ES1D

**ES1A – ES1J** 

Taiwan Semiconductor 

## **1A, 50V - 600V Super Fast Surface Mount Rectifier** 

## FEATURES 

- Glass passivated chip junction 

- Ideal for automated placement 

- Super fast recovery time for high efficiency 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|1|A|
|VRRM|50 - 600|V|
|IFSM|30|A|
|TJ MAX|150|°C|
|Package|DO-214AC (SMA)||
|Configuration|Single die||



- Switching mode converters and inverters 

- Lighting application 

- Snubber 

- Freewheeling application 

## MECHANICAL DATA 

- Case: DO-214AC (SMA) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 0.060g (approximately) 

## **DO-214AC (SMA)** 

## Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~ee~~|
|---|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~es~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~<br>~~ee~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~<br>~~ee~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~<br>~~ee~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~<br>~~ee~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~|SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT<br>~~es~~|
|Marking code on the device<br>~~se~~|~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~ee~~<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~ee~~<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~ee~~<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~ee~~<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~se~~|ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J<br>~~se~~|~~se~~|
|Repetitive peak reverse voltage<br>~~se~~|VRRM<br>~~se~~|50<br>~~se~~|100<br>~~se~~|150<br>~~se~~|200<br>~~se~~|300<br>~~se~~|400<br>~~se~~|500<br>~~se~~|600<br>~~se~~|V<br>~~se~~|
|Reverse voltage, total rms value<br>~~ee~~|VR(RMS)<br>~~ee~~|35<br>~~ee~~|70<br>~~ee~~|105<br>~~ee~~|140<br>~~ee~~|210<br>~~ee~~|280<br>~~ee~~|350<br>~~ee~~|420<br>~~ee~~|V<br>~~ee~~|
|Forward current|IF|1||||||||A|
|Peak forward surge current,<br>8.3ms single half sine-wave<br>superimposed on rated load<br>~~a ee~~|IFSM<br>~~ee~~|30<br>~~ee~~||||||||A<br>~~ee~~|
|Junction temperature<br>~~es~~|TJ<br>~~es~~|- 55 to +150<br>~~es~~||||||||°C<br>~~es~~|
|Storage temperature<br>~~es~~|TSTG<br>~~es~~|- 55 to +150<br>~~es~~||||||||°C<br>~~es~~|



1 Version: O2112 

**ES1A – ES1J** Taiwan Semiconductor $5 Ee$$ 

## THERMAL PERFORMANCE 

|PARAMETER|SYMBOL|TYP|UNIT|
|---|---|---|---|
|Junction-to-lead thermal resistance|RӨJL|35|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|85|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~ee~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~fs~~||CONDITIONS<br>~~fs~~|SYMBOL<br>~~fs~~|TYP<br>~~fs~~|MAX<br>~~fs~~|UNIT<br>~~fs~~|
|Forward voltage(1)|ES1A<br>ES1B<br>ES1C<br>ES1D|IF= 1A, TJ= 25°C|VF|-|0.95|V|
||ES1F<br>ES1G<br>~~|~~|||-<br>~~—|~~|1.30<br>~~|~~<br>~~|~~|V|
||ES1H<br>ES1J<br>~~|~~|||-<br>~~—|~~|1.70<br>~~|~~<br>~~|~~|V|
|Reverse current @ rated VR<br>(2)<br>~~|~~<br>~~|oH~~||TJ= 25°C|IR<br>~~ee~~|-<br>~~— |~~|5<br>~~|~~<br>~~|~~|µA|
|||TJ= 125°C<br>~~|~~||-<br>~~ee~~|100<br>~~ee~~|µA<br>~~ee~~|
|Junction capacitance<br>~~|oH~~|ES1A<br>ES1B<br>ES1C<br>ES1D<br>~~oH~~|1MHz, VR= 4.0V<br>~~|~~|CJ<br>~~ee~~|16<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~|
||ES1F<br>ES1G<br>ES1H<br>ES1J<br>~~oH~~|||18<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~|
|Reverse recovery time<br>~~| oH~~||IF= 0.5A, IR= 1.0A,<br>Irr= 0.25A<br>~~| ~~|trr<br> ~~ee~~|-<br>~~ee~~|35<br>~~ee~~|ns<br>~~ee~~|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)|PACKAGE|PACKING|
|---|---|---|
|ES1x|DO-214AC (SMA)|7,500 / Tape & Reel|



## **Notes:** 

1. “x” defines voltage from 50V(ES1A) to 600V(ES1J) 

2 Version: O2112 

6 a —_—_$_$_____ **ES1A – ES1J** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

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**----- Start of picture text -----**<br>
2<br>1<br>0<br>25 50 75 100 125 150<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.3 Typical Reverse Characteristics** 

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**----- Start of picture text -----**<br>
10<br>1 Se<br>TJ=125 ° C<br>—————<br>0.1<br>a<br>TJ=75 ° C<br>0.01 ————_ eS<br>TJ=25 ° C<br>0.001 aa==<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>**----- End of picture text -----**<br>


**==> picture [224 x 401] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>| S.A N ES1F-ES1J  La<br>Pra Hit<br>ES1A-ES1D<br>10 ai eel<br>Seeect<br>f=1.0MHz<br>Vsig=50mVp-p<br>1 anTMMemailEI<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>    Fig.4 Typical Forward Characteristics<br>10<br>ES1A-ES1D<br>NY SI<br>ES1F-ES1G<br>Of<br>1<br>f ff<br>ES1H-ES1J<br>ff f fr<br>Pulse width 300μs<br>1% duty cycle<br>0.1 F L f fs.fo<br>0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.5 Maximum Non-Repetitive Forward Surge Current** 

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**----- Start of picture text -----**<br>
40<br>30<br>20 LUTTE—™~<br>10 ieJ<br>0<br>1 10<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


**==> picture [165 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
8.3ms single half sine wave<br>EE<br>ell<br>10 100<br>**----- End of picture text -----**<br>


3 Version: O2112 

**ES1A – ES1J** (yg Taiwan Semiconductor 

SEMICONDUCTOR(yg 

## (TA = 25°C unless otherwise noted) CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: O2112 

% SEMICONDUCTOR[gee **ES1A – ES1J** Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**DO-214AC (SMA)** 

## SUGGESTED PAD LAYOUT 

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**----- Start of picture text -----**<br>
i| |<br>LL<br>**----- End of picture text -----**<br>


## MARKING DIAGRAM 

|P/N|= Marking Code|
|---|---|
|G|= Green Compound|
|YW|= Date Code|
|F|= Factory Code|



5 Version: O2112 

**ES1A – ES1J** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

6 Version: O2112 

**ES1A – ES1J** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

7 Version: O2112