# Fast / Ultrafast Diode, Epitaxial Diode (FRED), 300 V, 10 A, Single, 980 mV, 35 ns, 100 A

![Product image](https://novapart.co/image/farnell:1572545/)

**URL**: https://novapart.co/products/DPG10I300PA/fast-ultrafast-diode-epitaxial-fred-300-v-10-a
**SKU**: DPG10I300PA
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.8590
**Stock**: 10+
**Lead Time**: 260 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):10A; Diode Configuration:Single; Forward Voltage VF Max:980mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:10

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 2 Pin |
| Product Range | DPG10 |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 980mV |
| Forward Surge Current | 100A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 10A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1572545/)

## **DPG10I300PA** 

## **HiPerFRED²** 

VRRM = 300 V I FAV = 10 A[t] rr = 35 ns 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 

## **Part number** 

DPG10I300PA 

Backside: cathode 

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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-220 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

## **DPG10I300PA** 

|**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|
|---|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|||||||
|VRSM<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||300|V|
|VRRM<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||300|V|
|IR<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>300<br>300|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||1<br>0.06|mA<br>µA|
|V F<br>_forward voltage drop_|I  =          A<br>F<br>10<br>I  =          A<br>F<br>20|T    =   25°C<br>VJ|||1.27<br>1.45|V<br>V|
||I  =          A<br>F<br>10<br>I  =          A<br>F<br>20|T    =       °C<br>VJ<br>150|||0.98<br>1.17|V<br>V|
|I<br>FAV<br>_average forward current_|T  =       °C<br>C<br>150<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||10|A|
|VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.74<br>17.7|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC|||||2.3|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W|
|Ptot<br>_total power dissipation_||T    =   25°C<br>C|||65|W|
|IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||140|A|
|CJ<br>_junction capacitance_<br>V  =         V<br>150<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||15||pF|
|_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>10<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>200||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3<br>5.5||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>45||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG10I300PA** 

|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal|||35|A|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Top<br>_operation temperature_|-55||150|°C|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||2||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6||
||20||||



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Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- D = Diode P = HiPerFRED G = extreme fast 10 = Current Rating [A] I = Single Diode 

- 300 = Reverse Voltage [V] PA = TO-220AC (2) 

|Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|---|---|
|Standard||DPG10I300PA|DPG10I300PA||Tube|50|506640|
|||||||||
|||Similar Part|Package|Voltage class||||
|||DPG10IM300UC|TO-252AA(DPak)|300||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG10I300PA** 

## **Outlines TO-220** 

||||||||||||||||A|A|||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||E|||||Q||||A1|||||Dim.|Millimeter||Inches|||
|||||||||||||||||||||Min.|Max.|Min.|Max.||
|ØP|||||||||4|||H1|||||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055||
||||||||||||||||||||A2|2.29|2.79|0.090|0.110||
||||||||||||||||||||||||||
||||||||||||D||||||||b|0.64|1.01|0.025|0.040||
||||||||||||||||||||b2|1.15|1.65|0.045|0.065||
||||||||||||||||||||C|0.35|0.56|0.014|0.022||
|||1||||3|||||||||||||D|14.73|16.00|0.580|0.630||
|2x b2||||||||||L1|L||||||||E<br>e<br>H1|9.91<br>5.08<br>5.85|10.66<br>BSC<br>6.85|0.390<br>0.200<br>0.230|0.420<br>BSC<br>0.270||
||||||||||||||||||||L|12.70|13.97|0.500|0.550||
||||||||||||||||||||L1|2.79|5.84|0.110|0.230||
|2x b|||||e||||||||C<br>A2||||||ØP<br>Q|3.54<br>2.54|4.08<br>3.18|0.139<br>0.100|0.161<br>0.125||
||||||||||||||||||||||||||



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 

**DPG10I300PA** 

## **Fast Diode** 

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**----- Start of picture text -----**<br>
30 0.3 12<br>TVJ = 125°C 20 A<br>25 VR = 200 V 10 TVJ = 125°C 20 A<br>TVJ = 25°C 10 A VR = 200 V 10 A<br>20 125°C 0.2 8<br>IF 15 150°C Qrr 5 A IRR 6 5 A<br>[μC] [A]<br>[A] 10 0.1 4<br>5 2<br>0 0.0 0<br>0.0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 0 100 200 300 400 500<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRR versus -diF /dt<br>1.4 80 12 600<br>TVJ = 125°C<br>1.2 V R = 200 V 10 500<br>1.0<br>60 8 400<br>Kf 0.80.6 IRR [ns]trr IF = 20 A V [V] FR 6 TV I FVJR  = 200 V= 10 A= 125°C [ns]300tfr<br>40 4 200<br>0.4<br>10 A<br>Qrr 2 100<br>0.2 5 A VFR tfr<br>0.0 20 0 0<br>0 40 80 120 160 0 100 200 300 400 500 0 100 200 300 400 500<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recov. voltage<br>Qrr, IRR versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>10 3<br>TVJ = 125°C<br>VR = 200 V<br>8<br>2<br>Erec 6 IF = 5 A10 A ZthJH<br>20 A<br>[K/W]<br>4<br>[μJ]<br>1<br>R thi [K/W] t i [s]<br>2 0.3866 0.0004<br>0.7062 0.0025<br>0.8127 0.022<br>0.3945 0.13<br>0 0<br>0 100 200 300 400 500 0.001 0.01 0.1 1 10<br>-diF /dt [A/μs] t [s]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131125a 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DPG10I300PA/fast-ultrafast-diode-epitaxial-fred-300-v-10-a)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/dpg10i300pa/diode-fast-to-220ac/dp/1572545)
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