltage [(1)] IF = 2A, TJ = 25°C  VF<br>ES2F<br>-  1.30  V<br>ES2G<br>ES2H<br>-  1.70  V<br>ES2J<br>Reverse current @ rated VR(2) TJ = 25°C  IR -  10  µA<br>a: TJ = 125°C  -  350  µA<br>ES2A<br>ES2B<br>25  -  pF<br>ES2C<br>ES2D<br>Junction capacitance  1MHz, VR = 4.0V  CJ<br>ES2F<br>ES2G<br>20  -  pF<br>ES2H<br>ES2J<br>IF = 0.5A, IR = 1.0A,<br>Reverse recovery time  trr -  35  ns<br>Irr = 0.25A<br>**----- End of picture text -----**<br>


## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|
|ORDERING CODE(1)|PACKAGE|PACKING|
|ES2x|DO-214AA (SMB)|3,000 / Tape & Reel|



## **Notes:** 

1.  "x" defines voltage from 50V(ES2A) to 600V(ES2J) 

2 Version: L2102 

**ES2A – ES2J** [gunn Taiwan Semiconductor 

SEMICONDUCTOR[gunn 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

**Fig.2 Typical Junction Capacitance** 

**==> picture [249 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**==> picture [246 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>ee el<br>50 en<br>RNETEee ell<br>40 PNAS PPT PET<br>POINT<br>30 ES2A-D<br>P EL PARRA EY<br>IAA TT<br>20<br>ES2F-J<br>pp SAI<br>ae | | PaOSSUTTTTH<br>10 f=1.0MHz  li Stl<br>Vsig=50mVp-p  fot TU | AUT<br>0 PE ETTTET<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


## **Fig.3 Typical Reverse Characteristics** 

## **Fig.4 Typical Forward Characteristics** 

**==> picture [509 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 100<br>Pulse Width=300μs<br>TJ=125 ° C 1% Duty Cycle<br>——— —- a<br>100<br>10 ES2F-2G<br>TJ=75 ° C ES2A-2D<br>10 LN NN ee Le ee ay ae ae<br>PY 1 Ff ff ff |<br>1<br>TJ=25 ° C<br>ES2H-2J<br>0.1 eeea ee ee 0.1 |Pfif fiff} fe -<br>20 30 40 50 60 70 80 90 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>INSTANTANEOUS REVERSE CURRENT (μA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: L2102 

**ES2A – ES2J** [gee Taiwan Semiconductor 

SEMICONDUCTOR[gee 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Fig.5 Maximum Non-Repetitive Forward Surge Current** 

**==> picture [353 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>8.3ms single half sine wave<br>50<br>40<br>STI LLIN<br>30 |PPA~~<br>20 i<br>Sell<br>10 tL<br>|<br>0<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


**Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: L2102 

% SEMICONDUCTOR[gee **ES2A – ES2J** Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**DO-214AA (SMB)** 7 ~ = " | tT A L E SUGGESTED PAD LAYOUT E ——c—_ -| [ 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 

5 Version: L2102 

**ES2A – ES2J** (i Taiwan Semiconductor 

SEMICONDUCTOR(i 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: L2102 



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- [Supplier page](https://es.farnell.com/taiwan-semiconductor/es2j-m4g/rectifier-single-600v-2a-do-214aa/dp/3519297)
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