EE-SX1041

## **Photomicrosensor (Transmissive) EE-SX1041** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- General-purpose model with a 5-mm-wide slot. 

- PCB mounting type. 

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0.2 max. 0.2 max.<br>14±0.2<br>5 [+0.2] −0.1<br>6±0.2<br>0.2 0.5±0.1<br>Optical  2.2<br>axis<br>10 −0.20<br>7.5±0.2<br>2.5<br>5 min. Two, 0.7± 0.1<br>Four, 0.25<br>Four, 0.5 (9) 5.2±0.1<br>K C<br>(Two, 2.54)<br>A E Two, 0.7±0.1 dia.<br>2.35±0.1 6.6±0.1<br>Internal Circuit<br>K C<br>Unless otherwise specified, the<br>tolerances are as shown below.<br>A E Dimensions          Tolerance<br>3 mm max. ±0.3<br>Terminal No.      Name<br>3 < mm ≤ 6 ±0.375<br>A     Anode<br>6 < mm ≤ 10 ±0.45<br>K     Cathode<br>10 < mm ≤ 18 ±0.55<br>C     Collector<br>E     Emitter 18 < mm ≤ 30 ±0.65<br>**----- End of picture text -----**<br>


- High resolution with a 0.5-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

||**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|---|
||**Collector current**<br>**Collector dissipa-**<br>|IC<br>PC|20 mA<br>100 mW<br>|
|**Ambient tem-**<br>**perature**|**tion**<br>**Operating**|Topr|(see note 1)<br>–25°C to 95°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

||**Item**|**Symbol**|**Value**|**Condition**|
|---|---|---|---|---|
|**Emitter**|**Forward voltage**|VF|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**|IR|0.01μA typ., 10μA max.|VR= 4 V|
||**Peak emission wavelength**|λP|940 nm typ.|IF= 20 mA|
|**Detector**|**Light current**|IL|0.5 mA min., 14 mA max.|IF= 20 mA, VCE= 10 V|
||**Dark current**|ID|2 nA typ., 200 nA max.|VCE= 10 V, 0lx|
||**Leakage current**|ILEAK|---|---|
||**Collector–Emitter saturated volt-**<br>**age**|VCE(sat)|0.1 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**Peak spectral sensitivity wave-**<br>**length**|λP|850 nm typ.|VCE= 10 V|
|**Rising time**||tr|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|
|**Falling time**||tf|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|



**EE-SX1041** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

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**----- Start of picture text -----**<br>
Forward Current vs. Collector  Forward Current vs. Forward  Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>Ta = 25°C<br>IF VCE = 10 V<br>cCoooy to. |SEEEEEEOaE<br>Ta = −30°C<br>TNT PC na a Ta = 25°C e n Eee ee<br>Ta = 70°C<br>‘SaaeNel\ “ NW HHT COC]<br>; aN ; | | FECe SA7<br>|<br>LNA Giteee ine SSRES7 4EE8<br>. °PPI|) eee<br>O10PF-20 TL0 20 40 LN60 80 108 %5Saand)/02 04 06 O8 SS ann1.4 16 #18 °5PieEE A 10 tt20 |30 40 50<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>a Ta = 25°C _ VIFCE= 20 mA  = 5 V i 0 V ee CElx = 10 V ==<br>e e IF = 50 mA ee<br>; a ——_ ee<br>IF = 40 mA<br>deer|(ia Tt |- =90 awa ™~ 10SeeLebel=== a aSaaSSSpfctlSaaSboo<br>IF = 30 mA<br>| a se IF = 20 mA 80 ————<br>Ae ee 0.1 haalte<br>IF = 10 mA<br>| aaaen ee e 7° 001 ==peSSSet<br>Poie] 1 2 3 4 re 5 6 7 8 9 10 05Po-20 0 20 40 |60 80 100 0.001a=-20 -10 0 10 20 30 40 50 60 70 80 90<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>10,000PnaeeSe 0SS0 ee | VTa = 25CC = 5 V  |ry °C a 100120 VTa = 25IFCE= 20 mA  a  = 10 V °C  100120 ~ Ta = 25IVFCE= 20 mA  = 10 V °C<br>ood0 FeSenet cecal &0 (Center of optical axis) arnt‘ 80 \ |<br>ai eT PT \ an Pl 60 || | iN d H|HS ;<br>Se eee ett °° \ *<br>PE he<br>Ce © rill 40 N lil<br>volatileerr ll 20 20 | | \<br>0.01LEMEet ehO41 Ty1 10 ; Pe}05 025 0 025ELE05 O75 10 | 0−2.0 PF] −1.5 −1.0 tf} −0.5  iL 0 0.5 IN 1.0 1.5 2.0<br>Load resistance RL (kΩ) Distance d (mm) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —J Le<br>—t<br>90 %<br>Output 10 %<br>° ft } ———~t<br>tr tf<br>Input i vec<br>Ly =<br>Output<br> (mW)  (mA)<br> (mA) C F<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)  (nA)<br>L D<br>Light current  I Dark current   I<br>Relative light current  I<br>s)  (%)<br>μ  (%) L<br>Response time tr, tf ( L Relative light current  I (Center of optical axis)<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1041** Photomicrosensor (Transmissive) 

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