ES1DAF
Fast / Ultrafast Diode, 200 V, 1 A, Single, 950 mV, 34 ns, 30 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:950mV; Reverse Recovery Time trr Max:34ns; Forward Surge Curr
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: DO-214AD
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 30A
- Reverse Recovery Time: 34ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.189 € |
| Current stock | 10+ |
| Lead time | 30 days |
## ES1DAF, ES1JAF ## Surface Mount Ultrafast Rectifier ## **Features** - Fast Switching Speed – Maximum Trr 35 ns - Ultra Thin Profile − Maximum Height of 1.0 mm - Glass Passivated Junction - UL Flammability 94V−0 Classification - MSL 1 - Green Mold Compound **==> picture [114 x 69] intentionally omitted <==** **----- Start of picture text -----**<br> www.onsemi.com<br>1 2<br>Cathode Anode<br>Ultrafast Rectifier<br>**----- End of picture text -----**<br> - These Devices are Pb−Free, Halogen Free Free and are RoHS Compliant ## **Specifications** **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) **==> picture [281 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> Value<br>Symbol Parameter ES1DAF ES1JAF Unit<br>VRRM Recurrent Peak Reverse Voltage 200 600 V<br>VRMS RMS Voltage 140 420 V<br>VR DC Blocking Voltage 200 600 V<br>IF(AV) Average Forward Current 1 A<br>IFSM Peak Forward Surge Current: 30 A<br>8.3 ms Single Half Sine−Wave<br>Superimposed on Rated Load<br>TJ Operating Junction Temperature −55 to +150 °C<br>Range<br>TSTG Storage Temperature Range −55 to +150 °C<br>7<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>**----- End of picture text -----**<br> **DO−214AD (SMAF) CASE 403AD** **==> picture [146 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAMS<br>$Y&Z&3<br>ES1DAF<br>Band Indicates Cathode<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Data Code (Year & Week)<br>ES1DAF = Specific Device Code<br>$Y&Z&3<br>ES1JAF<br>Band Indicates Cathode<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Data Code (Year & Week)<br>ES1JAF = Specific Device Code<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **May, 2018 − Rev. 2** **ES1JAF/D** **ES1DAF, ES1JAF** **THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**THERMAL**|**CHARACTERISTICS**(TA= 25°C unless otherwise noted)||| |---|---|---|---| |**Symbol**|**Characteristic**|**Value**|**Unit**| |�JL|Typical Thermal Characteristics, Junction−to−Lead (Note 1)|24|°C/W| |R�JA|Typical Thermal Resistance, Junction−to−Ambient (Note 2)|150|°C/W| 1. Mounted on an FR4 PCB, single−sided copper, with 48 cm[2] copper pad area. 2. Mounted on an FR4 PCB, single−sided copper, mini pad. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |VF|Forward Voltage|IF= 1 A|ES1DAF|−|−|0.95|V| ||||ES1JAF|−|−|1.70|| |IR|Reverse Current|VR= VDC||−|−|1|�A| |trr|Reverse Recovery Time|IF= 0.5 A, IR= 1 A, Irr= 0.25 A||−|−|34|ns| |CJ|Junction Capacitance|VR= 4 V, f = 1 MHz||−|15|−|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Top Mark**|**Package**|**Shipping**†| |ES1DAF|ES1DAF|DO−214AD (SMAF)<br>(Pb−Free/Halogen Free)|10000 / Tape & Reel| |ES1JAF|ES1JAF|DO−214AD (SMAF)<br>(Pb−Free/Halogen Free)|10000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **2** **ES1DAF, ES1JAF** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [212 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150<br>TC, Case Temperature ( � C)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 1. Forward Current Derating Curve** **==> picture [217 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1 1 10 100<br>VR, Reverse Bias Voltage (V)<br>, Junction Capacitance (pF)<br>J<br>C<br>**----- End of picture text -----**<br> **Figure 2. Typical Junction Capacitance** **==> picture [467 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>200 V 600 V<br>10 ° TA = 150 ° C<br>TA = 125 C 10<br>1<br>0.1 TA = 150 ° C TA = 75 ° C 1 TTAA = 125 = 75 ° C ° C<br>0.01 TA = 25 ° C 0.1 TA = 25 ° C<br>0.001 0.01<br>50 100 150 200 20 40 60 80 100<br>VR, Peak Reverse Voltage (V) Percent of Rated Peak Reverse Voltage (%)<br>A)<br>� A)<br>, Reverse Current ( �<br>IR , Reverse Current (IR<br>**----- End of picture text -----**<br> **Figure 3. Typical Reverse Characteristics** **Figure 4. Typical Reverse Characteristics** **==> picture [209 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 200 V<br>1<br>TA = 125 ° C<br>0.1 TA = 150 ° C<br>TA = 75 ° C<br>TA = 25 ° C<br>0.01<br>0 0.2 0.4 0.6 0.8 1<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 5. Typical Forward Characteristics** **==> picture [215 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 600 V<br>1<br>TA = 125 ° C<br>TA = 150 ° C<br>0.1 TA = 75 ° C<br>TA = 25 ° C<br>0.01<br>0 0.5 1 1.5 2<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 6. Typical Forward Characteristics** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMA−FL** CASE 403AD ISSUE O DATE 31 AUG 2016 **==> picture [250 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> 1.90 2.70<br>1.60 2.30<br>4.00<br>3.60<br>0.25<br>1.10<br>0.10<br>0.90<br>5.00<br>4.40<br> 0.38<br> 1.60<br>0.95 0.95<br>0.50 0.50<br> 1.60<br>**----- End of picture text -----**<br> **==> picture [207 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 2.04 2.04<br> 1.89<br> 1.24<br>**----- End of picture text -----**<br> LAND PATTERN RECOMMENDATION NOTES: - A. THIS PACKAGE DOES NOT CONFORM TO ANY STANDARDS. - B. ALL DIMENSIONS ARE IN MILLIMETERS. - C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. **==> picture [491 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NUMBER: 98AON13439G Electronic versions are uncontrolled except when<br>accessed directly from the Document Repository. Printed<br>STATUS: ON SEMICONDUCTOR STANDARD<br>versions are uncontrolled except when stamped<br>“CONTROLLED COPY” in red.<br>NEW STANDARD:<br>© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:<br>October, 2002 − Rev. 0DESCRIPTION: SMA−FL 1 PAGE 1 OF 2XXX<br>**----- End of picture text -----**<br> |**DOCUMENT NUMBER:**<br>**98AON13439G**<br>**PAGE 2 OF 2**<br>~~eT ©~~<br>~~——~~|**DOCUMENT NUMBER:**<br>**98AON13439G**<br>**PAGE 2 OF 2**<br>~~eT ©~~<br>~~——~~| |---|---| |**ISSUE**|**REVISION**<br>**DATE**| |O|RELEASED FOR PRODUCTION FROM FAIRCHILD DO214AD TO ON<br>31 AUG 2016| ||SEMICONDUCTOR. REQ. BY B. 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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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