# Fast / Ultrafast Diode, 100 V, 1 A, Single, 920 mV, 15 ns, 30 A

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![Product image](https://novapart.co/image/farnell:2438215/)

**URL**: https://novapart.co/products/ES1B/fast-ultrafast-diode-100-v-1-a-single-920-mv-15-ns
**SKU**: ES1B
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.0720
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

The ONSEMI ES1B is a single fast recovery rectifier diode utilizing a glass-passivated semiconductor die configuration housed in a low-profile DO-214AC (SMA) surface-mount package. Engineered for high-efficiency power conversion topologies, this 2-pin device delivers a repetitive peak reverse voltage rating of 100 V and an average rectified forward current of 1.0 A. It features an exceptionally fast reverse recovery time (trr) of 15 ns, making it well-suited for high-frequency switching applications where minimizing switching losses and reducing reverse recovery current spikes are critical for optimal thermal and electrical performance.

Key electrical parameters include a maximum forward voltage drop of 920 mV at 1.0 A and a robust non-repetitive peak forward surge current handling capability of up to 30 A based on an 8.3 ms single half-sine-wave. The component operates across a wide junction temperature range of -50°C to +150°C, supported by a thermal resistance of 85°C/W from junction to ambient when mounted on standard FR-4 printed circuit board layouts. The SMA package incorporates a built-in strain relief structure and facilitates automated pick-and-place assembly, ensuring mechanical reliability in dense surface-mount electronics manufacturing.

This ultrafast diode is typically deployed in high-frequency power supplies, DC-DC buck and boost converters, freewheeling diode circuits, and general-purpose rectification tasks in industrial and consumer electronics. Its low capacitance profile (7.0 pF at 4.0 V, 1 MHz) and rapid turn-off characteristics mitigate electromagnetic interference (EMI) and power dissipation in high-speed switching loops. The ES1B meets stringent environmental standards, adhering to lead-free construction criteria while providing dependable operational stability under continuous thermal stress up to its maximum rated limits.

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | ES1B |
| Qualification | - |
| Diode Case Style | DO-214AC (SMA) |
| Diode Configuration | Single |
| Forward Voltage Max | 920mV |
| Forward Surge Current | 30A |
| Reverse Recovery Time | 15ns |
| Average Forward Current | 1A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2438215/)

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ES1A - ES1D** 

## **Features** 

- For surface mount applications. 

- Glass passivated junction. 

- Low profile package. 

- Easy pick and place. 

- Built-in strain relief. 

- **SMA/DO-214AC** 

- • Superfast recovery times for COLOR BAND DENOTES CATHODE high efficiency. 

## **Fast Rectifiers** 

**Absolute Maximum Ratings*** TA = 25°C unless otherwise noted 

|**Absolute Maximum Ratings***TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|
|---|---|---|---|---|
|**Parameter**|**Value**||||
||**1A**|**1B**|**1C**|**1D**|
|Maximum Repetitive Reverse Voltage|50|100|150|200|
|Average Rectified Forward Current, @ TA=120°C|1.0||||
|Non-repetitive Peak Forward Surge Current<br>8.3ms SingleHalf-Sine-Wave|30||||
|Storage Temperature Range|-50 to +150||||
|Operating Junction Temperature|-50 to +150||||



*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

## **Thermal Characteristics** 

|**Parameter**|**Value**|
|---|---|
|Power Dissipation|1.47|
|Thermal Resistance, Junction to Ambient*|85|
|Thermal Resistance, Junction to Lead*|35|



- *Device mounted on FR-4 PCB 0.013 mm. 

## **Electrical Characteristics** 

TA = 25°C unless otherwise noted 

|**Electrical Characteristics**TAA = 25°C unless otherwise noted|= 25°C unless otherwise noted|= 25°C unless otherwise noted|= 25°C unless otherwise noted|= 25°C unless otherwise noted|
|---|---|---|---|---|
|**Parameter**|**Device**||||
||**1A**|**1B**|**1C**|**1D**|
|Forward Voltage @ 1.0 A|0.92||||
|Reverse Recovery Time<br>IF= 0.5 A,IR= 1.0 A,IRR= 0.25 A|15||||
|Reverse Current  @ rated VR<br>TA= 25°C<br>TA= 100°C|5.0<br>100||||
|Total Capacitance<br>VR= 4.0V,f = 1.0MHz|7.0||||



2010 Fairchild Semiconductor Corporation 

ES1A-ES1D, Rev. C1 

## **Typical Characteristics** 

**==> picture [404 x 304] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.5 10<br>1.25<br>1<br>1<br>0.75  RESISTIVE OR 0.1<br> INDUCTIVE LOAD<br> P.C.B. MOUNTED<br>0.5 ON 0.2 x 0.2"<br>(5.0 x 5.0 mm) 0.01<br>0.25 COPPER PAD AREAS T   = 25  C A  º<br>  Pulse Width = 300 µ s<br>  2% Duty Cycle<br>0 0 25 50 75 100 125 150 175 0.0010.4  0.6  0.8  1  1.2  1.4<br>Ambient Temperature [ºC] Forward Voltage, VF [V]<br>Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics<br>30 1000<br>25<br>20 100  T   = 125  CA  º<br>15 10  T   = 75  CA  º<br>10<br>1<br>5  T   = 25  C   A  º<br>0 0.1<br>1 2 5 10 20  50 100 0  20 40 60 80 100 120 140<br>Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage [%]<br>Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage<br> [A]<br>F<br> [A]<br>F<br>Forward Current, I<br>Average Rectified Forward Current, I<br> [A]<br>FSM<br> [uA]<br>R<br>Reverse Current, I<br>Peak Forward Surge Current, I<br>**----- End of picture text -----**<br>


**==> picture [375 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0.1 1 10 100<br>Reverse Voltage, VR [V]<br>Figure 5. Total Capacitance<br>50Ω 50Ω   trr<br>NONINDUCTIVE NONINDUCTIVE +0.5A<br>(-)<br>DUT<br> 0<br>Pulse<br>50V Generator<br>-0.25A<br>(approx) (Note 2)<br>50Ω OSCILLOSCOPE (+)<br>NONINDUCTIVE<br>(Note 1)<br>NOTES: -1.0A<br>1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.   1.0cm     SET TIME BASE FOR<br>2. Rise time = 10 ns max; Source impedance = 50 ohms.   5/ 10 ns/ cm<br>Reverse Recovery Time Characterstic and Test Circuit Diagram<br> [pF]<br>T<br>Total Capacitance, C<br>**----- End of picture text -----**<br>


2010 Fairchild Semiconductor Corporation 

ES1A-ES1D, Rev. C1 

**==> picture [548 x 601] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.60<br>B B 0.13 [M] C B A<br>4.80<br> 2.65<br>1.65<br>[2.95] B  1.75<br>2.50 1.20<br> 4.30<br>4.75<br>A B<br>4.00<br>LAND PATTERN RECOMMENDATION<br>TOP VIEW<br> 2.50 MAX<br>A<br>[2.20] NOTES:<br>1.90<br>  A.   EXCEPT WHERE NOTED, CONFORMS<br>         TO JEDEC DO214 VARIATION AC.<br>B 0.2030.050 [0.30] 0.05         VALUE.BB DOES NOT COMPLY JEDEC STANDARD<br>C   C.   ALL DIMENSIONS ARE IN MILLIMETERS.<br>[2.05] 0.13 [M] C B A   D.  DIMENSIONS ARE EXCLUSIVE OF<br>1.95<br>        BURRS, MOLD FLASH AND TIE BAR<br>        PROTRUSIONS.<br>SIDE VIEW<br>  E.  DIMENSIONS AND TOLERANCE AS<br>       PER ASME Y14.5-2009.<br>[8°]   E.  LAND PATTERN STD. DIOM5025X231M<br>0°   F.  DRAWING FILENAME: MKT-DO214ACrev2<br> R0.15 4X<br>GAGE PLANE<br>0.45<br>[0.41]<br>0.15<br>[1.52]<br>[8°] 0.75<br>0°<br>DETAIL A<br>SCALE 20 : 1<br>**----- End of picture text -----**<br>


## LAND PATTERN RECOMMENDATION 

- A.   EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO214 VARIATION AC. 

- VALUE.BB DOES NOT COMPLY JEDEC STANDARD 

- C.   ALL DIMENSIONS ARE IN MILLIMETERS. 

- F.  DRAWING FILENAME: MKT-DO214ACrev2 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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© Semiconductor Components Industries, LLC 

www.onsemi.com 

**www.onsemi.com** 

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