# Fast / Ultrafast Diode, 150 V, 1 A, Single, 920 mV, 15 ns, 30 A
**URL**: https://novapart.co/products/ES1C/fast-ultrafast-diode-150-v-1-a-single-920-mv-15-ns
**SKU**: ES1C
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.0770
**Stock**: 1000+
**Lead Time**: 92 days (indicative)
## Description
Repetitive Reverse Voltage Vrrm Max:150V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:920mV; Reverse Recovery Time trr Max:15ns; Forward Surge Curren
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | ES1C |
| Qualification | - |
| Diode Case Style | DO-214AC (SMA) |
| Diode Configuration | Single |
| Forward Voltage Max | 920mV |
| Forward Surge Current | 30A |
| Reverse Recovery Time | 15ns |
| Average Forward Current | 1A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 150V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2453261/)
## ES1A-ES1D
## 1.0 A Ultra Fast Recovery Rectifier
## **Features**
- For Surface Mount Applications
- Glass Passivated Junction
**www.onsemi.com**
- Low Profile Package
- Easy Pick and Place
- Built−in Strain Relief
- Superfast Recovery Times for High Efficiency
- This Device is Pb−Free and is RoHS Compliant
## **Applications**
- This Product is General Usage and Suitable for Many Different Applications
**SMA CASE 403AE** (COLOR BAND DENOTES CATHODE)
**MARKING DIAGRAM**
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**----- Start of picture text -----**
$Y&Z&3
ES1X
I
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
ES1X = Specific Device Code
X = A/B/C/D
**----- End of picture text -----**
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2010 **July, 2019 − Rev. 4**
**ES1D/D**
**ES1A−ES1D**
**ABSOLUTE MAXIMUM RATINGS** TA = 25 ° C Unless Otherwise Noted
|**ABSOLUT**|**E MAXIMUM RATINGS**TA= 25°C Unless Otherwise Noted||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||||**Units**|
|||**1A**|**1B**|**1C**|**1D**||
|VRRM|Maximum Repetitive Reverse Voltage|50|100|150|200|V|
|IF(AV)|Average Rectified Forward Current, @ TA= 120°C|1.0||||A|
|IFSM|Non−repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave|30||||A|
|Tstg|Storage Temperature Range|−50 to +150||||°C|
|TJm|Operating Junction Temperature|−50 to +150||||°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|PD|Power Dissipation|1.47|W|
|RθJA|Thermal Resistance, Junction to Ambient*|85|°C/W|
|R�JL|Thermal Resistance, Junction to Lead*|35|°C/W|
*Device mounted on FR−4 PCB 0.013 mm.
## **ELECTRICAL CHARACTERISTICS** TJ = 25 ° C Unless Otherwise Noted
|**ELECTRI**|**CAL CHARACTERISTICS**TJ= 25°C Unless Otherwise Noted||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Device**||||**Units**|
|||**1A**|**1B**|**1C**|**1D**||
|VF|Forward Voltage @ 1.0 A|0.92||||V|
|trr|Reverse Recovery Time
IF= 0.5 A, IR= 1.0 A, IRR= 0.25 A|15||||ns|
|IR|Reverse Current
@ rated VR
TA= 25�C
TA= 100�C|5.0
100||||�A|
|CT|Total Capacitance
VR= 4.0 V, f = 1.0 MHz|7.0||||pF|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **PACKAGE MARKING AND ORDERING INFORMATION** TBD
|**Device Marking**|**Device**|**Package**|**Quantity**†|
|---|---|---|---|
|ESD1|ESD1|SMA|7500 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**www.onsemi.com**
**2**
**ES1A−ES1D**
## **TYPICAL CHARACTERISTICS**
**==> picture [207 x 155] intentionally omitted <==**
**----- Start of picture text -----**
1.5
1.25
1
0.75 RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
0.5
ON 0.2 x 0.2”
(5.0 x 5.0 mm)
0.2 5 COPPER PAD AREAS
0
0 25 50 75 100 125 150 175
Ambient Temperature [ � C]
[A]
F
Average Rectified Forward Current, I
**----- End of picture text -----**
**==> picture [201 x 153] intentionally omitted <==**
**----- Start of picture text -----**
10
1
0.1
0.01
TA = 25 ° C
Pulse Width = 300 � s
2% Duty Cycle
0.001
0.4 0.6 0.8 1 1.2 1.4
Forward Voltage, VF [V]
[A]
F
Forward Current, I
**----- End of picture text -----**
**Figure 1. Forward Current Derating Curve**
**Figure 2. Forward Voltage Characteristics**
**==> picture [207 x 158] intentionally omitted <==**
**----- Start of picture text -----**
30
25
20
15
10
5
0
1 2 5 10 20 50 100
Number of Cycles at 60 Hz
[A]
FSM
Peak Forward Surge Current, I
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**==> picture [203 x 156] intentionally omitted <==**
**----- Start of picture text -----**
1000
100
TA = 125 ° C
10
TA = 75 ° C
1
TA = 25 ° C
0.1
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage [%]
A]
�
[
R
Reverse Current, I
**----- End of picture text -----**
**Figure 3. Non−Repetitive Surge Current**
**Figure 4. Reverse Current vs Reverse Voltage**
**==> picture [204 x 153] intentionally omitted <==**
**----- Start of picture text -----**
14
12
10
8
6
4
2
0
0.1 1 10 100
Reverse Voltage, VR [V]
[pF]
T
Total Capacitance, C
**----- End of picture text -----**
**Figure 5. Total Capacitance**
**www.onsemi.com**
**3**
**ES1A−ES1D**
## **TYPICAL CHARACTERISTICS** (continued)
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**----- Start of picture text -----**
50 � 50 �
NONINDUCTIVE NONINDUCTIVE
(−)
DUT
Pulse
50 V Generator
(approx) (Note 2)
(+)
50 � OSCILLOSCOPE
NONINDUCTIVE (Note 1)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 M � 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 � .
**----- End of picture text -----**
**==> picture [179 x 143] intentionally omitted <==**
**----- Start of picture text -----**
trr
+0.5 A
0
−0.25 A
−1.0 A
1.0 cm SET TIME BASE FOR
5/ 10 ns/ cm
**----- End of picture text -----**
**Figure 6. Reverse Recovery Time Characterstic and Test Circuit Diagram**
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SMA** CASE 403AE ISSUE O
**==> picture [493 x 637] intentionally omitted <==**
**----- Start of picture text -----**
DATE 31 AUG 2016
5.60
B B 0.13 M C B A
4.80
2.65
2.95 1.65
B 1.75
2.50 1.20
4.30
4.75
A B
(oiLA 4.00 s Eeetoo
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
—
2.20
NOTES:
1.90
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.203 0.30 B DOES NOT COMPLY JEDEC STANDARD
B 0.050 0.05 VALUE.
C C. ALL DIMENSIONS ARE IN MILLIMETERS.
2.05 0.13 M C B A D. DIMENSIONS ARE EXCLUSIVE OF
1.95 A Se| coOO} | | n BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
SIDE VIEW
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
8 ° E. LAND PATTERN STD. DIOM5025X231M
0 °
R0.15 4X
+f
GAGE PLANE
0.45
0.41
0.15
TAL
1.52
8 ° 0.75
0 °
ait
DETAIL A
SCALE 20 : 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13440G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SMA PAGE 1 OF 1
ee
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
**----- End of picture text -----**
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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