# Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 2 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943188RL/)

**URL**: https://novapart.co/products/DZT5551Q-13/bipolar-bjt-single-transistor-npn-160-v-600-ma-2-w
**SKU**: DZT5551Q-13
**Manufacturer**: DIODES INC.
**Price**: €0.1400
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | DZT Series |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 130MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 160V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943188RL/)

**DZT5551Q** 

## **160V NPN VOLTAGE TRANSISTOR IN SOT223** 

## **Description** 

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. 

## **Features** 

- BVCEO > 160V 

- BVEBO > 6V 

- IC = 600mA Continuous Collector Current 

- Low Saturation Voltage (150mV max @10mA) 

- hFE specified up to 50mA for a high gain hold up 

- Complementary PNP Type: DZT5401 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Mechanical Data** 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin. Solderable per MIL-STD-202, Method 208 

- Weight: 0.112 grams (Approximate) 

## **Applications** 

   - High Voltage Amplification Applications 

   - High Voltage Switching 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

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SOT223<br>**----- End of picture text -----**<br>


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Top View<br>**----- End of picture text -----**<br>


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Device Schematic  Pin-Out Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DZT5551Q-13|K4N|13|12|2,500|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" 

and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_grade_definitions/. 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SOT223 

K4N = Product Type Marking Code |Bh = Manufacturer’s Code Marking YWW = Date Code Marking Y = Last Digit of Year ex: 5 = 2015 WW = Week Code 01 ~ 53 

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**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|180|V|
|Collector-Emitter Voltage|VCEO|160|V|
|Emitter-Base Voltage|VEBO|6|V|
|Continuous Collector Current|IC|600|mA|
|Peak Collector Current|ICM|1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)|PD|2|W|
|Thermal Resistance, Junction to Ambient(Note 6)|RJA|62.5|°C/W|
|Thermal Resistance, Junction to Leads(Note 7)|RJL|34.05|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge- MachineModel|ESD MM|400|V|C|



Notes: 6. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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## **Thermal Characteristics and Derating Information** 

**==> picture [465 x 349] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 En V 2.00 a<br>CE(sat) 1.75<br>eS Limited PTS SSSSONSCONS 1.50 rf ING X 50mmx50mmx1.6mm<br>100 m DC 1.25 1oz Copper<br>Eee ———— 1s Ee —— EA \<br>a SSS | | | Ng<br>1.00<br>100ms<br>Pity Single Pulse ft TAT NN | 0.75 f | ft UN fT | |<br>10 m pw Tamb=25°C 10ms SIS 0.50 ESN<br>50mmx50mmx1.6mm 1ms<br>0.25<br>1oz Copper 100µs<br>1 m 1 Hiir 10 J HEni 100 0.000 PFPot 20 tT 40 | | ct 60 | 80 |EE 100 | 120 cEKE 140 160<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>70 100<br>60 T amb =25°C SinT gle Pulse=25°C<br>50mmx50mmx1.6mm 1 tteg aul PT TT a amb mitt}<br>50 1oz Copper 1 “afililll RCT eT ETAT 50mmx50mmx1.6mm rh<br>a EH HE il<br>1oz Copper<br>40 D=0.5<br>10<br>30 SEag eT e i} rra - entTT STNUBn TCITT  y |l<br>TTTImanii,p*:<br>D=0.2<br>20 ARN e” QAR ALTAHt SasiFHaed aati at a<br>srr Single Pulse ee He<br>BD a bbilibesestsa | gen ru ST ET TTMn. ai<br>D=0.05<br>10 rer il Bt TT<br>Set D=0.1 TA TTI<br>100µ0 ST 1m [CCM] He 10m tH [CHM] 100m Cs 1 ull [ull] 10 CC 100 CT 1k 100µ1 WMATA 1m 10m 100m 1 ID 10 CTE 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)<br>C<br>I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

**Pulse Power Dissipation** 

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**DZT5551Q** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**|||||||
|Collector-Base Breakdown Voltage<br>~~ee~~|BVCBO<br>~~ee~~|180<br>~~ee~~|270<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IC= 100µA,IE= 0<br>~~ee~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~ee~~<br>~~—~~|BVCEO<br>~~ee~~|160<br>~~ee~~<br>~~A~~|200<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IC= 1mA,IB= 0<br>~~ee~~|
|Emitter-Base Breakdown Voltage<br>~~ee~~<br>~~—~~|BVEBO<br>~~ee~~|6.0<br>~~ee~~<br>~~A~~|7.85<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IE= 100µA,IC= 0<br>~~ee~~|
|Collector Cutoff Current<br>~~SO~~<br>~~—~~|ICBO<br>~~SO~~|—<br>—<br>~~SO~~<br>~~A~~|<1<br>—<br>~~SO~~|50<br>50<br>~~SO~~|nA<br>µA<br>~~SO~~|VCB= 120V, IE= 0<br>VCB= 120V,IE= 0,TA= +100°C<br>~~SO~~|
|Emitter Cutoff Current<br>~~—a~~|IEBO|—<br>~~A~~|<1|50|nA|VEB= 4V,IC= 0|
|~~— a~~||~~A~~|||||
|**ON CHARACTERISTICS(Note 9)**<br>~~A~~<br>~~— ~~<br>~~OO~~|||||||
|Collector-Emitter Saturation Voltage<br>~~OO~~|VCE(sat)<br>~~OO~~|—<br>—<br>~~OO~~|65<br>115<br>~~OO~~|150<br>200<br>~~OO~~|mV<br>mV<br>~~OO~~|IC= 10mA, IB= 1mA<br>IC= 50mA,IB= 5mA<br>~~OO~~|
|Base-Emitter Saturation Voltage<br>~~OO~~|VBE(sat)<br>~~OO~~<br>~~ee~~|—<br>—<br>~~OO~~<br>~~ee~~|760<br>840<br>~~OO~~<br>~~ee~~|1,000<br>1,200<br>~~OO~~<br>~~ee~~|mV<br>mV<br>~~OO~~<br>~~ee~~|IC= 10mA, IB= 1mA<br>IC= 50mA,IB= 5mA<br>~~OO~~|
|DC Current Gain<br>~~es~~|hFE<br>~~es~~<br>~~ee~~|80<br>80<br>30<br>~~es~~<br>~~ee~~|130<br>145<br>65<br>~~es~~<br>~~ee~~|—<br>250<br>—<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|IC= 1mA, VCE= 5V<br>IC= 10mA, VCE= 5V<br>IC= 50mA,VCE= 5V<br>~~es~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~ee~~<br>~~ee ee~~<br>~~Le~~|||||||
|Transition Frequency<br>~~Le~~|fT<br>~~Le~~|100<br>~~Le~~<br>~~OO~~|130<br>~~Le~~<br>~~OO~~|300<br>~~Le~~<br>~~OO~~|MHz<br>~~Le~~|VCE= 10V, IC= 10mA,<br>f = 100MHz<br>~~Le~~|
|Small Signal Current Gain<br>~~LO~~<br>~~a~~|hfe<br>~~LO~~<br>~~ef~~|50<br>~~LO~~<br>~~OO~~<br>~~ef~~|—<br>~~LO~~<br>~~OO~~<br>~~ef~~|260<br>~~LO~~<br>~~OO~~<br>~~ef~~|—<br>~~LO~~<br>~~ef~~|VCE= 10V, IC= 10mA,<br>f = 1kHz<br>~~LO~~|
|Output Capacitance<br>~~Cf~~<br>~~a~~|Cobo<br>~~Cf~~<br>~~ef~~|—<br>~~OO~~<br>~~Cf~~<br>~~ef~~|—<br>~~OO~~<br>~~Cf~~<br>~~ef~~|6<br>~~OO~~<br>~~Cf~~<br>~~ef~~|pF<br>~~Cf~~<br>~~ef~~|VCB= 10V,f = 1MHz<br>~~Cf~~|
|Noise Figure<br>~~a~~<br>~~——<—~~|NF<br>~~ef~~|—<br>~~ef~~|—<br>~~ef~~|8<br>~~ef~~<br>~~ee~~|dB<br>~~ef~~<br>~~ee~~|VCE= 5.0V, IC= 200µA,<br>RS= 1.0kΩ,f = 1.0kHz<br>~~ee~~|
|DelayTime<br>~~——<—~~|td|—|95|—<br>~~ee~~|ns<br>~~ee~~|VCC= 10V, IC= 10mA,<br>IB1= -IB2= 1mA<br>~~ee~~|
|Rise Time<br>~~——<—~~|tr|—|64|—<br>~~ee~~|ns<br>~~ee~~||
|Storage Time<br>~~——<—~~|ts|—|1,256|—<br>~~ee~~|ns<br>~~ee~~||
|DelayTime<br>~~——<—~~|tf|—|140|—<br>~~ee~~|ns<br>~~ee~~||



Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. 

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## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
1 0.7<br>Tamb=25°C I /I =10<br>0.6 C B<br>PT CT TTT TA ATT 0.5 ||<br>ee ee es ee ee 150°C Ti<br>0.4<br>CIAL 100°C<br>100m TT)PT TTT || KLLe I C /I B =50 | 0.3 EEEoeen, 25°C yy s/n<br>0.2 -55°C<br>I /I =20<br>C B<br>I /I =10 0.1<br>C B<br>eee 0.0 ——<br>1m 10m 100m 10m 100m<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.2<br>1.6 150°C Ta=25°C 200 I C /I B =10<br>1.4 V CE =5V 1.0 25°C -55°C<br>1.2 mnieee 100°C Coemits H 150 | | RyiLa\ TT<br>1.0 en emWh 0.8 LTTaS  |eeeLTin<br>oS Co rf it are<br>0.8 25°C Lo 100 a en<br>0.6<br>0.6 ooHSErk \AN It re]=ee| sseeeeTee<br>0.4 - -55°C ek Vi 50 0.4 — 150°C 100°C<br>0.2 need Ve rT<br>EI eT es tt<br>0.0 P= cre ce EC 0 0.2 PE TE EET<br>100µ 1m 10m 100m 1m 10m 100m<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>V =5V<br>1.0 CE -55°C<br>as 25°C<br>ee<br>0.8 er<br>a atte<br>0.6<br>100°C<br>0.4 peer et 150 ° C<br>APE tt<br>1m 10m 100m<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

**==> picture [412 x 218] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 Q<br>C<br>ee — SOT223<br>Dim  Min  Max  Typ<br>A 1.55  1.65  1.60<br>7 t rfee[| [| | |<br>A1 0.010 0.15  0.05<br>b1 2.90  3.10  3.00<br>ll E E1 ee b2 0.60  ee 0.80  0.70<br>C 0.20  0.30  0.25<br>D 6.45 6.55 6.50<br>Gauge<br>Plane Lt =o E 3.45 3.55 3.50<br>e 0.25 e —— E1 6.90 7.10 7.00<br>SeatingPlane Y Yq- L ee e e es ee —  —  4.60<br>e1 —  —  2.30<br>e1 b L 0.85  1.05  0.95<br>> > e TL | es Q 0.84  0.94  0.89<br>All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

**==> picture [154 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
iT X1 —<br>Y1<br>C1 Y2<br>Y vaca al<br>ooo<br>X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.30|
|**C1 **|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/dzt5551q-13/trans-npn-160v-0-6a-150deg-c-2w/dp/3943188RL)
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