# Small Signal Schottky Diode, Single, 45 V, 10 A, 530 mV, 110 A, 150 °C

![Product image](https://novapart.co/image/farnell:1572473/)

**URL**: https://novapart.co/products/DSB10I45PM/small-signal-schottky-diode-single-45-v-10-a-530
**SKU**: DSB10I45PM
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Small Signal Schottky Diodes
**Price**: €0.7520
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Product Range | DSB10 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220FPAB |
| Diode Configuration | Single |
| Forward Voltage Max | 530mV |
| Forward Surge Current | 110A |
| Average Forward Current | 10A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1572473/)

**DSB 10 I 45PM** 

advanced 

## **Schottky** 

High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode 

**VRRM = 45 V IFAV = 10 A VF = 0.53 V** 

**Part number** _(Marking on product)_ 

DSB 10 I 45PM 

**==> picture [75 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 1<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- Very low Vf 

- Extremely low switching losses 

- Low Irm-values 

- Improved thermal behaviour 

- High reliability circuit operation 

- Low voltage peaks for reduced protection circuits 

## **Applications:** 

- Rectifiers in switch mode power supplies (SMPS) 

- Free wheeling diode in low voltage converters 

## **Package:** 

## TO-220FPAB 

   - Industry standard outline 

   - Plastic overmolded tab for electrical isolation 

   - Epoxy meets UL 94V-0 

   - RoHS compliant 

- Low noise switching 

- Low losses 

## **R a t i n g s** 

|**Symbol**<br>**Conditions**||||**Unit**|
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|VRRM<br>_max. repetitive reverse voltage_<br>TVJ<br>°C<br>=<br>25|~~ee~~|~~ee~~|45|V|
|IR<br>VR =<br>TVJ<br>V<br>°C<br>=<br>TVJ<br>°C<br>=<br>VR =<br>45<br>V<br>45<br>25<br>_reverse current_<br>100|~~ee~~|~~ee~~|6<br>30|mA<br>mA|
|VF<br>TVJ =<br>°C<br>IF =<br>A<br>10<br>_forward voltage_<br>125<br>IF =<br>A<br>20<br>TVJ =<br>°C<br>25<br>IF =<br>A<br>10<br>IF =<br>A<br>20|~~ee|~~|~~ee|~~|0.58<br>0.53<br>0.81<br>0.77|V<br>V<br>V<br>V|
|IFAV<br>TC = 115 °C<br>_average forward current_<br>rectangular, d = 0.5|~~|~~|~~|~~|10|A|
|VF0<br>TVJ = 150 °C<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_<br>~~)~~|~~7~~|~~7~~|0.31<br>22|V<br>Ω<br>m|
|RthJC<br>_thermal resistance junction to case_<br>~~)~~|~~7~~|~~7~~|4.50|K/W|
|TVJ<br>_virtual junction temperature_|-55||150|°C|
|Ptot<br>TC<br>°C<br>=<br>25<br>_total power dissipation_|||30|W|
|IFSM<br>ms (50 Hz), sine<br>TVJ =<br>45 °C<br>tp = 10<br>_max. forward surge current_|||110|A|
|CJ<br>_junction capacitance_<br>VR =<br>V; f = 1 MHz<br>TVJ =<br>°C<br>25||||pF|
|EAS<br>TVJ<br>°C<br>=<br>IAS=<br>A;<br>L =<br>µH<br>100<br>25<br>_non-repetitive avalanche energy_|||tbd|mJ|
|IAR<br>VA =<br>f = 10 kHz<br>1.5·VR typ.;<br>_repetitive avalanche current_|||tbd|A|



IXYS reserves the right to change limits, conditions and dimensi 

Data according to IEC 60747and per diode unless otherwise specified 

© 2005 IXYS all rights reserved 

**DSB 10 I 45PM** 

advanced 

|advanced|advanced|advanced|advanced|advanced|
|---|---|---|---|---|
|**ymbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**|||||
|MS<br>per pin*<br>_RMS current_|||35|A|
|thCH<br>_thermal resistance case to heatsink_||0.50||K/W|
|D<br>_mounting torque_<br> C<br>_mounting force with clip_|0.4<br>20||0.6<br>60|Nm<br>N|
|stg<br>_storage temperature_|-55||150|°C|
|eight||2||g|



* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. 

In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. 

## Outlines TO-220FPAB 

**==> picture [509 x 313] intentionally omitted <==**

IXYS reserves the right to change limits, conditions and dimensi 

Data according to IEC 60747and per diode unless otherwise specified 

© 2005 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DSB10I45PM/small-signal-schottky-diode-single-45-v-10-a-530)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/dsb10i45pm/diode-schottky-10a-45v-to220fpab/dp/1572473)
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