# Small Signal Schottky Diode, Dual Common Cathode, 200 V, 45 A, 860 mV, 450 A, 175 °C

![Product image](https://novapart.co/image/farnell:1572508/)

**URL**: https://novapart.co/products/DSA90C200HB/small-signal-schottky-diode-dual-common-cathode
**SKU**: DSA90C200HB
**Manufacturer**: IXYS SEMICONDUCTOR
**Price**: €2.8400
**Stock**: 200+
**Lead Time**: 141 days (indicative)

## Description

Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):45A; Forward Voltage VF Max:860mV; Forward Surge Current Ifsm Max:450A; Operating Tempe

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Product Range | DSA90 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247AD |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 860mV |
| Forward Surge Current | 450A |
| Reverse Recovery Time | - |
| Average Forward Current | 45A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1572508/)

**DSA90C200HB** 

## **Schottky Diode Gen ²** 

|V|RRM|=||200|V|
|---|---|---|---|---|---|
|FAV<br>I||=|2x|45|A|
|V|F|=||0.86|V|



## High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode 

## **Part number** 

## DSA90C200HB 

Backside: cathode 

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## **Features / Advantages:** 

- Very low Vf 

- Extremely low switching losses 

- Low Irm values 

- Improved thermal behaviour 

## **Applications:** 

- Rectifiers in switch mode power supplies (SMPS) 

- Free wheeling diode in low voltage converters 

## **Package:** TO-247 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- High reliability circuit operation 

- Low voltage peaks for reduced protection circuits 

- Low noise switching 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131031d 

© 2013 IXYS all rights reserved 

**DSA90C200HB** 

|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Schottky**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Schottky**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Schottky**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Schottky**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Schottky**|Symbol<br>Definition<br>Ratings<br>typ.<br>max.<br>min.<br>Conditions<br>Unit<br>**Schottky**|
|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions||||||
|VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||200|V|
|VRRM<br>_max. repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||200|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>V    =          V<br>R<br>200<br>125<br>200|||900<br>5|mA<br>µA|
|V F<br>_forward voltage drop_|T    =   25°C<br>VJ<br>I  =          A<br>F<br>45<br>I  =          A<br>F<br>90|||0.96<br>1.18|V<br>V|
||T    =       °C<br>VJ<br>I  =          A<br>F<br>45<br>I  =          A<br>F<br>90<br>125|||0.86<br>1.14|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>145<br>T    =       °C<br>VJ<br>175<br>d =<br>rectangular<br>0.5|||45|A|
|VF0<br>T    =       °C<br>VJ<br>175<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.52<br>6.5|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC||||0.55|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH|||0.25||K/W|
|Ptot<br>T    =   25°C<br>C<br>_total power dissipation_||||275|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>T    =   45°C<br>VJ<br>_max. forward surge current_<br>V  = 0 V<br>R||||820|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>24<br>T    =   25°C<br>f = 1 MHz<br>R<br>VJ|||261||pF|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131031d 

© 2013 IXYS all rights reserved 

**DSA90C200HB** 

|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal<br>1)|||70|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||6||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2||
||20||||



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Product Marking<br>Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- D = Diode S = Schottky Diode A = low VF 

- 90 = Current Rating [A] C = Common Cathode 

- 200 = Reverse Voltage [V] HB = TO-247AD (3) 

|Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|
|Standard|DSA90C200HB<br>|DSA90C200HB|Tube|30|502854|



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131031d 

© 2013 IXYS all rights reserved 

**DSA90C200HB** 

**==> picture [509 x 15] intentionally omitted <==**

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 Outlines TO-247<br>**----- End of picture text -----**<br>


|||||||||||||||E|E|E||||||||||||A|A|A|A2||Ø|Ø|P|P||||ØP1|ØP1|ØP1|D2|D2||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||
|Q||||||||||||||||||||||||||||||||S|||||||||||||**Sym.**|**Inches**<br>**min.**<br>**max.**||**Millimeter**<br>**min.**<br>**max.**||
||||||||||||||||||||||||||||||||||||||||||||||A|0.185|0.209|4.70|5.30|
||||||||||||||||||||||||||||||||||||||||||||D1||A1|0.087|0.102|2.21|2.59|
||||||||||||||||||||||||||D||||||||||||||||||||A2|0.059|0.098|1.50|2.49|
|2xE2|||||||||||||||||||||||||||||||||||||||||||||D<br>E|0.819<br>0.610|0.845<br>0.640|20.79<br>15.48|21.45<br>16.24|
|||||||||||||||||||||||||||||||||||||||||**4**|||||E2|0.170|0.216|4.31|5.48|
||||||||**1**||||||**2**|||||**3**|||||||||||||||||||||||||||e<br>L|0.215<br>0.780|BSC<br>0.800|5.46<br>19.80|BSC<br>20.30|
||||||||||||||||||||||||||||||||||||||||||||||L1|-|0.177|-|4.49|
||L1||||||||||||||||||||||||||||||||||||E1||||||||Ø P|0.140|0.144|3.55|3.65|
||||||||||||||||||||||||||||||||||||||||||||||Q|0.212|0.244|5.38|6.19|
||||||||||||||||||||||||||||||||||||||||||||||S|0.242|BSC|6.14|BSC|
||||||||||||||||||||||||||L||||||||||||||||||||b|0.039|0.055|0.99|1.40|
||||||||||||||||||||||||||||||||||||||||||||||b2|0.065|0.094|1.65|2.39|
||||||||||||||||||||||||||||||||||||||||||||||b4|0.102|0.135|2.59|3.43|
||2xb2|||||||||b4|||||||||||||||3xb||C|||A1|||||||||||||||c<br>D1<br>D2<br>E1|0.015<br>0.515<br>0.020<br>0.530|0.035<br>-<br>0.053<br>-|0.38<br>13.07<br>0.51<br>13.45|0.89<br>-<br>1.35<br>-|
|||||||||||2x||e|||||||||||||||||||||||||||||||||Ø P1|-|0.29|-|7.39|
|||||||||||||||||||||||||||||||||||||||||||||||||||



**==> picture [483 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131031d 

© 2013 IXYS all rights reserved 

**DSA90C200HB** 

## **Schottky** 

**==> picture [509 x 660] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 10.000 1000<br>T VJ = 175°C<br>150°C<br>1.000<br>125°C<br>IF IR CT<br>10 0.100 100°C TVJ= 25°C<br>[A] [mA] [pF]<br>T VJ = 75°C<br>150°C<br>125°C 0.010<br>25°C 50°C<br>100<br>25°C<br>1 0.001 70<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 40 80 120 160 200 0 50 100 150 200<br>VF [V] VR [V] VR [[V]]<br>Fig. 1 Max. forward voltage Fig. 2 Typ. reverse current Fig. 3 Typ. junction capacitance<br>drop characteristics IR vs. rev: voltage VR CT vs. reverse voltage VR<br>100 100<br>80 80<br>DC<br>d = 0.5<br>60 P 60<br>(AV)<br>I d =<br>F(AV)<br>[W] DC<br>40 40 0.5<br>[A] 0.33<br>0.25<br>20 20 0.17<br>0.08<br>0 0<br>0 40 80 120 160 0 10 20 30 40 50 60 70 80 90<br>TC [°C] IF(AV) [A]<br>Fig. 4 Avg. forward current Fig. 5 Forward power loss<br>IF(AV) vs. case temp. TC characteristics<br>1<br>Z D = 0.5<br>thJC<br>0.33<br>[K/W] 0.25<br>0.17<br>0.08<br>0.1<br>Single Pulse<br>0.001 0.01 0.1 1<br>t [s]<br>Fig. 6 Transient thermal impedance junction to case at various duty cycles<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131031d 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DSA90C200HB/small-signal-schottky-diode-dual-common-cathode)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/dsa90c200hb/diode-schottky-to-247ad/dp/1572508)
---

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