# Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 100 mA, 0.21 (Ratio)

![Product image](https://novapart.co/image/farnell:3617055/)

**URL**: https://novapart.co/products/EMD4DXV6T5G/bipolar-pre-biased-digital-transistor-npn-and-pnp
**SKU**: EMD4DXV6T5G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors
**Price**: €0.0570
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 5 Pin |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN and PNP Complement |
| Dc Current Gain Hfe Min | 80hFE |
| Resistor Ratio, R1 / R2 | 0.21(Ratio) |
| Operating Temperature Max | 150°C |
| Digital Transistor Polarity | NPN and PNP Complement |
| Continuous Collector Current | 100mA |
| Continuous Collector Current Ic | 100mA |
| Collector Emitter Voltage Max Npn | 50V |
| Collector Emitter Voltage Max Pnp | 50V |
| Collector Emitter Voltage V(Br)Ceo | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3617055/)

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## Dual Bias Resistor Transistors 

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(3) (2) (1)<br>R1 R2<br>Q1<br>Q2<br>R2 R1<br>(4) (5) (6)<br>6<br>&<br>1<br>SOT−563<br>CASE 463A<br>STYLE 1<br>**----- End of picture text -----**<br>


## NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD4DXV6 

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. 

## **MARKING DIAGRAM** 

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U7 M<br>1<br>U7 =  Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


## **Features** 

- Simplifies Circuit Design 

- Reduces Board Space 

- Reduces Component Count 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

(Note: Microdot may be in either location) 

- These are Pb−Free Devices 

## **ORDERING INFORMATION** 

**MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) 

|**Device**<br>**Package**|**Package**<br>**Shipping**†|
|---|---|
|EMD4DXV6T1G<br>SOT−563<br>(Pb−Free)|SOT−563<br>(Pb−Free)<br>4000 / Tape &<br>Reel|
|EMD4DXV6T5G<br>SOT−563<br>(Pb−Free)|SOT−563<br>(Pb−Free)<br>8000 / Tape &<br>Reel|
|NSVEMD4DXV6T1G<br>SOT−563<br>(Pb−Free)|SOT−563<br>(Pb−Free)<br>4000 / Tape &<br>Reel|



|**MAXIMUM RATINGS **(TA = 25A = 25= 25°C unless otherwise noted, common for Q11<br>and Q2, − minus sign for Q1 (PNP) omitted)2, − minus sign for Q1 (PNP) omitted), − minus sign for Q1 (PNP) omitted)1 (PNP) omitted)(PNP) omitted)||**Device**<br>**Package**<br>**Shipping**†<br>EMD4DXV6T1G<br>SOT−563<br>4000 / Tape &|
|---|---|---|
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**||EMD4DXV6T1G<br>SOT−563<br>(Pb−Free)<br>4000 / Tape &<br>Reel|
|Collector-Base Voltage<br>VCBO<br>50<br>Vdc||EMD4DXV6T5G<br>SOT−563<br>8000 / Tape &|
|Collector-Emitter Voltage<br>VCEO<br>50<br>Vdc||(Pb−Free)<br>Reel|
|Collector Current<br>IC<br>100<br>mAdc||NSVEMD4DXV6T1G<br>SOT−563<br>4000 / Tape &|
|**THERMAL CHARACTERISTICS**||(Pb−Free)<br>Reel|
|**Characteristic**<br>**(One Junction Heated)**<br>**Symbol**<br>**Max**<br>**Unit**<br>Total Device Dissipation<br>TA= 25°C (Note 1)<br>Derate above 25°C (Note 1)<br>PD<br>357<br>2.9<br>mW<br>mW/°C<br>Thermal Resistance,<br>Junction-to-Ambient (Note 1)<br>R JA<br>350<br>°C/W<br>Total Device Dissipation<br>TA= 25°C (Note 1)<br>Derate above 25°C<br>PD<br>500<br>4.0<br>mW<br>mW/°C<br>Thermal Resistance,<br>Junction-to-Ambient (Note 1)<br>R JA<br>250<br>°C/W<br>Junction and Storage Temperature<br>TJ, Tstg<br>−55 to +150<br>°C<br>~~es~~<br>~~ee ee~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~PT~~<br>~~ee ee eee~~<br>~~es~~|†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.<br>1. **DISCONTINUED:**This device is not<br>recommended for new design. Please contact<br>your**onsemi**representative for information.<br>The most current information on this device may<br>be available on www.onsemi.com<br>.<br>**DISCONTINUED**(Note 1)<br>SOT−563<br>(Pb−Free)<br>NSVEMD4DXV6T5G<br>8000 / Tape &<br>Reel<br>ee<br>~~—~~||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 board with minimum mounting pad. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **March, 2025 − Rev. 4** 

**EMD4DXV6/D** 

## **EMD4DXV6** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA = 25A = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA = 25A = 25= 25°C unless otherwise noted)|
|---|---|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Q1 TRANSISTOR: PNP**<br>~~a~~||
|**OFF CHARACTERISTICS**||
|Collector-Base Cutoff Current (VCB= 50 V, IE= 0)<br>ICBO<br>−<br>−<br>100|nAdc|
|Collector-Emitter Cutoff Current (VCB= 50 V, IB= 0)<br>ICEO<br>−<br>−<br>500|nAdc|
|Emitter-Base Cutoff Current (VEB= 6.0, IC= 5.0 mA)<br>IEBO<br>−<br>−<br>0.2|mAdc|
|**ON CHARACTERISTICS**||
|Collector-Base Breakdown Voltage (IC= 10 A, IE= 0)<br>V(BR)CBO<br>50<br>−<br>−<br>Vdc<br>Collector-Emitter Breakdown Voltage (IC= 2.0 mA, IB= 0)<br>V(BR)CEO<br>50<br>−<br>−<br>Vdc<br>~~**a**~~||
|DC Current Gain (VCE= 10 V, IC= 5.0 mA)<br>hFE<br>80<br>140<br>−<br>~~a~~||
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.3 mA)<br>VCE(SAT)<br>−<br>−<br>0.25<br>Vdc<br>~~a~~||
|Output Voltage (on) (VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k )<br>VOL<br>−<br>−<br>0.2<br>Vdc<br>~~eG~~||
|Output Voltage (off) (VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k )<br>VOH<br>4.9<br>−<br>−<br>Vdc<br>Input Resistor<br>R1<br>7.0<br>10<br>13<br>k<br>Resistor Ratio<br>R1/R2<br>0.17<br>0.21<br>0.25<br>~~GG~~<br>~~a~~<br>~~GO~~<br>~~GG~~||
|**Q2 TRANSISTOR: NPN**||
|**OFF CHARACTERISTICS**||
|Collector-Base Cutoff Current (VCB= 50 V, IE= 0)<br>ICBO<br>−<br>−<br>100|nAdc|
|Collector-Emitter Cutoff Current (VCB= 50 V, IB= 0)<br>ICEO<br>−<br>−<br>500|nAdc|
|Emitter-Base Cutoff Current (VEB= 6.0, IC= 0 mA)<br>IEBO<br>−<br>−<br>0.1|mAdc|
|**ON CHARACTERISTICS**||
|Collector-Base Breakdown Voltage (IC= 10 A, IE= 0)<br>V(BR)CBO<br>50<br>−<br>−<br>Vdc<br>Collector-Emitter Breakdown Voltage (IC= 2.0 mA, IB= 0)<br>V(BR)CEO<br>50<br>−<br>−<br>Vdc<br>DC Current Gain (VCE= 10 V, IC= 5.0 mA)<br>hFE<br>80<br>140<br>−<br>Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.3 mA)<br>VCE(SAT)<br>−<br>−<br>0.25<br>Vdc<br>Output Voltage (on) (VCC= 5.0 V, VB= 3.5 V, RL= 1.0 k )<br>VOL<br>−<br>−<br>0.2<br>Vdc<br>~~a~~<br>~~**a**a~~<br>~~Gs~~<br>~~a~~||
|Output Voltage (off) (VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k )<br>VOH<br>4.9<br>−<br>−<br>Vdc<br>~~GO~~||
|Input Resistor<br>R1<br>32.9<br>47<br>61.1<br>k<br>~~eG~~||
|Resistor Ratio<br>R1/R2<br>0.8<br>1.0<br>1.2<br>~~GG~~||
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product||
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.||



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250 | | | | | | fT<br>200<br>Pp of | |<br>P| | | | |PT<br>150 pop |<br>Ne<br>100<br>pore| fteeofNETe<br>a a  eee R JA = 833°C/W<br>50 ee<br>eee<br>fh 1 i 0 | i 50 | 100 | IN 150<br>TA, AMBIENT TEMPERATURE (°C)<br>PD, POWER DISSIPATION (MILLIWATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Derating Curve** 

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**EMD4DXV6** 

## **TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6 PNP TRANSISTOR** 

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1 180<br>I C /I B = 10 TA ° C 160 VCE = 10 V 25°C TA °C<br>Sa 140 ane e ee<br>0.1 ——— 75°C 25°C 120 ZN -25°C<br>ssC O eR<br>100<br>S S 80 A<br>0.01 60<br>— ———<br>SSS SSS 40<br>20<br>Se<br>a<br>0.001 0<br>0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain<br>4.5 100<br>4 f = 1 MHz TA °C 25°C<br>e lE e  = 0 V EE<br>3.5 NER TA = 25°C | — ——<br>3 YT ETT | | | | Ate -25°C | |<br>2.5 PNT | tt tt tt dd |AK| VA | |ft<br>WSS 10 I Z<br>2<br>P| | Pree SE——————<br>1.5<br>pt tte et PE a<br>1 SERRE ee<br>0.5 FTE Eee W T VO = 5 V<br>| ee |<br>0<br>PT ETT Ete Ee te yl | |<br>0 2 4 6 8 10 15 20 25 30 35 40 45 50 1 0 2 4 6 8 10<br>VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Output Capacitance** 

**Figure 5. Output Current versus Input Voltage** 

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10<br>VO = 0.2 V 25°C<br>= te | ;ff —<br>TA °C<br>4a 75°C<br>1 Wr<br>2==SSS===—<br>a ee eee<br>a<br>pot tT<br>0.1 a<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 6. Input Voltage versus Output Current** 

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**EMD4DXV6** 

## **TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6 NPN TRANSISTOR** 

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10 EO IC/IB = 10 TA = −25 ° C ES HANT7>S7=S] 1000 a VCE = 10 V |<br>25 ° C 75 ° C T A  = 75 ° C<br>Pf ee tt<br>1 25 ° C<br>| | ff EE −25 ° C<br>100<br>SS| seeAe a SSS aSSSa a eeee|S<br>0.1<br>SeeA = EH SEEGHE<br>a es<br>0.01 Ge ee eeeee |LL<br>0 20 40 60 80 101 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain<br>1 100<br>Nit | | ft ff f = 1 MHz =—— a 75 ° C  —————— 25 ° C<br>0.8 TlEA = 0 A = 25 ° C 10 TA = −25 ° C<br>SSEN SSeS<br>0.6 1<br>PINT Tt tt tt es)oo<br>0.4 0.1<br>= SS<br>a<br>0.2 0.01<br>VO = 5 V<br>0 0.001 a<br>0 10 20 30 40 50 0 2 4 6 8 10<br>VR, REVERSE BIAS VOLTAGE (VOLTS) Vin,  INPUT VOLTAGE (VOLTS)<br>Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage<br>100<br>————————_—_———— VO = 0.2 V<br>—— TA = −25 ° C =<br>25 ° C<br>ee ee ee ee ee —<br>10 Sees 75°C<br>La | TT FT Tt]<br>1<br>fo | | | | | | | |<br>————————<br>Es es Ss<br>0.1 EEE<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>(VOLTS)<br>MAXIMUM COLLECTOR VOLTAGE<br>DC CURRENT GAIN (NORMALIZED)<br>CE(sat),  FE,<br>V h<br>CAPACITANCE (pF)<br>ob,<br>C<br> COLLECTOR CURRENT (mA)<br>IC,<br>INPUT VOLTAGE (VOLTS)<br>in,<br>V<br>**----- End of picture text -----**<br>


**Figure 11. Input Voltage vs. Output Current** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−563−6 1.60x1.20x0.55, 0.50P<br>CASE 463A<br>ISSUE J<br>DATE 15 FEB 2024<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>S T YL E 7: S T YL E 8 S T YL E 9:<br>P I N 1. C ATH OD E P I N 1 , DR AI N P I N 1 , SOURC E 1 O55<br>2, A NOD E 2, DR AI N 2, G ATE 1<br>XXM<br>3. C ATH OD E 3. G ATE 3, DR AI N 2<br>4. C ATH OD E 4. SOURC E 4. SOURC E 2 1<br>5, A NOD E 5, DR AI N 5, G ATE 2 —<br>6. C ATH OD E 6. DR AI N 6. DR AI N 1 XX = Specific Device Code<br>M = Month Code<br>. = Pb−Free Package<br>S T YL E 1 0: S T YL E 1<br>P I N 1 . C ATH OD E 1 P I N 1 . E M ITTE R 2 *This information is generic. Please refer to<br>2, N/C 2, B A S E 2 device data sheet for actual part marking.<br>3. C ATH OD E 2 3, COLL E C T OR 1 Pb−Free indicator, “G” or microdot “ . ”, may<br>5.4. N/C A NOD E 2 4.5. E BM AITTE S E 1 R 1 or may not be present. Some products may<br>6. A NOD E 1 6. COLL E C T OR 2 not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON11126D Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−563−6 1.60x1.20x0.55, 0.50P PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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