EE-SX198
Transmissive Photo Interrupter, Phototransistor, Through Hole, 3 mm, 0.5 mm, 50 mA, 4 V
- Manufacturer: OMRON
- Product type: Transmissive Photo Interrupters
- Gap Width: 3mm
- Sensor Output: Phototransistor
- Aperture Width: 0.5mm
- Forward Voltage: 1.2V
- Sensor Mounting: Through Hole
- Forward Current If: 50mA
- Reverse Voltage Vr: 4V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.33 € |
| Current stock | 200+ |
| Lead time | 7 days |
## **Photomicrosensor (Transmissive) EE-SX198** **Be sure to read** _**Precautions**_ **on page 25.** ## ■ **Dimensions** **Note:** All units are in millimeters unless otherwise indicated. ## ■ **Features** - General-purpose model with a 3-mm-wide slot. - PCB mounting type. **==> picture [252 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 12.2±0.3<br>5±0.1<br>0.5±0.1 Four, C0.3 Two, C1±0.3<br>Optical<br>axis<br>8.5±0.1 10±0.2<br>6.5+0.1<br>6.2±0.5<br>Four, 0.25±0.1 Four, 0.5±0.1<br>Cross section BB 2.5±0.1<br>9.2±0.3 Cross section AA<br>Internal Circuit<br>K C<br>A E<br>Terminal No. Name<br>A Anode<br>K Cathode<br>C Collector Unless otherwise specified,<br>the tolerances are ±0.2 mm.<br>E Emitter<br>**----- End of picture text -----**<br> - High resolution with a 0.5-mm-wide aperture. ## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** |**Item**|**Item**|**Symbol**|**Rated value**| |---|---|---|---| |**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)| ||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)| ||**Reverse voltage**|VR|4 V| |**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V| ||**Emitter–Collector**<br>**voltage**|VECO|---| ||**Collector current**|IC|20 mA| ||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)| |**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 85°C| ||**Storage**|Tstg|–30°C to<br>100°C| |**Soldering temperature**||Tsol|260°C<br>(see note 3)| - **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. **3.** Complete soldering within 10 seconds. ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** |**Item**<br>~~OO~~<br>~~eS~~|**Item**<br>~~OO~~<br>~~eS~~|**Symbol**<br>~~OO~~<br>~~ns~~|**Value**<br>~~OO~~<br>~~Gn~~<br>~~eee~~|**Condition**<br>~~OO~~<br>~~eee~~| |---|---|---|---|---| |**Emitter**<br>~~eS~~|**Forward voltage**<br>~~es~~<br>~~eS~~|VF<br>~~es~~<br>~~ns~~|1.2 V typ., 1.4 V max.<br>~~es~~<br>~~Gn~~<br>~~eee~~|IF= 30 mA<br>~~es~~<br>~~eee~~| ||**Reverse current**<br>~~eS~~|IR<br>~~ns~~<br>~~(~~|0.01μA typ., 10μA max.<br>~~Gn~~<br>~~eee~~<br>~~nD~~|VR= 4 V<br>~~eee~~| ||**Peak emission wavelength**<br>~~eS~~<br>~~es~~|λP<br>~~ns~~<br>~~es~~<br>~~(~~|940 nm typ.<br>~~Gn~~<br>~~eee~~<br>~~es~~<br>~~nD~~|IF= 20 mA<br>~~eee~~<br>~~es~~| |**Detector**<br>~~eS~~<br>~~SSS~~|**Light current**<br>~~eS~~<br>~~SSS~~|IL<br>~~ns~~<br>~~(~~<br>~~SSS~~<br>~~(rs~~|0.5 mA min., 14 mA max.<br>~~Gn~~<br>~~eee~~<br>~~nD~~<br>~~SSS~~|IF= 20 mA, VCE= 5 V<br>~~eee~~<br>~~SSS~~| ||**Dark current**<br>~~SSS~~<br>~~ey~~|ID<br>~~SSS~~<br>~~ey~~<br>~~(rs~~|2 nA typ., 200 nA max.<br>~~SSS~~<br>~~ey~~|VCE= 20 V, 0lx<br>~~SSS~~<br>~~ey~~| ||**Leakage current**<br>~~SSS~~<br>~~|~~|ILEAK<br>~~SSS~~<br>~~(rs~~<br>~~|~~|---<br>~~SSS~~<br>~~|~~|---<br>~~SSS~~<br>~~|~~| ||**Collector–Emitter saturated volt-**<br>**age**<br>~~SSS~~<br>~~ee~~|VCE(sat)<br>~~SSS~~<br>~~ee~~|0.1 V typ., 0.4 V max.<br>~~SSS~~<br>~~a~~<br>~~ee~~|IF= 40 mA, IL= 0.5 mA<br>~~SSS~~<br>~~a~~<br>~~ee~~<br>~~ee~~| ||**Peak spectral sensitivity wave-**<br>**length**<br>~~SSS~~<br>~~ee~~|λP<br>~~SSS~~<br>~~ee~~<br>~~rrr~~|850 nm typ.<br>~~SSS~~<br>~~ee~~<br>~~rs~~|VCE= 10 V<br>~~SSS~~<br>~~ee~~<br>~~ee~~| |**Rising time**<br>~~ee~~<br>~~es~~||tr<br>~~ee~~<br>~~es~~<br>~~rrr~~|4μs typ.<br>~~ee~~<br>~~es~~<br>~~rs~~|VCC= 5 V, RL= 100Ω, IL= 5 mA<br>~~ee~~<br>~~ee~~<br>~~es~~| |**Falling time**<br>~~nf~~||tf<br>~~rrr ~~<br>~~nf~~|4μs typ.<br> ~~rs~~<br>~~nf~~|VCC= 5 V, RL= 100Ω, IL= 5 mA<br>~~nf~~| **EE-SX198** Photomicrosensor (Transmissive) 94 ## ■ **Engineering Data** **Forward Current vs. Collector Dissipation Temperature Rating** **==> picture [143 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Forward Current vs. Forward<br>Voltage Characteristics (Typical)<br>**----- End of picture text -----**<br> **Light Current vs. Forward Current Characteristics (Typical)** **==> picture [477 x 300] intentionally omitted <==** **----- Start of picture text -----**<br> Ta = 25°C<br>IF VCE = 10 V<br>Pt tT Tt Pee E E<br>40PENT PC Ta = Ta = 25−30°C°C IL) ePPE ee ET A<br>Ta = 70°C<br>LNA 100 40 : 14 y<br>“ po ps S HEE onan Aenn<br>\ » f ott TAL<br>SREANE el AEH<br>OCEEN<br>NGE CUE IPE |) Egger errs<br>;Pit | » .;S000)VA SRG ififo4eneeeeee| | ti ti |<br>+40 -20 0 20 40 60 80 100 i?) 02 04 06 O08 1 12 14 16 18 0 10 20 30 40<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics<br>(Typical) (Typical)<br>TT 16P|P| Ta = 25°C >a| °C | C T on IIFF= 50 mA= 40 mAIFF= 50 mA= 40 mAFF= 50 mA= 40 mAF= 50 mA= 40 mA= 50 mA= 40 mA= 40 mA |_|ao "20110110 IVFCE= 20 mA = 5 VVFCE= 20 mA = 5 VFCE= 20 mA = 5 VCE= 20 mA = 5 V= 20 mA = 5 V = 5 V 10.0001,000 peas |njrotc1,000 peas |njrotc peas |njrotc |njrotcnjrotc a 0 VCElx = 10 VVCElx = 10 VCElx = 10 Vlx = 10 Vx = 10 V Sslcalca<br>ste Ld eee eolatekto tt<br>A nenwewe IFF = 30 mA ea tr<br>10P=P== o — 90 aN ==eeSoae=eeSoae=Soae= sone<br>IFF = 20 mA<br>IFF = 10 mA<br>4 ptt SSS SSS<br>eSenneSenne ee 0TPETPE | voitBe=SSSsSsnesBe=SSSsSsnes<br> (mW) (mA)<br>C F<br> (mA)<br>F (mA)<br>L<br>Forward current I Light current I<br>Forward current I<br>Collector dissipation P<br> (%)<br>L<br> (mA)<br>L<br> (nA)<br>D<br>Light current I<br>Dark current I<br>Relative light current I<br>**----- End of picture text -----**<br> **Light Current vs. Collector** − **Emitter Voltage Characteristics (Typical)** **==> picture [480 x 441] intentionally omitted <==** **----- Start of picture text -----**<br> Ta = 25°C = 10 V<br>TT T ao IVFCE= 20 mA = 5 VVFCE= 20 mA = 5 VFCE= 20 mA = 5 VCE= 20 mA = 5 V= 20 mA = 5 V = 5 V 0 VCElx = 10 VVCElx = 10 VCElx = 10 Vlx = 10 Vx = 10 V<br>Sslcalca<br>16P|P| >a| on IIFF= 50 mA= 40 mAIFF= 50 mA= 40 mAFF= 50 mA= 40 mAF= 50 mA= 40 mA= 50 mA= 40 mA= 40 mA |_|ao "20110110 10.0001,000 peas |njrotc1,000 peas |njrotc peas |njrotc |njrotcnjrotc a<br>ste Ld eee eolatekto tt<br>A nenwewe IFF = 30 mA ea tr<br>10P=P== o — 90 aN ==eeSoae=eeSoae=Soae= sone<br>IFF = 20 mA<br>IFF = 10 mA<br>4 ptt SSS SSS<br>eSenneSenne ee 0TPETPE | voitBe=SSSsSsnesBe=SSSsSsnes<br>% 1 2 3 4 5 6 F7 8B 9 16 8015 -20 o) 20 40 60 80 = 100 0001 | be 8<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>1000 aESee Ta = 25VCC = 5 V °C 00120 VITa = 25FCE= 20 mA = 10 V °C 100120 Ta = 25IVFCE= 20 mA = 10 V °C<br>(Center of<br>Sea OSees eee Oa ea rier eeeiis 80 optical axis) d 80 \ |<br>oe Pt Vf a 60 d -<br>nll | « Hill 40 \ lil<br>oAat|<br>me ene | 20 20<br>Si<br>0.01 O41 1 10 ; 05 025 0 025 05 O75 10 0−2.0 −1.5 −1.0 −0.5 0 0.5 N 1.0 1.5 2.0<br>OLE Sil [Ti] aii a<br>Load resistance RL (kΩ)<br>Distance d (mm) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —!F Le<br>—t<br>90 %<br>Output 10 %<br>° ft } cman t<br>tr tf<br>Input iM vec<br>=k|<br>Output<br> (%)<br>L<br> (mA)<br>L<br> (nA)<br>D<br>Light current I<br>Dark current I<br>Relative light current I<br>s)μ (%)L<br> (%)<br>L<br>Response time tr, tf ( Relative light current I (Center of optical axis)<br>Relative light current I<br>**----- End of picture text -----**<br> **Sensing Position Characteristics (Typical)** **EE-SX198** Photomicrosensor (Transmissive) 95
Updated at February 9, 2023
OMRON is a global leader in advanced industrial automation and electronic component manufacturing. Renowned for engineering innovative and reliable solutions, the company provides cutting-edge technologies that drive efficiency across the industrial, medical, consumer, and transportation sectors. Their extensive portfolio seamlessly integrates with evolving smart manufacturing demands to minimize production downtime and ensure exceptional quality. Our comprehensive selection of OMRON components focuses heavily on their industry-leading switching and relay technologies. The offering features a wide array of solid-state relays, contactors, and power relays designed for demanding electromechanical applications, fully supported by specialized relay accessories and precise signal relays. These foundational components deliver the robust performance and longevity required for complex automation systems and power management architectures. In addition to its renowned relay portfolio, OMRON stands at the forefront of sensing technology and process control. Our inventory features highly accurate photo interrupters, proximity switches, light sensors, and precision pressure transducers that serve as critical data inputs for modern automated environments. Complemented by reliable AC/DC converters, panel instrumentation, and process controllers, these components empower engineers to design sophisticated, highly responsive control systems.
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