# Bipolar (BJT) Single Transistor, PNP, 100 V, 5 A, 3.2 W, PowerDI5, Surface Mount

![Product image](https://novapart.co/image/farnell:3943166/)

**URL**: https://novapart.co/products/DXT2013P5-13/bipolar-bjt-single-transistor-pnp-100-v-5-a-32-w
**SKU**: DXT2013P5-13
**Manufacturer**: DIODES INC.
**Price**: €0.2000
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | DXT Series |
| Qualification | - |
| Power Dissipation | 3.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 125MHz |
| Transistor Case Style | PowerDI5 |
| Dc Current Gain Hfe Min | 5hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943166/)

**A Product Line of Diodes Incorporated** 

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**----- Start of picture text -----**<br>
DXT2013P5<br>**----- End of picture text -----**<br>


## **100V PNP MEDIUM POWER TRANSISTOR PowerDI[®] 5** 

## **Features** 

- 43% smaller than SOT223; 60% smaller than TO252 

- Maximum height just 1.1mm 

- Rated up to 3.2W 

- VCEO = -100V 

- IC = -5A; ICM = -10A 

- Low Saturation voltage 

- **Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)** 

## **Mechanical Data** 

   - ® 

   - • Case: PowerDI 5 

   - Case Material:  Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.093 grams (approximate) 

- **“Green” Device (Note 2)** 

## **Applications** 

- SLIC DC-DC Converter 

|eo|eo|eo||C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~|C<br>B<br>E<br> ~~6~~||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Top View|Bottom View||Device Schematic||Pin-out diagram||||||||||
|**Information (Note 3)**|||||||||||||||
||||||||||||||||
|**Part Number**|||**Case**|||||||||||**Packaging**|
|DXT2013P5-13|||PowerDI|®5||||||||5000/Tape &Reel|||



## **Ordering Information (Note 3)** 

Notes: 1. No purposefully added lead. Halogen and Antimony Free. 

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

DXT2013 = Product Type Marking Code **DXT2013** = Manufacturers’ Code Marking K = Factory Designator YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 09 for 2009) **YYWWK** WW = Week code (01 to 53) 

PowerDI is a registered trademark of Diodes Incorporated. DXT2013P5 Document number: DS32010 Rev. 2 - 2 

1 of 7 

March 2010 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated DXT2013P5** f 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-140|V|
|Collector-Emitter Voltage|VCEO|-100|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-5|A|
|Peak Pulse Current|ICM|-10|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation@TA= 25°C(Note 4)|PD|3.2|W|
|Thermal Resistance,Junction to Ambient Air(Note 4) @TA= 25°C|RθJA|39|°C/W|
|Power Dissipation@TA= 25°C(Note 5)|PD|1.7|W|
|Thermal Resistance,Junction to Ambient Air(Note 5) @TA= 25°C|RθJA|75|°C/W|
|Power Dissipation@TA= 25°C(Note 6)|PD|0.74|W|
|Thermal Resistance,Junction to Ambient Air(Note 6) @TA= 25°C|RθJA|169|°C/W|
|Thermal Resistance,Junction to Collector Terminal|RθJT|5.6|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 4. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm. 

   5. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm. 

   6. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout. 

PowerDI is a registered trademark of Diodes Incorporated. DXT2013P5 Document number: DS32010 Rev. 2 - 2 

2 of 7 **www.diodes.com** 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DXT2013P5** 

**==> picture [434 x 525] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.5<br>10 V CE(sat)<br>Limited 3.0<br>PT TANG OSKENYN AEA 2.5<br>See note 3<br>1<br>DC 2.0<br>See note 4<br>1s 1.5<br>See note 5<br>100m 100ms 10ms 1ms 1.0<br>a, WN a. <ees<br>a Single Pulse. Tamb=25°C 100µs aa 0.5 XK<br>a(TTT ooen i ee = es<br>See note 3<br>10m nie 0.0 ee eS Ne<br>100m 1 10 100 0 25 50 75 100 125 150 175<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>40 See note 3 Single Pulse. Tamb=25°C<br>Fn oa HITEC HTC egra 100 BaNope fof See note 3 lltH<br>30<br>D=0.5<br>20 Sn TNE TIE TA<br>10<br>D=0.2 Single Pulse<br>10<br>D=0.05<br>rN IMT A<br>ne D=0.1<br>0 ert MM lll TET 1 TIT ELITE EIN ETN LTT TTT LTR<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>4<br>180 Pt EE T =25 ° C i T =25°C pu<br>160 (amb) (amb)<br>PEReT th Hl 3 aLLL, AT<br>140<br>120 1 oz. weight Copper 2 oz. weight Copper<br>2<br>100 pt AN Hl iantil|<br>80 esPt TTT NSE TTT eey, iw lll<br>a TTT INNATE TTT ve 4<br>60 a SSNTs]| 1 | | |Be aee |<br>2 oz. weight Copper so een 1 oz. weight Copper |<br>40<br>20 Pore CeSt eee 0 Bain; l|<br>10 100 1000 10000 10 100 1000 10000<br> Copper Area (sq mm) Copper Area (sq mm)<br>Thermal Resistance vs. Cu Area Power Rating vs. Cu Area<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br>Power Rating (W)<br> Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. 

3 of 7 

DXT2013P5 Document number: DS32010 Rev. 2 - 2 

March 2010 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated** 

**DXT2013P5** [| 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|V(BR)CBO|-140|-160|⎯|V|IC= -100μA|
|Collector-Emitter Breakdown Voltage(Note 7)|V(BR)CEO|-100|-115|⎯|V|IC= -10mA|
|Emitter-Base Breakdown Voltage|V(BR)EBO|-7.0|-8.1|⎯|V|IE= -100μA|
|Collector Cutoff Current|ICBO|⎯|<1<br>⎯|-20<br>-0.5|nA<br>μA|VCB= -100V<br>VCB= -100V,Tamb= 100 °C|
|Collector Cutoff Current|ICER<br>R≤1kΩ|⎯|<1<br>⎯|-20<br>-0.5|nA<br>μA|VCB= -100V<br>VCB= -100V,Tamb= 100 °C|
|Emitter Cutoff Current|IEBO|⎯|<1|-10|nA|VEB= -6V|
|Collector-Emitter Saturation Voltage (Note 7)<br>~~cc~~|VCE(sat)<br>~~cc~~|⎯<br>~~cc~~|-20<br>-70<br>-120<br>-240<br>~~cc~~|-30<br>-90<br>-150<br>-340<br>~~cc~~|mV<br>~~cc~~|IC= -0.1A, IB= -10mA<br>IC= -1A, IB= -100mA<br>IC= -2A, IB= -200mA<br>IC= -4A,IB= -400mA<br>~~cc~~|
|Base-Emitter Saturation Voltage(Note 7)<br>~~cc~~|VBE(sat)<br>~~cc~~|⎯<br>~~cc~~|-985<br>~~cc~~|-1100<br>~~cc~~|mV<br>~~cc~~|IC= -4A,IB= -400mA<br>~~cc~~|
|Base-Emitter Turn-On Voltage(Note 7)<br>~~To~~|VBE(on)|⎯<br>~~tft~~|-920<br>~~tft~~|-1050<br>~~tft~~|mV<br>~~tft~~|VCE= -4V,IC= -2A|
|DC Current Gain (Note 7)<br>~~ft~~<br>~~To~~|hFE<br>~~ft~~|100<br>100<br>25<br>15<br>⎯<br>~~ft~~<br>~~tft~~|250<br>200<br>50<br>30<br>5<br>~~ft~~<br>~~tft~~|⎯<br>300<br>⎯<br>⎯<br>⎯<br>~~ft~~<br>~~tft~~|⎯<br>~~ft~~<br>~~tft~~|IC= -10mA, VCE= -1V<br>IC= -1A, VCE= -1V<br>IC= -3A, VCE= -1V<br>IC= -4A, VCE= -1V<br>IC= -10A,VCE= -1V<br>~~ft~~|
|Transition Frequency<br>~~ft~~<br>~~To~~|fT<br>~~ft~~|⎯<br>~~ft~~<br>~~tft~~|125<br>~~ft~~<br>~~tft~~|⎯<br>~~ft~~<br>~~tft~~|MHz<br>~~ft~~<br>~~tft~~|IC= -100mA, VCE= -10V,<br>f =50MHz<br>~~ft~~|
|Output Capacitance<br>~~To~~|Cobo|⎯<br>~~tft~~|42<br>~~tft~~|⎯<br>~~tft~~|pF<br>~~tft~~|VCB= -10V,f = 1MHz|
|Switching Times<br>~~To~~|ton<br>toff|⎯<br>⎯<br>~~tft~~|42<br>540<br>~~tft~~|⎯<br>⎯<br>~~tft~~|ns<br>ns<br>~~tft~~|IC= -1A, VCC= -10V,<br>IB1= IB2= -100mA|



Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. 

PowerDI is a registered trademark of Diodes Incorporated. DXT2013P5 Document number: DS32010 Rev. 2 - 2 

4 of 7 **www.diodes.com** 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DXT2013P5** 

## **Typical Characteristic** 

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**----- Start of picture text -----**<br>
1 0.6<br>Tamb=25°C PTT a I C /I B =10<br>I C /I B =50 0.5<br>Sa A<br>YT aT IC/IB Riede =20 NW AAIaril 0.4 Cota||ccc<br>100m a| es alll NS  AM Il 0.3 aA<br>SSHee ericaee” ame 0.2 PTT ETI Fak 100°C25°C | yfFH<br>Suu ene oon ce SA<br>0.1<br>ono lll ZA<br>IC/IB=10 -55°C<br>10m aatiTT] il 0.0 SinpT 4m | HH<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>VCE(SAT) v IC VCE(SAT) v IC<br>250<br>1.4 SSeS V CE =2V 1.2 IC/IB=10 TOM oom<br>100°C<br>1.2 Hall TISSUIC_ 200 EI ih<br>1.0 |Steet ati \ att|| 1.0 PHTA PHay|<br>0.8 25°C 150 -55°C<br>EcRll LTEE TTAEenns TTT 0.8 Eeeee ee | | ie|A<br>0.6 100 25°C<br>0.4 SeLN -55 Sete °C a at| 50 0.6 eer= 100°C pertamanoLoe =H<br>0.2<br>|Hy tH HEN 0.4 spogibe=A<br>0.0 LC [Crrii] Cerl —CCrnn E 0 aoil<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>hFE v IC VBE(SAT) v IC<br>1.4<br>1.2 gg V CE =2V iET RE EL<br>Al<br>1.0 -55°C<br>A 25°C<br>0.8 aFeZA<br>erm<br>0.6 PTSere<br>erm MIS ern Con<br>0.4 100°C<br>CiallSTHCT<br>1m 10m 100m 1 10<br>- IC   Collector Current (A)<br>VBE(ON) v IC<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)FE<br>  (V)<br>BE(SAT)<br>- V<br>Normalised Gain  Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. 

5 of 7 

DXT2013P5 Document number: DS32010 Rev. 2 - 2 

March 2010 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated DXT2013P5** [| 

## **Package Outline Dimensions** 

|E<br>E1<br>b1<br>A<br>A2<br>A2<br>~~D~~<br>~~b2~~<br>b1<br>e<br>~~rie~~<br>~~rit~~<br>~~all~~<br>~~Yl~~ <br>~~cia~~|~~D2~~<br>L<br>E2<br>L1<br>W<br>~~ee~~<br> ~~teal~~|**PowerDI**<br>~~®~~**5**<br>**Dim**<br>**Min**<br>**Max **<br>**A**<br>1.05<br>1.15<br>**A2**<br>0.33<br>0.43<br>**b1**<br>0.80<br>0.99<br>**b2**<br>1.70<br>1.88<br>**D**<br>3.90<br>4.05<br>**D2**<br>3.054 Typ<br>**E**<br>6.40<br>6.60<br>**e**<br>1.84 Typ<br>**E1**<br>5.30<br>5.45<br>**E2**<br>3.549Typ<br>**L**<br>0.75<br>0.95<br>**L1**<br>0.50<br>0.65<br>**W**<br>1.10<br>1.41<br>**All Dimensions in mm**|
|---|---|---|



## **Suggested Pad Layout** 

~~Z C~~ E1 X2 X1 ~~Ci~~ Y1 ~~Y2 = Pas~~ 

|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|6.6|
|**X1**|1.4|
|**X2**|3.6|
|**Y1**|0.8|
|**Y2**|4.7|
|**C**|3.87|
|**E1**|0.9|



PowerDI is a registered trademark of Diodes Incorporated. 

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**A Product Line of Diodes Incorporated DXT2013P5** f 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

|Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes<br>without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the<br>application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or<br>trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume<br>all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated<br>website, harmless against all damages.<br>Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.<br>Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and<br>hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or<br>indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.<br>Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings<br>noted herein may also be covered by one or more United States, international or foreign trademarks.<br>**LIFE SUPPORT**|
|---|
|Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express|
|written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:|
|A.   Life support devices or systems are devices or systems which:|
|1. are intended to implant into the body, or|
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|Copyright © 2010, Diodes Incorporated|
|**www.diodes.com**|



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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dxt2013p5-13/trans-pnp-100v-5a-150deg-c-3-2w/dp/3943166)
---

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