# Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 1 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3943172/)

**URL**: https://novapart.co/products/DXT751-13/bipolar-bjt-single-transistor-pnp-60-v-3-a-1-w-sot
**SKU**: DXT751-13
**Manufacturer**: DIODES INC.
**Price**: €0.1790
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | DXT Series |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 145MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943172/)

**DXT751** 

**LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR** 

Please click here to visit our online s Please click here to visit our online spice pice models database. models database. 

## **Features** 

- Epitaxial Planar Die Construction 

- Complementary NPN Type Available (DXT651) 

- Ideally Suited for Automated Assembly Processes 

- Ideal for Medium Power Switching or Amplification Applications 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **"Green" Device (Note 2)** 

## **Mechanical Data** 

- Case: SOT89-3L 

- Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020C 

- Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

- Marking Information: See Page 4 

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SOT89-3L<br>2,4<br>1<br>3<br>Schematic and Pin Configuration<br>EMITTER<br>COLLECTOR<br>3 E<br>C 4 2 C<br>BASE<br>1 B<br>TOP VIEW<br>**----- End of picture text -----**<br>


- Ordering Information: See Page 4 

- Weight: 0.072 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-80|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-5|V|
|Continuous Collector Current|IC|-3|A|
|Peak Pulse Collector Current|ICM|-6|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 3) @TA= 25°C|PD|1|W|
|Thermal Resistance,Junction to Ambient Air(Note 3) @TA= 25°C|RθJA|125|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 1.  No purposefully added lead. 

   2.  Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

3.  Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

DS31185 Rev. 3 - 2 

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DXT751 © Diodes Incorporated 

## Drow. 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~QO~~<br>~~LC~~|**Symbol**<br>~~QO~~<br>|**Min**<br>~~QO~~<br>|**Typ**<br>~~QO~~<br>~~(GO~~<br>|**Max**<br>~~QO~~<br>~~(GO~~<br>|**Unit**<br>~~QO~~<br>~~(GO~~<br>|**Test Conditions**<br>~~QO~~<br>|
|**OFFCHARACTERISTICS (Note 4)**<br>~~(GO~~<br>~~LC~~<br>~~QOOO~~|||||||
|Collector-Base Breakdown Voltage<br>~~LCGO~~|V(BR)CBO<br>~~GO~~|-80<br>~~GO~~<br>~~QO~~<br>~~QO~~|⎯<br>~~(GO~~<br>~~GO~~<br>~~QO~~<br>~~QO~~|⎯<br>~~(GO~~<br>~~GO~~<br>~~QO~~<br>~~OO~~|V<br>~~(GO~~<br>~~GO~~<br>~~OO~~<br>~~OO~~|IC= -100μA,IE= 0<br>~~GO~~<br>~~OO~~<br>~~OO~~|
|Collector-Emitter Breakdown Voltage<br>~~QO~~|V(BR)CEO<br>~~QO~~|-60<br>~~QO~~<br>~~QO~~<br>~~QO~~|⎯<br>~~QO~~<br>~~QO~~<br>~~QO~~|⎯<br>~~QO ~~<br>~~QO~~<br>~~OO~~|V<br> ~~OO~~<br>~~QO~~<br>~~OO~~|IC= -10mA,IB= 0<br>~~OO~~<br>~~QO~~<br>~~OO~~|
|Emitter-Base Breakdown Voltage|V(BR)EBO<br>~~ee~~|-5<br>~~QO~~<br>~~ee~~|⎯<br>~~QO ~~<br>~~ee~~|⎯<br> ~~OO~~<br>~~ee~~|V<br>~~OO~~<br>~~ee~~|IE= -100μA,IC= 0<br>~~OO~~|
|Collector Cutoff Current<br>~~ae~~|ICBO<br>~~ae~~<br>~~ee~~|⎯<br>~~ae~~<br>~~ee~~|⎯<br>~~ae~~<br>~~ee~~|-0.1<br>-10<br>~~ae~~<br>~~ee~~|μA<br>μA<br>~~ae~~<br>~~ee~~|VCB= -60V, IE= 0<br>VCB= -60V,IE= 0,TA= 100°C<br>~~ae~~|
|Emitter Cutoff Current<br>~~GO~~|IEBO<br>~~ee~~<br>~~GO~~|⎯<br>~~ee~~<br>~~GO~~|⎯<br>~~ee ~~<br>~~GO~~|-0.1<br> ~~ee ~~<br>~~GO~~|μA<br> ~~ee~~<br>~~GO~~|VEB= -4V,IC= 0<br>~~GO~~|
|**ON CHARACTERISTICS (Note 4)**|||||||
|Collector-Emitter Saturation Voltage<br>~~QO~~|VCE(SAT)<br>~~QO~~|⎯<br>⎯<br>~~QO~~|-0.08<br>-0.2<br>~~QO~~|-0.3<br>-0.6<br>~~GOO~~|V<br>~~GOO~~|IC= -1A, IB= -100mA<br>IC= -3A,IB= -300mA<br>~~GOO~~|
|Base-Emitter Saturation Voltage<br>~~QO~~|VBE(SAT)<br>~~QO~~|⎯<br>~~QO~~|-0.9<br>~~QO~~|-1.25<br>~~GOO~~|V<br>~~GOO~~|IC= -1A,IB= -100mA<br>~~GOO~~|
|Base-Emitter Turn-On Voltage<br>~~QO~~|VBE(ON)<br>~~QO~~|⎯<br>~~QO~~|-0.8<br>~~QO~~|-1<br>~~GOO~~|V<br>~~GOO~~|VCE= -2V,IC= -1A<br>~~GOO~~|
|DC Current Gain|hFE|70<br>100<br>80<br>40|200<br>180<br>160<br>140|⎯<br>300<br>⎯<br>⎯|⎯|VCE= -2V, IC= -50mA<br>VCE= -2V, IC= -500mA<br>VCE= -2V, IC= -1A<br>VCE= -2V,IC= -2A|
|**AC CHARACTERISTICS**<br>~~S(OOO~~|||||||
|Transition Frequency<br>~~QO~~|fT<br>~~QO~~|100<br>~~QO~~<br>~~S(O~~|145<br>~~QO~~<br>~~S(O~~|⎯<br>~~QO~~<br>~~OO~~|MHz<br>~~QO~~<br>~~OO~~|VCE= -10V,IC= -50mA,f = 100MHz<br>~~QO~~<br>~~OO~~|
|Output Capacitance|Cobo|⎯<br>~~S(O~~<br>~~ee~~|⎯<br>~~S(O ~~<br>~~ee~~|30<br> ~~OO~~<br>~~ee~~|pF<br>~~OO~~|VCB= -10V,f = 1MHz<br>~~OO~~|
|Switching Times<br>~~ee~~|ton<br>toff<br>~~ee~~|⎯<br>⎯<br>~~ee~~<br>~~ee~~|45<br>200<br>~~ee~~<br>~~ee~~|⎯<br>⎯<br>~~ee~~<br>~~ee~~|ns<br>ns<br>~~ee~~|IC= -500mA, VCC= -10V<br>IB1= IB2= -50mA<br>~~ee~~|



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1.0 NTT) Ce e<br>0.8<br>e| {|_ _|<br>bE 1 . 2 if | i =  8 m<br>e f |<br>0.6 = lp = - 6mA<br>J caeenen c d<br>0.4 x p o<br>G | (eee Ip = - 4mA<br>on) ce<br>0.2<br>0 0 . 0<br>ee 0 25 50 | 75 TL 100 125 A 150 | 0 PELE 1 a TT 2 3 | e yy 4 5<br>TA, AMBIENT TEMPERATURE (°C) -VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1  Power Dissipation  Fig. 2  Typical Collector Current<br>vs. Ambient Temperature (Note 3) vs. Collector-Emitter Voltage<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


DS31185 Rev. 3 - 2 

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DXT751 © Diodes Incorporated 

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400 0.3<br>350<br>0.25<br>SH H a t CATAHILT<br>300<br>H ee Tins e e TN al<br>0.2<br>s= 250 ui= are AH Ir<br>eC  = NN ow < |<br>200 0.15<br>te raae rh 83 VALE<br>L EN B  5 i<br>| 150 7 oO<br>a RE ee = THN<br>0.1<br>| \\ le vn<br>£ 100 oOICoN\ aw8S ayi yy<br>0.05<br>50 Te e nea =e yy,<br>0 a NE ARENAI 0 e—— i Gri s fill<br>0 . 001 0 . 01 0 . 1 1 10 0 . 0001 0 . 001 0 . 01 0.1 1<br>-IC, COLLECTOR CURRENT (A) -IC [,]  COLLECTOR CURRENT (A)<br>Fig. 3  Typical DC Current Gain  Fig. 4 Typical Collector-Emitter Saturation<br>vs. Collector Current Voltage vs. Collector Current<br>**----- End of picture text -----**<br>


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1<br>0 . -I 001 C [,]  COLLECTOR CURRENT (A) 0 . 01 0 4<br>Fig. 5 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current<br>**----- End of picture text -----**<br>


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400 TN T<br>350<br>300 HT T He<br>Zz|g8 250200 TAMECUTAN\ Na TTT\ l<br>oO<br>Mn x 150<br>STM 100 TTA<br>50 COT=O TT<br> tT ‘obo<br>0 CT I ol<br>0.01 0.1 1 10<br>VR [,]  REVERSE VOLTAGE (V)<br>Fig. 7 Typical Capacitance Characteristics<br>**----- End of picture text -----**<br>


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é 0 . 007 0 . 01 0.1 1 10<br>-IC [,]  COLLECTOR CURRENT (A)<br>Fig. 6 Typical Base-Emitter Saturation<br>Voltage vs. Collector Current<br>200150 TTLLLIILLLLEEE<br>2a...JST<br>100 TELE(LZEEEELL—|<br>50 EEE VCE = -10V<br>EEE f = 100MHz<br>0 -CEEEE ELLE<br>0 10 20 30 40 50 60 70 80 90 100<br>-IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current<br>, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


DS31185 Rev. 3 - 2 

3 of 4 **www.diodes.com** 

DXT751 © Diodes Incorporated 

| 

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Ordering Information (Note 5)<br>Device Packaging Shipping<br>DXT751-13 SOT89-3L  2500/Tape & Reel<br>Notes:  5.  For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.<br>Marking Information<br>(Top View)<br>KP2 = Product Type Marking Code<br>YWW<br>YWW = Date Code Marking<br>KP2 Y = Last digit of year ex: 7 = 2007<br>WW = Week code 01 - 52<br>Package Outline Dimensions<br>D1<br>C SOT89-3L<br>oe Eee Dim  Min  Max  Typ<br>A 1.40  1.60  1.50<br>B 0.45  0.55  0.50<br>E<br>H B1 0.37  0.47  0.42<br>C 0.35  0.43  0.38<br>B L D 4.40  4.60  4.50<br>‘ P| B1 L aill e U) o. | GEEETETER D1  1.50  R= 1.70  1.60<br>E 2.40  2.60  2.50<br>:<br>e —  —  1.50<br>| A<br>A H 3.95  4.25  4.10<br>L 0.90  1.20  1.05<br>SS<br>t~SCSY All Dimensions in mm<br>D<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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1.7<br>2.7<br>0.4<br>1.9<br>1.3<br>0.9<br>3.0<br>Unit: mm<br>**----- End of picture text -----**<br>


## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

## LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

DS31185 Rev. 3 - 2 

4 of 4 **www.diodes.com** 

DXT751 © Diodes Incorporated 



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