# Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 100 mA, 4.7 kohm, 10 kohm

![Product image](https://novapart.co/image/farnell:2727961/)

**URL**: https://novapart.co/products/EMC5DXV5T1G/bipolar-pre-biased-digital-transistor-npn-and-pnp
**SKU**: EMC5DXV5T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors
**Price**: €0.0380
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 5 Pin |
| Power Dissipation | 500mW |
| Rf Transistor Case | SOT-553 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN and PNP Complement |
| Transistor Case Style | SOT-553 |
| Base Input Resistor R1 | 4.7kohm |
| Dc Current Gain Hfe Min | 80hFE |
| Resistor Ratio, R1 / R2 | 0.47(Ratio) |
| Base Emitter Resistor R2 | 10kohm |
| Operating Temperature Max | 150°C |
| Digital Transistor Polarity | NPN and PNP Complement |
| Continuous Collector Current | 100mA |
| Continuous Collector Current Ic | 100mA |
| Collector Emitter Voltage Max Npn | 50V |
| Collector Emitter Voltage Max Pnp | 50V |
| Collector Emitter Voltage V(Br)Ceo | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2727961/)

## EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G 

## Dual Common Base-Collector Bias Resistor Transistors 

## **NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network** 

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1G series, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium. 

## **http://onsemi.com** 

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3 2 1<br>R1<br>R2<br>Q2<br>R2<br>Q1<br>R1<br>4 5<br>5<br>S<br>1<br>SOT−553<br>CASE 463B<br>**----- End of picture text -----**<br>


## **Features** 

- Simplifies Circuit Design 

## **MARKING DIAGRAM** 

- Reduces Board Space 

- Reduces Component Count 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free Devices 

**MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-Base Voltage|VCBO|50|Vdc|
|Collector-Emitter Voltage|VCEO|50|Vdc|
|Collector Current|IC|100|mAdc|



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**----- Start of picture text -----**<br>
Ux M<br>**----- End of picture text -----**<br>


Ux = Specific Device Code x = C, 3, E, or 5 

M = Date Code = Pb−Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **EMC2DXV5T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **May, 2014 − Rev. 7** 

**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|**ONE JUNCTION HEATED**||||
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C|PD|357 (Note 1)<br>2.9 (Note 1)|mW<br>mW/°C|
|Thermal Resistance,Junction-to-Ambient|R�JA|350(Note 1)|°C/W|
|**BOTH JUNCTIONS HEATED**||||
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C|PD|500 (Note 1)<br>4.0 (Note 1)|mW<br>mW/°C|
|Thermal Resistance, Junction-to-Ambient|R�JA|250 (Note 1)|°C/W|
|Junction and Storage Temperature|TJ,Tstg|−55 to +150|°C|



1. FR−4 @ Minimum Pad 

## **DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES** 

|**Device**|**Marking**|**Transistor 1 − PNP**|**Transistor 1 − PNP**|**Transistor 2 − NPN**|**Transistor 2 − NPN**|**Package**|**Shipping**†|
|---|---|---|---|---|---|---|---|
|||**R1 (K)**|**R2 (K)**|**R1 (K)**|**R2 (K)**|||
|EMC2DXV5T1G|UC|22|22|22|22|SOT−553<br>(Pb−Free)|4000 / Tape & Reel|
|NSVEMC2DXV5T1G*|UC|22|22|22|22||4000 / Tape & Reel|
|EMC3DXV5T1G|U3|10|10|10|10||4000 / Tape & Reel|
|EMC3DXV5T5G|||||||8000 / Tape & Reel|
|EMC4DXV5T1G|UE|10|47|47|47||4000 / Tape & Reel|
|EMC5DXV5T1G|U5|4.7|10|47|47||4000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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250<br>200<br>150<br>100<br>R�JA = 833°C/W<br>50<br>0-�50 0 50 100 150<br>TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 1. Derating Curve<br>PD, POWER DISSIPATION (MILLIWATTS)<br>**----- End of picture text -----**<br>


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**2** 

**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise|noted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**Q1 TRANSISTOR: PNP**<br>**OFF CHARACTERISTICS**||||||
|Collector-Base Cutoff Current (VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc|
|Collector-Emitter Cutoff Current (VCB= 50 V, IB= 0)|ICEO|−|−|500|nAdc|
|Emitter-Base Cutoff Current<br>EMC2DXV5T1G<br>(VEB= 6.0 V, IC= 0)<br>EMC3DXV5T1G<br>EMC4DXV5T1G<br>EMC5DXV5T1G|IEBO|−<br>−<br>−<br>−|−<br>−<br>−<br>−|0.2<br>0.5<br>0.2<br>1.0|mAdc|
|**ON CHARACTERISTICS**||||||
|Collector-Base Breakdown Voltage (IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc|
|Collector-Emitter Breakdown Voltage (IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc|
|DC Current Gain<br>EMC2DXV5T1G<br>(VCE= 10 V, IC= 5.0 mA)<br>EMC3DXV5T1G<br>EMC4DXV5T1G<br>EMC5DXV5T1G|hFE|60<br>35<br>80<br>20|100<br>60<br>140<br>35|−<br>−<br>−<br>−||
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.3 mA)|VCE(SAT)|−|−|0.25|Vdc|
|Output Voltage (on) (VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc|
|Output Voltage (off) (VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc|
|Input Resistor<br>EMC2DXV5T1G<br>EMC3DXV5T1G, EMC4DXV5T1G<br>EMC5DXV5T1G|R1|15.4<br>7.0<br>3.3|22<br>10<br>4.7|28.6<br>13<br>6.1|k�|
|Resistor Ratio<br>EMC2DXV5T1G<br>EMC3DXV5T1G<br>EMC4DXV5T1G<br>EMC5DXV5T1G|R1/R2|0.8<br>0.8<br>0.17<br>0.38|1.0<br>1.0<br>0.21<br>0.47|1.2<br>1.2<br>0.25<br>0.56||
|**Q2 TRANSISTOR: NPN**<br>**OFF CHARACTERISTICS**||||||
|Collector-Base Cutoff Current (VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc|
|Collector-Emitter Cutoff Current (VCB= 50 V, IB= 0)|ICEO|−|−|500|nAdc|
|Emitter-Base Cutoff Current<br>EMC2DXV5T1G<br>(VEB= 6.0 V, IC= 0)<br>EMC3DXV5T1G<br>EMC4DXV5T1G, EMC5DXV5T1G|IEBO|−<br>−<br>−|−<br>−<br>−|0.2<br>0.5<br>0.1|mAdc|
|**ON CHARACTERISTICS**||||||
|Collector-Base Breakdown Voltage (IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc|
|Collector-Emitter Breakdown Voltage (IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc|
|DC Current Gain<br>EMC2DXV5T1G<br>(VCE= 10 V, IC= 5.0 mA)<br>EMC3DXV5T1G<br>EMC4DXV5T1G, EMC5DXV5T1G|hFE|60<br>35<br>80|100<br>60<br>140|−<br>−<br>−||
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.3 mA)|VCE(SAT)|−|−|0.25|Vdc|
|Output Voltage (on) (VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc|
|Output Voltage (off) (VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc|
|Input Resistor<br>EMC2DXV5T1G<br>EMC3DXV5T1G<br>EMC4DXV5T1G, EMC5DXV5T1G|R1|15.4<br>7.0<br>33|22<br>10<br>47|28.6<br>13<br>61|k�|
|Resistor Ratio<br>EMC2DXV5T1G<br>EMC3DXV5T1G<br>EMC4DXV5T1G, EMC5DXV5T1G|R1/R2|0.8<br>0.8<br>0.8|1.0<br>1.0<br>1.0|1.2<br>1.2<br>1.2||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR** 

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10 1000<br>IC/IB = 10 VCE = 10 V<br>T A �=�75°C<br>1 25 ° C 25°C<br>TA = -25°C 100 -25°C<br>75°C<br>�0.1<br>0.01 10<br>0 �20 �40 �50 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain<br>4 100<br>75°C 25°C<br>3 f = 1 MHz l T EA = 0 mA  = 25°C 10 T A �=�-25°C<br>1<br>2<br>�0.1<br>1<br>�0.01<br>VO = 5 V<br>0 �0.001<br>0 10 20 30 40 50 0 1 �2 �3 �4 �5 �6 �7 �8 �9 10<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>hFE, DC CURRENT GAIN<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Output Capacitance** 

**Figure 5. Output Current versus Input Voltage** 

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100<br>VO = 0.2 V<br>T A �=�-25°C<br>10 25°C<br>75°C<br>1<br>�0.1<br>0 10 �20 �30 �40 �50<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 6. Input Voltage versus Output Current** 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR** 

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1 1000<br>IC/IB = 10 TA�=�-25°C V CE  = 10 V<br>25 ° C TA�=�75 ° C<br>25°C<br>0.1<br>-25°C<br>75°C<br>100<br>0.01<br>0.001 0 20 40 50 10 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain<br>4 100 25°C<br>f = 1 MHz 75°C<br>3 I T E A  = 0 mA  = 25°C 10 TA�=�-25°C<br>1<br>2<br>0.1<br>1<br>0.01<br>VO = 5 V<br>0<br>0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>hFE, DC CURRENT GAIN<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 9. Output Capacitance** 

**Figure 10. Output Current versus Input Voltage** 

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10<br>VO = 0.2 V TA�=�-25°C<br>25°C<br>75°C<br>1<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 11. Input Voltage versus Output Current** 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR** 

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1<br>I C /I B  = 10<br>TA�=�-25°C<br>�0.1<br>25°C<br>75°C<br>�0.01<br>0 �20 �40 50<br>IC, COLLECTOR CURRENT (mA)<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 12. VCE(sat) versus IC** 

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1000<br>VCE = 10 V<br>T A �=�75°C<br>25°C<br>100 -25°C<br>10<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 13. DC Current Gain** 

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4 100 75°C 25°C<br>f = 1 MHz<br>3 l T EA = 0 mA  = 25°C 10 TA = -25 ° C<br>1<br>2<br>�0.1<br>1<br>�0.01 VO = 5 V<br>0 �0.001<br>0 10 20 30 40 50 0 1 �2 3 �4 �5 �6 �7 �8 �9 10<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>Figure 14. Output Capacitance Figure 15. Output Current versus Input<br>Voltage<br>100<br>VO = 0.2 V<br>TA�=�-25°C<br>10<br>25°C<br>75°C<br>1<br>�0.1<br>0 10 �20 �30 �40 �50<br>IC, COLLECTOR CURRENT (mA)<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 16. Input Voltage versus Output Current** 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR** 

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1<br>I C /II B  = 10<br>25 ° C<br>0.1 T A �=�-25°C-25°C25°C°CC<br>75°C5°C°CC<br>0.01<br>0.001<br>0 20 40 50<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


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1 1000<br>VCE = 10 V<br>I C /II B  = 10<br>TA�=�75°C<br>25 ° C 25° C<br>0.1 T A �=�-25°C-25°C25°C°CC 75°C5°C°CC -25°C<br>100<br>0.01<br>0.001 0 20 40 50 101 10 100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain<br>4 100 75°C 25°C<br>f = 1 MHz IE = 0 mA 10 T A �=�-25°C<br>3 T A  = 25°C<br>1<br>2<br>0.1<br>1<br>0.01<br>VO = 5 V<br>0 0.001<br>0 10 20 30 40 50 0 2 4 6 8 10<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>hFE, DC CURRENT GAIN<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 19. Output Capacitance** 

**Figure 20. Output Current versus Input Voltage** 

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100<br>VO = 0.2 V<br>T A �=�-25°C<br>10<br>75°C 25°C<br>1<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 21. Input Voltage versus Output Current** 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR** 

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**----- Start of picture text -----**<br>
1 180<br>I C /I B = 10 TA�=�-25 ° C 160 VCE = 10 V 25°C TA�=�75°C<br>140<br>0.1 75°C 25°C 120 -25°C<br>100<br>80<br>0.01 60<br>40<br>20<br>0.001 0<br>0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain<br>4.5 100<br>4 f = 1 MHz TA�=�75°C 25°C<br>lE = 0 V<br>3.5 TA = 25°C<br>3 -25°C<br>2.5<br>10<br>2<br>1.5<br>1<br>VO = 5 V<br>0.5<br>0<br>0 2 4 6 8 10 15 20 25 30 35 40 45 50 1 0 2 4 6 8 10<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage<br>10 +12 V<br>VO = 0.2 V 25°C<br>TA�=�-25°C<br>75°C Typical Application<br>for PNP BRTs<br>1<br>LOAD<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 26. Input Voltage versus Output Current** 

**Figure 27. Inexpensive, Unregulated Current Source** 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR** 

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**----- Start of picture text -----**<br>
1 1000<br>IC/IB = 10 VCE = 10 V<br>TA�=�75°C<br>25°C<br>100 -25°C<br>TA�=�75°C<br>25°C<br>0.1 -25°C<br>10<br>0.01 1<br>0 10 20 30 40 50 60 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 28. VCE(sat) versus IC Figure 29. DC Current Gain<br>12 100<br>f = 1 MHz<br>10 I TEA  = 0 mA  = 25°C 10 75°C<br>8<br>6 1<br>4 VO = 5 V<br>SERIES 1 0.1<br>2 TA�=�-25°C<br>25°C<br>0 0.01<br>0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>hFE, DC CURRENT GAIN<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 30. Output Capacitance** 

**Figure 31. Output Current versus Input Voltage** 

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**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR** 

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**----- Start of picture text -----**<br>
10 1000<br>IC/IB = 10 VCE = 10 V<br>TA�=�75°C<br>1 25 ° C<br>-25°C<br>°<br>TA�=�-25°C 25 C 100<br>75°C<br>0.1<br>0.01 0 20 40 50 10 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain<br>1 f = 1 MHz 100 75°C 25°C<br>IE = 0 mA<br>0.8 T A  = 25°C 10 TA = -25°C<br>0.6 1<br>0.4 0.1<br>0.2 0.01<br>V O = 5 V<br>0 0.001<br>0 10 20 30 40 50 0 2 4 6 8 10<br>VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>hFE, DC CURRENT GAIN<br>, COLLECTOR EMITTER SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 34. Output Capacitance** 

**Figure 35. Output Current versus Input Voltage** 

**==> picture [232 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VO = 0.2 V<br>°<br>TA�=�-25 C 25 ° C<br>10 75°C<br>1<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 36. Input Voltage versus Output Current** 

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**10** 

**EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G** 

## **PACKAGE DIMENSIONS** 

**SOT−553, 5 LEAD** CASE 463B ISSUE C 

**==> picture [437 x 329] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>−X− L 2.3. CONTROLLING DIMENSION: MILLIMETERSMAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH<br>~ r f<br>THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>5 4<br>E MILLIMETERS INCHES<br>−Y− HE DIM MIN NOM MAX MIN NOM MAX<br>1 2 3 A 0.50 0.55 0.60 0.020 0.022 0.024<br>b 0.17 0.22 0.27 0.007 0.009 0.011<br>c 0.08 0.13 0.18 0.003 0.005 0.007<br>b 5 PL c D 1.55 1.60 1.65 0.061 0.063 0.065<br>E 1.15 1.20 1.25 0.045 0.047 0.049<br>e 0.08 (0.003) M X Y e 0.50 BSC 0.020 BSC<br>L 0.10 0.20 0.30 0.004 0.008 0.012<br>TFe mn ¥ ESSE H E 1.55 1.60 1.65 0.061 0.063 0.065<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>0.3<br>0.0118<br>PY<br>0.45<br>0.0177<br>1.0<br>1.35 roe 0.0394 ,<br>0.0531<br>Lead<br>0.5 0.5<br>0.0197 0.0197<br>SCALE 20:1 mm<br>inches<br>aS (—)<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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