# Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 1 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3943169/)

**URL**: https://novapart.co/products/DXT651-13/bipolar-bjt-single-transistor-npn-60-v-3-a-1-w-sot
**SKU**: DXT651-13
**Manufacturer**: DIODES INC.
**Price**: €0.1370
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | DXT Series |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943169/)

**DXT651** 

**60V NPN LOW VCE(sat) TRANSISTOR IN SOT89** 

## **Features** 

- BVCEO > 60V 

- IC = 3A  high Continuous  Current 

- Low saturation voltage VCE(sat) < 300mV @ 1A 

- Complementary PNP Type: DXT751 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT89 

- Case material: Molded Plastic. “Green” Molding Compound. 

- UL Flammability Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.052 grams (Approximate) 

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C<br>SOT89  E<br>B C C<br>B<br>E<br>Top View<br>Top View  Device Symbol<br>Pinout<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|DXT651-13|KN2|13|12|2,500|
|DXT651-13R|KN2|13|12|4,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

   3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
YWW<br>KN2<br>**----- End of picture text -----**<br>


KN2 = Product Type Marking Code = Manufacturer’s Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53) 

1 of 6 **www.diodes.com** 

DXT651 Document Number: DS31184 Rev: 5 - 2 

February 2013 © Diodes Incorporated 

**DXT651** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|80|V|
|Collector-Emitter Voltage|VCEO|60|V|
|Emitter-Base Voltage|VEBO|5|V|
|Collector Current|IC|3|A|
|Peak Pulse Collector Current|ICM|6|A|
|Base Current|IB|500|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|1|W|
|Thermal Resistance,Junction to Ambient Air(Note 5)|RθJA|125|°C/W|
|Thermal Resistance,Junction to Leads(Note 6)|RθJL|18.2|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Thermal resistance from junction to solder-point (on the exposed collector pad). 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
120  25mm x 25mm 1oz Cu  25mm x 25mm 1oz Cu<br>T amb  = 25°C ee | 100 \ T amb  = 25°C<br>10080 EH A | Sect Segtieeetiiiemed Single pulse i<br>D=0.5<br>60 ——aearne [rt] Af [A]<br>10<br>oer92 [=f] AN EPPPesce PSCHTNese ce ceed<br>40 D=0.2 Single Pulse<br>Et ee EE CC<br>ne A il en CentCnC<br>20 D=0.05<br>aaeee| at D=0.1 1 RICCI<br>0<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>1.0  25mm x 25mm 1oz Cu<br>neNee<br>0.8 Ne<br>Pot PN<br>0.6 Nee eee<br>ee ee Ne<br>0.4 Pr Nee<br>ee<br>0.2 eeee<br>re Nee<br>0.0 PF ot tT [RT]<br>0 20 40 60 80 100 120 140 160<br> Temperature (°C)<br>Derating Curve<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


2 of 6 **www.diodes.com** 

DXT651 Document Number: DS31184 Rev: 5 - 2 

February 2013 © Diodes Incorporated 

**DXT651** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~————~~|**Symbol**<br>~~————~~|**Min**<br>~~————~~|**Typ**<br>~~————~~|**Max**<br>~~————~~|**Unit**<br>~~————~~|**Test Conditions**<br>~~————~~|
|**OFFCHARACTERISTICS (Note 7)**<br>~~————~~<br>~~nD RD~~<br>~~I (S(OQO~~|||||||
|Collector-Base Breakdown Voltage<br>~~a)~~|BVCBO<br>~~a)~~<br>~~nD RD~~|80<br>~~a)~~<br>~~RD~~<br>~~I~~|<br>~~a)~~<br>~~I (S(O~~<br>~~I~~|<br>~~a)~~<br>~~(S(O~~<br>~~(OR~~|V<br>~~a)~~<br>~~(S(O~~<br>~~(OR~~|IC= 100A,IE= 0<br>~~a)~~<br>~~QO~~<br>~~(~~|
|Collector-Emitter Breakdown Voltage<br>~~DD~~|BVCEO<br>~~nD RD~~<br>~~DD~~<br>~~I~~|60<br>~~RD~~<br>~~DD~~<br>~~I~~<br>~~I~~|<br>~~I (S(O~~<br>~~DD~~<br>~~I~~<br>~~I~~|<br>~~(S(O~~<br>~~DD~~<br>~~(OR~~<br>~~(OO~~|V<br>~~(S(O ~~<br>~~DD~~<br>~~(OR~~<br>~~(OO~~|IC= 10mA,IB= 0<br> ~~QO~~<br>~~DD~~<br>~~(~~<br>~~(OO~~|
|Emitter-Base Breakdown Voltage<br>~~nD~~|BVEBO<br>~~nD~~<br>~~I~~<br>~~es ee~~|5<br>~~I~~<br>~~nD~~<br>~~I~~<br>~~ee~~|<br>~~I~~<br>~~nD~~<br>~~I~~<br>~~s~~|<br>~~(OR~~<br>~~nD~~<br>~~(OO~~|V<br>~~(OR ~~<br>~~nD~~<br>~~(OO~~|IE= 100A,IC= 0<br> ~~(~~<br>~~nD~~<br>~~(OO~~|
|Collector-Base Cutoff Current<br>~~e~~|ICBO<br>~~I~~<br>~~e~~<br>~~es ee~~|<br>~~I~~<br>~~e~~<br>~~ee~~|<br>~~I ~~<br>~~e~~~~**e**~~<br>~~s~~|0.1<br>10<br> ~~(OO~~<br>~~**e**~~|µA<br>~~(OO~~<br>~~**e**~~|VCB= 60V, IE= 0<br>VCB= 60V,IE= 0,TA= +100°C<br>~~(OO~~<br>~~**e**~~|
|Emitter-Base Cutoff Current<br>~~—_—_——~~|IEBO<br>~~es ee~~<br>~~—_—_——~~|<br>~~ee~~<br>~~—_—_——~~|<br>~~s~~<br>~~—_—_——~~|0.1<br>~~—_—_——~~|µA<br>~~—_—_——~~|VEB= 4V,IC= 0<br>~~—_—_——~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~—_—_——~~<br>~~eeeeee~~<br>~~ee~~<br>~~ee~~|||||||
|Collector-Emitter Saturation Voltage<br>~~es~~|VCE(sat)<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~<br>~~I~~|0.08<br>0.23<br>~~es~~<br>~~ee~~<br>~~I~~|0.3<br>0.6<br>~~es~~<br>~~ee~~<br>~~(QO~~|V<br>V<br>~~es~~<br>~~ee~~<br>~~(QO~~|IC= 1A, IB= 100mA<br>IC= 3A,IB= 300mA<br>~~es~~<br>~~(QO~~|
|Base-Emitter Saturation Voltage<br>~~DN~~|VBE(sat)<br>~~ee ~~<br>~~DN~~|<br> ~~ee ~~<br>~~DN~~<br>~~I~~|0.85<br> ~~ee~~<br>~~DN~~<br>~~I~~|1.25<br>~~ee~~<br>~~DN~~<br>~~(QO~~|V<br>~~ee~~<br>~~DN~~<br>~~(QO~~|IC= 1A,IB= 100mA<br>~~DN~~<br>~~(QO~~|
|Base-Emitter Turn-On Voltage<br>~~ee~~|VBE(on)<br>~~ee~~|<br>~~I ~~<br>~~ee~~|0.8<br> ~~I ~~<br>~~ee~~|1<br> ~~(QO~~<br>~~ee~~|V<br>~~(QO~~<br>~~ee~~|VCE= 2V,IC= 1A<br>~~(QO~~<br>~~ee~~|
|DC Current Gain<br>~~ee~~|hFE<br>~~ee~~|70<br>100<br>80<br>40<br>~~ee~~|200<br>200<br>185<br>120<br>~~ee~~|<br>300<br><br><br>~~ee~~|<br>~~ee~~|VCE= 2V, IC= 50mA<br>VCE= 2V, IC= 500mA<br>VCE= 2V, IC= 1A<br>VCE= 2V,IC= 2A<br>~~ee~~<br>~~TF”~~|
|**AC CHARACTERISTICS**<br>~~rr~~<br>~~TF”~~|||||||
|Transition Frequency<br>~~rr~~|fT<br>~~rr~~<br>~~nD~~|140<br>~~rr~~<br>~~I~~|200<br>~~rr~~<br>~~I~~|<br>~~rr~~<br>~~(OU~~|MHz<br>~~rr~~<br>~~(OU~~|VCE= 5V,IC= 100mA,f = 100MHz<br>~~rr~~<br>~~TF”~~<br>~~(~~|
|Output Capacitance<br>~~es~~|Cobo<br>~~es~~<br>~~nD~~<br>~~ee~~|<br>~~es~~<br>~~I~~<br>~~ee~~|<br>~~es~~<br>~~I~~<br>~~ee~~|30<br>~~es~~<br>~~(OU~~<br>~~ee~~|pF<br>~~es~~<br>~~(OU~~<br>~~ee~~|VCB= 10V,f = 1MHz<br>~~TF”~~<br>~~es~~<br>~~(~~|
|Switching Times<br>~~ee~~|ton<br>toff<br>~~nD ~~<br>~~ee~~<br>~~ee~~|<br><br> ~~I~~<br>~~ee~~<br>~~ee~~|35<br>230<br>~~I~~<br>~~ee~~<br>~~ee~~|<br><br>~~(OU~~<br>~~ee~~<br>~~ee~~|ns<br>ns<br>~~(OU ~~<br>~~ee~~<br>~~ee~~|VCC= 10V. IC= 500mA,<br>IB1= IB2= 50mA<br> ~~(~~<br>~~ee~~|



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2.0 350<br>1.8 VCE = 2V<br>CCC IB = 10mA 300 O0 T A  = 150°C 0<br>1.6<br>1.4 HH ee IB = 8mA 250 COTE T A  = 85°C<br>rer ull TNT<br>1.2<br>200<br>IB = 6mA TA = 25°C<br>1.0 way coon afin<br>150<br>0.8<br>f- IB = 4mA B10 A A A<br>0.6 100 TA = -55°C<br>Perse SE<br>0.4<br>IB = 2mA 50<br>0.2 JSSeSeeeee CHTTT<br>0.00 POCECCCeeth 1 2 3 4 5 0.0010 UUM 0.01 FINE 0.1 LUNE 1 NI LU 10<br>VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)<br>Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage Fig. 3 Typical DC Current Gain<br>vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DXT651 Document Number: DS31184 Rev: 5 - 2 

February 2013 © Diodes Incorporated 

**DXT651** 

**==> picture [472 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.35 1.2<br>VCE = 2V<br>0.3 I C /I B  = 10 1.0<br>0.25 Sate St A AT<br>ET 0.8 Be<br>0.2 CTT TA = -55 ° C WA<br>0.6<br>0.15 a TL eel TA = 25°C<br>0.1 TA = 150°C 0.4 gg TA = 85°C ala<br>TA = 85°C<br>0.05 TA = 25°C 0.2 TA = 150°C<br>TA = -55°C<br>0 et ll 0.0 au A aa a<br>0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig. 4 Typical Collector-Emitter Saturation Voltage  Fig. 5 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 60<br>IC/IB = 10<br>1.0 50 f = 1MHz<br>0.8<br>mree cnn g |  ee 40 |<br>TA = -55°C<br>0.6<br>30<br>TA = 25°C<br>0.4 at TT Tl<br>TA = 85°C 20<br>0.2 TA = 150°C<br>10<br>0 iat SACO<br>0.0001 0.001 0.01 0.1 1 10<br>AT 0 PCE<br>IC, COLLECTOR CURRENT (A) 0 5 10 15 20 25 30 35 40<br>Fig. 6 Typical Base-Emitter Saturation Voltage  VR, REVERSE VOLTAGE (V)<br>vs. Collector Current Fig. 7 Typical Output Capacitance Characteristics<br>250<br>200<br>a<br>150<br>PEC<br>100<br>VCE = 5V<br>f = 100MHz<br>50<br>0<br>0 20 40 60 80 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current<br>, COLLECTOR EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>, BASE EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>, OUTPUT CAPACITANCE (pF)<br>obo<br>, BASE EMITTER SATURATION VOLTAGE (V) C<br>BE(SAT)<br>V<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DXT651 Document Number: DS31184 Rev: 5 - 2 

February 2013 © Diodes Incorporated 

**DXT651** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [326 x 400] intentionally omitted <==**

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D1<br>C<br>SOT89<br>Dim  Min  Max<br>H A 1.40 1.60<br>H<br>E B 0.44  0.62<br>B1 0.35 0.54<br>C 0.35 0.44<br>B1 B L D 4.40 4.60<br>:<br>D1  1.62  1.83<br>i e E 2.29  2.60<br>8° (4X) e 1.50 Typ<br>H 3.94  4.25<br>H1 2.63 2.93<br>A L 0.89 1.20<br>All Dimensions in mm<br>D<br>yout out<br>+ X1<br>Dimensions Value (in mm)<br>X  0.900<br>X2  ( 2x) X1  1.733<br>X2  0.416<br>Y1 Y  1.300<br>Y3 Y4 Y1  4.600<br>Y2  1.475<br>Y Y2 Y3 0.950<br>“ reO LE Y4  1.125<br>C 1.500<br>C<br>c or es<br>X (3x)<br>R0.200<br>1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

5 of 6 **www.diodes.com** 

DXT651 Document Number: DS31184 Rev: 5 - 2 

February 2013 © Diodes Incorporated 

**DXT651** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com** 

6 of 6 **www.diodes.com** 

DXT651 Document Number: DS31184 Rev: 5 - 2 

February 2013 © Diodes Incorporated 



## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dxt651-13/trans-npn-60v-3a-150deg-c-1w/dp/3943169)
---

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