EE-SX1160-W11

## **Photomicrosensor (Transmissive) EE-SX1160-W11** 

**Be sure to read** _**Precautions**_ **on page 24.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

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31.75±0.2<br>Four, R1 25.4±0.15 Optical axis<br>6±0.2 5.2±0.2<br>Four, C0.3 Two, 3.2±0.15 dia. holes<br>Emitter 18.9±0.2 Detector<br>9.5±0.2<br>Sensing window 1.1±0.1 B A Optical axis Two, C0.8 1 .1±0.1<br>13.9±0.1 15.5±0.2 13.9±0.1<br>12±0.1 12.7±0.2 12±0.1<br>3.2±0.1 610MIN.<br>E C B A K A<br>Cross section B-B Cross section A-A<br>**----- End of picture text -----**<br>


## **Internal Circuit** 

||A||||||E||Unless otherwise specified, the<br>tolerances are as shown below.||
|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||
||K||||||C||**Dimensions          Tolerance**||
||**Terminal**<br>**No.**||**Color**|||**Name**|||3 mm max.<br>±0.3<br>3<mm≤6<br>±0.375||
||A<br>K||Red<br>Black|||Anode<br>Cathode|||6<mm≤10<br>±0.45||
||C||White|||Collector|||10<mm≤18<br>±0.55||
||E||Green|||Emitter|||18<mm≤30<br>±0.65||



## ■ **Features** 

- Wide model with a 9.5-mm-wide slot. 

- Pre-wired Sensors (AWG28). 

- Solder-less lead wire connection to increase reliability. 

## ■ **Absolute Maximum Ratings (Ta = 25**  **C)** 

||**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|<br>4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|5 V|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25C to 80C|
||**Storage**|Tstg|–25C to 85C|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25  C. 

   **2.** The pulse width is 10  s maximum with a frequency of 100 Hz. 

   **3.** If you mount the Sensor with screws, use M3 screws, and flat washers and use a tightening torque of 0.5 N·m max. 

## ■ **Electrical and Optical Characteristics (Ta = 25**  **C)** 

||**Item**|**Symbol**|**Value**|**Condition**|
|---|---|---|---|---|
|**Emitter**<br> <br> <br>|**Forward voltage**<br>V|F|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**<br>I|R|0.01A typ., 10A max.|VR= 4 V|
||**Peak emission wavelength**<br>|P|920 nm typ.|IF= 20 mA|
|**Detector**<br> <br> <br> <br> <br><br> <br>|**Light current**<br>I|L|3.5 mA min., 16 mA max.|IF= 20 mA, VCE= 10 V|
||**Dark current**<br>I|D|2 nA typ., 200 nA max.|VCE= 10 V, 0lx|
||**Leakage current**<br>I|LEAK|---|---|
||**Collector–Emitter saturated volt-**<br>**age**<br>V|CE(sat)|0.15 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**Peak spectral sensitivity wave-**<br>**length**<br>|P|850 nm typ.|VCE= 10 V|
|**Rising time**|t|r|4s typ.|VCC= 5 V, RL= 100, IL= 5 mA|
|**Falling time**|t|f|4s typ.|VCC= 5 V, RL= 100, IL= 5 mA|



**EE-SX1160-W11** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

**Forward Current vs. Forward Voltage Characteristics (Typical)** 

**Light Current vs. Forward Current Characteristics (Typical)** 

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60 150 20<br>IF 18 Ta = 25 VCE = 10 V ° C<br>50 ee 16 ee<br>40 PT P  TIN C | T 100 : Ta = 25 p o re ° C  P|| 14 POO<br>Ta = 70 ° C 12<br>30 PCONATT) . 1 | |)  EEE 10 Pitt<br>\ LE ER SHER) | 8 EREEEPAEEE<br>20 SeeeANe 50 6 | A tt<br>X ETAL SW HR<br>10 LN 20febf. | 4 P iliOZEjJzT Ty<br>2<br>0-40 Poo -20 0 20 40 60 80 1000 TE;QO 2 O4 06 O8 |1 12044 16°18 00 ZeYititi 10 20 it 30 | i 40 | | 50<br>Ambient temperature Ta ( ° C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs . Collecto r— Emitter Relative Light Current vs.  Dark Current vs. Ambient<br>Voltage Characteristics (Typical) Ambient Temperature Character- Temperature Characteristics<br>istics (Typical) (Typical)<br>26<br>24 Ta = 25 ° C IVFCE= 20 mA  = 5 V 0 VCE l x = 10 V<br>22 A 4 T )tt yr ra<br>———— an<br>20 Poe , ll mre<br>IF = 50 mA<br>18<br>16 Pf IF = 40 mA isi<br>14<br>St vans tt<br>12 I F = 30 mA<br>10<br>8 ( I F = 20 mA nan j=saea/-Sa=s==<br>64 (— Q IF = 10 mA anes)eeFoie elleensOe Se a<br>2<br>0 Collecto 0 Pere 1 2 r— Emitter 3 ; 4 5 voltage 6 7 Vce 8 (V) 9 10 o-40 Ambient temperature Ta ( -20 fe) 20 wo 60 ° 80 C) ec ven“30-20-10Eo Ambient temperature Ta ( 4 10 2 30 40 50 8 ° 7o C) BO om<br>Response Time vs. Load Resis- Sensing Position Characteristics  Sensing Position Characteristics<br>tance Characteristics (Typical) (Typical) (Typical)<br>120 120<br>Ei aie Ta = 25VCC = 5 V  ° C i   100 PT | tT || VTa = 25IFCE= 20 mA  = 10 V  ° C   100 PT] ty || Ta = 25IVFCE= 20 mA  = 10 V  ° C<br>Sa maT Til S (Center of  ~<br>80 optical axis) d 80<br>d<br>2 Se 60 LEY 60 PLL APA<br>40 40<br>gereecee =  LL we] Lg<br>; Se 20 AT 20 PE ELEN<br>0 0<br>Oeste,Co it ee -2.5 OO -2.0 -1.5 -1.0 -0.5 0 0.5 | 1.0 1.5 2.0 2.5 -2.5 Kn -2.0 -1.5 -1.0 -0.5 0 0.5 N 1.0 1.5 2.0 2.5<br>O01 04 1 10<br>Distance d (mm)<br>Load resistance Ri (kQ) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —LeJ —1<br>90 %<br>Output 10 %<br>te ti<br>Input —Www— +. yee<br>Output<br> (mW)  (mA)<br>C F<br> (mA)<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)<br>L  (nA)<br>Light current  I D<br>Dark current   I<br>Relative light current  I<br> (%)<br>L<br> (%)<br>L<br>(Center of optical axis)<br>Relative light current  I<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1160-W11** Photomicrosensor (Transmissive) 

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