# Transmissive Photo Interrupter, Phototransistor, Through Hole, 3 mm, 0.5 mm, 50 mA, 4 V

![Product image](https://novapart.co/image/farnell:3460669/)

**URL**: https://novapart.co/products/EE-SX198/transmissive-photo-interrupter-phototransistor
**SKU**: EE-SX198
**Manufacturer**: OMRON
**Category**: Sensors & Transducers || Sensors || Photo Interrupters || Transmissive Photo Interrupters
**Price**: €1.3300
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Gap Width | 3mm |
| Sensor Output | Phototransistor |
| Aperture Width | 0.5mm |
| Forward Voltage | 1.2V |
| Sensor Mounting | Through Hole |
| Forward Current If | 50mA |
| Reverse Voltage Vr | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3460669/)

## **Photomicrosensor (Transmissive) EE-SX198** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- General-purpose model with a 3-mm-wide slot. 

- PCB mounting type. 

**==> picture [252 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
12.2±0.3<br>5±0.1<br>0.5±0.1 Four, C0.3 Two, C1±0.3<br>Optical<br>axis<br>8.5±0.1 10±0.2<br>6.5+0.1<br>6.2±0.5<br>Four, 0.25±0.1 Four, 0.5±0.1<br>Cross section BB 2.5±0.1<br>9.2±0.3 Cross section AA<br>Internal Circuit<br>K C<br>A E<br>Terminal No.      Name<br>A     Anode<br>K     Cathode<br>C     Collector Unless otherwise specified,<br>the tolerances are ±0.2 mm.<br>E     Emitter<br>**----- End of picture text -----**<br>


- High resolution with a 0.5-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|---|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 85°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

|**Item**<br>~~OO~~<br>~~eS~~|**Item**<br>~~OO~~<br>~~eS~~|**Symbol**<br>~~OO~~<br>~~ns~~|**Value**<br>~~OO~~<br>~~Gn~~<br>~~eee~~|**Condition**<br>~~OO~~<br>~~eee~~|
|---|---|---|---|---|
|**Emitter**<br>~~eS~~|**Forward voltage**<br>~~es~~<br>~~eS~~|VF<br>~~es~~<br>~~ns~~|1.2 V typ., 1.4 V max.<br>~~es~~<br>~~Gn~~<br>~~eee~~|IF= 30 mA<br>~~es~~<br>~~eee~~|
||**Reverse current**<br>~~eS~~|IR<br>~~ns~~<br>~~(~~|0.01μA typ., 10μA max.<br>~~Gn~~<br>~~eee~~<br>~~nD~~|VR= 4 V<br>~~eee~~|
||**Peak emission wavelength**<br>~~eS~~<br>~~es~~|λP<br>~~ns~~<br>~~es~~<br>~~(~~|940 nm typ.<br>~~Gn~~<br>~~eee~~<br>~~es~~<br>~~nD~~|IF= 20 mA<br>~~eee~~<br>~~es~~|
|**Detector**<br>~~eS~~<br>~~SSS~~|**Light current**<br>~~eS~~<br>~~SSS~~|IL<br>~~ns~~<br>~~(~~<br>~~SSS~~<br>~~(rs~~|0.5 mA min., 14 mA max.<br>~~Gn~~<br>~~eee~~<br>~~nD~~<br>~~SSS~~|IF= 20 mA, VCE= 5 V<br>~~eee~~<br>~~SSS~~|
||**Dark current**<br>~~SSS~~<br>~~ey~~|ID<br>~~SSS~~<br>~~ey~~<br>~~(rs~~|2 nA typ., 200 nA max.<br>~~SSS~~<br>~~ey~~|VCE= 20 V, 0lx<br>~~SSS~~<br>~~ey~~|
||**Leakage current**<br>~~SSS~~<br>~~|~~|ILEAK<br>~~SSS~~<br>~~(rs~~<br>~~|~~|---<br>~~SSS~~<br>~~|~~|---<br>~~SSS~~<br>~~|~~|
||**Collector–Emitter saturated volt-**<br>**age**<br>~~SSS~~<br>~~ee~~|VCE(sat)<br>~~SSS~~<br>~~ee~~|0.1 V typ., 0.4 V max.<br>~~SSS~~<br>~~a~~<br>~~ee~~|IF= 40 mA, IL= 0.5 mA<br>~~SSS~~<br>~~a~~<br>~~ee~~<br>~~ee~~|
||**Peak spectral sensitivity wave-**<br>**length**<br>~~SSS~~<br>~~ee~~|λP<br>~~SSS~~<br>~~ee~~<br>~~rrr~~|850 nm typ.<br>~~SSS~~<br>~~ee~~<br>~~rs~~|VCE= 10 V<br>~~SSS~~<br>~~ee~~<br>~~ee~~|
|**Rising time**<br>~~ee~~<br>~~es~~||tr<br>~~ee~~<br>~~es~~<br>~~rrr~~|4μs typ.<br>~~ee~~<br>~~es~~<br>~~rs~~|VCC= 5 V, RL= 100Ω, IL= 5 mA<br>~~ee~~<br>~~ee~~<br>~~es~~|
|**Falling time**<br>~~nf~~||tf<br>~~rrr ~~<br>~~nf~~|4μs typ.<br> ~~rs~~<br>~~nf~~|VCC= 5 V, RL= 100Ω, IL= 5 mA<br>~~nf~~|



**EE-SX198** Photomicrosensor (Transmissive) 

94 

## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

**==> picture [143 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
Forward Current vs. Forward<br>Voltage Characteristics (Typical)<br>**----- End of picture text -----**<br>


**Light Current vs. Forward Current Characteristics (Typical)** 

**==> picture [477 x 300] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ta = 25°C<br>IF VCE = 10 V<br>Pt tT Tt Pee E E<br>40PENT PC Ta = Ta = 25−30°C°C IL) ePPE ee ET A<br>Ta = 70°C<br>LNA 100 40 : 14 y<br>“ po ps S HEE onan Aenn<br>\ » f ott TAL<br>SREANE el AEH<br>OCEEN<br>NGE CUE IPE |) Egger errs<br>;Pit | » .;S000)VA SRG ififo4eneeeeee| | ti ti |<br>+40 -20 0 20 40 60 80 100 i?) 02 04 06 O08 1 12 14 16 18 0 10 20 30 40<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>TT 16P|P| Ta = 25°C >a| °C | C T on IIFF= 50 mA= 40 mAIFF= 50 mA= 40 mAFF= 50 mA= 40 mAF= 50 mA= 40 mA= 50 mA= 40 mA= 40 mA |_|ao "20110110 IVFCE= 20 mA  = 5 VVFCE= 20 mA  = 5 VFCE= 20 mA  = 5 VCE= 20 mA  = 5 V= 20 mA  = 5 V = 5 V 10.0001,000 peas |njrotc1,000 peas |njrotc peas |njrotc |njrotcnjrotc a 0 VCElx = 10 VVCElx = 10 VCElx = 10 Vlx = 10 Vx = 10 V Sslcalca<br>ste Ld eee eolatekto tt<br>A nenwewe IFF = 30 mA ea tr<br>10P=P== o — 90 aN ==eeSoae=eeSoae=Soae= sone<br>IFF = 20 mA<br>IFF = 10 mA<br>4 ptt SSS SSS<br>eSenneSenne ee 0TPETPE | voitBe=SSSsSsnesBe=SSSsSsnes<br> (mW)  (mA)<br>C F<br> (mA)<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)<br>L<br> (nA)<br>D<br>Light current  I<br>Dark current   I<br>Relative light current  I<br>**----- End of picture text -----**<br>


**Light Current vs. Collector** − **Emitter Voltage Characteristics (Typical)** 

**==> picture [480 x 441] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ta = 25°C  = 10 V<br>TT T ao IVFCE= 20 mA  = 5 VVFCE= 20 mA  = 5 VFCE= 20 mA  = 5 VCE= 20 mA  = 5 V= 20 mA  = 5 V = 5 V 0 VCElx = 10 VVCElx = 10 VCElx = 10 Vlx = 10 Vx = 10 V<br>Sslcalca<br>16P|P| >a| on IIFF= 50 mA= 40 mAIFF= 50 mA= 40 mAFF= 50 mA= 40 mAF= 50 mA= 40 mA= 50 mA= 40 mA= 40 mA |_|ao "20110110 10.0001,000 peas |njrotc1,000 peas |njrotc peas |njrotc |njrotcnjrotc a<br>ste Ld eee eolatekto tt<br>A nenwewe IFF = 30 mA ea tr<br>10P=P== o — 90 aN ==eeSoae=eeSoae=Soae= sone<br>IFF = 20 mA<br>IFF = 10 mA<br>4 ptt SSS SSS<br>eSenneSenne ee 0TPETPE | voitBe=SSSsSsnesBe=SSSsSsnes<br>% 1 2 3 4 5 6 F7 8B 9 16 8015 -20 o) 20 40 60 80 = 100 0001 | be 8<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>1000 aESee Ta = 25VCC = 5 V °C 00120 VITa = 25FCE= 20 mA  = 10 V °C   100120 Ta = 25IVFCE= 20 mA  = 10 V °C<br>(Center of<br>Sea OSees eee Oa ea rier eeeiis 80 optical axis) d 80 \ |<br>oe Pt Vf a 60 d -<br>nll | « Hill 40 \ lil<br>oAat|<br>me ene | 20 20<br>Si<br>0.01 O41 1 10 ; 05 025 0 025 05 O75 10 0−2.0 −1.5 −1.0 −0.5 0 0.5 N 1.0 1.5 2.0<br>OLE Sil [Ti] aii a<br>Load resistance RL (kΩ)<br>Distance d (mm) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —!F Le<br>—t<br>90 %<br>Output 10 %<br>° ft } cman t<br>tr tf<br>Input iM vec<br>=k|<br>Output<br> (%)<br>L<br> (mA)<br>L<br> (nA)<br>D<br>Light current  I<br>Dark current   I<br>Relative light current  I<br>s)μ  (%)L<br> (%)<br>L<br>Response time tr, tf ( Relative light current  I (Center of optical axis)<br>Relative light current  I<br>**----- End of picture text -----**<br>


**Sensing Position Characteristics (Typical)** 

**EE-SX198** Photomicrosensor (Transmissive) 

95 



## Links

- [View this product on Novapart](https://novapart.co/products/EE-SX198/transmissive-photo-interrupter-phototransistor)
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- [Supplier page](https://es.farnell.com/en-ES/omron/ee-sx198/photomicrosensor-transistor-th/dp/3460669)
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