# Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 2.5 W, PowerDI5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943179/)

**URL**: https://novapart.co/products/DXTN3C60PSQ-13/bipolar-bjt-single-transistor-npn-60-v-3-a-25-w
**SKU**: DXTN3C60PSQ-13
**Manufacturer**: DIODES INC.
**Price**: €0.2110
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | DXT Series |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 140MHz |
| Transistor Case Style | PowerDI5060 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943179/)

**Green** ~~&~~ 

## **DXTN3C60PSQ** 

## **60V 175°C NPN LOW SAT MEDIUM POWER TRANSISTOR IN POWERDI5060-8** 

## **Features** 

- BVCEO > 60V 

- IC= 3A Continuous Collector Current 

- ICM = 8A Peak Pulse Current 

- RCE(sat) <90mΩ 

- Rated to +175C – Ideal for High Ambient Temperature Environments 

- Wettable Flank for Improved Optical Inspection 

## **Mechanical Data** 

   - Case: PowerDI[®] 5060-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 3 per J-STD-020 

   - Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.097 grams (Approximate) 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DXTN3C60PSQ is suitable for automotive applications requiring specific change control; it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Power Management 

- Load Switch 

- Linear Mode Voltage Regulator 

- Backlighting Applications 

PowerDI5060-8 (SWP) (Type Q) 

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Pin1<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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C<br>B<br>E<br>Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|---|---|
||||||||
||**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
||DXTN3C60PSQ-13|Automotive|DXTN3C60PS|13|12|2,500|



Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
DXTN3<br>C60PS<br>N12D60CYYWW<br>YYWW<br>**----- End of picture text -----**<br>


DXTN3 = Product Type Marking Code C60PS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DXTN3C60PSQ Document number: DS40380  Rev.3 - 2 

October 2019 © Diodes Incorporated 

**DXTN3C60PSQ** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|60|V|
|Emitter-Base Voltage|VEBO|7|V|
|Base Current|IB|500|mA|
|Continuous Collector Current|IC|3|A|
|Peak Pulse Collector Current|ICM|8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|2.5|W|
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|60|C/W|
||(Note 6)||140||
|Thermal Resistance, Junction to Lead|(Note 7)|RθJL|5.7|C/W|
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +175|C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as note (5), except mounted on minimum recommended pad layout. 

7. Thermal resistance from junction to solder point (at the collector tab). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**DXTN3C60PSQ** ~~J~~ 

## **Typical Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

3 of 7 **www.diodes.com** 

DXTN3C60PSQ Document number: DS40380  Rev.3 - 2 

October 2019 © Diodes Incorporated 

**DXTN3C60PSQ** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~RD~~|**Symbol**<br>~~RD~~<br>~~ns~~|**Min**<br>~~RD~~<br>~~GR~~|**Typ**<br>~~RD~~<br>~~G(R~~|**Max**<br>~~RD~~<br>~~G(R~~|**Unit**<br>~~RD~~<br>~~I~~|**Test Condition**<br>~~RD~~|
|**OFF CHARACTERISTICS**<br>~~nsGR G(R~~<br>~~I~~<br>~~Pee~~|||||||
|Collector-Base Breakdown Voltage|BVCBO|60<br>~~(OU~~|—<br>~~(OU~~|—<br>~~(~~|V<br>~~(~~|IC= 100µA|
|Collector-Emitter Breakdown Voltage (Note 9)<br>~~(RD~~<br>~~pe~~|BVCEO<br>~~(RD~~|60<br>~~(RD~~<br>~~(OU~~<br>~~ns~~|—<br>~~(RD~~<br>~~(OU~~<br>~~(Rs~~|—<br>~~(RD~~<br>~~(~~<br>~~(Rs~~|V<br>~~(RD~~<br>~~(~~<br>~~I~~|IC= 10mA<br>~~(RD~~|
|Emitter-Base Breakdown Voltage<br>~~(ry~~<br>~~pe~~|BVEBO<br>~~(ry~~|7<br>~~(OU~~<br>~~(ry~~<br>~~ns~~|—<br>~~(OU~~<br>~~(ry~~<br>~~(Rs~~|—<br>~~(~~<br>~~(ry~~<br>~~(Rs~~|V<br>~~(~~<br>~~(ry~~<br>~~I~~|IE= 100µA<br>~~(ry~~|
|Collector-Base Cutoff Current<br>~~pe~~<br>~~a~~|ICBO<br>~~_~~<br>~~(nD~~|—<br>~~ns~~<br>~~_~~|—<br>~~(Rs~~<br>~~_~~|100<br>~~(Rs~~<br>~~_~~|nA<br>~~I~~<br>~~_~~|VCB= 48V<br>~~_~~|
|||—<br>~~ns~~<br>~~_~~<br>~~I~~|—<br>~~(Rs~~<br>~~_~~<br>~~(I~~|50<br>~~(Rs~~<br>~~_~~<br>~~S(O~~|µA<br>~~I~~<br>~~_~~<br>~~S(O~~|VCB= 48V @TJ= +150°C<br>~~_~~|
|Emitter Cutoff Current<br>~~pe~~<br>~~a~~|IEBO<br>~~(nD~~|—<br>~~ns~~<br>~~I~~<br>~~(OUD~~|—<br>~~(Rs~~<br>~~(I~~<br>~~(OUD~~|100<br>~~(Rs ~~<br>~~S(O~~<br>~~(OUD~~|nA<br> ~~I~~<br>~~S(O~~<br>~~(RI~~|VEB= 7V|
|Collector-Emitter Cutoff Current<br>~~a~~<br>~~(UD~~|ICES<br>~~(nD ~~<br>~~(UD~~|—<br> ~~I ~~<br>~~(UD~~<br>~~(OUD~~|—<br> ~~(I~~<br>~~(UD~~<br>~~(OUD~~|100<br>~~S(O~~<br>~~(UD~~<br>~~(OUD~~|nA<br>~~S(O~~<br>~~(UD~~<br>~~(RI~~|VCES= 48V<br>~~(UD~~|
|**ON CHARACTERISTICS**(Note 9)<br>~~(OUD(RI~~<br>~~Cee~~|||||||
|DC Current Gain<br>~~I~~|hFE|200|400|—|—<br>~~Pp~~|IC= 500mA, VCE= 2V|
|||200<br>~~a~~|330<br>~~ee~~|—||IC= 1A, VCE= 2V<br>~~Pe~~|
|||100<br>~~a~~<br>~~ee~~|180<br>~~ee~~<br>~~ee~~|—||IC= 2A, VCE= 2V<br>~~Pe~~<br>~~Pp~~|
|||50<br>~~a~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|—||IC= 3A, VCE= 2V<br>~~Pe~~<br>~~Pp~~|
|Collector-Emitter Saturation Voltage<br>~~I~~<br>~~ee~~|VCE(sat)<br>|—<br>~~ee~~<br>|70<br>~~ee~~<br>|120<br>|mV<br>~~Pp~~<br>|IC= 1A, IB= 50mA<br>~~Pp~~<br>|
|||—<br>~~ee ~~<br>|180<br> ~~ee~~<br>|270<br>|mV<br>~~Pp~~<br>|IC= 3A, IB= 300mA<br>~~Pp~~<br>|
|Collector-Emitter Saturation Resistance<br>~~ee~~|RCE(sat)<br>|—<br>|60<br>|90<br><br>~~—~~|mΩ<br>||
|Base-Emitter Saturation Voltage<br>~~eeRr~~<br>~~ese~~|VBE(sat)<br>~~Rr~~<br>~~ese~~|—<br>~~Rr~~|0.86<br>~~Rr~~|1.0<br>~~Rr~~<br>~~—~~|V<br>~~Rr~~|IC= 1A, IB= 100mA<br>~~Rr~~|
|||—<br>~~Rr~~|1.0<br>~~Rr~~|1.2<br>~~Rr~~<br>~~—~~||IC= 2A, IB= 200mA<br>~~Rr~~|
|Base-Emitter Turn-On Voltage<br>~~Poesia~~<br>~~ese~~|VBE(on)<br>~~Poesia~~<br>~~ese~~|—<br>~~Poesia~~|0.65<br>~~Poesia~~|0.85<br>~~—~~<br>~~Poesia~~|V<br>~~Poesia~~|IC= 0.1A, VCE= 2V<br>~~Poesia~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~ese~~<br>~~I~~<br>~~S(O~~|||||||
|Current Gain-Bandwidth Product<br>~~nD~~|fT<br>~~nD~~<br>~~I~~|—<br>~~nD~~<br>~~(S(O~~|140<br>~~nD~~<br>~~S(O~~<br>~~(S(O~~|—<br>~~nD~~<br>~~S(O~~<br>~~(S(O~~|MHz<br>~~nD~~<br>~~S(O~~<br>~~(S(O~~|VCE= 10V, IC= 100mA, f = 10MHz<br>~~nD~~<br>~~S(O~~|
|Output Capacitance<br>~~GD~~|Cobo<br>~~I~~<br>~~GD~~|—<br>~~GD~~<br>~~(S(O~~|17<br>~~S(O~~<br>~~GD~~<br>~~(S(O~~|—<br>~~S(O~~<br>~~GD~~<br>~~(S(O~~|pF<br>~~S(O~~<br>~~GD~~<br>~~(S(O~~|VCB= 10V, f = 1MHz<br>~~S(O~~<br>~~GD~~|
|DelayTime<br>~~a~~<br>~~a~~<br>~~**e**ee~~|td<br>~~a~~<br>~~ee~~|—<br>~~(S(O~~<br>~~a~~<br>~~(~~<br>~~ee~~|15<br>~~(S(O~~<br>~~a~~<br>~~(~~<br>~~ee~~|—<br>~~(S(O~~<br>~~a~~<br>~~ee~~|ns<br>~~(S(O~~<br>~~a~~<br>~~ee~~|VCC= 12.5V, IC= 1A<br>IB1= -IB2= 0.05A<br>~~ee~~|
|Rise Time<br>~~a~~<br>~~**e**ee~~|tr<br>~~ee~~|—<br>~~(~~<br>~~ee~~|120<br>~~(~~<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-On Time<br>~~a~~<br>~~nD~~<br>~~**e**ee~~|t(on)<br>~~nD~~<br>~~ee~~|—<br>~~(~~<br>~~nD~~<br>~~ee~~|135<br>~~(~~<br>~~nD~~<br>~~ee~~|—<br>~~nD~~<br>~~ee~~|ns<br>~~nD~~<br>~~ee~~||
|Storage Time<br>~~**e**ee~~<br>~~a~~|ts<br>~~ee~~|—<br>~~ee~~<br>~~(~~|800<br>~~ee~~<br>~~(~~|—<br>~~ee~~|ns<br>~~ee~~||
|Fall Time<br>~~**e**ee~~<br>~~a~~|tf<br>~~ee~~<br>~~En~~|—<br>~~ee~~<br>~~(~~|300<br>~~ee~~<br>~~(~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Time<br>~~**e**ee~~<br>~~a~~<br>~~s~~|t(off)<br>~~ee~~<br>~~s~~<br>~~En~~|—<br>~~ee~~<br>~~(~~<br>~~s~~|1100<br>~~ee~~<br>~~(~~<br>~~s~~|—<br>~~ee~~<br>~~s~~|ns<br>~~ee~~<br>~~s~~||



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DXTN3C60PSQ Document number: DS40380  Rev.3 - 2 

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**DXTN3C60PSQ** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
400 6<br>VCE = 1V IB = 50mA<br>TIL | 5 ees<br>300 eS [—aaeel] 100 o C CooHm coh N Set IB = 30mA<br>4<br>IB = 20mA<br>200 Bn 25oC mn 3 Za<br>IB = 10mA<br>2<br>100 mail -55oC \ ' IB = 5mA<br>IH) 1 A<br>0 wi 00; 0<br>0.1 1 10 100 1000 10000 0 1 2 3 4 5<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Typical DC Current Gain vs Collector Current Typical DC Current vs Collector Current Typical Collector Current vs<br>Collector-Emitter Voltage<br>1.2 1.3<br>1.11.0 n VCE = 2V o ooo 1.21.1 Co I C /I B  = 20 nT<br>BOO RE Tia ECACC CCA<br>0.9 A A ZG 1.0 1A<br>0.8<br>0.7 BReri -55 o i C meee Y 0.9 A A -55oC L<br>0.8<br>0.60.5 25oC 0.7 25oC<br>0.4 imp|eRaRniiHeaes 100 pa o C  eeenieecalll=e 0.6 eaeSn ceame 150oC  era<br>0.3 ee | et 0.5 Th tl ail peal<br>0.2 A rt a 0.4 See2aaea<br>0.10.0 OTNCCM FTNPTT CCTCC 0.30.2 ariAACoH AAA A<br>0.1 1 10 100 1000 10000 0.1 1 10 A 100 1000 10000<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Typical Base-Emitter Turn-On Voltage Typical Base-Emitter Saturation Voltage<br>vs Collector Current vs Collector Current<br>1 1<br>I C /I B  = 20 25oC<br>| 2 ee eeeee<br>0.1 EE N/E Zl 0.1 SS OT TTT alll4<br>100oCoCC IC/IB = 50 IC/IB = 20<br>25 o C<br>es tL end po ire ance! a ti“<br>0.01<br>0.01 -55oCoCC IC/IB = 10<br>aSerSer metitieaea eminem|| ESS<br>1E-3<br>1E-3 rr CTT 0.1 PLATTE 1 CUT 10 TTT 100 TT) 1000 YT 10000<br>0.1 1 10 100 1000 10000<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Typical Collector-Emitter Saturation Voltage Typical Collector-Emitter Saturation Voltage<br>vc Collector Current<br>, COLLECTOR CURRENT (A)IC<br>SATURATION VOLTAGE (V)<br>VOLTAGE (V)<br>, BASE-EMITTER SATURATION<br>BE(sat)<br>V<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR-EMITTER<br>CE(sat) SATURATION VOLTAGE (V)<br>V<br> VOLTAGE (V)<br>, BASE-EMITTER TURN-ON<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


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1<br>I C /I B  = 20<br>| 2<br>0.1 EE N/E Zl<br>100oCoCC<br>25 o C<br>es tL end<br>0.01 -55oCoCC<br>aSerSer metitieaea eminem||<br>1E-3 rr CTT<br>0.1 1 10 100 1000 10000<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Typical Collector-Emitter Saturation Voltage<br>vs Collector Current<br>, COLLECTOR-EMITTER<br>CE(sat) SATURATION VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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**DXTN3C60PSQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (SWP) (Type Q)** 

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**----- Start of picture text -----**<br>
D<br>D1<br>8<br>E1 E<br>1.400<br>1.900 A1<br>c<br>Seating Plane<br>e<br>1<br>Ø 0.986 Depth 0.07± 0.030<br>DETAIL A<br>b(8x)<br>e/2<br>1<br>L<br>D2a k b2(2x)<br>A<br>E2 L4<br>E2a D2 M<br>L1<br>DETAIL A<br>La<br>8<br>L1a(8x) b4(8x)<br>0(4x)<br>01(4x)<br>**----- End of picture text -----**<br>


|**PowerDI5060-8 (SWP)**<br>**(Type Q)**|**PowerDI5060-8 (SWP)**<br>**(Type Q)**|**PowerDI5060-8 (SWP)**<br>**(Type Q)**|**PowerDI5060-8 (SWP)**<br>**(Type Q)**|
|---|---|---|---|
|**Dim**|**(yp**<br>**Min**|**Q)**<br>**Max**|**Typ**|
|**A**|0.90|1.10|1.00|
|**A1**|0|0.05|--|
|**b**|0.30|0.50|0.41|
|**b**<br>**b2 **|0.30<br>0.20|0.50<br>0.35|0.41<br>0.25|
|**b4**|0.25REF|||
|**c**|0.230|0.330|0.277|
|**D**|5.15BSC|||
|**D1**|4.70|5.10|4.90|
|**D2**|3.56|3.96|3.76|
|**D2a**|3.78|4.18|3.98|
|**E**<br>**E1**|6.40BSC<br>560<br>600<br>580|||
|**E1**|5.60|6.00|5.80|
|**E2**|3.46|3.86|3.66|
|**E2a**|4.1954.|4.5954.|4.395|
|**E2a**<br>**e**|4.1954.5954.395<br>1.27BSC|||
|**k**|1.05|--|--|
|**k**<br>**L**<br>**La**|1.05<br>0.635 <br>0.635|--<br>0.835 <br>0.835|--<br> 0.735<br> 0.735|
|**L1**|0.200|0.400|0.300|
|**L1a**|0.050REF|||
|**L4**|0.025|0.225|0.125|
|**M**|3.2054.|4.005|3.605|
|**θ**|10°|12°|11°|
|**θ1**|0<br>6°|8°|7°|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8 (SWP) (Type Q)** 

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**----- Start of picture text -----**<br>
X2<br>Y1 Dimensions  Value<br>(in mm)<br>C  1.270<br>G  0.660<br>Y2 G1  0.820<br>Y3 X  0.610<br>X1  4.100<br>X2  4.420<br>G1 X1 Y  1.270<br>Y1  1.020<br>Y2  3.810<br>Y3 6.610<br>Y C X (8x)<br>T= G<br>**----- End of picture text -----**<br>


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**DXTN3C60PSQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DXTN3C60PSQ Document number: DS40380  Rev.3 - 2 

October 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DXTN3C60PSQ-13/bipolar-bjt-single-transistor-npn-60-v-3-a-25-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dxtn3c60psq-13/trans-npn-60v-3a-175deg-c-2-5w/dp/3943179)
---

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