EESX1055

## **Photomicrosensor (Transmissive) EE-SX1055** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|0.2 max.|0.2 max.|
|mcrmy|
|Four, 5°|0.5±0.05|
|White band|
|)|_ H|A|
|Optical|
|5.4±0.2|axis|
|3.6±0.5|
|i!|fl|Four, 0.5|1|Four, 0.25|a|||Cross section AA||||
|Internal Circuit|
|K|C|
|Unless otherwise specified, the|
|tolerances are as shown below.|
|A|E|Dimensions           Tolerance|
|3 mm max.|±0.3|
|Terminal No.       Name|
|3 < mm ≤ 6|±0.375|
|A|Anode|
|6 < mm ≤ 10|±0.45|
|K|Cathode|
|10 < mm ≤ 18|±0.55|
|C|Collector|
|E|Emitter|18 < mm ≤ 30|±0.65|

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## ■ **Features** 

- Longer leads allow the sensor to be mounted to a 1.6-mm thick board. 

- 5.4-mm-tall compact model. 

- PCB mounting type. 

- High resolution with a 0.5-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

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|---|---|---|---|
|Item|Symbol|Rated value|
|Emitter|Forward current|IF|50 mA|
|(see note 1)|
|Pulse forward cur-|IFP|1 A|
|rent|(see note 2)|
|Reverse voltage|VR|4 V|
|Detector|Collector–Emitter|VCEO|30 V|
|voltage|
|Emitter–Collector|VECO|---|
|voltage|
|Collector current|IC|20 mA|
|Collector dissipa-|PC|100 mW|
|tion|(see note 1)|
|Ambient tem-|Operating|Topr|–25°C to 85°C|
|perature|Storage|Tstg|–30°C to 100°C|
|Soldering temperature|Tsol|260°C|
|(see note 3)|

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- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

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||||||
|---|---|---|---|---|
|Item|Symbol|Value|Condition|
|Emitter|Forward voltage|VF|1.2 V typ., 1.5 V max.|IF = 30 mA|
|SS|yt|
|Reverse current|IR|0.01 μA typ., 10 μA max.|VR = 4 V|
|Peak emission wavelength|λP|940 nm typ.|IF = 20 mA|
|SSes|es|ee|
|Detector|Light current|IL|0.5 mA min., 14 mA max.|IF = 20 mA, VCE = 10 V|
|ee|
|Dark current|ID|2 nA typ., 200 nA max.|VCE = 10 V, 0 lx|
|ee|ee|
|Leakage current|ILEAK|---|---|
|a|eeee|
|Collector–Emitter saturated volt-|VCE (sat)|0.1 V typ., 0.4 V max.|IF = 20 mA, IL = 0.1 mA|
|age|
|Peak spectral sensitivity wave-|λP|850 nm typ.|VCE = 10 V|
|SSS|length|
|Rising time|tr|4 μs typ.|VCC = 5 V, RL = 100 Ω, IL = 5 mA|
|po|
|Falling time|tf|4 μs typ.|VCC = 5 V, RL = 100 Ω, IL = 5 mA|
|a|I|

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**EE-SX1055** Photomicrosensor (Transmissive) 

42 

## ■ **Engineering Data** 

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Forward Current vs. Collector  Forward Current vs. Forward  Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>Ta = 25°C<br>IF VCE = 10 V<br>Ta = −30°C<br>TEEN PC TE H H Ta = 25°C CH EE<br>; * Ta = 70°C | Clee<br>7SEEXNeeA »ia HI]HEL | Pt [ttt]<br>4 }<br>NAL PPUE) -RREPAEEwt<br>2 Wee 20 PEt Tw | tt<br>°LN | ee<br>0Pit tt. F >EAYZ| TEEWeEknnaeene4a<br>40-20 0 20 400 («60 80 100 0 02 04 06 08 1 #12 14 16 18 0 10 20 30 40<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>Ta = 25°C°CC IFF = 20 mA  VCE = 10 VCE = 10 V = 10 V =<br>VCE = 5 VCE = 5 V = 5 V 0 lxlxx<br>IFF = 50 mA<br>COE SaGnec=->cee<br>7 —_—— <4 IFF = 40 mA 100 100 see see eeeepeeepee<br>Lea as Sasa aa<br>sHPereTPereTeT IFF = 30 mA 0 a _awN 0p SS ee— —— — —<br>IFF = 20 mA<br>| ——asas ses e0 ===——— 2<br>|yo}———yo}—————— IFF = 10 mA = 70SeeSee s >=| ee==| ee= ee== -- =_-- =_--_--<br>——————erer 9==<br>T CE aes SSSSSees SSSSSees<br>of] 3 4 5 6 7 8 g 10 60-40-40 -20 0 20 40 60 80 100 ooo“"".30L-26“"".30L-26L-26-26 -10 0 10 t 20t30t3030 40 50t60t6060 70 80<br>Collector−Emitter voltage VCE (V)−Emitter voltage VCE (V)Emitter voltage VCE (V)CE (V) (V) Ambient temperature Ta (°C)°C)C) °C)<br> (mA)F  (mW)C  (mA)F<br> (mA)<br>L<br>Forward current  I Collector dissipation P Forward current  I Light current  I<br> (%)<br> (mA) L<br>L  (nA)<br>Light current  I D<br>Relative light current  I Dark current   I<br>**----- End of picture text -----**<br>


**Light Current vs. Forward Current Characteristics (Typical)** 

**Light Current vs. Collector** − **Emitter Voltage Characteristics (Typical)** 

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Ta = 25°C°CC IFF = 20 mA  VCE = 10 VCE = 10 V = 10 V =<br>VCE = 5 VCE = 5 V = 5 V 0 lxlxx<br>IFF = 50 mA<br>COE SaGnec=->cee<br>7 —_—— <4 IFF = 40 mA 100 100 see see eeeepeeepee<br>Lea as Sasa aa<br>sHPereTPereTeT IFF = 30 mA 0 a _awN 0p SS ee— —— — —<br>IFF = 20 mA<br>| ——asas ses e0 ———===——— 2<br>|yo}———yo}—————— IFF = 10 mA = 70SeeSee s >=| ee==| ee= ee== -- =_-- =_--_--<br>——————erer 9==<br>T CE aes SSSSSees SSSSSees<br>of] 3 4 5 6 7 8 g 10 60-40-40 -20 0 20 40 60 80 100 ooo“"".30L-26“"".30L-26L-26-26 -10 0 10 t 20t30t3030 40 50t60t6060 70 80 90<br>Collector−Emitter voltage VCE (V)−Emitter voltage VCE (V)Emitter voltage VCE (V)CE (V) (V) Ambient temperature Ta (°C)°C)C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>1000 eeSSE eeSSESSE 120 120<br>fe—Se<<<0.Ss)—Se<<<0.Ss)Se<<<0.Ss)<<<0.Ss)0.Ss) oo oases|||| Ta = 25VCC = 5 V °VCC = 5 V °CC = 5 V ° = 5 V °°C al C cH ‘00Pit ly VTa = 25IFCE= 20 mA  = 10 V ° i] C   100 F] 1 |i [| Ta = 25IVFCE= 20 mA  = 10 V °C<br>(Center of<br>optical axis)<br>ee Hod 80 \ |<br>a a 80<br>oea PE Ti Ph 60 | | | lM d | 7<br>woof Tf | IN NL Lae «0 ta<br>ACeeee ee<br>Ceeee © Vill 40 N il<br>os | || 20 | | | | iN<br>aen oe 20<br>0.01CLEen MEonon 1 10 ;Pi}O5 025 0 025ETE05 O75 10 0−2.0 FP] −1.5 −1.0 Tf −0.5 i 0 0.5 \ yt 1.0 1.5 2.0<br>Load resistance RL (kΩ)L (kΩ) (kΩ)Ω)) Distance d (mm) Distance d (mm)<br> (%)<br> (mA) L<br>L  (nA)<br>Light current  I D<br>Relative light current  I Dark current   I<br> (%)L  (%)L (Center of optical axis)<br>Relative light current  I Relative light current  I<br>**----- End of picture text -----**<br>


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Response Time vs. Load Resist-<br>ance Characteristics (Typical)<br>1000 eeSSE eeSSESSE<br>.Ss) oo Ta = 25VCC = 5 V °VCC = 5 V °CC = 5 V ° = 5 V °°C cH<br>fe—Se<<<0.Ss)—Se<<<0.Ss)Se<<<0.Ss)<<<0.Ss)0.Ss) oases|||| al<br>ee<br>oea a<br>woof Tf | IN NL Lae<br>ACeeee<br>os | ||<br>CLEenaen oe<br>0.01CLEen MEonon 1 10<br>Load resistance RL (kΩ)L (kΩ) (kΩ)Ω))<br>Response Time Measurement<br>Circuit<br>Input — Le—t<br>90 %<br>Output 10 %<br>° f } —-t<br>tr tf<br>Input K vec<br>Eza4<br>Output<br>s)<br>μ<br>Response time tr, tf (<br>**----- End of picture text -----**<br>


**EE-SX1055** Photomicrosensor (Transmissive) 

43