# RECTIFIER, 600V, 30A, TO-263

![Product image](https://novapart.co/image/farnell:3954187/)

**URL**: https://novapart.co/products/DSEI36-06AS-TRL/rectifier-600v-30a-to-263
**SKU**: DSEI36-06AS-TRL
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €2.9100
**Stock**: 200+
**Lead Time**: 214 days (indicative)

## Description

Repetitive Peak Reverse Voltage:600V; Average Forward Current:30A; Diode Configuration:Single Dual Anode; Forward Voltage Max:1.54V; Reverse Recovery Time:80ns; Forward S 02AH9954

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single Dual Anode |
| Forward Voltage Max | 1.54V |
| Forward Surge Current | 300A |
| Reverse Recovery Time | 80ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3954187/)

## **DSEI36-06AS** 

## **FRED** 

**VRRM** _**=**_ **600 V I FAV** _**=**_ **30 A t rr** _**=**_ **35 ns** 

## Fast Recovery Epitaxial Diode Single Diode 

## **Part number** 

## **DSEI36-06AS** 

Backside: cathode 

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## **Features / Advantages:** 

- Planar passivated chips 

- Low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-263 (D2Pak) 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Disclaimer Notice** 

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20201012b 

© 2020 IXYS all rights reserved 

**DSEI36-06AS** 

|**Fast Diode**|**Fast Diode**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||||||
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||600|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||600|V|
|**I R**<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>480<br>600|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125|||100<br>7|mA<br>µA|
|**VF**<br>_forward voltage drop_|I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|T    =   25°C<br>VJ|||1.54<br>1.74|V<br>V|
||I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|T    =       °C<br>VJ<br>150|||1.38<br>1.67|V<br>V|
|**I**<br>**FAV**<br>_average forward current_|T  =       °C<br>C<br>110<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>150|||30|A|
|**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>150|||1.10<br>9.1|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**|||||0.8|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.25||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||155|W|
|**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||300|A|
|**CJ**<br>_junction capacitance_<br>V  =         V<br>600<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||22||pF|
|_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>37<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>**trr**<br>VR =<br>V<br>350||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||5.5<br>9||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||80<br>150||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20201012b 

© 2020 IXYS all rights reserved 

**DSEI36-06AS** 

|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|
|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal<br>**_1)_**||||35|A|
|**TVJ**<br>_virtual junction temperature_||-40||150|°C|
|**Top**<br>_operation temperature_||-40||125|°C|
|**Tstg**<br>_storage temperature_||-40||150|°C|
|**Weight**|||1.5||g|
|**FC**<br>_mounting force with clip_||20||N<br>60||
|1)IRMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2).  In case of (1) and a product<br>with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.||||||



1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2).  In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. 

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Product Marking<br>Part Number XXXXXXXXX<br>Logo IXYS yywwZ<br>Date Code<br>Location 123456<br>Lot#<br>**----- End of picture text -----**<br>


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|**Ordering**|**Ordering Number**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|
|Standard|DSEI36-06AS-TRL|DSEI36-06AS-TRL|Tape & Reel|800|500059|
|Alternative|DSEI36-06AS-TUB|DSEI36-06AS|Tube|50|469114|



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**----- Start of picture text -----**<br>
 Equivalent Circuits for Simulation * on die level T    =VJ 150°C<br>I V0 R 0 Fast<br>Diode<br>V 0 max threshold voltage 1.1 V<br>R0 max slope resistance * 6 mΩ<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20201012b 

© 2020 IXYS all rights reserved 

**DSEI36-06AS** 

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 Outlines TO-263 (D2Pak)<br>**----- End of picture text -----**<br>


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Millimeter Inches<br>Dim.<br>min max min max<br>A 4.06 4.83 0.160 0.190<br>W A1 typ. 0.10 typ. 0.004<br>A A2 2.41 0.095<br>c2 Supplier� b 0.51 0.99 0.020 0.039<br>Option<br>E b2 1.14 1.40 0.045 0.055<br>c 0.40 0.74 0.016 0.029<br>c2 1.14 1.40 0.045 0.055<br>A1 D 8.38 9.40 0.330 0.370<br>D1 8.00 8.89 0.315 0.350<br>4 D2 2.5 0.098<br>1 2 3<br>E 9.65 10.41 0.380 0.410<br>E1 6.22 8.50 0.245 0.335<br>e 2,54 BSC 0,100 BSC<br>c e1 4.28 0.169<br>2x e 3x b2 2x b H 14.61 15.88 0.575 0.625<br>10.92 L 1.78 2.79 0.070 0.110<br>(0.430) mm (Inches) E1 L1 1.02 1.68 0.040 0.066<br>typ. typ.<br>W 0.040 0.002<br>0.02 0.0008<br>All dimensions conform with<br>and/or within JEDEC standard.<br>1.78<br>(0.07)<br>2.54 (0.100) Recommended min. foot print<br>L1<br>D1<br>D<br>H<br>L L2<br>9.02<br>(0.355)<br>3.81<br>(0.150)<br>3.05<br>(0.120)<br>**----- End of picture text -----**<br>


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1<br>2/4<br>3<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20201012b 

© 2020 IXYS all rights reserved 

**DSEI36-06AS** 

## **Fast Diode** 

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60 3.0 40<br>TVJ = 100°C TVJ = 100°C<br>50 2.5 VR = 350 V VR = 350 V max.<br>30<br>40 2.0<br>max.<br>IF = 37 A<br>IF TVJ = 150°C Qr IF = 37 A IRM 74 A<br>30 100°C 1.5 74 A 20 37 A<br>[A] 25°C [µC] 18.5 A37 A [A] 18.5 A<br>20 1.0<br>typ.<br>10<br>10 0.5<br>typ.<br>0 0.0 0<br>0.0 0.5 1.0 1.5 2.0 1 10 100 1000 0 200 400 600<br>VF [V] -diF /dt [A/µs] -diF [/dt] [[A/µs]]<br>Fig. 2 Recovery charge Fig. 3 Peak reverse current<br>Fig. 1  Forward current versus<br>max. forward voltage drop versus -diF /dt versus -diF /dt<br>1.4 0.6 20 1000<br>TVJ = 100°C TVJ = 125°C<br>0.5 VR = 350 V IF = 37 A<br>1.2 16 800<br>max.<br>0.4 I F = 37 A tfr<br>1.0 74 A 12 600<br>Kf trr 0.3 18.5 A 37 A VFR [ns]<br>0.8 [µs] [V] 8 400<br>0.2<br>0.6 IRM 4 VFR 200<br>0.1 tfr<br>Qr typ.<br>0.4 0.0 0 0<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5 Recovery time Fig. 6 Peak forward voltage<br>vs. junction temperature versus -diF /dt versus -diF /dt<br>1.0<br>0.8 Constants for ZthJC calculation:<br>i Rthi (K/W) ti (s)<br>0.6<br>1 0.200 0.0018<br>Z<br>thJC<br>2 0.220 0.0100<br>0.4<br>3 0.080 0.5000<br>[K/W]<br>4 0.300 0.0900<br>0.2<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20201012b 

© 2020 IXYS all rights reserved 



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- [View this product on Novapart](https://novapart.co/products/DSEI36-06AS-TRL/rectifier-600v-30a-to-263)
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- [Supplier page](https://es.farnell.com/littelfuse/dsei36-06as-trl/rectifier-600v-30a-to-263/dp/3954187)
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