DSEP60-12AR

Advanced Technical Information 

**DSEP 60-12AR** 

## **HiPerFRED[TM] Epitaxial Diode with soft recovery** 

**IFAV = 60 A VRRM = 1200  V trr = 40 ns** 

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|---|---|---|
|VRSM|VRRM|Type|
|V|V|
|1200|1200|DSEP 60-12AR|

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ISOPLUS 247 [TM]<br>A C<br>C<br>TAB<br>A<br>A = Anode, C = Cathode<br>**----- End of picture text -----**<br>


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|---|---|---|---|---|---|
|Symbol|Conditions|Maximum Ratings|
|IFRMS|70|A|
|IFAVM|TC = 90°C; rectangular, d = 0.5|60|A|
|IFSM|TVJ = 45°C; tp = 10 ms (50 Hz), sine|500|A|
|EAS|TVJ = 25°C; non-repetitive|23|mJ|
|IAS = 14.5 A; L = 180 µH|
|IAR|VA = 1.5|·|VR typ.; f = 10 kHz; repetitive|1.5|A|
|TVJ|-55...+175|°C|
|TVJM|175|°C|
|Tstg|-55...+150|°C|
|Ptot|TC = 25°C|190|W|
|Mf|mounting force|20...120|N|
|Weight|typical|6|g|

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**Maximum Ratings** 

## **Features** 

- International standard package 

- Planar passivated chips 

- Very short recovery time 

- Extremely low switching losses 

- Low IRM-values 

- Soft recovery behaviour 

- Epoxy meets UL 94V-0 

## **Applications** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode in converters and motor control circuits 

- Rectifiers in switch mode power supplies (SMPS) 

- Inductive heating 

- Uninterruptible power supplies (UPS) 

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|---|---|---|---|---|---|
|Symbol|Conditions|Characteristic Values|
|typ.|max.|
|IR|①|VR|= VRRM;|TVJ =    25°C                                                           650            µA|
|VR|= VRRM;|TVJ = 150°C|2.5|mA|
|VF|②|IF = 60 A;|TVJ = 150°C|1.74|V|
|TVJ =   25°C|2.66|V|
|RthJC|0.8|K/W|
|RthCH|0.25|K/W|
|trr|IF = 1 A; -di/dt = 300 A/µs;|40|ns|
|VR = 30 V; TVJ = 25°C|
|IRM|VR = 100 V;|IF = 130 A;|7|14.3|A|
|-diF/dt = 100 A/µs; TVJ = 100°C|

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- Ultrasonic cleaners and welders 

## **Advantages** 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

- Low IRM reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Dimensions see Outlines.pdf** 

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µ s, Duty Cycle < 2.0 % 

Data according to IEC 60747 and per diode unless otherwise specified. 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 

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