# Bipolar (BJT) Single Transistor, POWERDI®5, NPN, 60 V, 6 A, 3.2 W, PowerDI5, Surface Mount

![Product image](https://novapart.co/image/farnell:1823451/)

**URL**: https://novapart.co/products/DXT2010P5-13/bipolar-bjt-single-transistor-powerdi5-npn-60-v-6
**SKU**: DXT2010P5-13
**Manufacturer**: DIODES INC.
**Price**: €0.2110
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:130MHz; Power Dissipation Pd:3.2W; DC Collector Current:6A; DC Current Gain hFE:200hFE; Transistor C

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 130MHz |
| Transistor Case Style | PowerDI5 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 6A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1823451/)

**A Product Line of Diodes Incorporated** 

**DXT2010P5** 

## **60V NPN MEDIUM POWER TRANSISTOR PowerDI[®] 5** 

## **Features** 

- 43% smaller than SOT223; 60% smaller than TO252 

- Maximum height just 1.1mm 

- Rated up to 3.2W 

- VCEO = 60V 

- IC = 6A; ICM = 20A 

- Low Saturation voltage 

- **Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)** 

## **Mechanical Data** 

   - ® 

   - • Case: PowerDI 5 

   - Case Material:  Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.093 grams (approximate) 

- **“Green” Device (Note 2)** 

## **Applications** 

- Motor driver 

- Regulator circuit 

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Top View Bottom View<br>**----- End of picture text -----**<br>


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C<br>C<br>B<br>E B E<br>Device Schematic Pin-out diagram<br>**----- End of picture text -----**<br>


## **Ordering Information (Note 3)** 

|**Ordering Information (Note 3)g Information (Note 3) Information (Note 3) (Note 3)**||||
|---|---|---|---|
|**Part Number**|**Case**||**Packaging**|
|DXT2010P5-13|PowerDI|®5|5000/Tape &Reel|



Notes: 1. No purposefully added lead. Halogen and Antimony Free. 

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
DXT2010<br>YYWWK<br>**----- End of picture text -----**<br>


DXT2010 = Product Type Marking Code = Manufacturers’ Code Marking K = Factory Designator YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 09 for 2009) WW = Week code (01 to 53) 

PowerDI is a registered trademark of Diodes Incorporated. DXT2010P5 Document number: DS32011 Rev. 2 - 2 

1 of 7 

March 2010 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated** 

**DXT2010P5** f 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|150|V|
|Collector-Emitter Voltage|VCEO|60|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|6|A|
|Peak Pulse Current|ICM|20|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation@TA= 25°C(Note 4)|PD|3.2|W|
|Thermal Resistance,Junction to Ambient Air(Note 4) @TA= 25°C|RθJA|39|°C/W|
|Power Dissipation@TA= 25°C(Note 5)|PD|1.7|W|
|Thermal Resistance,Junction to Ambient Air(Note 5) @TA= 25°C|RθJA|75|°C/W|
|Power Dissipation@TA= 25°C(Note 6)|PD|0.74|W|
|Thermal Resistance,Junction to Ambient Air(Note 6) @TA= 25°C|RθJA|169|°C/W|
|Thermal Resistance,Junction to Collector Terminal|RθJT|5.6|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 4. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 25mm x 25mm. 

   5. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 50mm x 50mm. 

   6. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout. 

PowerDI is a registered trademark of Diodes Incorporated. DXT2010P5 Document number: DS32011 Rev. 2 - 2 

2 of 7 **www.diodes.com** 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DXT2010P5** 

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**----- Start of picture text -----**<br>
3.5<br>V<br>CE(sat)<br>10 Limited SafWRNSesNNNeee  aiTl 3.0 rT|NTfffsdfféfdftf<br>2.5<br>1 PRINTNET DC 2.0 PN See note 3 ||<br>See note 4<br>1s 1.5<br>See note 5<br>100ms<br>100m pT 10ms IAL 1ms AT SANAAN till 1.0 PCT ON<br>Single Pulse. Tamb=25°C 100µs 0.5<br>See note 3<br>10m Ett il 0.0 PO — L<br>100m 1 10 100 0 25 50 75 100 125 150 175<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>40 See note 3 Single Pulse. Tamb=25°C<br>a eprn 100 AATNe TTaIl See note 3 |i<br>30<br>D=0.5 TA TT ITA PTE NAGE TSE Se pS STE<br>20 mle fF FCO CSS CM CCC<br>10<br>useat a A A A<br>D=0.2 Single Pulse<br>10<br>ines A. |<br>D=0.05<br>NLM Tl CO CCC CICCCT<br>oe D=0.1<br>0 rm TE TT IN CLIT 1 UTI VATA ETT PATI TE ETT UT<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>4<br>180 T =25 ° C T =25°C<br>160 (amb) (amb)<br>3<br>140<br>RHE HH HHH al<br>oo il Vl<br>120 1 oz. weight Copper 2 oz. weight Copper<br>Hl 2 bc<br>100<br>a >, f aT<br>PCT NANT ee alll<br>8060 PTa TTT NUNNUTTTT] 1 | | a| eeawae ae ll<br>40 2 oz. weight Copper a ll | Tl | 1 oz. weight Copper l|<br>nt eee |<br>20 PC Ee 0 ie |<br>10 100 1000 10000 10 100 1000 10000<br> Copper Area (sq mm) Copper Area (sq mm)<br>Thermal Resistance vs. Cu Area Power Rating vs. Cu Area<br>  Collector Current (A)<br>IC<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br>Power Rating (W)<br> Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. DXT2010P5 Document number: DS32011 Rev. 2 - 2 

3 of 7 **www.diodes.com** 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DXT2010P5** | 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|Collector-Base Breakdown Voltage<br>~~SSS~~|V(BR)CBO<br>~~SSS~~|150<br>~~SSS~~|190<br>~~SSS~~|⎯<br>~~SSS~~|V<br>~~SSS~~|IC= 100μA<br>~~SSS~~|
|Collector-Emitter Breakdown Voltage(Note 7)<br>~~SSS~~|V(BR)CEO<br>~~SSS~~|60<br>~~SSS~~|80<br>~~SSS~~|⎯<br>~~SSS~~|V<br>~~SSS~~|IC= 10mA<br>~~SSS~~|
|Emitter-Base Breakdown Voltage<br>~~SSS~~|V(BR)EBO<br>~~SSS~~|7.0<br>~~SSS~~|8.1<br>~~SSS~~|⎯<br>~~SSS~~|V<br>~~SSS~~|IE= 100μA<br>~~SSS~~|
|Collector Cutoff Current<br>~~SSS~~|ICBO<br>~~SSS~~|⎯<br>~~SSS~~|⎯<br>~~SSS~~|20<br>0.5<br>~~SSS~~|nA<br>μA<br>~~SSS~~|VCB= 120V<br>VCB= 120V,Tamb= 100 °C<br>~~SSS~~|
|Collector Cutoff Current<br>~~SSS~~|ICER<br>R≤1kΩ<br>~~SSS~~|⎯<br>~~SSS~~|⎯<br>~~SSS~~|20<br>0.5<br>~~SSS~~|nA<br>μA<br>~~SSS~~|VCB= 120V<br>VCB= 120V,Tamb= 100 °C<br>~~SSS~~|
|Emitter Cutoff Current<br>~~SSS~~|IEBO<br>~~SSS~~|⎯<br>~~SSS~~|⎯<br>~~SSS~~|10<br>~~SSS~~|nA<br>~~SSS~~|VEB= 6V<br>~~SSS~~|
|Collector-Emitter Saturation Voltage (Note 7)<br>~~TT~~|VCE(sat)<br>~~TT~~|⎯<br>~~TT~~|20<br>45<br>50<br>100<br>210<br>~~TT~~|30<br>60<br>70<br>135<br>260<br>~~TT~~|mV<br>~~TT~~|IC= 100mA, IB= 5mA<br>IC= 1A, IB= 100mA<br>IC= 1A, IB= 50mA<br>IC= 2A, IB= 50mA<br>IC= 6A,IB= 300mA<br>~~TT~~|
|Base-Emitter Saturation Voltage(Note 7)<br>~~TT~~|VBE(sat)<br>~~TT~~|⎯<br>~~TT~~|1000<br>~~TT~~|1100<br>~~TT~~|mV<br>~~TT~~|IC= 6A,IB= 300mA<br>~~TT~~|
|Base-Emitter Turn-On Voltage(Note 7)|VBE(on)|⎯|940|1050|mV|VCE= 1V,IC= 6A|
|DC Current Gain (Note 6)<br>~~oP~~|hFE<br>~~oP~~|100<br>100<br>55<br>20<br>~~oP~~|200<br>200<br>105<br>40<br>~~oP~~|⎯<br>300<br>⎯<br>⎯<br>~~oP~~|⎯<br>~~oP~~|IC= 10mA, VCE= 1V<br>IC= 2A, VCE= 1V<br>IC= 5A, VCE= 1V<br>IC= 10A,VCE= 1V<br>~~oP~~|
|Transition Frequency<br>~~ee~~|fT<br>~~ee~~|⎯<br>~~ee~~|130<br>~~ee~~|⎯<br>~~ee~~|MHz<br>~~ee~~|IC= 100mA,  VCE= 10V<br>f = 50MHz<br>~~ee~~|
|Output Capacitance(Note 7)<br>~~ee~~|Cobo<br>~~ee~~|⎯<br>~~ee~~|31<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VCB= -10A,f = 1MHz<br>~~ee~~|
|Switching Times<br>~~a~~|ton<br>toff|⎯<br>⎯|42<br>760|⎯<br>⎯|ns<br>ns|IC= 1A, VCC= 10V,<br>IB1= IB2= 100mA|



Notes: 7.  Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. 

PowerDI is a registered trademark of Diodes Incorporated. 

4 of 7 **www.diodes.com** 

DXT2010P5 Document number: DS32011 Rev. 2 - 2 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DXT2010P5** 

## **Typical Characteristic** 

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**----- Start of picture text -----**<br>
1 0.6<br>Tamb=25°C I C /I B =10<br>et 0.5 ottconic<br>0.4<br>eT i, i |<br>100m AIM IN ELT ZA EN 100°C<br>0.3<br>ea NY |<br>25°C<br>Pent IC/IB=50 0.2 Reine A<br>SN IN IC/IB=20 ine Se///illa<br>10m LT Ht IC/IB=10 ia 0.1 ZA -55°C<br>=eEEE EH HE EEE EE EH= 0.0 Sneeae| |<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>VCE(SAT) v IC VCE(SAT) v IC<br>250 1.6<br>on oo oo VCE=1V IC/IB=10 TiC<br>1.2 aSeal eae 100°C en 200 1.4 Fs MCEF<br>1.0 1.2<br>a ee eaeA TT0<br>0.8 = 25°C 150 Pe -55°C fo fa a |<br>1.0<br>cM ec nN HHI 25°C<br>0.6 0SCNT 100 0.8 aae eee<br>0.4 ante -55°C EIN re<br>A Tf 50 0.6 erin<br>0.2<br>ce hs 0.4 SS Tt! 100°C In|<br>0.0 PCO COT CC CES 0 PEE CCE al COI<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>hFE v IC VBE(SAT) v IC<br>1.4 V CE =1V<br>oea<br>1.2 |<br>aeya<br>-55°C<br>1.0 ee | Ss<br>25°C<br>0.8 aieANE PIEMINTseer TUTPiral<br>Perr TTTTI<br>0.6 YL eeeeT<br>oe|<br>0.4 100°C<br>aTTI |Cn<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>VBE(ON) v IC<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. 

5 of 7 **www.diodes.com** 

DXT2010P5 Document number: DS32011 Rev. 2 - 2 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DXT2010P5** ~~a~~ 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
D A PowerDI ® 5<br>D2 Dim  Min  Max<br>A2<br>b2 A 1.05 1.15<br>A2 0.33 0.43<br>L<br>b1 0.80 0.99<br>b2 1.70 1.88<br>D 3.90 4.05<br>E E1 E2 D2 3.054 Typ<br>E 6.40 6.60<br>e 1.84 Typ<br>W E1 5.30 5.45<br>-) fH Lo L1 E2 3.549 Typ<br>J) Ul tet<br>L 0.75 0.95<br>e L1 0.50 0.65<br>W 1.10 1.41<br>b1 b1 A2 All Dimensions in mm<br>ica |<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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**----- Start of picture text -----**<br>
Z<br>C<br>E1<br>X2<br>X1<br>a<br>Y1<br>Y2<br>1H<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|6.6|
|**X1**|1.4|
|**X2**|3.6|
|**Y1**|0.8|
|**Y1**<br>**Y2**|0.8<br>4.7|
|**C**|3.87|
|**E1**|0.9|



PowerDI is a registered trademark of Diodes Incorporated. 

6 of 7 **www.diodes.com** 

DXT2010P5 Document number: DS32011 Rev. 2 - 2 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DXT2010P5** f 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated **www.diodes.com** 

PowerDI is a registered trademark of Diodes Incorporated. 

7 of 7 **www.diodes.com** 

DXT2010P5 Document number: DS32011 Rev. 2 - 2 

March 2010 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dxt2010p5-13/trans-npn-60v-6a-powerdi5/dp/1823451)
---

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