# Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm ![Product image](https://novapart.co/image/farnell:2724471/) **URL**: https://novapart.co/products/EMD4DXV6T1G/bipolar-pre-biased-digital-transistor-npn-and-pnp **SKU**: EMD4DXV6T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors **Price**: €0.0580 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resis ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6 Pin | | Product Range | - | | Qualification | - | | Power Dissipation | 500mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN and PNP Complement | | Transistor Case Style | SOT-563 | | Base Input Resistor R1 | 10kohm | | Dc Current Gain Hfe Min | 80hFE | | Base Emitter Resistor R2 | 47kohm | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max Npn | 50V | | Collector Emitter Voltage Max Pnp | 50V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724471/) **DATA SHEET www.onsemi.com** ## Dual Bias Resistor Transistors ## NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network EMD4DXV6 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. ## **Features** - Simplifies Circuit Design - Reduces Board Space - Reduces Component Count - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These are Pb−Free Devices **MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Collector-Base Voltage|VCBO|50|Vdc| |Collector-Emitter Voltage|VCEO|50|Vdc| |Collector Current|IC|100|mAdc| |**THERMAL CHARACTERISTICS**|||| |**Characteristic**
**(One Junction Heated)**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation
TA= 25°C (Note 1)
Derate above 25°C (Note 1)|PD|357
2.9|mW
mW/°C| |Thermal Resistance,
Junction-to-Ambient (Note 1)|R�JA|350|°C/W| |Total Device Dissipation
TA= 25°C (Note 1)
Derate above 25°C|PD|500
4.0|mW
mW/°C| |Thermal Resistance,
Junction-to-Ambient (Note 1)|R�JA|250|°C/W| |Junction and Storage Temperature|TJ, Tstg|−55 to +150|°C| **==> picture [192 x 175] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
R1 R2
Q1
Q2
R2 R1
(4) (5) (6)
6
1
SOT−563
CASE 463A
STYLE 1
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## **MARKING DIAGRAM** **==> picture [147 x 89] intentionally omitted <==** **----- Start of picture text -----**
U7 M �
�
1
U7 = Specific Device Code
M = Date Code
� = Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
## **ORDERING INFORMATION** |**Device**
**Pac**|**kage**
**Shipping**†| |---|---| |EMD4DXV6T1G
SO
(Pb|T−563
−Free)
4000 / Tape &
Reel| |EMD4DXV6T5G
SO
(Pb|T−563
−Free)
8000 / Tape &
Reel| |NSVEMD4DXV6T5G
SO
(Pb|T−563
−Free)
8000 / Tape &
Reel| |NSVEMD4DXV6T1G
SO
(Pb|T−563
−Free)
4000 / Tape &
Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 board with minimum mounting pad. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **April, 2022 − Rev. 3** **EMD4DXV6/D** ## **EMD4DXV6** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise not|ed)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**Q1 TRANSISTOR: PNP**
**OFF CHARACTERISTICS**|||||| |Collector-Base Cutoff Current (VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc| |Collector-Emitter Cutoff Current (VCB= 50 V, IB= 0)|ICEO|−|−|500|nAdc| |Emitter-Base Cutoff Current (VEB= 6.0, IC= 5.0 mA)|IEBO|−|−|0.2|mAdc| |**ON CHARACTERISTICS**|||||| |Collector-Base Breakdown Voltage (IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc| |Collector-Emitter Breakdown Voltage (IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc| |DC Current Gain (VCE= 10 V, IC= 5.0 mA)|hFE|80|140|−|| |Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.3 mA)|VCE(SAT)|−|−|0.25|Vdc| |Output Voltage (on) (VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc| |Output Voltage (off) (VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc| |Input Resistor|R1|7.0|10|13|k�| |Resistor Ratio|R1/R2|0.17|0.21|0.25|| |**Q2 TRANSISTOR: NPN**
**OFF CHARACTERISTICS**|||||| |Collector-Base Cutoff Current (VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc| |Collector-Emitter Cutoff Current (VCB= 50 V, IB= 0)|ICEO|−|−|500|nAdc| |Emitter-Base Cutoff Current (VEB= 6.0, IC= 0 mA)|IEBO|−|−|0.1|mAdc| |**ON CHARACTERISTICS**|||||| |Collector-Base Breakdown Voltage (IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc| |Collector-Emitter Breakdown Voltage (IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc| |DC Current Gain (VCE= 10 V, IC= 5.0 mA)|hFE|80|140|−|| |Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.3 mA)|VCE(SAT)|−|−|0.25|Vdc| |Output Voltage (on) (VCC= 5.0 V, VB= 3.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc| |Output Voltage (off) (VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc| |Input Resistor|R1|32.9|47|61.1|k�| |Resistor Ratio|R1/R2|0.8|1.0|1.2|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **==> picture [239 x 174] intentionally omitted <==** **----- Start of picture text -----**
250
200
150
100
R�JA = 833°C/W
50
0-�50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
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**Figure 1. Derating Curve** **www.onsemi.com** **2** **EMD4DXV6** ## **TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6 PNP TRANSISTOR** **==> picture [492 x 404] intentionally omitted <==** **----- Start of picture text -----**
1 180
I C /I B = 10 TA�=�-25 ° C 160 VCE = 10 V 25°C TA�=�75°C
140
0.1 75°C 25°C 120 -25°C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain
4.5 100
4 f = 1 MHz TA�=�75°C 25°C
lE = 0 V
3.5 TA = 25°C
3 -25°C
2.5
10
2
1.5
1
VO = 5 V
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50 1 0 2 4 6 8 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
**----- End of picture text -----**
**Figure 4. Output Capacitance** **Figure 5. Output Current versus Input Voltage** **==> picture [236 x 171] intentionally omitted <==** **----- Start of picture text -----**
10
VO = 0.2 V 25°C
TA�=�-25°C
75°C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 6. Input Voltage versus Output Current** **www.onsemi.com** **3** **EMD4DXV6** ## **TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6 NPN TRANSISTOR** **==> picture [491 x 585] intentionally omitted <==** **----- Start of picture text -----**
10 1000
IC/IB = 10 TA = −25 ° C VCE = 10 V
25 ° C 75 ° C T A = 75 ° C
1 25 ° C
−25 ° C
100
0.1
0.01
0 20 40 60 80 101 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain
1 100
f = 1 MHz ° 25 ° C
75 C
0.8 TlEA = 0 A = 25 ° C 10 TA = −25 ° C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
100
VO = 0.2 V
TA = −25 ° C
25 ° C
10 75°C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
(VOLTS)
MAXIMUM COLLECTOR VOLTAGE
DC CURRENT GAIN (NORMALIZED)
CE(sat), FE,
V h
CAPACITANCE (pF)
ob,
C
COLLECTOR CURRENT (mA)
IC,
INPUT VOLTAGE (VOLTS)
in,
V
**----- End of picture text -----**
**Figure 11. Input Voltage vs. Output Current** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [32 x 23] intentionally omitted <==** **----- Start of picture text -----**
6
1
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## **SOT−563, 6 LEAD** CASE 463A ISSUE H ## DATE 26 JAN 2021 **==> picture [42 x 7] intentionally omitted <==** **----- Start of picture text -----**
SCALE 4:1
**----- End of picture text -----**
## **DOCUMENT NUMBER:** ## **98AON11126D** ## **DESCRIPTION: SOT−563, 6 LEAD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 ## **SOT−563, 6 LEAD** CASE 463A ISSUE H ## DATE 26 JAN 2021 ## **GENERIC MARKING DIAGRAM*** XX M 1 XX = Specific Device Code M = Month Code . = Pb−Free Package - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER:** **98AON11126D** **DESCRIPTION: SOT−563, 6 LEAD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 2 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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