# Fast / Ultrafast Diode, 1.2 kV, 15 A, Single, 4.04 V, 20 ns, 110 A
**URL**: https://novapart.co/products/DSEP15-12CR/fast-ultrafast-diode-12-kv-15-a-single-404-v-20-ns
**SKU**: DSEP15-12CR
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.9400
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 2 Pin |
| Product Range | DSEP1 |
| Diode Case Style | ISOPLUS-247 |
| Diode Configuration | Single |
| Forward Voltage Max | 4.04V |
| Forward Surge Current | 110A |
| Reverse Recovery Time | 20ns |
| Average Forward Current | 15A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1300066/)
**DSEP 15-12CR**
## **HiPerDynFRED[TM] Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)**
**IFAV = 15 A VRRM = 1200 V trr = 20 ns**
## Preliminary Data
**VRSM VRRM Type V V 1200 1200 DSEP 15-12CR** ~~OO~~
**==> picture [65 x 46] intentionally omitted <==**
**----- Start of picture text -----**
A C
Gy.
**----- End of picture text -----**
## **ISOPLUS 247[TM]**
**==> picture [91 x 21] intentionally omitted <==**
**----- Start of picture text -----**
C
A
Isolated back surface *
**----- End of picture text -----**
A = Anode, C = Cathode
- Patent pending
|**V**
**1200**
~~OO~~|**V**
**1200**
**DSEP 15-12CR**
~~OO~~|C
A
Gy.|C
A
Gy.|
|---|---|---|---|
|**Symbol**|**Conditions**|**Maximum Ratings**||
|**IFRMS**||50|A|
|**IFAVM**|TC= 130°C; rectangular, d = 0.5|15|A|
|**IFRM**|tP< 10 µs; rep. rating, pulse width limited by TVJM
tbd||A|
|**IFSM**|TVJ= 45°C; tp= 10 ms (50 Hz), sine|110|A|
|**EAS**
**IAR**|TVJ= 25°C; non-repetitive
IAS= 1.0 A; L = 180 µH
VA= 1.25**·**VRtyp.; f = 10 kHz; repetitive|0.1
0.1|mJ
A|
|**TVJ**||-55...+175|°C|
|**TVJM**||175|°C|
|**Tstg**
**Ptot**|TC= 25°C|-55...+150
150|°C
W|
|**VISOL**
**FC**|50/60 Hz RMS; IISOL1 mA
mounting force with clip|2500
20...120|V~
N|
|**Weight**|typical|6|g|
|**Symbol**|**Conditions**|**Characteristic Values**
**typ.**
**max.**||
|**IR**
x|TVJ= 25°C
VR = VRRM|100|µA|
|**VF** y|TVJ= 150°C VR = VRRM
IF= 15 A;
TVJ= 150°C
TVJ= 25°C|0.5
2.67
4.04|mA
V
V|
|**RthJC**||1|K/W|
|**RthCH**
**trr**|with heatsink compound
IF= 1 A; -di/dt = 200 A/µs;|0.25
20|K/W
ns|
||VR= 30 V; TVJ= 25°C|||
|**IRM**|VR= 100 V; IF= 25 A; -diF/dt = 100 A/µs
TVJ= 100°C|4.0
4.9|A|
## **Features**
- G Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
> G Low cathode to tab capacitance (<25pF)
- G International standard package
- G Planar passivated chips
> G Very short recovery time
> G Extremely low switching losses
- G Low IRM-values
> G Soft recovery behaviour
> G Epoxy meets UL 94V-0
> G Isolated and UL registered E153432
## **Applications**
> G Antiparallel diode for high frequency switching devices
- G Antisaturation diode
- G Snubber diode
- G Free wheeling diode in converters and motor control circuits
- G Rectifiers in switch mode power supplies (SMPS)
- G Inductive heating
> G Uninterruptible power supplies (UPS)
- G Ultrasonic cleaners and welders
## **Advantages**
> G Avalanche voltage rated for reliable operation
- G Soft reverse recovery for low EMI/RFI
- G Low IRM reduces:
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
- Power dissipation within the diode
- Turn-on loss in the commutating switch
## **Dimensions see outlines.pdf**
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 1
## Links
- [View this product on Novapart](https://novapart.co/products/DSEP15-12CR/fast-ultrafast-diode-12-kv-15-a-single-404-v-20-ns)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/dsep15-12cr/diode-fast-15a-isoplus247/dp/1300066)
---
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