# Fast / Ultrafast Diode, Epitaxial Diode (FRED), 200 V, 30 A, Dual Common Cathode, 1.06 V, 35 ns

![Product image](https://novapart.co/image/farnell:1572527/)

**URL**: https://novapart.co/products/DPG60C200QB/fast-ultrafast-diode-epitaxial-fred-200-v-30-a
**SKU**: DPG60C200QB
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €4.5800
**Stock**: 10+
**Lead Time**: 274 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.06V; Reverse Recovery Time trr Max:35ns; Forward Surge Current I

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3 Pin |
| Product Range | DPG60 |
| Qualification | - |
| Diode Case Style | TO-3P |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.06V |
| Forward Surge Current | 300A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1572527/)

**DPG60C200QB** 

## **HiPerFRED²** 

|RRM<br>V|=||200|V|
|---|---|---|---|---|
|FAV<br>I|=|2x|30|A|
|rrt|=||35|ns|



High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 

## **Part number** 

DPG60C200QB 

Backside: cathode 

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1 2 3<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-3P 

   - Industry standard outline compatible with TO-247 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126b 

© 2013 IXYS all rights reserved 

**DPG60C200QB** 

|**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|
|---|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|||||||
|VRSM<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||200|V|
|VRRM<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||200|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>200<br>200|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||1<br>0.1|mA<br>µA|
|V F<br>_forward voltage drop_|I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|T    =   25°C<br>VJ|||1.34<br>1.63|V<br>V|
||I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|T    =       °C<br>VJ<br>150|||1.06<br>1.39|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>140<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||30|A|
|VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.70<br>10.5|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC|||||0.95|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH||||0.25||K/W|
|Ptot<br>_total power dissipation_||T    =   25°C<br>C|||160|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||360|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>150<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||42||pF|
|_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>30<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>130||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3<br>7||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>55||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126b 

© 2013 IXYS all rights reserved 

**DPG60C200QB** 

|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal<br>1)|||50|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||5||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2||
||20||||



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Product Marking<br>Logo IXYS<br>Part No.<br>Assembly Line Zyyww<br>Assembly Code abcd<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- D = Diode P = HiPerFRED G = extreme fast 60 = Current Rating [A] C = Common Cathode 

- 200 = Reverse Voltage [V] QB = TO-3P (3) 

|Ordering|Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|---|
|Standard|DPG60C200QB|DPG60C200QB||Tube|30|502213|
||DPF60C200HB<br>DPF60C200HJ<br>Similar Part<br>DPG60C200HB||||||
|||Package|Voltage class||||
|||TO-247AD(3)|200||||
|||TO-247AD(3)|200||||
|||ISOPLUS247(3)|200||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126b 

© 2013 IXYS all rights reserved 

**DPG60C200QB** 

**==> picture [83 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
 Outlines TO-3P<br>**----- End of picture text -----**<br>


**==> picture [130 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 3<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126b 

© 2013 IXYS all rights reserved 

**DPG60C200QB** 

## **Fast Diode** 

**==> picture [508 x 660] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 16<br>70 0.4 14<br>IF = 60 A<br>60 IF = 60 A 30 A<br>12<br>30 A 15 A<br>50 15 A<br>IF 40 TVJ = 150°C Qrr 0.3 IRM 10<br>[A] 8<br>30 [μC] [A]<br>0.2 6<br>20<br>25°C TVJ = 125°C 4 TVJ = 125°C<br>10 VR  = 130 V VR  = 130 V<br>0.1 2<br>0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600<br>VF [V] -diF [/dt] [[A/μs]] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 70 600 12<br>TVJ = 125°C tfr VFR<br>1.2 V R  = 130 V 500 10<br>60<br>1.0 400 8<br>trr tfr VFR<br>Kf 0.8 [ns] 50 IF = 60 A30 A [ns] 300 6 [V]<br>0.6 15 A 200 4<br>IRM<br>40<br>TVJ = 125°C<br>0.4 100 VR  = 130 V 2<br>0.2 Qrr 30 0 IF    =   30 A 0<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TVJ °[C] -diF [/dt] [[A/μs]] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recov. voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>14 1.0<br>TVJ = 125°C<br>12 V R = 130 V<br>0.8<br>10<br>IF = 15 A<br>Erec 8 30 A 0.6<br>60 A<br>ZthJC<br>6<br>[μJ] 0.4<br>4 [K/W] R thi [K/W] t i [s]<br>0.1311 0.0018<br>0.2 0.1377 0.002<br>2 0.3468 0.012<br>0.2394 0.07<br>0.095 0.345<br>0.0<br>0 200 400 600 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7  Typ. recovery energy Fig. 8 Transient thermal impedance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126b 

© 2013 IXYS all rights reserved 



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- [View this product on Novapart](https://novapart.co/products/DPG60C200QB/fast-ultrafast-diode-epitaxial-fred-200-v-30-a)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/dpg60c200qb/diode-fast-to-3p/dp/1572527)
---

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