# Bipolar (BJT) Single Transistor, PNP, 150 V, 600 mA, 1 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943187RL/)

**URL**: https://novapart.co/products/DZT5401-13/bipolar-bjt-single-transistor-pnp-150-v-600-ma-1-w
**SKU**: DZT5401-13
**Manufacturer**: DIODES INC.
**Price**: €0.1190
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | DZT Series |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 150V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943187RL/)

**DZT5401** J 

## DIODES 

## **150V PNP SMALL SIGNAL TRANSISTOR IN SOT223** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -150V 

- IC = -600mA high Collector Current 

- Ideal for Medium Power Switching or Amplification Applications 

- Complementary PNP Type: DZT5551 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- Case: SOT223 

- Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.112 grams (Approximate) 

## **Applications** 

- Amplifiers 

- Power Supplies 

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## **Ordering Information** (Note 4) 

|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|---|
|DZT5401-13|Standard|K4M|13|12|2,500|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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K4M = Product Type Marking Code YWW = Manufacturer’s Code Marking YWW = Date Code Marking K4M Y = Last Digit of Year (ex: 7 = 2017) WW = Week Code (01 to 52) 

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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

December 2017 © Diodes Incorporated 

**DZT5401** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-160|V|
|Collector-Emitter Voltage|VCEO|-150|V|
|Emitter-Base Voltage|VEBO|-6|V|
|Collector Current|IC|-600|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation @TA= +25°C|(Note 5)|PD|1|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C|(Note 5)|RθJA|125|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-65 to +150|°C|



## **ESD Ratings** (Note 6) 

|**ESD Ratingsgss **(Note 6)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the collector lead on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

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**DZT5401** 

## **Thermal Characteristics and Derating Information** 

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1.0 PN EE<br>0.8<br>PEN EI<br>0.6<br>0.4 PET<br>0.2<br>0 wel ELA LIN | N<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( 癈 °C )<br>Fig. 1 Max Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

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**DZT5401** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|De|Characteristic|Symbol|Min|GQ|Typ|Max|OO|Unit|Test Condition|
|Ce|OFF CHARACTERISTICS|
|Collector-Base Breakdown Voltage|BVCBO|-160|—|—|V|IC = -100µA, IE = 0|
|PeQOQf|Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage|BVBVCEOEBO|-150 -6|——|——|QOGO|V V|(|IICE = -10 = -1mA, IµA, IBC = 0 = 0|
|Collector-Base Cut-off Current|ICBO|—|—|-50|nA|VCB = -120V, IE = 0|
|ee|µA|VCB = -120V, IE = 0,|TA = +150°C|
|QO|Emitter-Base Cut-off Current|es|IEBO|ee|—|ee|—|-50|DO|nA|VEB = -3V, IC = 0|
|||ON CHARACTERISTICS (Note 7)|
|—|—|-0.2|IC = -10mA, IB = -1mA|
|Collector-Emitter Saturation Voltage|VCE(SAT)|—|—|-0.5|V|IC = -50mA, IB = -5mA|
|Base-Emitter Saturation Voltage|VBE(SAT)|—|—|-1.0|V|IC = -10mA, IB = -1mA|
|IC = -50mA, IB = -5mA|
|50|—|—|IC = -1mA, VCE = -5V|
|Static Forward Current Transfer Ratio|hFE|60|—|240|—|IC = -10mA, VCE = -5V|
|50|—|—|IC = -50mA, VCE = -5V|
|Ce|SMALL SIGNAL CHARACTERISTICS|
|Transition Frequency|fT|100|—|300|MHz|VCE = -10V, IC = -10mA,|
|f = 100MHz|
|eeGG|Output Capacitance|Cobo|ee|ee|—|—|ee|6|OO|pF|VCB = -10V, f = 1MHz, IE = 0|
|Small Signal Current Gain|hFE|40|—|260|—|VCE = -10V, IC = -1.0mA,|
|f = 1.0kHz|
|VCE = -5.0V, IC = -200A,|
|Noise Figure|NF|—|—|8|dB|
|eeee|ee|RS = 10|f = 1.0kHz|
|Note:|7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.|
|Typical Electrical Characteristics|(@TA = +25°C, unless otherwise specified.)|

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0.25 250<br>IB = -10mA<br>IB = -8mA<br>IB = -6mA<br>0.20 A 200 Ot<br>Tee = HO<br>IB = -4mA<br>0.15 150<br>IB = -2mA<br>pete pe<br>0.100.05 KeceTPT |b  eco 10050 lll<br>ba = GeoN<br>0.00 POT 0 TTINTI<br>0 1 2 3 4 5 6 7 8 9 10 0.001 0.01 0.1 1<br>-VCE, COLLECTOR-EMITTER VOLTAGE (V) - lo, COLLECTOR CURRENT (A)<br>Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage Fig . 3 Typical DC Current Gain vs . Collector Current<br>C<br>, COLLECTOR CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

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**DZT5401** Cd 

## **Typical Electrical Characteristics** (Cont.) 

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0.250.3 CP | LI] TAI 1.21 P E CETTEEETI TEI<br>0.2 TE IM Hg 0.8 Se TTI ETI TT<br>/f a)<br>Hf) MA ey<br>0.150.1 eet /fif 0.60.4 | Aer| pte eeeLy WaEI<br>=a MEY TH Ail ee Coa CA CU<br>ey eee atta MM<br>0.05 re Se, all 0.2 See tll<br>At  Lan Fm eet<br>0 AE TE 0 aee mill<br>0.0001 0 . 001 0.01 0.1 0.0001 0.001 0.01 0.1 1<br>-IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (A)<br>Fig. 4 Typical Collector-Emitter Saturation Voltage Fig. 5 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current vs. Collector Current<br>1.21 PIMIECM TEUPMTIEETI=le TT 706050 UMM=ICSC Su IW TH] f = 1MHz I<br>0.8<br>40<br>cemctimeecmeti = & TIMETMNT<br>0.6 ein ee ee aa wl IN Cibo<br>camer 30 CUMIN NET<br>re TT TU 5 \<br>0.4<br>20<br>em<br>0.2 AT a 10 conteNTE<br>PI TL Cobo ll<br>0 LUTTE UI TEI TlEa 0 Bee aayTit++tt man<br>0.0001 0.001 0.01 0.1 1 0.01 0.1 1 10 100<br>-IC, COLLECTOR CURRENT (A) VR, REVERSE VOLTAGE (V)<br>Fig. 6 Typical Base-Emitter Saturation Voltage  Fig. 7 Typical Capacitance Characteristics<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>-V<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>-V<br>CE(SAT)<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>-V<br>**----- End of picture text -----**<br>


vs. Collector Current 

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300<br>250<br>200<br>150<br>100<br>VCE = -10V<br>f = 100MHz<br>50<br>0<br>0 20 40 60 80 100<br>-IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current<br>T<br>, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)<br>f<br>**----- End of picture text -----**<br>


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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

December 2017 © Diodes Incorporated 

**DZT5401** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT223<br>D<br>b1 Q<br>C<br>SOT223<br>Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15 0.05<br>b 0.60 0.80 0.70<br>E E1<br>b1 2.90  3.10  3.00<br>|| ==== C 0.20  0.30  0.25<br>Gauge<br>Plane D 6.45  6.55  6.50<br>0.25 E 3.45  3.55  3.50<br>SeatingPlane Ho L SES E1 6.90  7.10  7.00<br>e -  -  4.60<br>e1 b e1 -  -  2.30<br>oanoe e ao ee L 0.85  1.05  0.95<br>Q 0.84  0.94  0.89<br>All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT223<br>X1<br>Y1<br>Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>=a X1  3.30<br>C1 Y2<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>Y<br>p X oo C =<br>Note:   For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between<br> device terminals and PCB tracking.<br>**----- End of picture text -----**<br>


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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

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**DZT5401** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

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DZT5401 Datasheet Number: DS31218 Rev. 3 - 2 

December 2017 © Diodes Incorporated 



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