# Bipolar (BJT) Single Transistor, PNP, 25 V, 3 A, 3.4 W, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3828458RL/)

**URL**: https://novapart.co/products/DXTP07025BFGQ-7/bipolar-bjt-single-transistor-pnp-25-v-3-a-34-w
**SKU**: DXTP07025BFGQ-7
**Manufacturer**: DIODES INC.
**Price**: €0.1830
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 3.4W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 160MHz |
| Transistor Case Style | PowerDI 3333 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3828458RL/)

**DXTP07025BFGQ** CS 

## **25V PNP LOWSAT TRANSISTOR IN PowerDI3333-8** 

## **Features** 

- BVCEO > -25V 

- Small Form Factor Thermally Efficient Package. Enables Higher Density End Products 

- IC = -3A High Continuous Current 

- ICM = -8A Peak Pulse Current 

- Low Saturation Voltage VCE(sat) < -200mV @ -1A 

- Complementary NPN Type: DXTN07025BFG 

## **Mechanical Data** 

   - Case: PowerDI[®] 3333-8 

   - Case Material: Molded Plastic. “Green” Molding Compound; UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 

   - Weight: 0.03 grams (Approximate) 

- Rated to +175°C – Ideal For High Temperature Environment 

- Wettable Flank For Improved Optical Inspection 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DXTP07025BFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

## **Applications** 

- High-Side Switch 

- Low Drop Out Regulator 

- MOSFET or IGBT Gate Driving 

**https://www.diodes.com/quality/product-definitions/** 

PowerDI3333-8 (SWP) (Type UX) 

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Equivalent Circuit<br>C<br>C<br>C<br>C<br>B<br>E<br>E<br>E<br>@ 2? <<br>Pin1<br>Top View  Bottom View  Device Symbol<br>g Information  Information  (Note 4)<br>Part Number  Compliance  Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel<br>DXTP07025BFGQ-7  Automotive  2H9  7  12  2,000<br>**----- End of picture text -----**<br>


## **Ordering Information  Information** (Note 4) 

Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

PowerDI3333-8 (SWP) (Type UX) 

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2H9<br>YYWW<br>**----- End of picture text -----**<br>


2H9= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DXTP07025BFGQ Document Number DS42145 Rev. 1 - 2 

March 2021 © Diodes Incorporated 

**DXTP07025BFGQ** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|-35|V|
|Collector-Emitter Voltage|VCEO|-25|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-3|A|
|Peak Pulse Current|ICM|-8|A|

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## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|(Note 5)|1.1|W|
|Power Dissipation|(Note 6)|PD|2.3|W|
|(Note 7)|3.4|W|
|(Note 5)|140|C/W|
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|65|C/W|
|(Note 7)|44|C/W|
|Thermal Resistance, Junction to Leads (Note 8)|RθJL|8.5|C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +175|C|

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## **ESD Ratings** (Note 9) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|JEDEC Class|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|

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Notes: 5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 

7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 

8. Thermal resistance from junction to solder-point (at the collector tab). 

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**DXTP07025BFGQ** 

## **Thermal Characteristics and Derating Information** 

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**DXTP07025BFGQ** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|OC|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|GG|Collector-Base Breakdown Voltage|BVCBO|-35|-71|—|V|IC = -100µA|
|po|Collector-Emitter Breakdown Voltage (Note 10)|BVCEO|-25|-42|—|V|IC = -10mA|
|Ge|Emitter-Base Breakdown Voltage|BVEBO|-7|-8.3|—|V|IE = -100µA|
|—|—|-20|nA|VCB = -30V|
|Collector Cut-Off Current|ICBO|
|—————|———eeeeEeEeeCC|—|—|-10|CO|µA|VCB = -30V, TA = +125°C|
|GG|Emitter Cut-Off Current|IEBO|—|—|-20|nA|VEB  = -6V|
|—|-64|-200|mV|IC = -1A, IB = -100mA|
|Collector-Emitter Saturation Voltage (Note 10)|VCE(sat)|
|Be|—|-164|-400|mV|IC = -3A, IB = -300mA|—|
|po|Base-Emitter Saturation Voltage (Note 10)|VBE(sat)|—|-0.86|-1|V|IC = -1A, IB = -100mA|
|Ge|Base-Emitter Turn-On Voltage (Note 10)|VBE(on)|CC|—|-0.77|-0.9|CO|V|IC = -1A, VCE = -2V|
|a|70|196|ee|—|—|IC = -50mA, VCE = -2V|
|a|100|174|300|—|IC = -1A, VCE = -2V|
|DC Current Gain (Note 10)|hFE|
|a|75|153|ee|—|—|IC = -2A, VCE = -2V|
|pT|40|94|—|—|IC = -6A, VCE = -2V|
|VCE = -5V, IC = -100mA|
|Current Gain-Bandwidth Product|fT|100|160|—|MHz|
|ee|f = 100MHz|
|Turn-On Time|ton|—|40|—|ns|VCC = -10V, IC = -500mA|
|SeeG|Turn-Off Time|nnn|toff|nnee|—|450|ne|—|EE|ns|IB1 = -IB2 = -50mA|
|ee|Output Capacitance|es|Cobo|—|Ge|55|GQ|100|pF|VCB = -10V, f = 1MHz|
|Note:|10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.|

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**DXTP07025BFGQ** eee 

## tu cCORPORATE D® 

**Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**DXTP07025BFGQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8 (SWP) (Type UX)<br>D<br>A PowerDI3333-8 (SWP)<br>D1 A1 (Type UX)<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>A1  0.00 0.05 --<br>b 0.25 0.40 0.32<br>c 0.10 0.25 0.15<br>E1 E<br>D  3.20 3.40 3.30<br>D1  2.95 3.15 3.05<br>D2  2.30 2.70 2.50<br>E  3.20 3.40 3.30<br>0 E1  2.95 3.15 3.05<br>E2  1.60 2.00 1.80<br>Detail A i c — E3 0.95 1.35 1.15<br>E4  0.10 0.30 0.20<br>Detail A<br>L e    0.65<br>k  0.50 0.90 0.70<br>L  0.30 0.50 0.40<br>E3 E4 θ  0° 12° 10°<br>E2<br>All Dimensions in mm<br>i fo S Eber<br>0.050<br>D2 0.150<br>k<br>L<br>ee Cai<br>e<br>b Jee<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8 (SWP) (Type UX)** 

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X3<br>X1<br>X2<br>Y1<br>Y2<br>Y5 Y4<br>Y6<br>e X4<br>Y3<br>Y<br>X<br>“DOM C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3 2.600<br>X4  3.500<br>Y  0.700<br>Y1  0.550<br>Y2  1.650<br>Y3 0.600<br>Y4  2.450<br>Y5 0.400<br>Y6  3.700<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes        products       are        provided       subject        to       Diodes’        Standard       Terms       and       Conditions       of       Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/dxtp07025bfgq-7/bipolar-transistor-25v-3a-3-4w/dp/3828458RL)
---

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