# Transistor, NPN, 50 V, 0.1 A, 150 DEG C, 0.357 W, SOT-563, 180 MHz ![Product image](https://novapart.co/image/farnell:3615341/) **URL**: https://novapart.co/products/EMX2DXV6T5G/transistor-npn-50-v-01-a-150-deg-c-0357-w-sot-563 **SKU**: EMX2DXV6T5G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0530 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 6Pins | | Power Dissipation | 357mW | | Dc Current Gain Hfe | 120hFE | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 180MHz | | Transistor Case Style | SOT-563 | | Dc Current Gain Hfe Min | 120hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3615341/) **DATA SHEET www.onsemi.com** ## Dual NPN General Purpose Amplifier Transistor ## EMX2DXV6T5 This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT−563 package which is designed for low power surface mount applications, where board space is at a premium. ## **Features** - Reduces Board Space - High hFE, 210−460 (Typical) - Low VCE(sat), < 0.5 V - These are Pb−Free Devices ## **MAXIMUM RATINGS** (TA = 25 ° C) |**MAXIMUM RATINGS**(TA= 25°C)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|V(BR)CBO|60|Vdc| |Collector-Emitter Voltage|V(BR)CEO|50|Vdc| |Emitter-Base Voltage|V(BR)EBO|7.0|Vdc| |Collector Current − Continuous|IC|100|mAdc| ## **THERMAL CHARACTERISTICS** |**Characteristic**
**(One Junction Heated)**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Total Device Dissipation
TA= 25°C
Derate above 25°C|PD|357 (Note 1)
2.9 (Note 1)|mW
mW/°C| |Thermal Resistance,
Junction-to-Ambient|R�JA|350 (Note 1)|°C/W| |**Characteristic**
**(Both Junctions Heated)**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation
TA= 25°C
Derate above 25°C|PD|500 (Note 1)
4.0 (Note 1)|mW
mW/°C| |Thermal Resistance,
Junction-to-Ambient|R�JA|250 (Note 1)|°C/W| |Junction and Storage
Temperature Range|TJ, Tstg|−55 to +150|°C| ## **DUAL NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT** **==> picture [127 x 119] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
Q2
Q1
(4) (5) (6)
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## **MARKING DIAGRAM** 6 **SOT−563** 3R M � **CASE 463A** � 1 **STYLE 2** 1 3R = Specific Device Code M = Month Code � = Pb−Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |EMX2DXV6T5G|SOT−563
(Pb−Free)|8000/Tape & Reel| |EMX2DXV6T1G|SOT−563
(Pb−Free)|4000/Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2005 **April, 2022 − Rev. 3** **EMX2DXV6T5/D** **EMX2DXV6T5** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Collector-Base Breakdown Voltage
(IC= 50�Adc, IE= 0)|V(BR)CBO|60|−|−|Vdc| |Collector-Emitter Breakdown Voltage
(IC= 1.0 mAdc, IB= 0)|V(BR)CEO|50|−|−|Vdc| |Emitter-Base Breakdown Voltage
(IE= 50�Adc, IE= 0)|V(BR)EBO|7.0|−|−|Vdc| |Collector-Base Cutoff Current
(VCB= 60 Vdc, IE= 0)|ICBO|−|−|0.5|�A| |Emitter-Base Cutoff Current
(VEB= 7.0 Vdc, IB= 0)|IEBO|−|−|0.5|�A| |Collector-Emitter Saturation Voltage (Note 2)
(IC= 50 mAdc, IB= 5.0 mAdc)|VCE(sat)|−|−|0.4|Vdc| |DC Current Gain (Note 3)
(VCE= 6.0 Vdc, IC= 1.0 mAdc)|hFE|120|−|560|−| |Transition Frequency
(VCE= 12 Vdc, IC= 2.0 mAdc, f = 30 MHz)|fT|−|180|−|MHz| |Output Capacitance
(VCB= 12 Vdc, IC= 0 Adc, f = 1 MHz)|COB|−|2.0|−|pF| 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width ≤ 300 � s, D.C. ≤ 2%. **www.onsemi.com** **2** **EMX2DXV6T5** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [485 x 577] intentionally omitted <==** **----- Start of picture text -----**
60 1000
TA = 25°C 160 �A T A = 25°C VCE = 10 V
50 140 �A T A = 75°C
40 120 �A
TA = -25°C
100 �A
30 100
80 �A
20 60 �A
40 �A
10 IB = 20 �A
0 10
0 2 4 6 8 0.1 1 10 100
VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. IC − VCE Figure 2. DC Current Gain
2 900
TA = 25°C 800
1.5 700
600
500
1
400
TA = 25°C
300
VCE = 5 V
0.5
200
100
00.01 0.1 1 10 100 00.2 0.5 1 5 10 20 40 60 80 100 150 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. On Voltage
20 7
6
18
5
16
4
14
3
12
2
10 1
0 1 2 3 4 0 10 20 30 40
VEB (V) VCB (V)
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
COLLECTOR VOLTAGE (mV)
VCE, COLLECTOR‐EMITTER VOLTAGE (V)
Cob, CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
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**Figure 5. Capacitance** **Figure 6. Capacitance** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [314 x 39] intentionally omitted <==** **----- Start of picture text -----**
SOT−563−6 1.60x1.20x0.55, 0.50P
CASE 463A
ISSUE J
DATE 15 FEB 2024
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**==> picture [481 x 173] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
S T YL E 7: S T YL E 8 S T YL E 9:
P I N 1. C ATH OD E P I N 1 , DR AI N P I N 1 , SOURC E 1 O55
2, A NOD E 2, DR AI N 2, G ATE 1
XXM
3. C ATH OD E 3. G ATE 3, DR AI N 2
4. C ATH OD E 4. SOURC E 4. SOURC E 2 1
5, A NOD E 5, DR AI N 5, G ATE 2 —
6. C ATH OD E 6. DR AI N 6. DR AI N 1 XX = Specific Device Code
M = Month Code
. = Pb−Free Package
S T YL E 1 0: S T YL E 1
P I N 1 . C ATH OD E 1 P I N 1 . E M ITTE R 2 *This information is generic. Please refer to
2, N/C 2, B A S E 2 device data sheet for actual part marking.
3. C ATH OD E 2 3, COLL E C T OR 1 Pb−Free indicator, “G” or microdot “ . ”, may
5.4. N/C A NOD E 2 4.5. E BM AITTE S E 1 R 1 or may not be present. Some products may
6. A NOD E 1 6. COLL E C T OR 2 not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON11126D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−563−6 1.60x1.20x0.55, 0.50P PAGE 1 OF 1
**----- End of picture text -----**
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