# Dual MOSFET, N Channel, 24 V, 24 V, 10 A, 10 A, 0.014 ohm

![Product image](https://novapart.co/image/farnell:2724447/)

**URL**: https://novapart.co/products/ECH8651R-TL-H/dual-mosfet-n-channel-24-v-10-a-0014-ohm
**SKU**: ECH8651R-TL-H
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2800
**Stock**: 10+
**Lead Time**: 141 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:24V; On Resistance Rds(on):0.0105ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-28FL |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 1.4W |
| Power Dissipation P Channel | 1.4W |
| Drain Source Voltage Vds N Channel | 24V |
| Drain Source Voltage Vds P Channel | 24V |
| Continuous Drain Current Id N Channel | 10A |
| Continuous Drain Current Id P Channel | 10A |
| Drain Source On State Resistance N Channel | 0.014ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2724447/)

## **Ordering number : ENA1010A ECH8651R** ~~—__~~ @ **N-Channel Power MOSFET** http://onsemi.com **24V, 10A, 14m** Ω **, Dual ECH8** 

## **Features** 

- Low ON-resistance 

- 2.5V drive 

- Common-drain type 

   - Built-in gate protection resistor 

   - Best suited for LiB charging and discharging switch 

   - Halogen free compliance 

- Protection diode in 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain-to-Source Voltage<br>VD|VDSS||24|V|
|Gate-to-Source Voltage<br>V|VGSS||±12|V|
|Drain Current(DC)<br>ID|ID||10|A|
|Drain Current(Pulse)<br>IDP|IDP|PW≤10μs, dutycycle≤1%|60|A|
|Allowable Power Dissipation<br>PD|PD|When mounted on ceramic substrate (900mm<br>2×0.8mm) 1unit|1.4|W|
|Total Dissipation<br>PT|PT|When mounted on ceramic substrate(900mm<br>2×0.8mm)|1.5|W|
|Channel Temperature<br>Tch|Tch||150|°C|
|Storage Temperature<br>Tstg|Tstg||--55 to +150|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Package Dimensions** 

unit : mm (typ) 7011A-003 

## **Product & Package Information** 

- Package 

: ECH8 

- JEITA, JEDEC : - 

- Minimum Packing Quantity : 3,000 pcs./reel 

**==> picture [362 x 245] intentionally omitted <==**

**----- Start of picture text -----**<br>
Top View ECH8651R-TL-H<br>Packing Type : TL<br>2.9<br>0.15<br>8 5<br>0 to 0.02<br>TL<br>;<br>1 4 Electrical Connection<br>0.65 0.3<br>8 7 6 5<br>1 : Source1<br>2 : Gate1<br>3 : Source2<br>4 : Gate2<br>5 : Drain<br>6 : Drain<br>7 : Drain 1 2 3 4<br>8 : Drain<br>™ | |BA<br>Bottom View ECH8<br>0.25<br>2.8 2.3<br>0.25<br>0.9<br>0.07<br>**----- End of picture text -----**<br>


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Packing Type : TL Marking<br>**----- End of picture text -----**<br>


**WV** Lot No. 

Semiconductor Components Industries, LLC, 2013 **July, 2013** 

50912 TKIM/40908PE TIIM TC-00001313  No. A1010-1/7 

**ECH8651R** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|24|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=20V, VGS=0V|||1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±8V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=10V, ID=1mA|0.5||1.3|V|
|Forward Transfer Admittance|| yfs||VDS=10V, ID=5A|5.5|9.5||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=5A, VGS=4.5V|7|10.5|14|mΩ|
||RDS(on)2|ID=5A, VGS=4.0V|7.2|11|15|mΩ|
||RDS(on)3|ID=5A, VGS=3.1V|7.5|12.5|17.5|mΩ|
||RDS(on)4|ID=2.5A, VGS=2.5V|9|15|21|mΩ|
|Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||300||ns|
|Rise Time|tr|||1000||ns|
|Turn-OFF Delay Time|td(off)|||4000||ns|
|Fall Time|tf|||2500||ns|
|Total Gate Charge|Qg|VDS=10V, VGS=10V, ID=10A||24||nC|
|Gate-to-Source Charge|Qgs|||2||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||4.5||nC|
|Diode Forward Voltage|VSD|IS=10A, VGS=0V||0.77|1.2|V|



## **Switching Time Test Circuit** 

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VIN VDD=10V<br>4.5V<br>0V<br>ID=5A<br>VIN<br>RL=2 Ω<br>D VOUT<br>PW=10 μ s<br>D.C. ≤ 1%<br>G Rg<br> ECH8651R<br>P.G 50 Ω S<br>Rg=1k Ω<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|Device|Package|Shipping|memo|
|---|---|---|---|
|ECH8651R-TL-H|ECH8|3,000pcs./reel|Pb Free and Halogen Free|



No. A1010-2/7 

**ECH8651R** 

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**----- Start of picture text -----**<br>
ID  --  VDS RDS(on)  --  VGS<br>10 40<br>Ta=25°C<br>9<br>35<br>8<br>30<br>7<br>25<br>6<br>5 20 ID=2.5A<br>5.0A<br>4<br>15<br>3<br>10<br>2<br>5<br>1<br>VGS=1V<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10<br>Drain-to-Source Voltage, VDS  --  V IT13148 Gate-to-Source Voltage, VGS  --  V IT13149<br>RDS(on)  --  Ta | yfs  |   --  ID<br>30 10<br>VDS=10V<br>25 7<br>5<br>20<br>15<br>3<br>10<br>2<br>5<br>0 1.0<br>--50 0 50 100 150 200 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Ambient Temperature, Ta  --  °C IT13150 Drain Current, ID  --  A IT13151<br>IS  --  VSD SW Time  --  ID<br>10 1000<br>75 V GS =0V 7 VDD=10V<br>3 5 VGS=4V<br>2<br>1.0 3<br>7<br>5<br>2<br>3<br>2<br>0.1 1000<br>7<br>5 7<br>3 5<br>2<br>0.01 3<br>7<br>5<br>2<br>3<br>2<br>0.001 100<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Diode Forward Voltage, VSD  --  V IT13152 Drain Current, ID  --  A IT13295<br>VGS  --  Qg A S O<br>4.5 2<br>4.0 VDS=10VID=10A 1007 IDP=60A PW≤10μs<br>5<br>3<br>3.5 2<br>10<br>3.0 7<br>5<br>2.5 3<br>2<br>2.0 1.07<br>5 Operation in this<br>1.5 3 area is limited by RDS(on).<br>2<br>1.0 0.17 Ta=25°C<br>5 Single pulse<br>0.5 3 When mounted on ceramic substrate<br>2<br>0 0.01 (900mm [2] ✕0.8mm) 1unit<br>0 5 10 15 20 25 30 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5<br>Total Gate Charge, Qg  --  nC IT13296 Drain-to-Source Voltage, VDS  --  V IT13390<br>ID=10A<br>tf<br>td(on)<br>tr<br>td(off)<br>VGS=4.0V, ID=5A<br>VGS=4.5V, ID=5A<br>1.5V<br>VGS=2.5V, ID=2.5A<br>VGS=3.1V, ID=5A<br>°C<br>75<br>10ms<br>1ms<br>DC operation<br>100<br>μs<br>100ms<br>°C<br>25<br>°C<br>Ta= --25<br>Ta=75°C<br>2.5V<br>25°C<br>°C<br>--25<br>3.1V<br>4V<br>4.5V<br>Ω<br>Drain Current, ID  --  A<br>Static Drain-to-Source On-State Resistance, RDS(on)  --  m<br>Ω<br>|  --  S<br>fs<br>y<br>|<br>Static Drain-to-Source On-State Resistance, RDS(on)  --  m<br>Forward Transfer Admittance,<br>Source Current, IS  --  A<br>Switching Time, SW Time  --  ns<br>Drain Current, ID  --  A<br>Gate-to-Source Voltage, VGS  --  V<br>**----- End of picture text -----**<br>


No. A1010-3/7 

**ECH8651R** 

**==> picture [217 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
PD  --  Ta<br>1.8<br>When mounted on ceramic substrate<br>1.6 (900mm [2] ✕0.8mm)<br>1.5<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C IT13154<br>Total Dissipation1unit<br>Allowable Power Dissipation, PD  --  W<br>**----- End of picture text -----**<br>


No. A1010-4/7 

**ECH8651R** 

## **Embossed Taping Specifi cation** 

ECH8651R-TL-H 

**==> picture [162 x 36] intentionally omitted <==**

No. A1010-5/7 

**ECH8651R** 

**==> picture [82 x 22] intentionally omitted <==**

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Outline Drawing<br> ECH8651R-TL-H<br>**----- End of picture text -----**<br>


## **Land Pattern Example** 

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Mass (g) Unit Unit: mm<br>0.02<br>* For reference [mm]<br>0.4<br>0.65<br>0.6<br>2.8<br>**----- End of picture text -----**<br>


No. A1010-6/7 

**ECH8651R** 

Note on usage : Since the  ECH8651R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No. A1010-7/7 



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