# Fast / Ultrafast Diode, Epitaxial Diode (FRED), 400 V, 15 A, Dual Common Cathode, 1.08 V, 45 ns

![Product image](https://novapart.co/image/farnell:1572547/)

**URL**: https://novapart.co/products/DPG30C400PB/fast-ultrafast-diode-epitaxial-fred-400-v-15-a
**SKU**: DPG30C400PB
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €2.0500
**Stock**: 10+
**Lead Time**: 274 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):15A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.08V; Reverse Recovery Time trr Max:45ns; Forward Surge Curren

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3 Pin |
| Product Range | DPG30 |
| Qualification | - |
| Diode Case Style | TO-220 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.08V |
| Forward Surge Current | 150A |
| Reverse Recovery Time | 45ns |
| Average Forward Current | 15A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1572547/)

## **DPG30C400PB** 

## **HiPerFRED²** 

VRRM = 400 V I FAV = 2x 15 A[t] rr = 45 ns 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 

## **Part number** 

DPG30C400PB 

Backside: cathode 

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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-220 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG30C400PB** 

|**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|
|---|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|||||||
|VRSM<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||400|V|
|VRRM<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||400|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>400<br>400|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||1<br>0.18|mA<br>µA|
|V F<br>_forward voltage drop_|I  =          A<br>F<br>15<br>I  =          A<br>F<br>30|T    =   25°C<br>VJ|||1.39<br>1.63|V<br>V|
||I  =          A<br>F<br>15<br>I  =          A<br>F<br>30|T    =       °C<br>VJ<br>150|||1.14<br>1.40|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>140<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||15|A|
|VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.84<br>16.5|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC|||||1.7|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W|
|Ptot<br>_total power dissipation_||T    =   25°C<br>C|||90|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||190|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>200<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||16||pF|
|_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>270||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||4<br>5.5||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||45<br>70||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG30C400PB** 

|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal<br>1)|||35|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||2||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6||
||20||||



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Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- D = Diode P = HiPerFRED G = extreme fast 30 = Current Rating [A] C = Common Cathode 

- 400 = Reverse Voltage [V] PB = TO-220AB (3) 

|Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|---|---|
|Standard||DPG30C400PB|DPG30C400PB||Tube|50|507157|
|||||||||
|||Similar Part|Package|Voltage class||||
|||DPG30C400HB|TO-247AD(3)|400||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG30C400PB** 

## **Outlines TO-220** 

||||||||||||||||||||||||Dim.|Millimeter|Millimeter|Inches|Inches||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||A|||||Min.|Max.|Min.|Max.||
||||||||||||||||||||||||||||||
||||||E|||||||||Q||||A1|||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055||
||||||||||||||||||||||||A2|2.29|2.79|0.090|0.110||
|ØP||||||||||||4||||H1|||||||b<br>b2|0.64<br>1.15|1.01<br>1.65|0.025<br>0.045|0.040<br>0.065||
||||||||||||||||D||||||||C|0.35|0.56|0.014|0.022||
||||||||||||||||||||||||D|14.73|16.00|0.580|0.630||
|||1||||2|||3||||||||||||||E|9.91|10.66|0.390|0.420||
|3x b2|||||||||||||L1||||||||||e<br>H1|2.54<br>5.85|BSC<br>6.85|0.100<br>0.230|BSC<br>0.270||
||||||||||||||||L||||||||L|12.70|13.97|0.500|0.550||
||||||||||||||||||||||||L1|2.79|5.84|0.110|0.230||
||||||||||||||||||||||||ØP|3.54|4.08|0.139|0.161||
|3x b||||||||||||2x e|||||C<br>A2||||||Q|2.54|3.18|0.100|0.125||
||||||||||||||||||||||||||||||



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG30C400PB** 

## **Fast Diode** 

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**----- Start of picture text -----**<br>
80 0.4 12<br>70 TVJ = 125°C 30 A<br>60 0.3 VR = 270 V 15 A 10 IIFF = 30 A = 15 A<br>I F = 7.5 A<br>50<br>IF Qrr 7.5 A IRM 8<br>40 0.2<br>[A]<br>[μC] [A] 6<br>30 T VJ  =  25°C<br>150°C<br>20 0.1<br>4<br>10 TVJ = 125°C<br>VR = 270 V<br>0 0.0 2<br>0.0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 120 18 450<br>TVJ = 125°C<br>1.2 T VJ = 125°C 16  IF = 15 A 400<br>100 V R = 270 V 14 V R  = 270 V 350<br>1.0<br>12 300<br>0.8 trr 80 VFR 10 250<br>Kf 0.6 IRM [ns] 60 I F = 30 A [V] 8 200[ns]tfr<br>6 150<br>0.4 VFR<br>15 A<br>4 100<br>0.2 Qrr 40 7.5 A tfr<br>2 50<br>0.0 20 0 0<br>0 40 80 120 160 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>25 2.0<br>TVJ = 125°C<br>VR = 270 V<br>20 1.6<br>Erec 15 IF = 30 A 1.2<br>IF = 15 A ZthJC<br>[μJ] I F = 7.5 A<br>10 [K/W] 0.8<br>5 0.4<br>0 0.0<br>0 100 200 300 400 500 600 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 



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- [View this product on Novapart](https://novapart.co/products/DPG30C400PB/fast-ultrafast-diode-epitaxial-fred-400-v-15-a)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/dpg30c400pb/diode-fast-to-220ab/dp/1572547)
---

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