# Fast / Ultrafast Diode, 400 V, 10 A, Dual Common Cathode, 1.4 V, 45 ns, 100 A

![Product image](https://novapart.co/image/farnell:1427231/)

**URL**: https://novapart.co/products/DPG20C400PB/fast-ultrafast-diode-400-v-10-a-dual-common
**SKU**: DPG20C400PB
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.5800
**Stock**: 10+
**Lead Time**: 260 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):10A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.4V; Reverse Recovery Time trr Max:45ns; Forward Surge Cu

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3 Pin |
| Product Range | DPG20 |
| Qualification | - |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.4V |
| Forward Surge Current | 100A |
| Reverse Recovery Time | 45ns |
| Average Forward Current | 10A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1427231/)

## **DPG20C400PB** 

## **HiPerFRED²** 

VRRM = 400 V I FAV = 2x 10 A[t] rr = 45 ns 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 

## **Part number** 

DPG20C400PB 

Backside: cathode 

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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-220 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG20C400PB** 

|**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|
|---|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|||||||
|VRSM<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||400|V|
|VRRM<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||400|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>400<br>400|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||1<br>0.15|mA<br>µA|
|V F<br>_forward voltage drop_|I  =          A<br>F<br>10<br>I  =          A<br>F<br>20|T    =   25°C<br>VJ|||1.32<br>1.51|V<br>V|
||I  =          A<br>F<br>10<br>I  =          A<br>F<br>20|T    =       °C<br>VJ<br>150|||1.03<br>1.24|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>150<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||10|A|
|VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.77<br>19.8|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC|||||2.3|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W|
|Ptot<br>_total power dissipation_||T    =   25°C<br>C|||65|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||150|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>200<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||12||pF|
|_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>10<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>270||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||4<br>6||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||45<br>65||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG20C400PB** 

|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal<br>1)|||35|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||2||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6||
||20||||



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Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- D = Diode P = HiPerFRED G = extreme fast 20 = Current Rating [A] C = Common Cathode 

- 400 = Reverse Voltage [V] PB = TO-220AB (3) 

|Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|---|---|
|Standard||DPG20C400PB|DPG20C400PB||Tube|50|506647|
|||||||||
|||Similar Part|Package|Voltage class||||
|||DPG20C400PN|TO-220ABFP(3)|400||||
|||DPG20C400PC|TO-263AB(D2Pak) (2)|400||||



**Equivalent Circuits for Simulation** _* on die level_ T    =VJ 175 °C I V0 ~~R~~ 0 Fast Diode V 0 max _threshold voltage_ 0.77 V R0 max _slope resistance *_ 16.6 mΩ 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG20C400PB** 

## **Outlines TO-220** 

||||||||||||||||||||||||Dim.|Millimeter|Millimeter|Inches|Inches||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||A|||||Min.|Max.|Min.|Max.||
||||||||||||||||||||||||||||||
||||||E|||||||||Q||||A1|||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055||
||||||||||||||||||||||||A2|2.29|2.79|0.090|0.110||
|ØP||||||||||||4||||H1|||||||b<br>b2|0.64<br>1.15|1.01<br>1.65|0.025<br>0.045|0.040<br>0.065||
||||||||||||||||D||||||||C|0.35|0.56|0.014|0.022||
||||||||||||||||||||||||D|14.73|16.00|0.580|0.630||
|||1||||2|||3||||||||||||||E|9.91|10.66|0.390|0.420||
|3x b2|||||||||||||L1||||||||||e<br>H1|2.54<br>5.85|BSC<br>6.85|0.100<br>0.230|BSC<br>0.270||
||||||||||||||||L||||||||L|12.70|13.97|0.500|0.550||
||||||||||||||||||||||||L1|2.79|5.84|0.110|0.230||
||||||||||||||||||||||||ØP|3.54|4.08|0.139|0.161||
|3x b||||||||||||2x e|||||C<br>A2||||||Q|2.54|3.18|0.100|0.125||
||||||||||||||||||||||||||||||



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 

**DPG20C400PB** 

## **Fast Diode** 

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30 0.4 12<br>TVJ = 125°C 20 A TVJ = 125°C 20 A<br>25 VR = 270 V VR = 270 V 10 A<br>10<br>5 A<br>20 0.3<br>10 A<br>IF 15 Qrr IRM 8<br>[A] TVJ = 125°C [μC] 5 A [A] 6<br>10 0.2<br>TVJ = 25°C 4<br>5<br>0 0.1 2<br>0.0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 0 100 200 300 400 500<br>VF [V] -diF /dt [A/μs] -diF/dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 100 14 350<br>1.2 I F  = 20 A TVVJR  = 125°C= 270 V 12  I TFVJ = 125°C = 10 A 300<br>VR = 270 V<br>80<br>1.0 10 A 10 250<br>0.8 trr 5 A VFR8 200<br>Kf 60 [V] tfr<br>0.6 IRM [ns] 6 VFR 150[ns]<br>0.4 4 100<br>40<br>0.2 Qrr 2 tfr 50<br>0.0 20 0 0<br>0 40 80 120 160 0 100 200 300 400 500 0 100 200 300 400 500<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recovery voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>25 3<br>TVJ = 125°C<br>VR = 270 V<br>20<br>2<br>Erec15 IF = 5 A ZthJC<br>10 A [K/W]<br>10 20 A<br>[μJ] 1<br>5<br>0 0<br>0 100 200 300 400 500 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131101a 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DPG20C400PB/fast-ultrafast-diode-400-v-10-a-dual-common)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/dpg20c400pb/diode-fast-20a-to-220ab/dp/1427231)
---

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