# CMOS Oscillator, MEMS, Low-Power Precision, 24 MHz, 3.3 V, -40 to 85 °C, SMD, 3.2mm x 2.5mm ![Product image](https://novapart.co/image/farnell:4225976/) **URL**: https://novapart.co/products/DSC1001CI1-024.0000T/cmos-oscillator-mems-low-power-precision-24-mhz-33 **SKU**: DSC1001CI1-024.0000T **Manufacturer**: MICROCHIP **Category**: Crystals & Oscillators || Oscillators || MEMS Oscillators **Price**: €0.4970 **Stock**: 50+ **Lead Time**: 50 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (04-Feb-2026) | | Frequency Nom | 24MHz | | Product Range | DSC1001 Series | | Supply Voltage Nom | 3.3V | | Frequency Stability + / - | 50ppm | | Operating Temperature Max | 85°C | | Operating Temperature Min | -40°C | | Oscillator Case / Package | SMD, 3.2mm x 2.5mm | | Oscillator Output Compatibility | CMOS | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4225976/) ## **DSC1001/3/4** ## **1.8V-3.3V Low-Power Precision CMOS Oscillators** ## **Features** - Frequency Range: 1 MHz to 150 MHz - Exceptional Stability over Temperature - ±10 ppm, ±20 ppm, ±25 ppm, ±50 ppm - Operating Voltage - 1.7 to 3.6V - Operating Temperature Range - Ext. Industrial –40°C to 105°C - Industrial –40°C to 85°C - Commercial –20°C to 70°C - Low Operating and Standby Current - 6 mA Operating (1 MHz) - 15 µA Standby (Max.) - Ultra Miniature Footprint - 2.5 mm x 2.0 mm x 0.85 mm - 3.2 mm x 2.5 mm x 0.85 mm - 5.0 mm x 3.2 mm x 0.85 mm - 7.0 mm x 5.0 mm x 0.85 mm - MIL-STD 883 Shock and Vibration Resistant - Pb Free, RoHS, Reach SVHC Compliant - AEC-Q100 Reliability Qualified ## **Applications** - Mobile Applications - Consumer Electronics - Portable Electronics - DVR, CCTV, Surveillance Cameras - Low Profile Applications - Industrial Applications ## **Benefits** - Pin for Pin “Drop-In” Replacement for Industry Standard Oscillators ## **General Description** The DSC1001/3/4 is a silicon MEMS based CMOS family of oscillators that offers excellent jitter and stability performance over a wide range of supply voltages and temperatures. The device operates from 1 MHz to 150 MHz with supply voltages between 1.8 to 3.3 volts and temperature ranges up to –40°C to 105°C. The DSC1001/3/4 incorporate an all silicon resonator that is extremely robust and nearly immune to stress related fractures, common to crystal based oscillators. Without sacrificing the performance and stability required of today’s systems, a crystal-less design allows for a higher level of reliability, making the DSC1001/3/4 ideal for rugged, industrial, and portable applications where stress, shock, and vibration can damage quartz crystal based systems. Available in industry standard packages, the DSC1001/3/4 can be “dropped-in” to the same PCB footprint as standard crystal oscillators. The DSC1003 and DSC1004 have the same functionality and performance as the DSC1001, but feature higher output drives of 25 pF and 40 pF, respectively. ## **Package Types** |**Package Types**||| |---|---|---| |**DSC1001/3/4**||| |CDFN/DFN||| |(Top View)||| |STANDBY#
1|4|VDD| |2
GND|3|OUT| - Semiconductor Level Reliability, Significantly Higher than Quartz - Short Mass Production Lead Times - Longer Battery Life/Reduced Power Consumption - Compact Plastic Package - Cost Effective DS20005529B-page 1  2017 Microchip Technology Inc. **DSC1001/3/4** ## **Block Diagram** **==> picture [312 x 235] intentionally omitted <==** **----- Start of picture text -----**
V OUTPUT
DD
RESONATOR PFD V CO
FRAC-NFRAC-N
PLL
STANDBY# GND
(PIN1)
**----- End of picture text -----**
DS20005529B-page 2  2017 Microchip Technology Inc. **DSC1001/3/4** ## **1.0 ELECTRICAL CHARACTERISTICS** ## **Absolute Maximum Ratings †** Input Voltage (VIN) ............................................................................................................................–0.3V to VDD + 0.3V ESD Protection ....................................................................................................... 4 kV HBM, ±200V MM, 1.5 kV CDM ## **Recommended Operating Conditions** Supply Voltage (VDD) ................................................................................................................................ +1.7V to +3.6V Output Load (ZL) ............................................................................................................................. R > 10 kΩ, C ≤ 15 pF **† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ## **TABLE 1-1: DC CHARACTERISTICS** **Electrical Characteristics:** VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified. |**Parameters**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |Frequency|F0|1|—|150|MHz|Single Frequency|| |Frequency Tolerance|∆f|—|—|±10|ppm|Includes frequency variations
due to initial tolerance,
temperature and power supply
voltage|| |||—|—|±20|||| |||—|—|±25|||| |||—|—|±50|||| |Aging|∆f|—|—|±5|ppm|1year@+25°C|| |SupplyCurrent, Standby|IDD|—|—|15|µA|T = +25°C|| |Output Startup Time
(Note 1)|tSU|—|1.0|1.3|ms|T = +25°C|| |Output Disable Time|tDA|—|20|100|ns|—|| |Output DutyCycle|SYM|45|—|55|%|—|| |Input Logic Level High|VIH|0.75 x VDD|—|—|V|—|| |Input Logic Level Low|VIL|—|—|0.25 x VDD|V|—|| |**VDD = 1.8V**|||||||| |Supply Current, No Load|IDD|—|6.0|6.3|mA|1 MHz|CL= 0 pF,
RL= ∞,
T = +25°C| |||—|6.5|7.1||27 MHz|| |||—|7.2|8.5||70 MHz|| |||—|8.3|11.9||150 MHz|| |Output Logic Level High|VOH|0.8 x VDD|—|—|V|–6 mA, DSC1004, CL= 40pF|| |||0.8 x VDD|—|—||–6 mA, DSC1003, CL= 25pF|| |||0.8 x VDD|—|—||–4 mA, DSC1001, CL= 15pF|| |Output Logic Level Low|VOL|—|—|0.2 x VDD|V|6 mA, DSC1004, CL= 40pF|| |||—|—|0.2 x VDD||6 mA, DSC1003, CL= 25pF|| |||—|—|0.2 x VDD||4 mA, DSC1001, CL= 15pF|| **Note 1:** tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical values. - **2:** Measured over 50k clock cycles. DS20005529B-page 3  2017 Microchip Technology Inc. ## **DSC1001/3/4** ## **TABLE 1-1: DC CHARACTERISTICS (CONTINUED)** **Electrical Characteristics:** VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified. |**Parameters**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |Output Transition Rise
Time|tR|—|1.4|3.0|ns|DSC1001, CL=
15pF|T = +25°C,
20% to 80%| |||—|1.5|3.0||DSC1003, CL=
25pF|| |||—|1.8|3.0||DSC1004, C2=
40pF|| |Output Transition Fall
Time|tF|—|1.0|3.0|ns|DSC1001, CL=
15pF|T = +25°C,
20% to 80%| |||—|1.1|3.0||DSC1003, CL=
25pF|| |||—|1.2|3.0||DSC1004, C2=
40pF|| |Jitter, Max.
Cycle-to-Cycle|JCC|—|60|—|ps|f = 100 MHz (Note 2)|| |Period Jitter|JP|—|10|15|psRMS|f = 100 MHz(Note 2)|| |**VDD = 2.5V**|||||||| |Supply Current, No Load|IDD|—|6.0|6.4|mA|1 MHz|CL= 0 pF,
RL= ∞,
T = +25°C| |||—|6.7|7.5||27 MHz|| |||—|7.7|9.4||70 MHz|| |||—|9.6|13.9||150 MHz|| |Output Logic Level High|VOH|0.9 x VDD|—|—|V|–6 mA, DSC1004, CL= 40pF|| |||0.8 x VDD|—|—||–6 mA, DSC1003, CL= 25pF|| |||0.8 x VDD|—|—||–4 mA, DSC1001, CL= 15pF|| |Output Logic Level Low|VOL|—|—|0.1 x VDD|V|6 mA, DSC1004, CL= 40pF|| |||—|—|0.2 x VDD||6 mA, DSC1003, CL= 25pF|| |||—|—|0.2 x VDD||4 mA, DSC1001, CL= 15pF|| |Output Transition Rise
Time|tR|—|1.0|2.0|ns|DSC1001, CL=
15pF|T = +25°C,
20% to 80%| |||—|1.1|2.0||DSC1003, CL=
25pF|| |||—|1.2|2.0||DSC1004, C2=
40pF|| |Output Transition Fall
Time|tF|—|0.9|2.0|ns|DSC1001, CL=
15pF|T = +25°C,
20% to 80%| |||—|1.0|2.0||DSC1003, CL=
25pF|| |||—|1.1|2.0||DSC1004, C2=
40pF|| - **Note 1:** tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical values. - **2:** Measured over 50k clock cycles. DS20005529B-page 4  2017 Microchip Technology Inc. **DSC1001/3/4** ## **TABLE 1-1: DC CHARACTERISTICS (CONTINUED)** **Electrical Characteristics:** VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified. |**Parameters**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |Jitter, Max.
Cycle-to-Cycle|JCC|—|50|—|ps|f = 100 MHz (Note 2)|| |Period Jitter|JP|—|5|10|psRMS|f = 100 MHz(Note 2)|| |**VDD = 3.3V**|||||||| |Supply Current, No Load|IDD|—|6.0|6.5|mA|1 MHz|CL= 0 pF,
RL= ∞,
T = +25°C| |||—|6.8|8.0||27 MHz|| |||—|8.2|10.5||70 MHz|| |||—|10.8|16.6||150 MHz|| |Output Logic Level High|VOH|0.9 x VDD|—|—|V|–8 mA, DSC1004, CL= 40pF|| |||0.9 x VDD|—|—||–6 mA, DSC1003, CL= 25pF|| |||0.8 x VDD|—|—||–4 mA, DSC1001, CL= 15pF|| |Output Logic Level Low|VOL|—|—|0.1 x VDD|V|8 mA, DSC1004, CL= 40pF|| |||—|—|0.1 x VDD||6 mA, DSC1003, CL= 25pF|| |||—|—|0.2 x VDD||4 mA, DSC1001, CL= 15pF|| |Output Transition Rise
Time|tR|—|1.0|2.0|ns|DSC1001, CL=
15pF|T = +25°C,
20% to 80%| |||—|1.1|2.0||DSC1003, CL=
25pF|| |||—|1.2|2.0||DSC1004, C2=
40pF|| |Output Transition Fall
Time|tF|—|0.9|2.0|ns|DSC1001, CL=
15pF|T = +25°C,
20% to 80%| |||—|1.0|2.0||DSC1003, CL=
25pF|| |||—|1.1|2.0||DSC1004, C2=
40pF|| |Jitter, Max.
Cycle-to-Cycle|JCC|—|50|—|ps|f = 100 MHz (Note 2)|| |Period Jitter|JP|—|5|10|psRMS|f = 100 MHz(Note 2)|| **Note 1:** tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical values. - **2:** Measured over 50k clock cycles. DS20005529B-page 5  2017 Microchip Technology Inc. ## **DSC1001/3/4** ## **TEMPERATURE SPECIFICATIONS (Note 1)** |**Parameters**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |**Temperature Ranges**||||||| |Operating Temperature Range (T)|TA|–40|—|+105|°C|OrderingOption L| |||–40|—|+85|°C|OrderingOption I| |||–20|—|+70|°C|OrderingOption E| |Junction OperatingTemperature|TJ|—|—|+150|°C|—| |Storage Temperature Range|TA|–55|—|+150|°C|—| |SolderingTemperature Range|TS|—|—|+260|°C|40 sec. max| **Note 1:** The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability. DS20005529B-page 6  2017 Microchip Technology Inc. **DSC1001/3/4** ## **2.0 PIN DESCRIPTIONS** The descriptions of the pins are listed in Table 2-1 and Table 2-2. ## **TABLE 2-1: CDFN PACKAGE PIN FUNCTION TABLE** |**Pin Number**|**Symbol**|**Description**| |---|---|---| |1|STANDBY#|Standbyinput(**Section 4.1 “Standby Function”**)| |2|GND|Power supply ground| |3|OUT|Oscillator output| |4|VDD|Positivepower supply| ## **TABLE 2-2: DFN PACKAGE PIN FUNCTION TABLE** |**Pin Number**|**Symbol**|**Description**| |---|---|---| |1|STANDBY#|Standbyinput(**Section 4.1 “Standby Function”**)| |2|GND|Power supply ground| |3|OUT|Oscillator output| |4|VDD|Positivepower supply| |Center Pad|NC|Tie to GND or do not connect.| DS20005529B-page 7  2017 Microchip Technology Inc. **DSC1001/3/4** ## **3.0 NOMINAL PERFORMANCE CHARACTERISTICS** **Note:** The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. **==> picture [163 x 346] intentionally omitted <==** **----- Start of picture text -----**
FIGURE 3-1: Supply Current.
2
146 Vdd-33av “°C 25°C
£
— 1 na
fos
& 100
Frequency {MHz}
FIGURE 3-2: Rise Time.
a
Vdd “ane 5
15 =1sy ~~ 4 “oe
2
21
05Lak)
0
Oo 5 100
Frequency (MHz)
FIGURE 3-3: Rise Time.
**----- End of picture text -----**
**==> picture [160 x 10] intentionally omitted <==** **----- Start of picture text -----**
FIGURE 3-4: Supply Current.
**----- End of picture text -----**
**==> picture [134 x 177] intentionally omitted <==** **----- Start of picture text -----**
FIGURE 3-5: Fall Time.
2
———-4FC
=1s | Vdd=2.8v
&
21F :
“05
0
0 50
Frequency
FIGURE 3-6: Fall Time.
**----- End of picture text -----**
DS20005529B-page 8  2017 Microchip Technology Inc. **DSC1001/3/4** ## **4.0 OUTPUT WAVEFORM** **==> picture [394 x 170] intentionally omitted <==** **----- Start of picture text -----**
tR tF
V
OH
OUTPUT
V
OL
1/fo tEN
tDA
VIH
STANDBY# VIL
**----- End of picture text -----**
_**FIGURE 4-1:** Output Waveform._ ## **4.1 Standby Function** |**4.1**
**Standby Function**|| |---|---| |**Standby# (Pin 1)**|**Output (Pin 3)**| |High Level|Output ON| |Open(no connect)|Output ON| |Low Level|High Impedance| DS20005529B-page 9  2017 Microchip Technology Inc. **DSC1001/3/4** ## **5.0 TEST CIRCUIT** **==> picture [424 x 275] intentionally omitted <==** **----- Start of picture text -----**
IDD
4 3
1 2
VDD 0.01μF 15pF
*VSD
*VSD = Standby# Logic Level Input
**----- End of picture text -----**
_**FIGURE 5-1:**_ _DSC1001/3/4 Test Circuit._ DS20005529B-page 10  2017 Microchip Technology Inc. **DSC1001/3/4** ## **6.0 BOARD LAYOUT (RECOMMENDED)** **==> picture [180 x 152] intentionally omitted <==** **----- Start of picture text -----**
Via to GND Layer
C1
VDD Output
Standby GND
Via to GND Layer
**----- End of picture text -----**
_**FIGURE 6-1:** Recommended Board Layout for DSC1001/3/4._ DS20005529B-page 11  2017 Microchip Technology Inc. **DSC1001/3/4** ## **7.0 SOLDER REFLOW PROFILE** **==> picture [310 x 159] intentionally omitted <==** **----- Start of picture text -----**
20-40
° Sec
260 C
217°C
60-150
200°C Sec
Re�ow
° 60-180
150 C
Sec
Pre heat Cool
25°C
8 min max Time
3C/Sec Max.
3C/Sec Max.
6C/Sec Max.
°C)
Temperature (
**----- End of picture text -----**
## _**FIGURE 7-1:** Solder Reflow Profile._ ||| |---|---| |**MSL 1 @ 260°C refer to JSTD-020C**|| |Ramp-UpRate(200°C to Peak Temp)|3°C/sec. max.| |Preheat Time 150°C to 200°C|60 to 180 sec.| |Time maintained above 217°C|60 to 150 sec.| |Peak Temperature|255°C to 260°C| |Time within 5°C of Actual Peak|20 to 40 sec.| |Ramp-Down Rate|6°C/sec. max.| |Time 25°C to Peak Temperature|8 minutes max.| DS20005529B-page 12  2017 Microchip Technology Inc. **DSC1001/3/4** ## **8.0 PACKAGING INFORMATION** ## **8.1 Package Marking Information** **==> picture [312 x 115] intentionally omitted <==** **----- Start of picture text -----**
4-Lead CDFN/DFN* Example
XXXXXX 0400000
DCPYYWW DCP1121
0SSS 0603
**----- End of picture text -----**
**==> picture [353 x 199] intentionally omitted <==** **----- Start of picture text -----**
Legend: XX...X Product code, customer-specific information, or frequency in MHz
without printed decimal point
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC [®] designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( ) e3
can be found on the outer packaging for this package.
●, ▲, ▼Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note : In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (⎯) symbol may not be to scale.
**----- End of picture text -----**
DS20005529B-page 13  2017 Microchip Technology Inc. **DSC1001/3/4** ## **4-Lead DFN 7.0 mm x 5.0 mm Package Outline & Recommended Land Pattern** Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DS20005529B-page 14  2017 Microchip Technology Inc. **DSC1001/3/4** ## **4-Lead CDFN 5.0 mm x 3.2 mm Package Outline & Recommended Land Pattern** DS20005529B-page 15  2017 Microchip Technology Inc. **DSC1001/3/4** ## **4-Lead CDFN 3.2 mm x 2.5 mm Package Outline & Recommended Land Pattern** DS20005529B-page 16  2017 Microchip Technology Inc. **DSC1001/3/4** ## **4-Lead CDFN 2.5 mm x 2.0 mm Package Outline & Recommended Land Pattern** DS20005529B-page 17  2017 Microchip Technology Inc. **DSC1001/3/4** ## **NOTES:** DS20005529B-page 18  2017 Microchip Technology Inc. **DSC1001/3/4** ## **APPENDIX A: REVISION HISTORY** ## **Revision A (September 2017)** - Converted Micrel data sheet DSC1001 to Microchip format data sheet DS20005529A. - Minor text changes throughout. - Added Table 2-2 for DFN package. - Combined Micrel data sheet DSC1003 and DSC1004 into this data sheet. - Updated **Section 1.0 “Electrical Characteristics”** to reflect this change. - Updated General Description and Features to reflect this change. ## **Revision B (November 2017)** - Updated VOH and VOL values in Table 1-1. DS20005529B-page 19  2017 Microchip Technology Inc. **DSC1001/3/4** ## **NOTES:** DS20005529B-page 20  2017 Microchip Technology Inc. **DSC1001/3/4** ## **PRODUCT IDENTIFICATION SYSTEM** To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. |**PART NO.**|**PART NO.**|**X**|**X**||**X**|**X**|**X**|**X**|**-X**
**X**
**X.XXXX**|**-X**
**X**
**X.XXXX**|**-X**
**X**
**X.XXXX**|**-X**
**X**
**X.XXXX**|**-X**
**X**
**X.XXXX**|**X**|**X**||**Examples:**|**Examples:**|**Examples:**|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Device**||**Package**||**Temperature**|||**Stability**|||**Frequency**||||**Package**|||a)|DSC1001AE1-010.0000T:
1.8V - 3.3V Low-Power Pre-||| ||||||**Range**||||||||||||||cision CMOS Oscillator,|4-| ||||||||||||||||||||Lead 7.0 mm x 5.0 mm|| ||||||||||||||||||||DFN, Ext. Commercial Tem-|| |**Device:**||DSC1001/3/4: 1.8V - 3.3V Low-Power Precision
Oscillator||||||||||||CMOS|||||perature Range, ±50 ppm,
10 MHz Output Fre-|| ||||||||||||||||||||quency, 1,000/Reel|| |**Package:**||A
B||=
=|4-Lead 7.0
4-Lead 5.0||mm x
mm x||5.0 mm DFN
3.2 mm CDFN||||||||b)|DSC1003BL2-030.0000:
1.8V - 3.3V Low-Power Pre-||| |||C
D||=
=|4-Lead 3.2
4-Lead 2.5||mm x
mm x||2.5 mm CDFN
2.0 mm CDFN||||||||||cision CMOS Oscillator, 4-
Lead 5.0 mm x 3.2 mm|| ||||||||||||||||||||CDFN, Ext. Industrial Tem-|| |**Temperature**||E||=|–20C to +70C (Extended||||||||Commercial)||||||perature Range, ±25 ppm,|| |**Range:**||I||=|–40C to +85C (Industrial)||||||||||||||30 MHz
Output
Fre-|| |||L||=|–40C to +105C||||(Extended Industrial)||||||||||quency, 110/Tube|| |**Stability:**||1||=|±50ppm||||||||||||c)|DSC1001DE5-150.0000:
1.8V - 3.3V Low-Power Pre-||| |||2||=|±25ppm||||||||||||||cision CMOS Oscillator, 4-|| |||3||=|±20 ppm||||||||||||||Lead 2.5 mm x 2.0 mm|| |||5||=|±10 ppm||||||||||||||CDFN, Ext. Commercial|| ||||||||||||||||||||Temperature
Range,|| |**Frequency:**||xxx.xxxx|||=1 MHz to 150 MHz (user-defined)||||||||||||||±10 ppm,150 MHz Output|| ||||||||||||||||||||Frequency, 110/Tube|| |**Packing Option:**||=
T
=|||110/Tube
1,000/Reel||||||||||||d)|DSC1004AI3-075.0000T:
1.8V - 3.3V Low-Power||| ||||||||||||||||||||Precision CMOS Oscilla-|| ||||||||||||||||||||tor, 4-Lead 7.0 mm x|| ||||||||||||||||||||5.0 mm DFN, Industrial|| ||||||||||||||||||||Temperature Range,|| ||||||||||||||||||||±20 ppm,75 MHz
Output Frequency,|| ||||||||||||||||||||1,000/Reel|| ||||||||||||||||||**Note **|**1:**|Tape and Reel identifier only appears in the|| ||||||||||||||||||||catalog part number description. This|| ||||||||||||||||||||identifier is used for ordering purposes and|| ||||||||||||||||||||is not printed on the device package. Check|| ||||||||||||||||||||with your Microchip Sales Office for package|| ||||||||||||||||||||availability with the Tape and Reel option.|| DS20005529B-page 21  2017 Microchip Technology Inc. **DSC1001/3/4** ## **NOTES:** DS20005529B-page 22  2017 Microchip Technology Inc. ## **Note the following details of the code protection feature on Microchip devices:** - Microchip products meet the specification contained in their particular Microchip Data Sheet. - Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. - There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. - Microchip is willing to work with the customer who is concerned about the integrity of their code. - Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. _Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ ## **QUALITY MANAGEMENT SYSTEM** ## **CERTIFIED BY DNV** ## **Trademarks** The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. - SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. - © 2017, Microchip Technology Incorporated, All Rights Reserved. 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