# Fast / Ultrafast Diode, 600 V, 15 A, Dual Common Cathode, 2.03 V, 35 ns, 110 A

![Product image](https://novapart.co/image/farnell:3438341/)

**URL**: https://novapart.co/products/DSEC30-06A/fast-ultrafast-diode-600-v-15-a-dual-common
**SKU**: DSEC30-06A
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €2.7700
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (12-Jan-2017) |
| No. Of Pins | 3 Pin |
| Product Range | HiPerFRED Series |
| Qualification | - |
| Diode Case Style | TO-247AD |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 2.03V |
| Forward Surge Current | 110A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 15A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3438341/)

**DSEC30-06A** 

## **HiPerFRED** 

VRRM = 600 V I FAV = 2x 15 A[t] rr = 35 ns 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 

## **Part number** 

DSEC30-06A 

Backside: cathode 

1 2 3 

## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-247 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131120b 

© 2013 IXYS all rights reserved 

**DSEC30-06A** 

|**Fast Diode**|**Fast Diode**|Ratings|Ratings|Ratings|Ratings|Ratings|
|---|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|||min.|typ.|max.|Unit|
|VRSM<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||600|V|
|VRRM<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||600|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>600<br>600|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||100<br>0.5|mA<br>µA|
|V F<br>_forward voltage drop_|I  =          A<br>F<br>15<br>I  =          A<br>F<br>30|T    =   25°C<br>VJ|||2.03<br>2.24|V<br>V|
||I  =          A<br>F<br>15<br>I  =          A<br>F<br>30|T    =       °C<br>VJ<br>150|||1.34<br>1.57|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>140<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||15|A|
|VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.99<br>14.3|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC|||||1.6|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH||||0.25||K/W|
|Ptot<br>_total power dissipation_||T    =   25°C<br>C|||95|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||110|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>400<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||12||pF|
|_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>300||TVJ =<br>°C<br>25<br>T<br>= 100°C<br>VJ||5<br>7||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>= 100°C<br>VJ||35<br>95||ns<br>ns|
|EAS<br>IAS =<br>A<br>L =<br>µH<br>1<br>180<br>_non-repetitive avalanche energy_||T<br>=<br>°C<br>25<br>VJ|||0.1|mJ|
|IAR<br>VA =<br>f = 10 kHz<br>1.5·VR typ.:<br>_repetitive avalanche current_|||||0.1|A|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131120b 

© 2013 IXYS all rights reserved 

**DSEC30-06A** 

|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal<br>1)|||50|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||6||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2||
||20||||



## Product Marking 

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Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br>


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|Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|---|---|
|Standard||DSEC30-06A|DSEC30-06A||Tube|30|473502|
|||||||||
|||Similar Part|Package|Voltage class||||
|||DSEC30-06B|TO-247AD(3)|600||||
|||DSEC29-06AC|ISOPLUS220AB(3)|600||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131120b 

© 2013 IXYS all rights reserved 

**DSEC30-06A** 

## **Outlines TO-247** 

|||||||||||||||E|E|E||||||||||||A|A|A|A2||Ø|Ø|P|P||||ØP1|ØP1|ØP1|D2|D2||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||
|Q||||||||||||||||||||||||||||||||S|||||||||||||**Sym.**|**Inches**<br>**min.**<br>**max.**||**Millimeter**<br>**min.**<br>**max.**||
||||||||||||||||||||||||||||||||||||||||||||||A|0.185|0.209|4.70|5.30|
||||||||||||||||||||||||||||||||||||||||||||D1||A1|0.087|0.102|2.21|2.59|
||||||||||||||||||||||||||D||||||||||||||||||||A2|0.059|0.098|1.50|2.49|
|2xE2|||||||||||||||||||||||||||||||||||||||||||||D<br>E|0.819<br>0.610|0.845<br>0.640|20.79<br>15.48|21.45<br>16.24|
|||||||||||||||||||||||||||||||||||||||||**4**|||||E2|0.170|0.216|4.31|5.48|
||||||||**1**||||||**2**|||||**3**|||||||||||||||||||||||||||e<br>L|0.215<br>0.780|BSC<br>0.800|5.46<br>19.80|BSC<br>20.30|
||||||||||||||||||||||||||||||||||||||||||||||L1|-|0.177|-|4.49|
||L1||||||||||||||||||||||||||||||||||||E1||||||||Ø P|0.140|0.144|3.55|3.65|
||||||||||||||||||||||||||||||||||||||||||||||Q|0.212|0.244|5.38|6.19|
||||||||||||||||||||||||||||||||||||||||||||||S|0.242|BSC|6.14|BSC|
||||||||||||||||||||||||||L||||||||||||||||||||b|0.039|0.055|0.99|1.40|
||||||||||||||||||||||||||||||||||||||||||||||b2|0.065|0.094|1.65|2.39|
||||||||||||||||||||||||||||||||||||||||||||||b4|0.102|0.135|2.59|3.43|
||2xb2|||||||||b4|||||||||||||||3xb||C|||A1|||||||||||||||c<br>D1<br>D2<br>E1|0.015<br>0.515<br>0.020<br>0.530|0.035<br>-<br>0.053<br>-|0.38<br>13.07<br>0.51<br>13.45|0.89<br>-<br>1.35<br>-|
|||||||||||2x||e|||||||||||||||||||||||||||||||||Ø P1|-|0.29|-|7.39|
|||||||||||||||||||||||||||||||||||||||||||||||||||



**==> picture [483 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 3<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131120b 

© 2013 IXYS all rights reserved 

**DSEC30-06A** 

## **Fast Diode** 

**==> picture [508 x 660] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 2000 40<br>TVJ = 100°C TVJ = 100°C<br>VR = 300 V V R = 300 V<br>TVJ = 150°C<br>30 100°C 1500 30<br>25°C<br>IF = 30A<br>IF Qr IF = 30A IRM 7.5 A15 A<br>20 1000 15 A 20<br>[A] [μC] 7.5 A [A]<br>10 500 10<br>0 0 0<br>0 1 2 100 1000 0 200 400 600 800 1000<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qr versus -diF /dt IRM versus -diF/dt<br>2.0 120 20 1.6<br>TVJ = 100°C TVJ = 100°C<br>VR = 300 V V I F = 15 A<br>110<br>1.5 15 1.2<br>trr 100 I F = 30A 15 A VFR trr<br>Kf 1.0 7.5 A 10 0.8<br>[ns] 90 [V]<br>IRM [μs]<br>0.5 5 0.4<br>Qr 80 VFR trr<br>0.0 70 0 0.0<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000<br>TVJ [°C] -diF /dt [A/μs] -diF [/dt] [[A/μs]]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>10<br>Constants for ZthJC calculation:<br>1<br>i Rthi (K/W) ti (s)<br>ZthJC<br>1 0.908 0.0052<br>0.1 2 0.350 0.0003<br>[K/W] 3 0.342 0.017<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t [s]<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131120b 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DSEC30-06A/fast-ultrafast-diode-600-v-15-a-dual-common)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/dsec30-06a/rectifier-dual-600v-15a-to-247ad/dp/3438341)
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