# Bipolar (BJT) Single Transistor, NPN, 60 V, 4 A, 1.8 W, WDFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3405136/)

**URL**: https://novapart.co/products/DXTN10060DFJBWQ-7/bipolar-bjt-single-transistor-npn-60-v-4-a-18-w
**SKU**: DXTN10060DFJBWQ-7
**Manufacturer**: DIODES INC.
**Price**: €0.1480
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 125MHz |
| Transistor Case Style | WDFN2020 |
| Dc Current Gain Hfe Min | 20hFE |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405136/)

## **DXTN10060DFJBWQ** [J **60V NPN LOW SATURATION TRANSISTOR** 

## **Description** 

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The W-DFN2020-3/SWP (Type A) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance. 

## **Features** 

- BVCEO > 60V 

## **Mechanical Data** 

   - Case: W-DFN2020-3 

   - Nominal Package Height: 0.6mm 

   - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.01 grams (Approximate) 

- IC = 4A Continuous Collector Current 

- Low Saturation Voltage (100mV Max @1A) 

- RSAT = 60mΩ for a Low Equivalent On-Resistance 

- hFE Specified up to 6A for High Current Gain Hold Up 

- Tighter Gain Specification 

- Low Profile 0.62mm High Package for Thin Applications 

- Sidewall Tin Plating for Wettable Flanks in AOI 

- RJA Efficient, 60% Lower than SOT23 

## **Applications** 

   - Automotive Systems 

      - MOSFET Gate Driving 

      - DC-DC Converters 

      - Motor Control 

      - Power Switches 

- 4mm[2] Footprint, 50% Smaller Than SOT23 

- Rated +175°C – Ideal for High Temperature Environment 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DXTN10060DFJBWQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.** 

## W-DFN2020-3/SWP (Type A) 

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## **Ordering Information** (Note 4) 

|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|---|
|DXTN10060DFJBWQ-7|Automotive|2L7|7|8|3,000|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

## W-DFN2020-3/SWP (Type A) 

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**----- Start of picture text -----**<br>
2L7<br>YWX<br>**----- End of picture text -----**<br>


2L7 = Product Type Marking Code Y = Year: 0~9 

W = Week: A~Z: 1~26 Week; a~z;  27~52 Week; z Represents 52 and 53 Week X = A~Z: Internal Code 

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## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage||VCBO|100|V|
|Collector-Emitter Voltage||VCEO|60||
|Emitter-Base Voltage||VEBO|8||
|Peak Pulse Current||ICM|6|A|
|Continuous Collector Current|(Note 5)|IC|4||
||(Note 6)||4.3||
|Base Current||IB|1||



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|1.8<br>12|W<br>mW/°C|
||(Note 6)||2.94<br>19.6||
|Thermal Resistance, Junction to Ambient|(Note 5)|RJA|83|°C/W|
||(Note 6)||51||
|Thermal Resistance,Junction to Lead|(Note 7)|RJL|16.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the exposed collector pad on 31mm x 31mm (10cm[2] ) 1oz copper that is on a single sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heatsink. 

6. Same as Note 5, except the device is measured at t ≤ 5 sec. 

7. Thermal resistance from junction to solder-point (on the exposed collector pad). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
2.0<br>V<br>10 CE(sat) 1.8 10 sqcm<br>Limit Single 1oz Cu<br>1.6<br>SES NRA 1.4 es<br>SN AD N<br>1 DC 1.2<br>INR NEE<br>poa 1s100ms EEA ROASTHZ ONZE 1.00.8 ss\<br>100m Pa 10ms UNA 0.6 PN<br>10 sqcm  1ms 0.4<br>Single 1oz Cu<br>T amb =25°C 100µs 0.2<br>10m PEtSn TTTSnail 0.0 PNa eee eee<br>100m 1 10 0 25 50 75 100 125 150 175 200<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Derating Curve<br>Safe Operating Area<br>90<br>80 T amb =25°C TooToo “Sail OU 07/7 AGO 0 Tamb=25°C<br>70 a 10 sqcm Single 1oz Cu 1 Za 100 LN EU EL 10 sqcm Single 1oz Cu |<br>60 esTo ealeene sree:ie” Ale HANHSeu)0S Stir see an tt et<br>50 D=0.5<br>A ee eget CTE TINCT TTT TTT ETI TTT<br>40 eee eseratNN AD?ZZ 10 \\<br>Single Pulse<br>30<br>D=0.2<br>20 TED Man D=0.05 ml Seti acest petit me ORAL REET A<br>iba HHH Cn rT CoE CTS SS ECT<br>10 Ci ears D=0.1 i PTI CT TATE TIT<br>erm CCC Co<br>0 ESere Perrott 1 PA TVIM CAIN CAI EIN IME AI CTT<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>I<br> Max Power Dissipation (W)<br> Thermal Resistance (°C/W) Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

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225<br>200 CooRe Single Pulse rTTT<br>T =25°C<br>PE amb rT<br>175<br>PART Ht<br>NS rT<br>150 NS<br>125<br>AASPNR<br>100 PSSPC SS 1oz Copper 11<br>75 SSS<br>os<br>50 TT<br>25 HSS0 2oz Copper<br>PE rt oo<br>0 PE Eth |<br>0.1 1 10 100<br>Board Cu Area (sqcm)<br>Thermal Resistance vs. Board Area<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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4<br>Tamb=25°C 2oz Copper<br>T =175°C eeat<br>jmax<br>Pai<br>3 atl<br>77<br>et<br>2 el A |<br>oe A7) (I Lee 1oz Copper HH<br>1 aa6 Asie<br>eC<br>Cel<br>0 PL TUTLETTE<br>0.1 1 10 100<br>Board Cu Area (sqcm)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Power Dissipation vs. Board Area** 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~————~~<br>~~———~~|**Symbol**<br>~~————~~<br>|**Min**<br>~~————~~<br>~~a~~<br>|**Typ**<br>~~————~~<br>~~a~~<br>|**Max**<br>~~————~~<br>~~a~~<br>|**Unit**<br>~~————~~<br>~~a~~<br>|**Test Condition**<br>~~————~~<br>|
|Collector-Base Breakdown Voltage<br>~~————~~<br>~~———~~|BVCBO<br>~~————~~<br>|150<br>~~————~~<br>~~a~~<br>|187<br>~~————~~<br>~~a~~<br>|-<br>~~————~~<br>~~a~~<br>|V<br>~~————~~<br>~~a~~<br>|IC= 100µA<br>~~————~~<br>|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~————~~<br>~~———a~~|BVCEO<br>~~————~~<br>~~a~~|60<br>~~————~~<br>~~a~~<br>~~a~~|66<br>~~————~~<br>~~a~~<br>~~a~~|-<br>~~————~~<br>~~a~~<br>~~a~~|V<br>~~————~~<br>~~a~~<br>~~a~~|IC= 10mA<br>~~————~~<br>~~a~~|
|Emitter-Base Breakdown Voltage<br>~~———a~~|BVEBO<br>~~a~~<br>~~a~~|8<br>~~a~~<br>~~a~~<br>~~a~~|9<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~<br>~~a~~|IE= 100µA<br>~~a~~<br>~~a~~|
|Collector Cutoff Current<br>~~———a~~|ICBO<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|2<br>~~a~~<br>~~a~~<br>~~a~~|100<br>~~a~~<br>~~a~~<br>~~a~~|nA<br>~~a~~<br>~~a~~<br>~~a~~|VCB= 120V<br>~~a~~<br>~~a~~|
|Emitter Cutoff Current<br>~~———a~~|IEBO<br>~~a~~|-<br>~~a~~<br>~~a~~|2<br>~~a~~<br>~~a~~|100<br>~~a~~<br>~~a~~|nA<br>~~a~~<br>~~a~~|VEB= 7V<br>~~a~~|
|Collector Emitter Cutoff Current|ICES|-|2|100|nA|VCES= 48V|
|Static Forward Current Transfer Ratio (Note 9)|hFE|250<br>340<br>250<br>140<br>20|444<br>425<br>363<br>205<br>40|550<br>500<br>--<br>--<br>--|-|IC= 10mA, VCE= 2V<br>IC= 200mA, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 2A, VCE= 2V<br>IC= 6A,VCE= 2V|
|Collector-Emitter Saturation Voltage (Note 9)|VCE(SAT)|--<br>--<br>--<br>--<br>--<br>--|12<br>70<br>125<br>150<br>200<br>240|20<br>100<br>160<br>200<br>300<br>320|mV|IC= 0.1A, IB= 10mA<br>IC= 1A, IB= 50mA<br>IC= 1A, IB= 10mA<br>IC= 2A, IB= 50mA<br>IC= 3A, IB= 100mA<br>IC= 4A,IB= 200mA|
|Base-Emitter Turn-On Voltage(Note 9)|VBE(ON)<br>~~a~~|--<br>~~a~~|0.94<br>~~a~~|1.00|V|IC= 4A,VCE= 2V|
|Base-Emitter Saturation Voltage(Note 9)<br>~~a~~|VBE(SAT)<br>~~a~~<br>~~a~~|--<br>~~a~~<br>~~a~~|1.00<br>~~a~~<br>~~a~~|1.07<br>~~a~~|V<br>~~a~~|IC= 4A,IB= 200mA<br>~~a~~|
|Output Capacitance<br>~~a~~|Cobo<br>~~a~~<br>~~a~~|--<br>~~a~~<br>~~a~~|14<br>~~a~~<br>~~a~~|--<br>~~a~~|pF<br>~~a~~|VCB= 10V. f = 1MHz<br>~~a~~|
|Transition Frequency<br>~~OO~~<br>~~ss~~|fT<br>~~a ~~<br>~~OO~~<br>~~ss a~~|125<br> ~~a ~~<br>~~OO~~<br>~~a~~|--<br> ~~a~~<br>~~OO~~<br>~~er~~|--<br>~~OO~~<br>~~ee~~|MHz<br>~~OO~~<br>~~er~~|VCE= 10V, IC= 50mA,<br>f = 100MHz<br>~~OO~~|
|Turn-On Time<br>~~———~~<br>~~ss~~|tON<br>~~———~~<br>~~ss a~~|--<br>~~———~~<br>~~a~~|200<br>~~———~~<br>~~er~~|--<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~er~~|VCC= 10V, IC= 1A<br>IB1= -IB2= 10mA<br>~~———~~|
|Turn-Off Time<br>~~———~~<br>~~ss~~|tOFF<br>~~———~~<br>~~ss a~~|--<br>~~———~~<br>~~a~~|700<br>~~———~~<br>~~er~~|--<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~er~~||



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## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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10 0.3<br>Tamb=25°C IC/IB=10 175°C<br>Ui TT TTT Nl<br>1 IC/IB=100 150°C<br>0.2<br>eee =  Ca 125°C<br>I C /I B =50<br>He — tert aS il<br>0.1 85°C<br>TTI TT agee ZA Il Ih i]<br>| 0.1 25 ° C SSK y tj<br>0.01<br>PTT PT TT IC/IB=10 11  a ll -55°C<br>0.001 0.0<br>0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000<br>IC   Collector Current (mA) IC   Collector Current (mA)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>800 1.2<br>700 or 175°C 150 ° C VCE=2V : I C /I B =10 TnConon<br>1.0<br>125°C<br>600 Sle EE a HE at<br>St 0.8 -55 ° C AEE alll<br>500 85°C<br>Se ae er EE<br>EO Pe ee 25°C EB<br>400 25°C 0.6<br>pe eee<br>300 Gl oS’ 85°C maa 175°C<br>0.4<br>200 po |in, Caen LL eeerr 150° lll C<br>-55°C<br>100 TSS)HH ~ 0.2 Eeep 125°C<br>ee SETAC. CCIM<br>0 Pr eee ee. “<8 0.0 |PTE PTT PT TTT TT<br>10 100 1000 0.1 1 10 100 1000 10000<br>IC   Collector Current (mA) IC   Collector Current (mA)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.2<br>V =2V<br>CE<br>1.0 cen CTCATT<br>aNAA<br>0.8 -55°C<br>eeell<br>a<br>0.6 25°C<br>me = OAM<br>op / All<br>85 eT °C<br>0.4<br>Pt ee | I<br>oT een 175°C It<br>0.2 er 150°C a th<br>soca 125°C ial nll<br>ceeRime otPAnih CATT<br>0.0<br>0.1 1 10 100 1000 10000<br>IC   Collector Current (mA)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>  (V)<br>Gain<br>BE(SAT)<br>V<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **W-DFN2020-3/SWP (Type A)** 

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**----- Start of picture text -----**<br>
A3<br>A W-DFN2020-3 /SWP<br>Seating Plane (Type A)<br>A1 oe Dim  Min  Max  Typ<br>A  0.57  0.67  0.62<br>D A1  0.00 0.05 0.03<br>z A3 –– –– 0.152<br>e L b  0.22  0.32  0.27<br>D  1.95  2.05  2.00<br>D2  1.24  1.44  1.34<br>D2 D4  0.56 0.76 0.66<br>E  1.95 2.05 2.00<br>K<br>E2  0.81  1.01  0.91<br>E<br>E2 e  ––  ––  1.30<br>k  ––  ––  0.365<br>L  0.28  0.38  0.33<br>L1  0.375 0.475 0.425<br>z  ––  ––  0.215<br>L1 All Dimensions in mm<br>b(3x)<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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W-DFN2020-3/SWP (Type A)<br>X1<br>Y2<br>Value<br>Dimensions<br>(in mm)<br>C  1.300<br>G  0.265<br>Y1<br>Y3 X  0.370<br>X1  1.440<br>Y  0.515<br>G Y1  1.010<br>Y2  0.510<br>ES<br>Y3 2.300<br>Y<br>C<br>ap X 7<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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## Links

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