# Fast / Ultrafast Diode, High Performance, 200 V, 15 A, Single, 1.25 V, 35 ns, 150 A

![Product image](https://novapart.co/image/farnell:1427229/)

**URL**: https://novapart.co/products/DPG15I200PA/fast-ultrafast-diode-high-performance-200-v-15-a
**SKU**: DPG15I200PA
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.1900
**Stock**: 25+
**Lead Time**: 260 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):15A; Diode Configuration:Single; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm M

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 2 Pin |
| Product Range | DPG15 |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 150A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 15A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1427229/)

## **DPG15I200PA** 

## **HiPerFRED²** 

VRRM = 200 V I FAV = 15 A[t] rr = 35 ns 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 

## **Part number** 

DPG15I200PA 

Backside: cathode 

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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-220 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG15I200PA** 

|**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|
|---|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|||||||
|VRSM<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||200|V|
|VRRM<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||200|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>200<br>200|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||1<br>0.08|mA<br>µA|
|V F<br>_forward voltage drop_|I  =          A<br>F<br>15<br>I  =          A<br>F<br>30|T    =   25°C<br>VJ|||1.26<br>1.51|V<br>V|
||I  =          A<br>F<br>15<br>I  =          A<br>F<br>30|T    =       °C<br>VJ<br>150|||1.01<br>1.29|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>145<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||15|A|
|VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.69<br>18|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC|||||1.7|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W|
|Ptot<br>_total power dissipation_||T    =   25°C<br>C|||90|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||240|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>150<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||20||pF|
|_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>130||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3<br>6.5||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>55||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG15I200PA** 

|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal|||35|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||2||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6||
||20||||



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Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- D = Diode P = HiPerFRED G = extreme fast 15 = Current Rating [A] I = Single Diode 

- 200 = Reverse Voltage [V] PA = TO-220AC (2) 

|Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|
|Standard|DPG15I200PA|DPG15I200PA|Tube|50|506661|



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG15I200PA** 

## **Outlines TO-220** 

||||||||||||||||A|A|||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||E|||||Q||||A1|||||Dim.|Millimeter||Inches|||
|||||||||||||||||||||Min.|Max.|Min.|Max.||
|ØP|||||||||4|||H1|||||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055||
||||||||||||||||||||A2|2.29|2.79|0.090|0.110||
||||||||||||||||||||||||||
||||||||||||D||||||||b|0.64|1.01|0.025|0.040||
||||||||||||||||||||b2|1.15|1.65|0.045|0.065||
||||||||||||||||||||C|0.35|0.56|0.014|0.022||
|||1||||3|||||||||||||D|14.73|16.00|0.580|0.630||
|2x b2||||||||||L1|L||||||||E<br>e<br>H1|9.91<br>5.08<br>5.85|10.66<br>BSC<br>6.85|0.390<br>0.200<br>0.230|0.420<br>BSC<br>0.270||
||||||||||||||||||||L|12.70|13.97|0.500|0.550||
||||||||||||||||||||L1|2.79|5.84|0.110|0.230||
|2x b|||||e||||||||C<br>A2||||||ØP<br>Q|3.54<br>2.54|4.08<br>3.18|0.139<br>0.100|0.161<br>0.125||
||||||||||||||||||||||||||



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG15I200PA** 

## **Fast Diode** 

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**----- Start of picture text -----**<br>
80 0.5 16<br>TVJ = 125°C<br>70 0.4 VR = 130 V 30 A 14 II F F = 15 A= 30 A<br>60 12 I F = 7.5 A<br>15 A<br>50 TVJ =  25°C IRM 10<br>IF 40 150°C Qrr 0.3 7.5 A 8<br>[A]<br>[A]<br>[μC] 0.2<br>30 6<br>20 4<br>0.1<br>10 2 TVJ = 125°C<br>VR = 130 V<br>0 0.0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>VF  [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 70 16 400<br>TVJ = 125°C<br>1.2 60 VR = 130 V 14 TVJ = 125°C<br>1.0 12  I F = 15 A 300<br>IF = 30 A 10 VR = 130 V tfr<br>50<br>Kf 0.8 trr VFR 8 200<br>0.6<br>IRM [ns] 40 [V] 6 [ns]<br>15 A<br>0.4<br>7.5 A 4 100<br>0.2 Qrr 30 2 VFR tfr<br>0.0 20 0 0<br>0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. recov. time Fig. 6 Typ. peak forward voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>16 1.8<br>14<br>1.6<br>12<br>IF = 30 A 1.4<br>Erec10 I IFF  = 15 A  = 7.5 A ZthJC1.2<br>8<br>[K/W]<br>[μJ] 6 1.0<br>4 0.8<br>2 TVJ = 125°C<br>VR = 130 V 0.6<br>0<br>0 100 200 300 400 500 600 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DPG15I200PA/fast-ultrafast-diode-high-performance-200-v-15-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/dpg15i200pa/diode-fast-15a-to-220ac/dp/1427229)
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